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Delays in the construction of its U.S. based semiconductor fab may have just cost the Chairman of TSMC his job, but the Koreans aren't faring any better. BusinessKorea reports that Samsung Electronics has pushed the timeline for mass-production in its upcoming Austin Texas-based fab to 2025. Its construction was originally slated to be complete by now, with risk production and testing through early 2024, and mass production later in the year, which has all been pushed to 2025. The company now hopes to push its first wafer toward the end of 2024, with mass production expected some time in 2025.
Samsung reportedly blames issues with U.S. Government subsidies and regulatory problems behind the delays. A key aspect of getting cutting edge Asian foundries such as TSMC and Samsung to invest in the U.S. had to do with government subsidies to help these fabs overcome the uphill task of doing so Stateside and making the venture profitable. The U.S. had a sense of urgency in bringing these companies over, as it saw a potential conflict across the Taiwan straits, which threatened to disrupt practically the entire global digital economy. The company's first production line in this foundry was expected to be 4 nm EUV FinFET. It remains to be seen just how relevant and cutting edge 4 nm EUV is in 2025, as both TSMC and Intel hope to have Nanosheet transistors and nodes such as the TSMC N2 and Intel 20A taking shape by then.
View at TechPowerUp Main Site | Source
Samsung reportedly blames issues with U.S. Government subsidies and regulatory problems behind the delays. A key aspect of getting cutting edge Asian foundries such as TSMC and Samsung to invest in the U.S. had to do with government subsidies to help these fabs overcome the uphill task of doing so Stateside and making the venture profitable. The U.S. had a sense of urgency in bringing these companies over, as it saw a potential conflict across the Taiwan straits, which threatened to disrupt practically the entire global digital economy. The company's first production line in this foundry was expected to be 4 nm EUV FinFET. It remains to be seen just how relevant and cutting edge 4 nm EUV is in 2025, as both TSMC and Intel hope to have Nanosheet transistors and nodes such as the TSMC N2 and Intel 20A taking shape by then.
View at TechPowerUp Main Site | Source
