Here are some of the first motherboards by Intel's Desktop Board brand of consumer motherboards. Towards the end of 2011, Intel will release its Sandy Bridge-E high-end desktop platform. Like with the launch of any new chipset or desktop platform, Intel will have its Desktop Board products in place, that follow the chipset and branding specifications to the letter. With Sandy Bridge-E, Intel will launch two Extreme Series motherboards, the DX79SI and the DX79TO. In the second half of 2011, Intel will also launch a variety of Intel Atom boards, including one codenamed "Marshaltown".

Then in the first half of 2012, Intel will launch its next-generation 22 nm "Ivy Bridge" desktop processors in the LGA1155 package (compatible with Sandy Bridge). To back its launch, Intel will release a new chipset called Z77 Express. There will be no discrete graphics chipsets. H77 is the client desktop chipset that lacks overclocking features. Z77 has them, and support for Smart Response technology. Q77 adds a few enterprise management features. Intel's Z77 based motherboards include two Extreme series models, and two top-end Media Series models.

Last month, there reports of Intel pushing its Sandy Bridge-E enthusiast desktop platform to 2011. It was originally scheduled for 2011, but was reportedly delayed to 2012 because of issues Intel was facing with its flagship desktop chipset, codenamed Patsburg-D. Intel will be launching Sandy Bridge-E this year, but the first wave of motherboards will feature Patsburg-A/B chipsets, which have fewer SATA 6 Gb/s ports than Patsburg-D.

Intel put its launch plans on paper with its latest desktop platform roadmap, that shows the first three models of socket LGA2011 Sandy Bridge-E processors, the six-core Core i7-3960X, Core i7-3930K, and the quad-core Core i7-3820, featuring in the Q4 2011 column. The roadmap shows that the three processors will hold their market-positions till Q2-2012, when Intel will release faster models to displace them. The roadmap slide also shows that Ivy Bridge, Intel's next-generation socket LGA1155 processors that are built on the 22 nm fab process, will be released in March or April 2012, and not early 2012 as speculated earlier.

About a month ago, we were treated to the first pictures of G1.Sniper 2, Gigabyte's first LGA1155 motherboard in its G1.Killer series of motherboards targeting the gamer-overclocker market segment. High resolution pictures showed the prototype of having PCI-Express Gen. 2 slots like most other LGA1155 boards. It turns out, according to a photo-session of a production sample by tech-blog SIN's Hardware, that Gigabyte refined the design with the production version (the one that will be sold in the markets), it features PCI-Express 3.0 (Gen. 3) graphics slots.

For a LGA1155 motherboard to have Gen. 3 PEG slots, it requires Gen. 3 specifications compliant switching circuitry, which wasn't available to motherboard vendors when they were designing their first LGA1155 boards. With availability of those components, motherboard vendors are not wasting any time in rolling out new variants of their LGA1155 boards that feature Gen. 3 PCI-Express slots. Gigabyte placed "PCI-Express 3.0" marking on the board manually using stickers, going on to show that adding Gen. 3 slots indeed may have been a last-minute decision at Gigabyte. The other interesting marking on the G1.Sniper 2 carton is the mention of the board being ready for upcoming 22 nm "Ivy Bridge" Core processors. More pictures, and a preview at the source.

While Sandy Bridge-E LGA2011 processors will come with integrated PCI-Express 3.0 hubs, they're still a couple of quarter financial years away. Meanwhile, MSI jumped the gun on its latest socket LGA1155 Intel Z68-based motherboard with not only support for Intel's upcoming 22 nm Ivy Bridge LGA1155 processors, but also the PCI-Express 3.0 hubs that the new processors come with. While Ivy Bridge has PCI-E 3.0 hub, not just any LGA1155 motherboard can give you PCI-E 3.0 support. It requires slots that are compliant with the new specification, and needs PCI-E 3.0 compliant external switching chips. MSI has both, on its new Z68A-GD80 motherboard, and with it, the bragging rights of being the world's first PCI-E 3.0 compliant motherboard.

PCI-Express 3.0 gives you twice the interface bandwidth as PCI-Express 2.0, which means that PCI-Express 3.0 x8 has the same bandwidth as PCI-Express 2.0 x16. But before you celebrate, let's remind ourselves that you also need a PCI-E 3.0 compliant GPU to make the slots operate at Gen 3.0 speeds. Installing PCI-Express 2.0 GPUs on Gen 3.0 won't run the slots at Gen 3.0 speeds. That aside, the Z68A-GD80 is a sufficiently-equipped enthusiast motherboard featuring 14-phase VRM for the CPU, dual-channel DDR3-2133 support, two PCI-E 3.0 x16 slots (x8/x8 with populated), a third PCI-E x16 wired to the Z68 PCH, running at PCI-E 2.0 x4 speeds, and a couple of PCI-E 2.0 x1 and legacy PCI. There are three internal SATA 6 Gb/s ports; eSATA, USB 3.0, make for the rest of the connectivity. There is full-fledged display connectivity, with Lucid Virtu support. Expect this board to be out any time soon.

Intel is preparing to unveil its next-generation processors based on the Ivy Bridge architecture as early as by Computex 2011 (May 30 to June 4), according to Commercial Times, a Chinese language business newspaper. Ivy Bridge is an optical shrink of the Sandy Bridge architecture, processors based on it will be manufactured on the 22 nanometer silicon fabrication process. Intel launched its Sandy Bridge 32 nm processors at CES 2011, in January. In related news from the same source, AMD has also accelerated the production of its Llano APUs and is expected to begin shipping the APUs to ODM/OEM makers in May at the earliest instead of the original schedule set in the third quarter.

Intel Corporation announced today that the company will invest between $6 billion and $8 billion on future generations of manufacturing technology in its American facilities. The action will fund deployment of Intel's next-generation 22- nanometer (nm) manufacturing process across several existing U.S. factories, along with construction of a new development fabrication plant (commonly called a "fab") in Oregon. The projects will support 6,000 to 8,000 construction jobs and result in 800 to 1,000 new permanent high-tech jobs.

"Today's announcement reflects the next tranche of the continued advancement of Moore's Law and a further commitment to invest in the future of Intel and America," said Intel President and CEO Paul Otellini. "The most immediate impact of our multi-billion-dollar investment will be the thousands of jobs associated with building a new fab and upgrading four others, and the high-wage, high-tech manufacturing jobs that follow."

GLOBALFOUNDRIES today announced it officially broke ground on the construction of Fab 2, a new semiconductor manufacturing facility located at the Luther Forest Technology Campus in Saratoga County, New York. Once completed, Fab 2 will stand as the most technologically advanced semiconductor manufacturing facility, or fab, in the world and the largest leading-edge semiconductor foundry in the United States. The construction and ramp-up phases for the new $4.2 billion facility are expected to take approximately three years to complete, with volume production expected in 2012.

"Semiconductors are the building blocks of technology innovation and are present in everything from mobile phones to kitchen appliances and solar panels," said Hector Ruiz, chairman of GLOBALFOUNDRIES. "As today's chip designers push the boundaries on the next generation of products, there is a growing need for a new approach to design and manufacturing rooted in collaboration and innovation. With Fab 2, GLOBALFOUNDRIES moves the semiconductor industry away from the traditional model of isolated regional development and into an era of global hubs of manufacturing and technology expertise."

In its effort to meet the ever-increasing demands of consumer technology, the semiconductor industry has long been preoccupied with smaller transistors and larger silicon wafers. While these are important tactics, opportunities for increasing efficiency, becoming more agile, and minimizing waste are often overlooked in manufacturing processes, according to Thomas Sonderman, vice president of manufacturing systems and technology at GLOBALFOUNDRIES.

At SEMICON West 2009, Sonderman is calling for a renewed focus on operational agility in the semiconductor manufacturing industry, particularly in light of increased pressure to move to processes based on 450 millimeter (mm) wafers.

GLOBALFOUNDRIES today described an innovative technology that could overcome one of the key hurdles to advancing high-k metal gate (HKMG) transistors, bringing the industry one step closer to the next generation of mobile devices with more computing power and vastly improved battery life.

The semiconductor industry is celebrated for overcoming seemingly insurmountable odds to continue the trend toward smaller, faster, and more energy-efficient products. Performed in partnership with IBM through GLOBALFOUNDRIES' participation in the IBM Technology Alliance, the new research is designed to enable the continued scaling of semiconductor components to the 22 nanometer node and beyond.

IBM and its chip development partners announced today that they've developed the first functional 22nm silicon fabricated SRAM cell. This puts them ahead of Intel, which had announced its technological entry into the 32 nm domain in September, 2007. SRAM is usually the first semiconductor device a chip-maker tests a new fabrication-process on, before working on microprocessors. These devices were developed and manufactured by AMD, Freescale, IBM STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE). They were built in the conventional 6-transistor design and on a 300 mm wafer. This level of miniaturization made the SRAM cell shrink to a mere 0.1 sq. μm, compare this to the SRAM cells that go into making caches on the 45 nm Intel processors, 0.346 sq. μm.