During this year's Flash Memory Summit, Phison, a company known for SSD controllers and now flash drives, demonstrated a system running AMD Ryzen 7000 series processors based on Zen 4 architecture. What is interesting about the shown specification is that the system was running an engineering sample of an upcoming Zen 4-based CPU with the latest storage technologies at impressive speeds. Using a Phison PS5026-E26 SSD controller, also called E26, the PCIe 5.0 SSD is powered by Micron's latest 232-layer TLC NAND flash. This new NAND technology will also bring greater densities to the market by promising higher endurance, higher read/write speeds, and better efficiency.

With AMD's upcoming AM5 platform, support for PCIe 5.0 SSDs is a welcome addition. And we today have some preliminary tests that show just how fast these SSDs can run. In CrystalDiskMark 8.0.4, it achieved over 10 GB/s in both read and write. We know that the E26 controller is capable of 12 GB/s speeds, so more fine-tuning is needed. Being an early sample, we expect final specifications to be better. The system is powered by an engineering sample of a six-core, twelve-threaded Zen 4 CPU running at unknown clocks, codenamed 100-000000593-20_Y. We can expect to see more of this technology once AMD's AM5 platform lands and Phison-powered SSDs hit the shelves in September.

Micron Technology, Inc., today announced that it has begun volume production of the world's first 232-layer NAND, built with industry-leading innovations to drive unprecedented performance for storage solutions. It features the industry's highest areal density and delivers higher capacity and improved energy efficiency over previous generations of Micron NAND, to enable best-in-class support of the most data-intensive use cases from client to cloud.

"Micron's 232-layer NAND is a watershed moment for storage innovation as first proof of the capability to scale 3D NAND to more than 200 layers in production," said Scott DeBoer, executive vice president of technology and products at Micron. "This groundbreaking technology required extensive innovation, including advanced process capabilities to create high aspect ratio structures, novel materials advancements and leading-edge design enhancements that build on our market-leading 176-layer NAND technology."