Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced high-volume availability of 30-nanometer (nm) reduced-power DDR3L-RS SDRAM for ultrathin computing devices and tablets. The 2-gigabit (Gb) and 4 Gb solutions reduce power consumption in standby to provide longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

"Micron has been one of the leaders in the development and commercialization of DDR3L-RS and the introduction of its 30 nm product is confirmation of this," said Mike Howard, senior principal analyst, DRAM and Memory at IHS iSuppli. "DDR3L-RS is an excellent option for customers who have tight power budgets and need high performance at a competitive price. We expect many of the next-generation ultrathin platforms to take advantage of DDR3L-RS."

Micron Technology, Inc. is extending its legacy of memory leadership by introducing a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin markets. These 2-gigabit (Gb) and 4 Gb "DDR3Lm" solutions focus on low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

The first 2 Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2 Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4 Gb DDR3Lm product delivers the same optimized power efficiency as the 2 Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2 Gb and 4 Gb DDR3Lm will be adopted into Micron's 30-nanometer (nm) class to further optimize the power and performance features, with the 4 Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.