Silicon manufacturers in South Korea and Taiwan have questioned the requirements outlined in the United States Chips and Science Act - South Korean President Yoon Suk Yeol spoke on Thursday March 30, and said that there was a growing concern within companies Samsung Electronics Corporation and SK Hynix Inc. with regard to criteria for new U.S. semiconductor subsidies. Excess profit sharing is one area of contention, as the U.S. government will expect dividends to be paid under special conditions. The companies are also reluctant to meet the requirements of submitting detailed information about fab capacity and yield estimates. Leaders are pointing to the potential sensitive nature of exposing too much confidential corporate strategy to bodies in the USA, and sources within Samsung and SK Hynix are worried that budgetary planning information will be revealed in minute detail.

The CHIPS Act grants a $52 billion pool of research and manufacturing funds, and subsidies would be sourced from it. SK Hynix's parent group is considering an application in order to gain access to funding via the CHIPS Act, the SK Group has formed plans to invest $15 billion of its own money into the U.S. chip manufacturing sector - a North American location for an advanced chip packaging plant is being decided upon. Samsung has invested a substantial $25 billion into its Texas operation, so is eligible to receive U.S. government subsidies as well.

Semiconductor manufacturers worldwide are forecast to increase 300 mm fab capacity to an all-time high of 9.6 million wafers per month (wpm) in 2026, SEMI announced today in its 300 mm Fab Outlook to 2026 report. After strong growth in 2021 and 2022, the 300 mm capacity expansion is expected to slow this year due to soft demand for memory and logic devices.

"While the pace of the global 300 mm fab capacity expansion is moderating, the industry remains squarely focused on growing capacity to meet robust secular demand for semiconductors," said Ajit Manocha, SEMI President and CEO. "The foundry, memory and power sectors will be major drivers of the new record capacity increase expected in 2026."

Crucial is keen to drum up early interest for an upcoming SSD model, and the Linus Tech Tips team has received and tested a sample unit. The T700 is a PCIe Gen 5 NVMe M.2 SSD storage solution based around a Phison PS5026-E26 controller, which is a very common choice for the current generation of PCIe 5.0 SSDs available on the market. Micron 3D NAND chips look to be present on the T700's PCB, and a Crucial-branded heatsink is mounted to the provided sample unit. It is interesting to note that the uncovered T700 unit bears a striking resemblance to Phison's E26 Engineering Reference sample, although the latter appears to feature SK Hynix memory chips, instead of Micron.

The LTT team posted benchmark results from a Crystal Disk Mark test session, and the T700 achieved maximums of 12.4 GB/s sequential read and 11.9 GB/s write speeds. This represents an almost two fold jump over the performance of Crucial's PCIe 4.0 based P5 Plus SSD, which is a substantial improvement and also very impressive considering the T700's usage of a passive cooling solution.

SK Hynix representatives unveiled the company's latest breakthrough in 3D NAND development at the ISSCC 2023 conference. Details of a new flash memory prototype featuring over 300 layers were revealed, and the company stated that a team of 35 engineers had contributed to the presentation material. In order to highlight the boost in performance offered by the prototype's improvements, it was compared to SK Hynix's previous record holding seventh-generation 238-layer 3D NAND. The new eighth-generation 3D NAND posted bandwidth figures with a maximum of 194 MB/s, which contrasts favorably with the older model's rate of 164 MB/s, representing an 18% increase in performance.

Recording density also benefits from the 300+ active layer design, with SK Hynix mentioning a 1 Tb (128 GB) capacity with triple level cells and a bit density of over 20 GB/mm^2. The chip features a 16 KB page size, four planes and a 2400 MT/s interface. The increase in density will result in a lower per-Tb cost during the manufacturing process. It is hoped that the end consumer will ultimately benefit from the boost in performance and capacity.

Although DRAM is using much less refined production processes compared to the latest processors and GPUs, all the major manufacturers are continuing to shrink their manufacturing nodes step by step. Part of the reason for this, is that a node shrink doesn't have the same improvements for DRAM as it does for most types of field-effect transistors or FETs, which are mostly used for making processor logic of some kind. SK Hynix is now said to have entered the partner verification process of its 5th gen 1β DRAM, to make sure its latest 1x nm DRAM is compatible with major applications. In SK Hynix's case this should roughly translate to a 12 nm process node.

According to Chosun Media in Korea, Intel will take part in this verification, with Intel having finished verification of SK Hynix's 4th gen 1α DRAM for its 4th gen Xeon Scalable processor. Initially, SK Hynix's 5th gen 1β DRAM will be targeting server applications, so it's likely it will be tested for compatibility with the same platforms from Intel, among others. The new 1β DRAM is said to increase efficiency by more than 40 percent, although the publication didn't mention if this is power efficiency or something else. The 1β DRAM from SK Hynix, as well as Samsung—who announced its 1β DRAM in December 2022—are made using an EUV lithography process and the two Korean DRAM makers are the only two makers of DRAM that are using EUV so far.

SK Hynix ran into issues earlier this month at one of its DRAM production fabs, due to impurities in zirconium high-k materials used in the production. The materials were supplied by SK Trichem and due to the impurities, the equipment at SK Hynix fab ended up leading to increased pressure in some of the manufacturing equipment and forced the production to be shut down. All the equipment at the fab had to be cleaned and some even replaced due to the impurities in the material.

The zirconium high-k material is deposited at the atomic level, atop the capacitors of the DRAM, as a precursor. Any impurities in such a material would lead to failed DRAM chips, but apparently there was no damage to the DRAM wafer production in this case, according to SK Hynix. The company will be ordering replacement material from two other suppliers for the time being and SK Trichem should be supplying a fresh batch by the end of the month.

SK hynix Inc. (or "the company") reported today financial results for 2022 ended on December 31. The company recorded revenues of 44.648 trillion won, an operating profit of 7.007 trillion won and a net income of 2.439 trillion won. Operating and net profit margin for the full year was 16% and 5%, respectively. "Revenues continued to grow last year, but the operating profit decreased compared with a year earlier as the industry entered into a downturn from the second half," the company said. "With uncertainties still lingering, we will continue to reduce investments and costs, while trying to minimize the impact of the downturn by prioritizing markets with high growth potential."

In 2022, SK hynix increased high-capacity DRAM shipments for server/PC markets, while boosting sales of DDR5 and HBM - of which products that the company has a solid market leadership - to customers in the growing markets of AI, Big Data, and cloud computing. Particularly, revenues for the data center SSD more than quadrupled compared with a year earlier.

SK hynix Inc. announced today that it has developed the world's fastest mobile DRAM 'LPDDR5T (Low Power Double Data Rate 5 Turbo)' and provided sample products to customers. The new product, LPDDR5T, operates at a data rate of 9.6 gigabits per second (Gbps), 13% faster than the previous generation LPDDR5X unveiled in November 2022. To highlight the maximum speed the product features, SK hynix added 'Turbo' at the end of the standard name LPDDR5.

LPDDR5T, which operates in the ultra-low voltage range of 1.01 to 1.12 V set by the JEDEC (Joint Electron Device Engineering Council), is a product that not only features utmost speed but ultra-low power consumption. "The company pushed the technology to new limits in just two months after LPDDR5X, mobile DRAM with 8.5 Gbps specification, was introduced to the market in November 2022," SK hynix said. "We will solidify our leadership in the mobile DRAM market by providing products of various storage capacities that meet customers' needs."

SK hynix Inc. (or "the company", www.skhynix.com) announced today that its DDR5 product for servers using 1anm, the fourth generation of the 10 nm process technology, has been validated on the 4th Gen Intel Xeon Scalable processor (formerly codenamed Sapphire Rapids) for the first time in the industry. "The validation of the 1anm DDR5 compatibility by Intel for its newest processor that supports DDR5 for the first time is monumental," SK hynix said. "We will seek a fast turnaround in the semiconductor memory industry by actively responding to the growing server market through DDR5, which is already in mass production."

The validation of the company's 1anm DDR5 product, which adopts 1anm technology using the EUV lithography process, is for 4th Gen Intel Xeon Scalable processors, Intel's latest server CPU launched on January 10th. The 4th Gen Intel Xeon Scalable processor has been cited as a key to a turnaround in the industry, given that the launch of a next-generation server CPU requires server replacement and thus, results in a rapid increase in demand for high-performance memory chips. Experts predict that DDR5, expected to meet customers' such needs, will soon become the flagship product in the server DRAM market.

TrendForce's latest analysis of the DRAM market finds that the inventory pressure on suppliers remain significant due to the persistently weak demand for consumer electronics. Among the top three DRAM suppliers, only Samsung has seen a slight drop in inventory level thanks to its highly competitive pricing strategy. To prevent DRAM prices as a whole from making another sharp dive, a few suppliers such as Micron have been cutting production. Therefore, the QoQ decline in DRAM prices are projected to shrink to around 13~18% for 1Q23. However, the slump will have yet to reach the bottom at that time. Regarding the QoQ changes in the prices of the major categories of DRAM products for 1Q23, PC DRAM and server DRAM are projected to again register a drop that is near 20%. Conversely, mobile DRAM will experience the smallest price decline because its profit margin is ready the thinnest.

YMTC, the Chinese DRAM and NAND flash company that recently announced a 232-layer 3D NAND flash memory that threatened to disrupt entrenched players Samsung, Micron Technology, Kioxia, and SK Hynix, has been blacklisted by the U.S. Department of Commerce, forcing American consumer electronics and PC manufacturers to stop sourcing from the company. Capitalizing on just this, Samsung raised prices of its NAND flash memory chips by as much as 10%, according to a DigiTimes report.

YMTC peaked when Apple struck a NAND flash supply deal with the company in 2020, which would see its storage devices power pretty much every Apple product you can think of, however, under political pressure, Apple withdrew from this deal in 2022. The Department of Commerce contention has been to that YMTC has access to cutting-edge technology, and is backed by Chinese state-capacity, which can help it drive out competitors. All is not well between the U.S. and China geopolitically, either. Samsung's 10% increase in the first half of December 2022 concerns spot-pricing, which could mean its contract pricing (usually used by customers placing very large orders), could be different. It is conceivable that the exit of YMTC from the U.S. market could raise NAND flash product prices across the board.

Netac, a Chinese maker of memory and storage devices, has developed DDR5 memory modules with impressive speeds. The company has used SK Hynix A-type dies to create DDR5 memory with up to 8000 MT/s rates. With incredible speeds comes significant latency, whereas the DDR5-8000 memory kit comes with a CAS latency of 38-48-48-128. Netac has determined that these DRAM modules require as much as 1.5 Volts to power it. The base kit starts at 6000 MT/s, with 6200/6600/7200/7600 and 8000 MT/s variations mentioned above. Available in silver and black, these memory modules are equipped with an ARGB strip at the top that works with every RGB control software of motherboard makers.

You can check out the images and specification table below.

Market intelligence firm TrendForce reports that the whole NAND Flash market was severely weakened by plummeting demand in 3Q22. Because shipments of end products including consumer electronics and servers had been below expectations, the overall NAND ASP fell by 18.3% QoQ. Furthermore, the general economic outlook remained pessimistic, so enterprises across many sectors started to scale back their capital expenditure plans and halted the momentum of their procurement activities. Due to this development, the problem of excess inventory eventually spread to NAND Flash suppliers. The pressure on suppliers to make sales was ratcheted up dramatically. According to TrendForce's investigation, NAND Flash bit shipments fell by 6.7% QoQ for 3Q22, and the overall NAND Flash ASP also kept sliding. On account of the unfavorable market situation, the NAND Flash industry recorded a total revenue of around US$13.71 billion for 3Q22. The QoQ revenue decline reached as much as 24.3%.

The ranking of NAND Flash suppliers by revenue saw two notable changes for 3Q22. First, SK Group moved down to third place as it suffered the largest revenue drop among suppliers. Its revenue slipped by 29.8% QoQ to US$2.54 billion mainly due to the significant deterioration of the demand for PCs and smartphones. Its subsidiary Solidigm was also affected by the slowdown in server procurements. Previously, servers had a fairly stable demand situation compared with other kinds of end products. However, server demand eventually buckled in 3Q22 as result of enterprises cutting capital expenditure and undergoing a period of inventory correction. Compared with 2Q22, SK Group (that encompasses SK hynix and Solidigm) posted a drop of 11.1% in bit shipments and an even steeper decline of more than 20% in ASP.

Global market intelligence firm TrendForce reports that for 3Q22, the revenue of the whole DRAM industry dropped by 28.9% QoQ to US$18.19 billion. This decline is the second largest to the one that the industry experienced in 2008, when the global economy was rocked by a major financial crisis. Regarding the state of the DRAM market in 3Q22, the QoQ decline in contract prices widened to the range of 10~15% as the demand for consumer electronics continued to shrink. Server DRAM shipments, which had been on a relatively stable trend compared with shipments of other types of DRAM products, also slowed down noticeably from the previous quarter as buyers began adjusting their inventory levels.

Turning to individual DRAM suppliers' performances in 3Q22, the top three suppliers (i.e., Samsung, SK hynix, and Micron) all exhibited a QoQ drop in revenue. Samsung posted US$7.40 billion and a QoQ drop of 33.5%, which was the largest among the top three. SK hynix's revenue fell by 25.2% QoQ to around US$5.24 billion. As for Micron, its revenue came to around US$4.81 billion. Since Micron marks its fiscal quarters differently, its DRAM ASP showed a QoQ decline that was smaller than the ones suffered by the two Korean suppliers. And as a result of this, Micron's QoQ revenue decline was also the smallest among the top three. TrendForce points out that the top three are still maintaining a relatively high operating margin at this moment. Nevertheless, the inventory correction period that has started this year will last through the first half of next year, so they will experience a continuing squeeze on profit.

SK hynix has developed LPDDR5X (Low Power Double Data Rate 5X), the world's first-ever mobile DRAM with an integrated HKMG (High-K Metal Gate) process, which was just recently introduced to the market. The LPDDR5X boasts the industry's highest energy-efficiency as SK hynix succeeded in reducing power consumption by 25% compared to the previous generation and operates in the ultra-low voltage range of 1.01 V to 1.12 V set by the JEDEC (Joint Electron Device Engineering Council).
For the LPDDR, which is also called a mobile DRAM, having a low power consumption is its greatest asset, just as its standard name—LP (Low Power)—suggests. As power is limited in mobile devices, it's necessary to reduce power consumption as much as possible to extend the usage time.

This is why lowering power consumption is just as important as increasing operating speed. LPDDR5X was the first among mobile DRAMs to integrate the HKMG process and see improved performance and a reduction in power consumption, essentially killing two birds with one stone. As the power consumption of DRAM gets lowered by LPDDR5X, mobile devices can be used for a longer time with a single charge. The reduction in power consumption of such products can subsequently lead to a reduction in the power used by consumers, which is in line with the value of SK hynix's ESG-centered business management.

SK hynix Inc. reported today revenues of 10.98 trillion won, operating profit of 1.66 trillion won (with OP margin of 15%), and net income of 1.1 trillion won (with net income margin 10%) in the third quarter of 2022. Sales and operating profits decreased 20.5%, 60.5% respectively QoQ. SK hynix analyzed that revenues fell QoQ as both sales volume and price decreased due to sluggish demand for DRAM and NAND products amid worsening macroeconomic environment worldwide. In addition, SK hynix explained that despite the company improved cost competitiveness by increasing the sales proportion and yield of the latest 1anm DRAM and 176-layer 4D NAND, operating profit also decreased due to greater price drop than cost reduction.

SK hynix diagnosed that the semiconductor memory industry is facing an unprecedented deterioration in market conditions as uncertainties in the business environment continued. The deterioration occurred as the shipments of PCs and smartphone manufacturers, which are major buyers of memory chips, have decreased.

Just two months after introducing the first CXL memory sample in August, SK hynix has successfully developed a computational memory solution, becoming the industry's first to integrate computational functions into CXL memory. The solution, a result of a close collaboration with SK Telecom from early on for optimization of the next-generation, high-performance computing infra system, marks a meaningful case where SK Group's ICT companies converged their technologies for a joint development.

Unveiling both the CMS and its software platform at the Open Compute Project (OCP) Global Summit 2022 taking place from Oct. 18 in San Jose, USA, SK hynix showed a next-generation high-performance computing infrastructure solution as well as the value of the solution from the customer's perspective. The solution is expected to be installed on next-generation server platforms to improve system performance as well as energy efficiency.

SK hynix Inc. announced today that the U.S. government has clarified its position with respect to its latest export control regulations, issued by the U.S. Department of Commerce's Bureau of Industry and Security (BIS) on Friday, October 7, 2022. In an official letter from BIS, the agency assured SK hynix that the company, as well as its current suppliers and business partners, is still authorized to engage in activities necessary to maintain current production of integrated circuits in China for one year without further licensing requirements.

"Our discussions with the Department of Commerce led to an approval to supply equipment and items needed for development and production of DRAM semiconductors in Chinese facilities without additional licensing requirements," the company said. The new rules require a license for export, re-export or transfer (in-country) to China items including manufacturing equipment and support for DRAM chips 18 nm and below, NAND chips with 128 layers or more and logic chips 14 nm and below.

Stock prices of major semiconductor foundry companies such as TSMC and Samsung took a major beating on Monday. TSMC, Taiwan's premier foundry, sees its share prices drop by 7.1%, its lowest since Q1 2021. Samsung Electronics dropped by as much as 3.9%, and SK Hynix by 3.5%. Bloomberg reports that the selloffs in Asian markets may have been triggered by traders returning on Monday from a week's holiday reacting to fresh curbs on semiconductor sales to China by the Biden administration. The publication also remarks that global tech stocks have had their worst month since the October 2008.

"The latest U.S. move would prompt China to move faster in fostering the domestic chip industry," said Omdia analyst Akira Minamikawa. "Japanese firms should continue trading with Chinese firms with goods not restricted because the business is business. But they should be ready for a future--maybe in a decade or two--when they lose all the Chinese customers as a result of the current tension dialing up speed of the Chinese efforts."

SK Hynix at the 2022 Intel InnovatiON event, showed off some unconventional server memory capacities. The company presented DDR5 RDIMMs in 48 GB and 96 GB densities, besides the usual 32 GB, 64 GB, and 128 GB ones. These are being offered in data-rates of DDR5-5600 and DDR5-6400, which indicates that DDR5-5600 (JEDEC-standard) could be the standard memory speed supported by Xeon Scalable "Sapphire Rapids" processors, with some (or all) models also supporting DDR5-6400. These are not XMP or overclocking SPDs, but JEDEC-standard ones that the processors can automatically train to. The flagship product among SK Hynix's booth would have to be a mammoth 256 GB DDR5-5600 RDIMM, which should enable servers with up to 4 TB of memory per socket (@2 RDIMMs per channel).

As reported by BusinessKorea, Apple, one of the largest companies in the world, will source its 3D NAND from Chinese memory maker Yangtze Memory Technologies Corp (YMTC). Known for supplying 3D NAND to Chinese SSD makers, YTMC's reported contract with Apple will fuel the upcoming iPhone 14 SKU manufacturing. Whether or not this partnership will expand to other products, it is essential to have as many storage sources as possible, as Apple sells millions of devices per year. YTMC is on track to deliver 3D NAND flash with the latest Xstacking 3.0 six-plane architecture that provides triple-level cell storage with I/O speeds of 2400 MT/s.

YTMC has joined the list of 3D NAND flash vendors that Apple works with, including SK Hynix, Samsung, Kioxia, and possibly others. This partnership also highlights that the Chinese memory output is sufficient and significant enough to break into more markets worldwide, not remaining exclusive to domestic use.

SK hynix Inc. announced today that it will build the M15X (eXtension), a new fabrication plant, in Cheongju, Chungcheongbuk-do, in preparation for future growth. The company will start construction of the M15 extension on the site it secured previously earlier than initially planned, considering various market situations. The new plant will be built from October on the 60,000㎡ land located in the Cheongju Technopolis industrial complex and completed early 2025. A total of 15 trillion won will be injected over the next five years to build the fab and set up production facilities. The fab will be a two-story building equivalent to a combination of M11 and M12 in size.

As for the next M17 fab, the company will decide construction plan after reviewing overall business environment including changes in the semiconductor business cycle. "Looking back on the past 10 years, SK hynix could grow into a global company as it boldly carried out investment during crisis," said Vice Chairman and Co-Chief Executive Park Jung-ho. "As we look to prepare for the next 10 years now, I believe starting the M15X will be a first step to lay foundation for a solid future growth."

According to TrendForce research, material supply improvement and spiking demand for enterprise SSDs from North American hyperscale data center and enterprise clients in 2Q22 coupled with the Kioxia contamination incident in 1Q22 prompted customers to ramp up procurement to avoid future supply shortages. Manufacturers also give priority to meeting the needs of server customers due to the high pricing of enterprise SSD. In the second quarter, overall revenue of the enterprise SSD market increased by 31.3% to US$7.32 billion.

As the market leader, Samsung has grown its enterprise SSD revenue to US$3.26 billion with the recovery of enterprise SSD procurement. Especially in the second quarter, when orders for other consumer products continued to decline, enterprise SSD became the company's outlet for reducing production capacity. At present, Samsung has been continuously investing in the development of next-generation transmission specification products such as the CXL 2.0 product released at the Flash Summit in early August, in order to maintain a leading position in the market.

SK hynix Inc. announced today that it has developed the industry's highest 238-layer NAND Flash product. The company has recently shipped samples of the 238-layer 512Gb triple level cell (TLC) 4D NAND product to customers with a plan to start mass production in the first half of 2023. "The latest achievement follows development of the 176-layer NAND product in December 2020," the company stated. "It is notable that the latest 238-layer product is most layered and smallest in area at the same time."

The company unveiled development of the latest product at the Flash Memory Summit 2022 in Santa Clara. "SK hynix secured global top-tier competitiveness in perspective of cost, performance and quality by introducing the 238-layer product based on its 4D NAND technologies," said Jungdal Choi, Head of NAND Development at SK hynix in his keynote speech during the event. "We will continue innovations to find breakthroughs in technological challenges."

SK hynix has developed its first DDR5 DRAM-based CXL (Compute Express Link) memory samples and strengthened its presence in next-generation memory solutions market. The form factor of the sample is EDSFF (Enterprise & Data Center Standard Form Factor) E3.S and it supports PCIe 5.0 x8 Lane, uses DDR5 standard DRAM and is equipped with CXL controllers. CXL, which is based on PCIe (Peripheral Component Interconnect Express), is a new standardized interface that helps increase the efficiency of utilizing CPUs, GPUs, accelerators, and memory. SK hynix has participated in the CXL consortium from an early stage, and is looking to secure CXL memory market leadership.

The essential point of the CXL memory market is expandability. The CXL memory allows for flexible memory expansion compared to current server market, where the memory capacity and performance are fixed once the server platform is adopted. CXL also has high growth potential as it is an interface spotlighted for high performance computing systems such as AI and big data related applications.