As the semiconductor industry begins its transition to the next technology node, GLOBALFOUNDRIES is on track to take its position as the foundry technology leader. On October 1 at the Global Semiconductor Alliance Emerging Opportunities Expo & Conference in Santa Clara, Calif., GLOBALFOUNDRIES (Booth 321) will provide the latest details on its technology roadmap for the 32nm/28nm generations and its innovative "Gate First" approach to building transistors based on High-K Metal Gate (HKMG) technology.

"With each new technology generation, semiconductor foundries are increasingly challenged with the economics to sustain R&D and the know-how to bring these technologies to market in high-volume," said Len Jelinek, director and chief analyst, iSuppli. "With a heritage of rapidly ramping leading-edge technologies to high volumes at mature yields, combined with aggressive investments in capacity and technology, GLOBALFOUNDRIES is uniquely-positioned to challenge for next-generation foundry leadership."

Taiwan Semiconductor Manufacturing Company, Ltd. has become the first foundry not only to achieve 28 nm functional 64 Mb SRAM yield, but also to achieve it across all three 28 nm nodes.

"Achieving 64 Mb SRAM yield across all three 28 nm process nodes is striking. It is particularly noteworthy because this achievement demonstrates the manufacturing benefits of the gate-last approach that we developed for the two TSMC 28 nm high-k metal gate processes," explained Dr. Jack Sun, vice president, Research and Development at TSMC.

"This accomplishment underscores TSMC's process technology capability and value in 28 nm. It shows TSMC is not only able to extend conventional SiON technology to 28 nm, but is also able to deliver the right 28 nm HKMG technology at the same time," explained Dr. Mark Liu, senior vice president, Advanced Technology Business at TSMC.

GLOBALFOUNDRIES today announced it officially broke ground on the construction of Fab 2, a new semiconductor manufacturing facility located at the Luther Forest Technology Campus in Saratoga County, New York. Once completed, Fab 2 will stand as the most technologically advanced semiconductor manufacturing facility, or fab, in the world and the largest leading-edge semiconductor foundry in the United States. The construction and ramp-up phases for the new $4.2 billion facility are expected to take approximately three years to complete, with volume production expected in 2012.

"Semiconductors are the building blocks of technology innovation and are present in everything from mobile phones to kitchen appliances and solar panels," said Hector Ruiz, chairman of GLOBALFOUNDRIES. "As today's chip designers push the boundaries on the next generation of products, there is a growing need for a new approach to design and manufacturing rooted in collaboration and innovation. With Fab 2, GLOBALFOUNDRIES moves the semiconductor industry away from the traditional model of isolated regional development and into an era of global hubs of manufacturing and technology expertise."

Nearly a month since AMD's introduction of the 40 nm RV740 GPU, there is still no concrete sign of a 40 nm GPU from NVIDIA slated for anytime soon, apart from timely scoops on the GT300. Sources at graphics card vendors however seem confident that by the end of 2009, 40 nm GPUs will constitute at least 30% of NVIDIA's GPU shipments, that too sourced from TSMC, a foundry-partner which has been in the news off late, for technical problems with their 40 nm node, that are affecting its output efficiency.

What's more, NVIDIA seems to have expressed interest in becoming one of the first clients for TSMC's upcoming 28 nm process that is expected to become a reality in Q1 2010. This should also tell you that for GPUs, the next step for silicon fabrication technology will be 28 nm, unlike 32 nm for CPUs.