Rambus Inc., the innovative technology solutions company, and SK Hynix, the world's top tier memory semiconductor supplier, today announced they have signed a five-year patent license agreement for the use of Rambus memory-related patented innovations in SK Hynix semiconductor products and have also settled all outstanding claims. The agreement includes a license to certain DRAM products for payments of $12 million per quarter for the next five years. Other terms of the agreement are confidential.

"This is a milestone agreement for both companies that puts years of legal disputes behind us and gives us the opportunity for collaboration," said Dr. Ron Black, president and chief executive officer at Rambus. "With this agreement, we can focus more on engaging with the industry as we work on future challenges where we can bring invention and value to the market with superior solutions and products."

SK Hynix Inc. announced that it has developed the world's first 8 Gb(Gigabit) LPDDR3 (Low Power DDR3) using its advanced 20nm class process technology. This product is a top-performance mobile memory solution which features high density, ultrahigh speed and low power consumption.

The new products can be stacked up and realize a high density of maximum 4 GB(Gigabytes, 32 Gb) solution in a single package. In addition, the height of this package becomes dramatically thinner than the existing 4 Gb-based one. In terms of its high density and competitive package height, it is suitable for the newest trend of the mobile applications.

Possibly the most well-equipped GeForce GTX 650 Ti Boost, Colorful's iGame graphics card combines the mid-range GPU, otherwise meant for 1080p gaming on a shoestring budget, with its signature paraphernalia. To begin with, the company cools the 140W TDP chip with its most powerful iGame VGA cooler, which uses a combination of three aluminum fin stacks, to which heat from the GPU is fed by five 8 mm-thick nickel-plated copper heat pipes; and which are ventilated by a pair of 80 mm fans. Since the card has memory chips on both sides, Colorful dropped in a brushed aluminum back-plate as well.

Colorful's iGame GTX 650 Ti Boost uses a custom-design PCB, with a 4+1 phase VRM, and hand-binned Hynix-made memory chips for high memory overclock. The PCB features two independent EEPROM chips, giving you dual-BIOS support. It ships with a failsafe BIOS that falls back to NVIDIA-reference clock speeds of 980 MHz core, 1033 MHz GPU Boost, and 6.00 GHz memory; while a factory-OC "Turbo" BIOS ups the GPU Boost to 1058 MHz. The card draws power from two 6-pin PCIe power connectors, to ensure your overclock doesn't fall short of power; display outputs include two dual-link DVI, and one each of HDMI and DisplayPort. Colorful didn't announce price, but plans to launch the card in the Greater China region, and the EU. Another "go big or go home" product from Colorful.

Tessera Technologies, Inc. announced today that its Tessera, Inc. and Invensas Corporation subsidiaries each entered into new eight-year patent license agreements with SK hynix Inc.

"We are delighted that these new and broader agreements build on our long-standing and positive relationship with SK hynix, which has become the first DRAM manufacturer to reach agreements that give it access to both our Tessera, Inc. and our Invensas Corporation patent portfolios," said Robert A. Young, chief executive officer and president, Tessera Technologies, Inc. "Multi-year agreements like these benefit our customers with secure pricing and provide us with running royalties that fund new innovations."

Japanese PC memory maker OCMemory launched a new line of high-speed PC memory that stays cool without need fancy heatsinks or heatspreaders. The OCM2400CL10D-8GBN, launched in the series, takes advantage of Hynix high-density CFR DRAM chips to achieve DDR3-2400 MHz speeds, with timings of 10-12-12-31, and 1.65V, without needing any additional cooling components. In addition to a JEDEC-approved DDR3-1600 MHz fallback SPD profile, it includes an XMP profile to use its advertised speeds. The sticks use 8-layer black PCBs to improve signaling efficiency. The kit includes two 4 GB modules, and is priced at 6,000¥ ($72).

According to DRAMeXchange, a division of global research firm TrendForce, as forecast in a previous report, DRAM contract price showed signs of stabilization in November; the previous US$1 to $2 monthly decline is narrowing, and DDR3 4 GB contract price is holding at the US$15 mark. TrendForce expects the contract price trend will only show a slight decrease in December, and may even stay flat for the month.

As spot market prices fluctuate more than contract prices, the spot market is often a good indicator of future DRAM prices. This week the spot market is seeing increased activity; DDR2 and 2 Gb eTT and DDR2 prices have increased by 1.24% and 1.09%, respectively. Top-tier memory makers began quietly building inventory in October, and spot market buyers seem to be following suit, providing an opportunity for a price rebound. TrendForce believes the DRAM spot price uptrend is due prior capacity cuts taking effect as well as strong entry-level tablet, or "Mobile Internet Device", shipments in China.

According to DRAMeXchange, a research division of TrendForce, as PC shipments are continually adjusted downwards and yearly growth has decreased by 5% YoY, demand for the peak season is not as strong as expected and the oversupply situation continues to worsen. As a result, contract price for 2 Gb chips fell by 22.5% in the third quarter, from US$1.11 in July to US$0.86 in September. Server and mobile DRAM are also showing falling price trends, resulting in an 8.5% drop in the value of the DRAM industry compared to the previous quarter; DRAM suppliers' revenues are falling across the board. However, looking at third quarter demand, with strong shipments for mobile devices like smartphones and tablet PCs, mobile DRAM accounted for 25% of total DRAM output, a significant increase from less than 20% in the second quarter. Consequently, market share is on the rise for memory makers with higher mobile DRAM ratios, like Samsung and Elpida. For the DRAM industry, improving core competitiveness lies in proper product adjustment, the key to profitability with such bleak market conditions.

Market research firm TrendForce released NAND flash shipment figures for 3Q 2012. The global NAND flash market is valued at US $4.626 billion, a healthy 6.6% growth over the previous quarter. A TrendForce DRAMeXchange report provided a break-down of shipments of NAND flash by manufacturers. Leading the pack is Samsung, with 41.2% market-share, registering a 1.8% QoQ growth. Trailing behind is Toshiba, with 24.7% market share, and a significant 12.9% QoQ growth. In September, Toshiba cut prices and scaled up production, which may have contributed to the growth. Micron holds 14.4% of the market with 2.8% growth, SK Hynix 11.6% with 6.4% growth (the company began mass-production of SSD-grade NAND flash this quarter), and Intel with 7.6% of the market-share, growing at 19.7%. Bear in mind, these numbers represent NAND flash components used not only in SSDs, but also USB flash drives, memory cards, etc.

According to DRAMeXchange, a research division of TrendForce, given the persistent oversupply situation in the global DRAM market, along with the -5% YoY shipment growth for PCs, October contract prices have dropped below $16 USD, and are continuing to approach the $15 USD mark. The trends pose as yet another test to the cost structures of DRAM makers. With prices approaching or dropping below cash cost, manufacturers are faced with the option of either undergoing production cuts or shifting their focus towards non-DRAM products.

Other than ProMOS, which chose to quit the DRAM market due to financial woes, manufacturers like Elpida and Rexchip have taken the initiative to lower their output levels in August. Powerchip, beginning September, took a similar initiative by adjusting P3 wafer levels, whereas in the following month, Nanya and Inotera made the official announcement to implement 20% production cuts. For the South Korean DRAM manufacturers, whose cost structures appear to be superior to those of other competitors, no production cuts have been announced nor taken, although efforts to control output ratios have been intensified. At the same time that production of commodity DRAM is being lowered, an increasing amount of emphasis is being placed on the production of the more profitable mobile and server DRAMs.

Korean DRAM makers Samsung and SK Hynix have each stepped up efforts to scale up production on the new 20 nanometer silicon fabrication process, to make in the mainstream DRAM manufacturing process in 2013. The two have already begun volume production of DRAM on the 20 nm process in 2012, however, 30 nm remains as the mainstream DRAM production process. By 2H-2012, the 20 nm process could take its place. The two companies will gradually shift their focus from PC DRAM to enterprise and mobile DRAM, as PC DRAM continues to reel with oversupply.

Exceleram announced some new memory modules and 8 GB dual channel kits with Hynix CFR chips. "Our new "X Series" is now ready," said Mr. Kent Lee, Marketing Director, Exceleram. Following is the Overview of the X Series with the Hynix CFR Chips:

• E30106X 2GB (1x2GB) 1333MHz, CL9, 1.5V, w/o Heatsink
• E30112X 4GB (1x4GB) 1333MHz, CL9, 1.5V, w/o Heatsink
• E30149X 4GB (1x4GB) 1600MHz, CL11, 1.5V, w/o Heatsink
• E30146X 4GB (1x4GB) 1600MHz, CL9, 1.5V, w/o Heatsink
• E30150X 4GB (1x4GB) 1866MHz, CL9, 1.65V, w/o Heatsink
• E30138X 8GB (2x4GB) 1866MHz, CL9. 1.65V, Black Sark Heatsink

Intellectual Ventures (IV) announced today that it has reached settlement agreements with SK hynix Inc. and Elpida Memory, Inc. and resolved all pending patent infringement litigation with both companies.

"Intellectual Ventures has reached amicable settlements with both SK hynix and Elpida in the three patent infringement actions we filed against the companies over the past two years," said Melissa Finocchio, vice president and chief litigation counsel for Intellectual Ventures. "IV has built a world-class portfolio of semiconductor patents, and our preference is to sign license agreements and form productive, long-standing relationships with innovative companies rather than to litigate."

Rambus Inc., one of the world's premier technology licensing companies, today announced that the judge for the Northern District of California (NDCA) has issued his decision in the matter with SK Hynix. The Honorable Ronald M. Whyte has found that the Rambus patents in this case are valid and infringed by SK Hynix and Rambus is entitled to receive royalty payments for past infringement based on reasonable and non-discriminatory (RAND) rates.

"This is a positive result as it is consistent with what we've been seeking all along - reasonable compensation for the use of our patented inventions," said Thomas Lavelle, senior vice president and general counsel at Rambus. "We appreciate the Court's extensive efforts in working through years of complex arguments. While this decision does not provide SK Hynix with a going-forward license, we are hopeful it will lead to putting this matter behind us completely and allow us to reach reasonable agreements."

SK Hynix announced that it has introduced DDR3L-RS (Reduced Standby) DRAM for mobile solutions using its 20nm class technology. This product significantly reduces the standby power consumption.

By using cutting-edge 20nm class technology and efficiently managing standby current, this DDR3L-RS product reduces 70% of standby power compared to existing DDR3L DRAM while it maintains DDR3L performance. DDR3L DRAM which has recently gone mainstream works at 1.35V, while DDR3 DRAM does at 1.5V.

Strontium Technology has announced a new series of high-performance solid state drives (SSDs) named HAWK. These Hynix-built solid state drives with Strontium branding are based on SandForce's SF2281 controller and SK Hynix Flash. These drives are said to be a good upgrade option featuring 500MB/s of read and write performance and also claim to offer faster performance for PCs and Macs. Needless to say, SSDs feature enhanced durability, shock-proof, silent operation and are more reliable as compared to traditional hard drives.

The 2.5-inch HAWK drive is available in 120GB and 240GB storage capacities. The sequential (256KB, MAX) read speed is 510 MB/s and write speed is 470 MB/s. The random (4KB, MAX) performance is 50,000 IOPS read and 38,000 IOPS write. It comes with support for SATA I/ II/ III interface, TRIM Support (O/S support required) and has a Mean Time between Failures (MBTF) of 1.2M. Strontium HAWK SSD has been designed to offer quicker boot up and shorter lead time in the loading of applications to enhance productivity.

SK Hynix announced its launch of client SSD (Solid State Drive). The SSD features faster speed and low power consumption than HDD (Hard Disk Drive) so it is expected to replace the HDD as another type of storage for PCs and other applications.

The first ever SK Hynix's client 2.5" SSD consists of ONFI synchronous NAND Flash memory using 20nm class process and densities of 128GB (Gigabyte) and 256GB are available. It significantly improves the speed and reliability by adopting SATA III interface with data transmissions at 6Gb/s (Gigabits per second). This high performance SSD generates sequential read speeds of 510MB/s (Megabytes per second) and sequential write speeds of 470MB/s. It is three or four times faster than the traditional HDD.

Hard drive prices refuse to budge after last year's floods that struck manufacturing facilities in Thailand, even as manufacturers turn record profit. The solid-state drive market, on the other hand, is finally rolling with competition, high volume production, and advancements in NAND flash technologies. With memory majors such as Hynix adding new NAND flash manufacturing facilities to their infrastructure, SSD is expected to finally get its big break in the mainstream market.

SSD prices, according to price aggregators, are on a free-fall. Models which once held relative pricing as high as $2 per gigabyte, and going deep within the $1 mark. For example, Crucial's widely-praised M4 256 GB SSD has a price per GB of 'just' $0.82, and a market price around $200, something unheard of, for a 256 GB SSD with transfer rates of over 500 MB/s. With SSD major OCZ Technology releasing new generations of drives under the Vertex 4 and Agility 4 series that use Indilinx processors, older Vertex 3 and Agility 3 models are being phased out, some of these are seeing sub $1/GB prices. Intel is also responding to market trends, with prices of its SSD 520 series dropping sharply. Find a boat-load of stats at the source.

SK hynix Inc. ('SK hynix' or 'the Company') announced that it has entered into an agreement to acquire California-based storage solution company Link_A_Media Devices Corporation ('LAMD'). LAMD, founded in 2004, is a leader in the development of semiconductor system-on-chip (SoC) solutions for the data storage market. These SoC solutions, also called controllers, interface with processors to significantly increase the speed and reliability of Flash memory. Upon completion of the acquisition, LAMD will join SK hynix as a business unit focused on customized NAND based solutions.

As various mobile applications such as smartphones and tablet PCs are being rapidly adopted and cloud computing grows in popularity, the NAND Flash market has been evolving from raw NAND memory solutions for USB and memory cards to value-added products equipped with controllers. The role of the NAND controller in premium products such as e-MMC (embedded Multi Media Card) and SSDs (Solid State Drives) has become increasingly important to meet the high memory densities and improved interface speeds required by end users.

Korean memory giant SK Hynix is launching its own branded consumer and enterprise SSD lines, à la Samsung (the other Korean memory giant). It is starting off with high-performance consumer SSDs targeting Ultrabooks, built in the 2.5-inch 7 mm-thick SATA form-factor. The SH910 series SSDs combine Hynix' homegrown H27QDG8VEBIR-BCB MLC NAND flash chips built in the 25 nm fab process, with LSI-SandForce SF-2281 processor.

The drive will be initially available in two capacities, 128 GB and 256 GB (higher than usual capacities thanks to adjusted overprovisioning). Both drives offer sequential transfer speeds of up to 520 MB/s reads with 500 MB/s writes; up to 60,000 IOPS 4K random seek, 35,000 IOPS random write; and feature-set that includes 128-bit AES encryption, TRIM, NCQ, and SMART. A performance review can be found at the source.

SK Hynix Inc., today announced a joint development agreement and a technology license agreement with IBM for the development of Phase Change Random Access Memory (or 'PCRAM') technology.

IBM brings years of research experience in phase change memory technology, as well as profound know-how in developing multi-level cell (MLC) technology. Last June, IBM researchers demonstrated a reliable multi-bit, phase-change memory technology that would allow computers and servers to boot instantaneously and significantly enhance the overall performance of IT systems. Combining IBM's expertise in such disciplines with SK Hynix's cutting-edge manufacturing process optimization and cost competitiveness will help to accelerate the commercialization of PCRAM technology.

Century Japan started selling a [relatively] affordable 16 GB DDR3-1600 MHz (PC3-12800) ECC Registered DIMM. The module runs at 1600 MHz with timings of 11-11-11, and has been tested on EVGA SR-X platform to achieve 192 GB (12 x 16 GB), scraping the address-space limits of Windows 7 64-bit client operating systems. The 240-pin RDIMM uses 36 Hynix-made DRAM chips. In Japan, Century's new 16 GB RDIMM is priced at 25,000 JPY (US $314) a pop. For reference, DDR3-1066 MHz 16 GB RDIMMs are priced around $300.

Japanese DRAM maker Elpida has been reporting chronic financial problems since the beginning of 2012. It soon filed for bankruptcy, driving interest in competitors Toshiba, Global Foundries, Micron and Hynix (SK Hynix), to acquire it. Hynix has now reportedly withdrawn from the Elpida takeover bid. The withdrawal is likely due to its own financial situation. Hynix is not the first to withdraw from the bid, the first to drop out was Toshiba. With the two gone, Micron Technology is next in line, with a bid of US $1.4 billion to buy out Elpida.

Solid manufacturing and strong pricing allowed Micron Technology Inc. and Hynix Semiconductor Inc. to post strong performances in the global NAND flash business in the fourth quarter, allowing them to narrow the gap in market share between them and the industry leaders, and setting the stage for further advances in 2012.

No. 3-ranked Micron Technology Inc. of the United States achieved 11.7 percent revenue growth in the fourth quarter compared to the third, according to a new IHS iSuppli Data Flash Market Tracker report from information and analytics provider IHS. Meanwhile, fourth-placed Hynix Semiconductor Inc. of South Korea expanded its revenue by 5.4 percent, as presented in the table below.

Worldwide semiconductor revenues increased more than 3.7% year over year to $301 billion in 2011, according to the latest version of the International Data Corporation (IDC) Worldwide Semiconductor Applications Forecaster (SAF). The industry weathered the macroeconomic uncertainties in the U.S and Europe, the earthquake and tsunami in Japan, China's slow down in the second half of the year, and floods in Thailand. Meanwhile, device applications, such as smartphones, media tablets and e-readers, automotive infotainment, notebook PCs, datacenter servers, and wireless and wired communication infrastructure drove robust consumption of semiconductors.

IDC's SAF tracks more than 100 semiconductor companies. Over 40 of these companies experienced year-over-year revenue growth greater than 5%, while about the same number of companies saw their revenue decline by more than 5%.

With over-production, swelling-inventories, and cutthroat competition that doesn't allow even subtle price-increases, DDR3 is a lost-cause for DRAM makers such as Samsung. It is hence hedging its bets on the early arrival of DDR4, and the only company that can make that happen is Intel. Samsung is not only a major supplier of DRAM memory, but also a big player in server memory. It had its first DDR4 UDIMM ready as early as in January 2011. Reports of Intel slating DDR4-equipped platforms in 2013 has Samsung perturbed. Samsung and Hynix are the only two DRAM majors with developed DDR4 products. According to DigiTimes' analysis, DRAM vendors see DDR4 as the only way they can pull themselves out of their ailing situation.