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ATP Electronics, the global leader in specialized storage and memory solutions, has introduced its latest line of e.MMC devices built on 3D triple level cell (TLC) NAND. Using a new die package, the E750Pi/Pc and E650Si/Sc Series offer long-life performance, optimized power consumption and customizable configuration options. ATP's new E750Pi/Pc Series e.MMC offerings are built with 3D TLC NAND flash but are configured as pseudo SLC (pSLC) to offer endurance on par with SLC NAND, while E650Si/Sc Series in native TLC has near-MLC endurance.

The E750Pi and E650Si Series are industrial temperature-operable (-40°C to 85°C), making them ideal for deployment in scenarios with extreme thermal challenges and harsh environments, while E750Pc and E650Sc support -25°C to 85°C operating temperatures for applications with non-critical thermal requirements.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of the next version of its High Bandwidth Memory (HBM) DRAM standard: JESD238 HBM3, available for download from the JEDEC website. HBM3 is an innovative approach to raising the data processing rate used in applications where higher bandwidth, lower power consumption and capacity per area are essential to a solution's market success, including graphics processing and high-performance computing and servers.

AMD is preparing a round of updates to its desktop Radeon RX 6000 series in the wake of RTX 30-series models by NVIDIA, according to Greymon55, a reliable source with GPU rumors. The company could be leveraging faster 18 Gbps GDDR6 memory chips for the task. This wouldn't be the first RX 6000 series products with 18 Gbps memory, as the liquid-cooled MBA (made-by-AMD) RX 6900 XT that's exclusive to OEMs, already comes with 18 Gbps memory clocks.

Mass-production of JEDEC-standard GDDR6 memory chips with data-rates as high as 20 Gbps and 24 Gbps by Samsung is expected to get underway later this year. The company is already sampling these chips, and it's likely that they may feature in the next round of product-stack updates by AMD and NVIDIA. In the run up to its next-gen RDNA3 graphics architecture, AMD is rumored to be working on a refresh of RDNA2 on the new TSMC N6 (6 nm) foundry node that it already leverages for the entry-level "Navi 24" ASIC. This is expected to open up headroom to dial up engine clocks, and possibly support faster memory. As for this latest refresh with 18 Gbps memory, if AMD's naming convention for its mobile RX 6850M is anything to go by, the new SKUs could feature a similar "xx50" model numbering.

Since 2020, data centers have seen additional development opportunities driven by new infrastructure. For this reason, DDRs have been developed to become faster and more efficient. On July 14, 2020, JEDEC released the DDR5 SDRAM standard, marking the industry-wide transition to DDR5 server dual in-line memory modules (DIMMs). In China, mainstream manufacturers are gradually focusing on DDR5, striving to promote its widespread commercialization. DDR5 brings with it a series of crucial improvements to help empower next-gen servers with better performance and lower power consumption.

With 22 years of experience in the storage industry, Longsys is constantly accumulating industrial experience while remaining centered on R&D technology. As the first company in China to do so, it has made multiple DDR5 test data items publicly available. FORESEE, the industrial storage brand of Longsys, has recently launched commercial DDR5 U-DIMM, available in 16 GB and 32 GB options.

Apacer's consumer and gaming DDR5 memory modules are finally available! The DDR5-4800 delivers 16 GB of DRAM at 4800 MHz and draws just 1.1 V. That leaves DDR4 modules far behind in the rear-view mirror. Performance, capacity, stability and power efficiency are all taken to the next level. In addition to the standard DDR5 memory module, Apacer is launching a NOX DDR5 gaming memory module. This will provide gamers with extremely stable overclocking capabilities with a single click. Power consumption management is also upgraded in DDR5.

Apacer's DDR5-4800 modules are compliant with the JEDEC standard. And their operating frequency of 4800 MHz is a 50% increase in bandwidth compared to the standard DDR4 upper frequency limit of 3200 MHz.

Samsung has started sampling high-speed 24 Gbps-rated GDDR6 memory chips. Just to be clear, these are standard GDDR6 chips built to JEDEC-specifications, and not GDDR6X, a derivative standard co-developed by NVIDIA and Micron leveraging PAM4 signaling. The 24 Gbps chips by Samsung can be used by both NVIDIA and AMD, if their GPU designs can handle the data-rates. The specific part number for the chip is "K4ZAF325BC-SC24." This chip has a density of 16 Gb (2 GB), which means 8 of these make up 16 GB across a 256-bit wide memory bus, and 12 of these make 24 GB across a 384-bit bus.

At 24 Gbps, these chips offer 50% more bandwidth than 16 Gbps, and 71% more than 14 Gbps. A hypothetical 6 nm refresh of the "Navi 21" paired with these chips, would hence have 768 GB/s of memory bandwidth on top of its Infinity Cache bandwidth, compared to 512 GB/s on the current Radeon RX 6800 XT. Since the chip is sampling, it's likely that both AMD and NVIDIA have their hands on it. There's no word on when the chip hits mass-production, but this could definitely happen within 2022.

KINGMAX, has introduced the latest DDR5 4800 MHz 16 GB desktop memory. Fully compatible with Intel's 12th-generation Alder Lake and Z690 platform, it has secured the QVL certification of a good number of main stream motherboard manufacturers, thereby attesting to its platform compatibility essential for this new era for PCs already here.

Compared with its predecessors, DDR5 4800 MHz memory stands out as an utter upgrade in overall performance. In terms of speed, DDR5 starts with a base frequency of 4800 MHz and its bandwidth of 38.4 MB/s is at least 1.5 times faster than the maximum of 25.6 MB/s offered by its DDR4 3200 MHz peers. Coupled with dual sub-channels (32-bit) that run independently, data processing becomes substantially more efficient as the memory controller enjoys a much lower data access latency.

Micron Technology, Inc. announced today that MediaTek Inc. has validated Micron's low-power double data rate 5X (LPDDR5X) DRAM for MediaTek's new Dimensity 9000 5G flagship chipset for smartphones. Micron is the first semiconductor company to sample and validate this fastest, most advanced mobile memory in the industry and has shipped the first batch of samples of LPDDR5X built on its first-to-market 1α (1-alpha) node. Designed for high-end and flagship smartphones, Micron's LPDDR5X allows the smartphone ecosystem to unlock the next wave of data-intensive applications powered by artificial intelligence (AI) and 5G innovation.

The market delivery and validation of Micron's industry-leading 1α-based LPDDR5X solidifies its product innovation and leadership in the mobile ecosystem, following industry-first launches for LPDDR5, 1α-based LPDDR4X, 176-layer NAND-based UFS 3.1 and uMCP5 solutions. This most recent milestone follows quickly on the heels of JEDEC's July release of the LPDDR5X extension to LPDDR5, created to offer higher bandwidth and memory speed for enhanced 5G communication and performance while still conserving power. Micron has validated samples supporting data rates up to 7.5 Gb/s, with samples supporting data rates up to 8.533 Gb/s to follow. Peak LPDDR5X speeds of 8.533 Gb/s deliver up to 33% faster performance than previous-generation LPDDR5.

"Innovating cutting-edge smartphone experiences requires memory technology built to address the massive bandwidth demands of the mobile market," said Raj Talluri, senior vice president and general manager of Micron's Mobile Business Unit. "Our collaboration with MediaTek to validate the world's most advanced mobile memory empowers the ecosystem to deliver the next wave of rich mobile features enhanced by 5G and AI."

During Samsung's Tech Day 2021, the company presented some interesting insights about the future of system memory technologies and how it plans to execute its production. Starting with the latest DDR5 standard, the company intends to follow JEDEC documents and offer some overclocking modules that surpass the specification advised by JEDEC. While the DDR5 standard specifies memory modules with 6,400 MT/s, Samsung will develop modules capable of overclocking up to 8,400 MT/s. These are not yet confirmed as they are still in the development phase. However, we can expect to see them in the later life of DDR5 memory.

The company also talked about the DDR6 standard, which is supposedly twice as fast as DDR5. The new DDR6 standard is still in early development, and all we know so far is that the number of memory channels per module is seeing a twofold increase over DDR5 to four channels. The number of memory banks also increases to 64. In addition to DDR6 for desktop and server use cases, the company is also working on Low Power DDR6 (LPDDR6) for mobile applications. While the company's LPDDR5 memory goes into volume production using the 1a-nm process at the beginning of 2022, the LPDDR6 is still in early development. The base speed for DDR6 modules will allegedly arrive at 12,800 MT/s, while overclocking modules will join the party at up to 17,000 MT/s. Mobile-oriented LPDDR6 version is also supposed to come with up to 17,000 MT/s speeds.

PNY today announces specifications and availability for its upcoming Desktop Performance and XLR8 Gaming DDR5 memory products. The three models include the overclocked XLR8 Gaming MAKO and MAKO RGB models, running at 5600 MHz and a CAS latency of 36, as well as the PNY Performance model that follows JEDEC standards.

The XLR8 Gaming MAKO and MAKO RGB modules have been designed to meet the needs of gamers and enthusiasts. The designs for both modules feature aluminium heat spreaders with elements inspired by the powerful, fast and aggressive Mako shark from which they get their name. An XLR8 logo and GAMING text is proudly emblazoned on the side of the module and silver angled relief lines are machined into the heatspreader to reflect other components' lighting and provide unmatched flair and style.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced publication of the JESD79-5A DDR5 SDRAM standard. This update to the JEDEC DDR5 SDRAM standard includes features designed to enhance reliability and performance in a wide range of applications involving client systems and high-performance servers. JESD79-5A is now available for download from the JEDEC website.

Added features designed to meet industry demand for improved system reliability include bounded fault error-correction support, Soft Post-Package Repair (sPPR) undo and lock, Memory Built-In Self-Test Post Package Repair (MBIST and mPPR), Adaptive RFM, and an MR4 extension. JESD79-5A expands the timing definition and transfer speed of DDR5 up to 6400 MT/s for DRAM core timings and 5600 MT/s for IO AC timings to enable the industry to build an ecosystem up to 5600 MT/s. The nomenclature for core timing parameters and their respective definitions has been revamped to closely align with the upcoming JEDEC JESD400-5 DDR5 Serial Presence Detect (SPD) Contents V1.0 standard. The document can be accessed here.

ADATA Technology, a manufacturer of high-performance DRAM modules, NAND Flash products, mobile accessories, gaming products, electric power trains, and industrial solutions today announces the ADATA DDR5-4800, a next-generation DDR5 memory module that is capable of reaching frequencies of up to 4800MT/s and comes with up to 32 GB of capacity. In addition, ADATA has worked with six major motherboard brands, including AORUS, ASROCK, ASUS, GIGABYTE, MSI and ROG to ensure optimal performance and compatibility across a wide range of motherboards.

"Through our strong R&D capabilities and close partnerships with the world's leading motherboard makers, we are committed to offering memory modules with next-generation performance, higher capacities, and enhanced stability," said Nick Dai, Senior Manager of DRAM Products at ADATA. "In the coming months, we will continue to launch a diverse array of DDR5 products to meet the different needs of creators, gamers, and other users."

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD233: XFM Embedded and Removable Memory Device (XFMD) standard. XFMD (XFM stands for Crossover Flash Memory) is a new universal data storage media providing an NVMe over PCI Express interface in a small, thin form factor. The device is designed to bring replaceable storage to devices typically soldered down in IoT devices and embedded applications. Developed by JEDEC's JC-64.1 Subcommittee for Electrical Specifications and Command Protocols, JESD233 is available for download from the JEDEC website.

JESD233 XFMD is a removable, versatile memory solution intended for use in a wide range of applications that require an easy device exchange. Examples include IoT devices, automotive applications, notebook PCs, gaming consoles, video recording devices (drones, surveillance systems, etc.), Extended Reality (AR, VR, MR), and more.

To maximize connectivity between the host and the device, JESD233 XFMD leverages industry-leading standards from PCI-SIG and NVM Express, Inc. The PCI Express interface provides fundamental bus connectivity and NVM Express serves as the higher level protocol for accessing the non-volatile media as a low-latency logical storage device.

PC enthusiast memory and storage brand Neo Forza, detailed its plans to roll out DDR5 memory for desktop PCs. It also sheds light on some of the possible combinations of memory speed and density under development. Q4 2021 is when the company's first DDR5 memory modules will debut. These will be basic, bare-PCB modules with specs and speeds closest to JEDEC's. The company will start out with DDR5-4800 MHz modules, with densities of 8 GB, 16 GB, and 32 GB. The starting CAS latency on these things appears to be 40T. From what we gather, 16 GB will be the new single-rank standard memory size, 8 GB single-rank will be a low-cost option; while 32 GB could be commonly dual-rank, rarely single-. These modules will likely be co-branded with authorized DRAM IC providers.

Vanilla DDR5-4800 modules are only the beginning. Neo Forza plans to develop gaming-grade memory modules, complete with chunky heatspreaders, RGB LED illumination, and more importantly, higher clock speeds. The company expects that as DDR5 matures as a standard, speeds of DDR5-6400, DDR5-7200, and DDR5-8600, will become common for the enthusiast segment. The higher frequency modules will likely be 16 GB single-rank. As densities ramp up, 64 GB dual-rank modules will be possible, and Neo Forza expects to ship 128 GB (2x 64 GB) dual-channel kits, or scale out to 4-channel thru 8-channel HEDT platforms.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD209-5B, Low Power Double Data Rate 5 (LPDDR5). JESD209-5B includes both an update to the LPDDR5 standard that is focused on improving performance, power and flexibility, and a new LPDDR5X standard, which is an optional extension to LPDDR5.

Taken together, LPDDR5 and LPDDR5X are designed to significantly boost memory speed and efficiency for a variety of uses including mobile devices, such as 5G smartphones and artificial intelligence (AI) applications. Developed by JEDEC's JC-42.6 Subcommittee for Low Power Memories, JESD209-5B is available for download from the JEDEC website.

Western Digital Corp. today announced its second-generation UFS 3.1 storage solution for 5G smartphones. The new Western Digital iNAND MC EU551 delivers the high-performance storage consumers need to be able to use their phones for emerging applications like ultra-high-resolution cameras, AR/VR, gaming and 8K video.

IDC expects 5G smartphone shipments to account for more than 40% of global volume in 2021 and grow to 69% in 2025. As networks continue to expand available bandwidth and offer lower latency to enable new user experiences, Western Digital's iNAND solutions deliver the high-capacity, high-performance embedded storage needed to power these exciting new applications.

At the end of 2020, TEAMGROUP reached a cooperation agreement with top DRAM wafer manufacturers and started working on DDR5 technology. Since then, TEAMGROUP has dedicated to the research and development of DDR5 modules, collaborating with various major motherboard manufacturers to ensure that each R&D stage undergoes comprehensive testing and to deliver products of the highest quality that the industry has ever seen. TEAMGROUP is leading the industry today as we announce our official launch of the world's first DDR5 memory module for desktops, the TEAMGROUP ELITE U-DIMM DDR5, which is estimated to be available on major EC platforms for consumers worldwide by the end of June and the beginning of July.

The initial launch of TEAMGROUP ELITE DDR5 memory module will support 16GBx2 of capacity at a frequency of 4800 MHz, with a voltage of 1.1 V CL40-40-40-77, which complies with the standard specifications defined by the JEDEC association. Compared to the maximum 3200 MHz standard frequency in the DDR4 generation, the DDR5 is able to increase the speed to up to 50%. The low 1.1 V voltage is also more energy efficient than its previous generation; to ensure minimum noise interference for the memory module, the power management is transferred from the motherboard onto the memory with an additional power management IC (PMIC) for more effective system load control. The most incredible feature of ELITE DDR5 is doubling the 16 banks of DDR4 to those of 32 in DDR5 to improve the IC structure, providing double access availability. An on-die ECC (error correction code) included in the DRAM IC is also available for self-recovery of the DRAM unit, ensuring that DRAM systems with DDR5 can obtain higher levels of stability.

At its Flash Perspective Event today, Western Digital Corp. announced its new embedded flash platform for Universal Flash Storage (UFS) 3.1 to enable new applications in mobile, automotive, IoT, AR/VR, drones and other emerging segments that are reshaping the way we live, work and play.

In an increasingly mobile world of always on, always connected and always available, Western Digital's unique UFS 3.1 platform, based on the JEDEC-compliant UFS 3.1 specification, provides the speed, reliability and feature versatility that customers count on to build small, thin and lightweight solutions. Leveraging its vertical integration capability to optimize NAND, firmware, controller design, software and drivers, Western Digital can efficiently design purpose-built solutions for a variety of markets including mobile, IoT, automotive, and more - all leveraging a common UFS 3.1 architecture. Setting a new benchmark, this new platform is expected to deliver up to 90% improvement in sequential write performance, compared to its previous generation. This improvement will help realize 5G and Wi-Fi 6 download speed potential, delivering a better experience when consuming rich media files such as 8K video, as well as improved performance for applications such as burst mode photography.

The fifth iteration of DDR technology, called DDR5, is set to arrive later this year. Many makers of DDR4 technology are announcing their plans to switch to the new standard, and CORSAIR is no exception. Known as the maker of high-quality products, CORSAIR has today posted a blog post teasing company's upcoming DDR5 products, and what they will be bringing to the table. For starters, the company has posted data about DDR5 modules that run at 6400 MHz speed, which is assumed to be the speed of the CORSAIR DDR5 modules when they arrive. At such speed, the memory can achieve a bandwidth of 51 GB/s, which is almost double the 26 GB/s that DDR4-3200 MHz memory achieves.

Another point CORSAIR wrote about is the capacity of a single DIMM. With DDR4, the company has made DIMMs that are only up to 32 GB in capacity. However, with DDR5, CORSAIR plans to quadruple that and build a single DDR5 DIMM that has up to 128 GB of memory on it. Another big point was the power required to run the new technology. The DDR4 standard required 1.2 Volts for operation, while the JEDEC specification says that DDR5 needs just 1.1 Volts to run. This will result in a cooler operation of memory modules.

Kingston Technology Company, Inc., a world leader in memory products and technology solutions, today announced it has sent overclockable DDR5 modules to its motherboard partners to begin qualification on the next-generation memory platform. Kingston engineered its DDR5 modules with a preset XMP profile, but also enabled our motherboard partners to manually adjust the power management integrated circuit (PMIC) beyond the 1.1 V DDR5 spec, thus allowing maximum flexibility to overclock. Kingston expects to ship its DDR5 solutions in Q3.

Memory validation requires cooperation of the entire computing ecosystem, and Kingston has forged close ties with the leading motherboard manufacturers and chipset makers throughout its 33-year history. This step continues the critical process of bringing leading high-performance and overclockable memory solutions to market later this year.

Netac, a Chinese company based in Shenzen claiming to be the inventor of USB flash drive, has reportedly started the research and development process of DDR5 memory modules that will outperform everything on the market. Netac is rumored to have started the development of DDR5 memory that will have a frequency of over 10,000 MHz. While the JEDEC specification notes that the DDR5 frequency range is between 4800-8400 MHz, manufacturers are always welcome to go over the official specifications. Being that Netac is a relatively new player in the PC memory space, we are wondering how the company plans to execute its plans.

A 10 GHz DDR5 memory would require a very high voltage to run, meaning high heat output. We know that DDR5 chips can run at 2.6 V, according to T-FORCE, who tested such a configuration earlier. The next potential problem would be a platform that could handle 10 GHz DDR5 memory, however, by the time we get this memory in our hands, platforms will mature enough to handle high-speed RAM. The first batch of new DDR5 memory that was sent to Netac was Micron's Z9ZSB modules, which are 2Gx8, CL40 memory modules. They are manufactured in the 1znm memory manufacturing node Micron uses. It is left to be seen what we end up with and if Netac delivers on its promise.

As the industry is preparing for a shift to the new DDR standard, companies are trying to adopt the new technology and many companies are manufacturing the latest DDR5 memory modules. One of them is Shenzhen Longsys Electronics Co. Ltd, a Chinese manufacturer of memory chips, which has today demonstrated the power of DDR5 technology. Starting with this year, client platforms are expected to make a transition to the new standard, with the data center/server platform following. Using Intel's yet unreleased Alder Lake-S client platform, Longsys has been able to test its DDR5 DIMMs running at an amazing 6400 MHz speed and the company got some very interesting results.

Longsys has demoed a DDR5 module with 32 GB capacity, CAS Latency (CL) of 40 CL, operating voltage of 1.1 V, and memory modules clocked at 6400 MHz. With this being an impressive memory module, this is not the peak of DDR5. According to JEDEC specification, DDR5 will come with up to 8400 MHz speeds and capacities that are up to 128 GB per DIMM. Longsys has run some benchmarks, using an 8-core Alder Lake CPU, in AIDA64 and Ludashi. The company then proceeded to compare these results with DDR4-3200 MHz CL22 memory, which Longsys also manufactures. And the results? In AIDA64 tests, the new DDR5 module is faster anywhere from 12-36%, with the only regression seen in latency, where DDR5 is doubling it. In synthetic Ludashi Master Lu benchmark, the new DDR5 was spotted running 112% faster. Of course, these benchmarks, which you can check out here, are provided by the manufacturer, so you must take them with a grain of salt.

In the name of Odin, Chinese manufacturer Asgard has launched their first DDR5 memory modules to market - beating some competing western companies that are still "gearing up" for it. Owned by the much less interestingly-named Shenzhen Jiahe Jinwei Electronic Technology Co., Ltd., Asgard likewise lost some of its flair in naming these DDR5 sticks - the best they could do was VMA5AUK-MMH224W3. The modules will be available in 32 GB, 64 GB and 128 GB per-stick densities.

The initial modules don't have any flair - they're built with the same green PCB that's actually the forerunner of today's colored ones. The company hs also announced that the modules win run at a relatively mild 4,800 MHz (the DDR5 specification goes up to 8,400 MHz), and that its timings coincide with JEDEC's "B" classification, which should mean 40-40-40. The voltage likewise remains at the JEDEC-set standard of 1.1 V. The company announced that mass-production rollout will only occur after there are actual CPUs and platforms that can take advantage of the DDR5 memory spec, and said that they expect Intel's Alder-Lake, Sapphire Rapids and Tiger Lake-U from the blue team, as well as Van Gogh and Rembrandt APUs from the AMD camp. No word on consumer pricing was available at time of writing.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JESD304-4.01 DDR4 NVDIMM-P Bus Protocol. The JEDEC NVDIMM-P standard will enable the industry to create advanced memory solutions that benefit from the enhanced system performance and novel data availability offered by Persistent Memory devices. JESD304-4.01 DDR4 NVDIMM-P is available for download from the JEDEC website.

As demand for DRAM capacity and bandwidth continues to grow, Hybrid DIMM technologies such as NVDIMM-P provide an innovative method for attaching emerging Persistent Memory in computing systems. Combining the access speeds of DDR with the reliability and capacity of non-volatile memories gives design engineers a new approach to data management. Much more than a standard DIMM specification, NVDIMM-P provides a full transactional interface protocol compatible with standard DRAM DIMMs along with a firmware programming model for the modules. NVDIMM-P simultaneously maximizes both re-use and flexibility by minimizing system host changes, providing an interface of the lowest latency to emerging memory, and offering flexible support for varied Persistent Memory media characteristics and use cases.