JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of Universal Flash Storage (UFS) version 3.0, JESD220D. In addition, new updates to related standards, JESD223D UFSHCI and JESD220-2A UFS Card Extension, have also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 3.0 is the first standard to introduce MIPI M-PHY HS-Gear4, with a data rate of up to 11.6 Gbps per lane, a 2x performance increase over prior versions of the specification. UFS 3.0 includes two features introduced specifically for the automotive market: the ability to function at an extended temperature range and refresh operation. JESD220D, JESD223D and JESD220-2A are available for download from the JEDEC website.

UFS is a high-performance interface designed for use in applications where power consumption needs to be minimized, including mobile systems such as smart phones and tablets as well as automotive applications. Its high-speed serial interface and optimized protocol enable significant improvements in throughput and system performance.

To achieve the highest performance and most power efficient data transport, JEDEC UFS leverages industry leading specifications from the MIPI Alliance to form its Interconnect Layer. This collaboration continues with UFS version 3.0, which references the MIPI M-PHY v4.1 physical layer specification and the recently released MIPI UniProSM v1.8 transport layer specification.

Greenliant Systems is now sampling its eMMC 5.1 NANDrive embedded solid state drive (SSD) product family with improved performance, enhanced features and a wide range of capacities (8, 16, 32, 64 and 128 GB). Ideal for automotive, industrial, medical, security, military and networking applications, the new GLS85VM NANDrive devices support the JEDEC eMMC 5.1 standard and operate at full industrial temperatures between -40 and +85 degrees Celsius.

The eMMC 5.1 NANDrive products are HS200/HS400 compliant and support command queuing for faster data throughput and better multitasking. These high-performance products also offer high-reliability features, such as advanced wear-leveling, bad block management and effective error correction code (ECC) capabilities to significantly extend the life of the product. eMMC 5.1 NANDrive SSDs are available in a 14mm x 18mm, 100-ball, 1.0mm pitch package (backward compatible with Greenliant's 100-ball eMMC 4.4 NANDrive SSDs) and will also be offered in a smaller 11.5mm x 13mm, 153-ball, 0.5mm pitch package.

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun shipping samples of embedded NAND flash memory products for automotive applications that are compliant with JEDEC UFS version 2.1. The new products meet AEC-Q100 Grade2 requirements and support a wide temperature range of -40°C to +105°C, offering the enhanced reliability capabilities that are required by increasingly complex automotive applications. The line-up meets a broad range of applications requirements with five different capacities: 16 GB, 32 GB, 64 GB, 128 GB and 256 GB.

The new products are embedded NAND flash memory products that integrate NAND chips fabricated with 15 nm process technology and a controller in a single package. Storage requirements for automotive applications continue to increase as systems including automotive information & entertainment systems and ADAS become more sophisticated, and UFS supports their high performance and density needs. The addition of automotive UFS expands Toshiba Memory Corporation's line-up of embedded NAND flash memory products for automotive applications, which currently includes automotive e-MMC products. Utilizing the UFS interface allows the new products to achieve sequential read of 850 MB/s and random read of 50,000 IOPS, which are approximately 2.7 times and 7.1 times faster than their current e-MMC counterparts, respectively.

Toshiba Memory Corporation, the world leader in memory solutions, has today started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32 GB, 64 GB, 128 GB and 256 GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

Kingmax, a memory expert, released Zeus Dragon DDR4 on November 13, 2017. This is made for gamers and DIY enthusiasts. The innovative design is integrated with aesthetics and functions which amazes everyone. Gamers can enjoy its appearance and function.

Zeus Dragon DDR4 uses aluminum alloy heat sink to effectively emit heat, therefore protecting memory and extending the service life. Zeus Dragon uses the dragon symbol blending both Eastern and Western style. The luxurious etchings present the superiority of the dragon and display the assertiveness and dignity of royalty. The dragon is above all other creatures and has extraordinary power and stunning speed. Besides its shiny scales, its powerful magic is neck and neck when it fights against Zeus, the ruler of all gods, in order to protect treasure.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is introducing the industry's first embedded Universal Flash Storage (eUFS) solution for use in next-generation automotive applications. Consisting of 128-gigabyte (GB) and 64GB versions, the new eUFS solution has been designed for advanced driver-assistance systems (ADAS), next-generation dashboards and infotainment systems that provide comprehensive connected features for drivers and passengers worldwide.

"We are taking a major step in accelerating the introduction of next-generation ADAS and automotive infotainment systems by offering the industry's first eUFS solution for the market much earlier than expected," said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. "Samsung is taking the lead in the growth of the memory market for sophisticated automotive applications, while continuing to deliver leading-edge UFS solutions with higher performance, density and reliability."

DDR5, the natural successor to today's DDR4 memory that brings with double the bandwidth and density versus current generation DDR4. along with delivering improved channel efficiency, is expected to be available in the market starting 2019. JEDEC, the standards body responsible for the DDR specifications, says that base DDR5 frequencies should be at around DDR5-4800 - more than double that of base DDR4's 2133, but a stone throw away from today's fastest (and uber, kidney-like-expensive) 4600 MHz memory kits from the likes of G.Skill and Corsair.

DDR5 is expected to support data rates up to 6.4 Gb/s delivering 51.2 GB/s max, up from 3.2 Gb/s and 25.6 GB/s for today's DDR4. The new version will push the 64-bit link down to 1.1V and burst lengths to 16 bits from 1.2V and 8 bits. In addition, DDR5 lets voltage regulators ride on the memory card rather than the motherboard. CPU vendors are also expected to expand the number of DDR channels on their processors from 12 to 16, which could drive main memory sizes to 128 GB from 64 GB today. Whether this will be good for end-users in relation to DDR5 memory prices remains open for debate; however, considering the rampant memory prices this side of 2017, chances are it won't be unless supply increases considerably.

SK Hynix Inc. today introduced the world's fastest 2Znm 8Gb (Gigabit) GDDR6 (Graphics DDR6) DRAM. The product operates with an I/O data rate of 16 Gbps (Gigabits per second) per pin, which is the industry's fastest. With a forthcoming high-end graphics card of 384-bit I/Os, this DRAM processes up to 768 GB/s (Gigabytes of graphics data per second). SK Hynix has been planning to mass produce the product for a client to release high-end graphics card by early 2018 equipped with high performance GDDR6 DRAMs.

GDDR is specialized DRAM for processing an extensive amount of graphics data quickly according to what graphics cards command in PCs, workstations, video players and high performance gaming machines. Especially, GDDR6 is a next generation graphics solution under development of standards at JEDEC, which runs twice as fast as GDDR5 having 10% lower operation voltage. As a result, it is expected to speedily substitute for GDDR5 and GDDR5X. SK Hynix has been collaborating with a core graphics chipset client to timely mass produce the GDDR6 for the upcoming market demands.

JEDEC Solid State Technology Association, responsible for creating the standards on which all of your versions of DDR memory are based upon, recently announced that development of the DDR5 memory standard is well underway, and in time for a 2018 release. The standards body said DDR5 memory will provide double the bandwidth and density versus current generation DDR4. along with delivering improved channel efficiency. Though considering the rate at which DDR4 prices have been increasing as of late, we really should fell a little uneasy at what this new memory standard's adoption will entail.

The current highest base clock that JEDEC allows in their DDR4 memory standard before "overclocking" takes over is DDR4-2400 - with timings ranging from 15~18 for the CAS latency, as well as tRCD, and tRP. And if, as JEDEC says, DDR5 is to be "twice as fast", that could imply that we could end up seeing DDR5-4800. Consider that for a moment: DDR4 kits today only go so far as DDR4-4266, and those are so few and far between that they'll cost you a singular kidney.

Rambus Inc. today announced the availability of its High Bandwidth Memory (HBM) Gen2 PHY developed for GLOBALFOUNDRIES high-performance FX-14 ASIC Platform. Built on the GLOBALFOUNDRIES 14nm FinFET (14LPP) process technology, the Rambus HBM PHY is aimed at networking and data center applications and designed for systems that require low latency and high bandwidth memory. This PHY is fully compliant with the JEDEC HBM2 standard and supports data rates up to 2000 Mbps per data pin, enabling a total bandwidth of 256 GB/s to meet the needs of today's most data-intensive tasks.

"Data center needs are continuously changing and we are at the forefront of delivering memory interface technology designed to meet today's most demanding workloads," said Luc Seraphin, senior vice president and general manager of the Rambus Memory and Interfaces division. "Through our collaboration with GLOBALFOUNDRIES, we are delivering a comprehensive and robust solution for high-performance data center and networking applications. Our HBM offering will allow data center solution developers to bring high performance memory closer to the CPU, thus reducing latency and improving the system throughput."

Innodisk, the service driven flash and DRAM provider, introduces the new DDR4 2666 memory modules designed for server applications on the upcoming Purley platform that Intel intends to release in 2017. The DDR4 2666 RDIMM is equipped with a Samsung chip which is designed with a new system circuit architecture to deliver even higher performance with lower power consumption.

"For years, Innodisk has been dedicated to developing and manufacturing industrial grade memory modules, and we have never stopped introducing industry leading products," said Samson Chang, Vice President of Embedded DRAM Business Unit of Innodisk. "We are proud to introduce the industry's first DDR4 RDIMM with an initial speed 2666 MT/s. It will optimize the Purley platform and maximize its performance. Innodisk will continue to develop more advanced product specifications in the future, allowing us to have the most complete product line amongst our competitors. Our goal is to support our customers various needs and lead the industrial systems upgrade."

Toshiba America Electronic Components, Inc. (TAEC) has enhanced its lineup of managed NAND devices with the addition of new Embedded Multimedia Card (e-MMC) and Universal Flash Storage (UFS) embedded memory solutions. Featuring enhanced integrated controller technologies, the new 'Supreme+' e-MMC (JEDEC ver. 5.1) and UFS (JEDEC ver. 2.1) offerings deliver significant read and write speed improvements to demanding applications.

In contrast to raw NAND flash memory solutions, e-MMC and UFS devices integrate NAND flash memory and a controller chip in a single package. This saves space and relieves host processors of the burden of key memory management functions including bad block management, error correction, wear leveling, and garbage collection. As a result, e-MMC and UFS devices simplify design when compared to standalone memory ICs with a standard NAND flash interface.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today unveiled the industry's first removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard*, for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Coming in a wide range of storage capacities including 256, 128, 64 and 32 gigabyte (GB), Samsung's UFS cards are expected to bring a significant performance boost to the external memory storage market, allowing much more satisfying multimedia experiences.

"Our new 256GB UFS card will provide an ideal user experience for digitally-minded consumers and lead the industry in establishing the most competitive memory card solution," said Jung-bae Lee, senior vice president, Memory Product Planning & Application Engineering, Samsung Electronics "By launching our new high-capacity, high-performance UFS card line-up, we are changing the growth paradigm of the memory card market to prioritize performance and user convenience above all."

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of several key updates to the Universal Flash Storage (UFS) family of standards. These include JESD220C UFS version 2.1, JESD223C UFSHCI version 2.1, JESD220-1A UFS UME version 1.1 and JESD223-1A UFSHCI UME version 1.1.

Developed for mobile applications and computing systems requiring high performance with low power consumption, the new UFS updates offer key improvements over earlier versions which will provide data security through the use of inline cryptography between the SoC and UFS Storage device. All four updated standards are available for free download from the JEDEC website.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220-2 Universal Flash Storage (UFS) Card Extension Standard. The new removable memory card standard standardizes functionality that aligns with the popular UFS embedded device standard. JESD220-2 is available for free download from the JEDEC website.

UFS is a high performance interface designed for use in computing and mobile systems such as smart phones and tablets where power consumption needs to be minimized. Its high speed serial interface and optimized protocol enable significant improvements in throughput and mobile system performance. The new UFS card standard provides a leading-edge removable storage solution while maintaining sequential and random IOPS performance that is critical for future mobile markets. Even using a single lane the UFS 1.0 card offers 600 MB/s interface speed in both directions and a state-of-the-art queuing mechanism to further increase system throughput.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD232 Graphics Double Data Rate (GDDR5X) SGRAM. Available for free download from the JEDEC website, the new memory standard is designed to satisfy the increasing need for more memory bandwidth in graphics, gaming, compute, and networking applications.

Derived from the widely adopted GDDR5 SGRAM JEDEC standard, GDDR5X specifies key elements related to the design and operability of memory chips for applications requiring very high memory bandwidth. With the intent to address the needs of high-performance applications demanding ever higher data rates, GDDR5X is targeting data rates of 10 to 14 Gb/s, a 2X increase over GDDR5. In order to allow a smooth transition from GDDR5, GDDR5X utilizes the same, proven pseudo open drain (POD) signaling as GDDR5.

"GDDR5X represents a significant leap forward for high end GPU design," said Mian Quddus, JEDEC Board of Directors Chairman. "Its performance improvements over the prior standard will help enable the next generation of graphics and other high-performance applications."

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of an update to JESD235 High Bandwidth Memory (HBM) DRAM standard. HBM DRAM is used in Graphics, High Performance Computing, Server, Networking and Client applications where peak bandwidth, bandwidth per watt, and capacity per area are valued metrics to a solution's success in the market. The standard was developed and updated with support from leading GPU and CPU developers to extend the system bandwidth growth curve beyond levels supported by traditional discrete packaged memory. JESD235A is available for free download from the JEDEC website.

JESD235A leverages Wide I/O and TSV technologies to support up to 8 GB per device at speeds up to 256 GB/s. This bandwidth is delivered across a 1024-bit wide device interface that is divided into 8 independent channels on each DRAM stack. The standard supports 2-high, 4-high and 8-high TSV stacks of DRAM at full bandwidth to allow systems flexibility on capacity requirements from 1 GB - 8 GB per stack.

Team Group Inc., the world's leading memory brand, today launched the gaming laptop upgrade memory-Neptune. The global PC market is experiencing a stagnation at this point of time. Gaming has become the essential key to push forward the sustainable development of PC/NB. In this vigorously growing market, Team Group has built the gaming memory Neptune specifically for gamers. With two frequencies DDR3 2133/1600, it ensures both performance and compatibility, providing gamers laptop upgrade and excellent solutions for customized Steam Machine.

Instead of using traditional JEDEC standard, Team Group's all new Neptune gaming laptop memory will go further into the area of gaming with previous experience in developing overclocking memory. DDR3 2133/1600 SO-DIMM is not only created for gaming laptops, but also making it possible to minimize high performance PC. No matter you want to play an epic time traveling adventure game, or battle in the thrilling frontline of a war game, Neptune is able to offer infinite possibilities for upgrading gaming performance under the existing platform.

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash application products, today launched Premier DDR4 2133 SO-DIMM memory, optimized for best performance with new Intel Skylake processors and their chipsets, as well as the Haswell-E platform. ADATA is keen to expand DDR4 adoption and encourage the move to a new generation of DRAM on notebooks, as DDR4 offers outstanding performance and greater power efficiency, assured by meticulous ADATA testing and backed by a limited lifetime warranty.

ADATA Premier DDR4 2133 SO-DIMM modules are offered in 4GB and 8GB densities, both clocked to a high speed 2133 MHz. This represents a performance boost over DDR3, which on notebooks has typically been clocked at 1333 MHz or 1600 MHz. DDR4 therefore brings a new phase in computer memory performance and just as with desktop PCs, ADATA believes notebook users stand to gain much by choosing DDR4. This applies to new notebooks that ship with DDR4 and importantly as an upgrade option for notebooks that are compatible with DDR4 but purchased with DDR3 for cost reasons. ADATA encourages users to upgrade to DDR4 to enjoy the benefits of this essential technological advancement in personal computing.

Super Talent Technology, a leading manufacturer of NAND Flash storage solutions, announces its very low profile single rank DDR4 4GB ECC 2133 Mhz UDIMM modules. Super Talents single rank 4GB DDR4 ECC UDIMMs target environments where space is vital and low clearance modules are required. Small form factor PCs can take advantage of the extra space saved with these parts. Fewer raw materials are used and less waste is produced without any tradeoffs in functionality or price with these modules.

Very Low Profile form factor DIMMS were developed with the arrival of blade servers. Due to having limited space, standard height modules were unable to fit in the enclosures. Improved airflow, reduced thermal impact, and lowered power costs are all advantages when selecting VLP DIMMs. All modules are quality tested in house and are built to JEDEC standard specifications with high quality components. DDR4 offers modules up to double the density and speed of previous generations DDR3 DRAM while using up to 20% less power which makes it a highly efficient solution for enterprise workloads.

We are bang in the middle of an inflection point where the latest generation of CPUs, GPUs, motherboards, memory, displays, and software (Windows 10) just launched. To help our readers wanting to save big on their first gaming PC builds [and because the news is slow these days], TechPowerUp brings to you its Builder's Digest series of guides, on which components we would choose, to build a gaming or media PC from the ground up, at a given price-point.

In this episode, we're trying to build the best gaming PC possible, under $1,700. Our definition of "best" includes not just performance, but also energy-efficiency and noise. $1,700 is a great budget to get building your first serious gaming PC from scratch. Your only semblance of a PC right now is probably a notebook you take to school, and so you need to buy everything that makes up a desktop. Here's how TechPowerUp will spend that money.

Innodisk, the service-driven flash and DRAM provider, announces higher capacity 16GB versions of its DDR4 embedded and server unbuffered DRAM series. These 2133MHz UDIMMs and SODIMMS now come in industry-leading 16GB capacities, allowing more memory to be installed within space constrained embedded systems, industrial PCs and servers. Offering higher performance with lower power consumption compared to DDR3, the new DRAM modules have ECC available for reliability, as well as industrial strength features from Innodisk such as 30µ" Gold Finger connectors, thermal sensors, and protective conformal coatings. The new 16GB modules make Innodisk's range of DDR4 products the most complete line of embedded and server DDR4 memory on the market.

"16GB is the highest capacity unbuffered DDR4 module available on the market," said Samson Chang, Vice President of Embedded DRAM Business Unit of Innodisk. "We're proud that Innodisk is able to provide this memory capacity while bringing the performance and low power benefits of DDR4 to the embedded and server markets. In addition, we're bringing extra value to our industrial customers with Innodisk features like onboard thermal sensors and protective coatings.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced that its JC-64.8 Subcommittee for Solid State Drives is currently engaged in an effort to update the JESD218 standard for Solid State Drive Requirements and Endurance Test Method. Originally published in September 2010 and revised in February 2011, the new update to JESD218 will primarily address improvements in test methodologies to better reflect product expectations, reduce testing options to remove unused methods, and add clarifications to improve the readability and understanding of test methods and artifacts caused by accelerated testing. Additional topics are discussed when brought up by task group participants. JEDEC strongly encourages all interested parties to contact the JEDEC office at 703-907-7560 to become involved with SSD standards development.

JESD218 Solid-State Drive Requirements and Endurance Test Method defines the conditions of use and corresponding endurance verification requirements for both Client and Enterprise application classes, as well as providing a standard endurance rating. Workloads are described in a separate, related document: JESD219 Solid-State Drive Endurance Workloads. Both JESD218 and JESD219 are available for free download from the JEDEC website.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, has announced that its JC-45 Committee has approved the first standards for support of "hybrid" DDR4 memory modules which are defined as modules that plug into standard dual in-line memory module (DIMM) sockets and appear like a DDR4 SDRAM to the system controller, yet contain non-volatile (NV) memories such as NAND Flash on the module. These hybrid module families are referred to as Non-Volatile DIMMs, or NVDIMMs, and they may share the memory channel with other standard DDR4 DIMMs. Publication is expected later this year.

"The introduction of hybrid memory modules into system platform architectures adds new levels of functionality to the computer memory hierarchy," said Mian Quddus, Chairman of JEDEC's JC-45 Committee for Dynamic Random Access Memory (DRAM) Modules. He added, "Non-volatile memory may be used for data persistence, mass storage, and the door is now opened for innovative new applications using the high speed of the DRAM channel. NAND Flash is the first non-volatile memory to be incorporated into the channel; however, the industry is poised for other memory types to be included as well. The framework established by JEDEC is flexible enough to allow for a variety of memories to be included under the 'hybrid' umbrella."

Back in 2008, when it looked like NVIDIA owned the GPU market, and AMD seemed lagging behind on the performance and efficiency game, the company sprung a surprise. The company's RV770 silicon, the first GPU to implement GDDR5 memory, trounced NVIDIA's big and inefficient GeForce GTX 200 series, and threw AMD back in the game. GDDR5 helped the company double the memory bandwidth, with lower pin- and memory-chip counts, letting the company and its partners build graphics cards with fewer components, and earn great margins, which the company invested in development of its even better HD 5000 series, that pushed NVIDIA with its comical GeForce GTX 480, to hit its lowest ever in market-share. Could AMD be looking at a similar turnaround this summer?

Since the introduction of its Graphics CoreNext architecture in 2012, AMD has been rather laxed in its product development cycle. The company has come out with a new high-end silicon every 18-24 months, and adopted a strategy of cascading re-branding. The introduction of each new high-end silicon would relegate the existing high-end silicon to the performance segment re-branded, and the existing performance-segment silicon to mid-range, re-branded. While the company could lay out its upcoming Radeon R9 series much in the same way, with the introduction of essentially just one new silicon, "Fiji," it could just prove enough for the company. Much like RV770, "Fiji" is about to bring something that could prove to be a very big feature to the consumer graphics market, stacked high-bandwidth memory (HBM).