Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry's first two gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology.

"We see market adoption to DDR3 picking up steam and are accommodating that with early entry of 2Gb DDR3 using the most efficient DRAM manufacturing technology available today," said Jim Elliott, Vice President, Memory Marketing, Samsung Semiconductor, Inc. "This will set the pace for a new standard in premium, eco-friendly DRAM solutions offering the most advanced, low power RDIMM for servers anywhere."

Patriot Memory, a global pioneer in high performance memory, NAND flash and computer technology, today announced their XMP certified SODIMMS.

Patriot's DDR3 SODIMM is the latest in the family of memory which includes Intel's Extreme Memory Profiles (XMP). XMP is a performance specification for DDR3 memory SPD settings that act as an integrated "plug and play" overclocking tool. The new Extreme Memory Profile options allow the end user to select extreme or ultimate performance through a framework of predefined and validated optimizations of individual settings without the hassle of manually adjusting each parameter, so the timings, voltage, and speed boot automatically for maximum performance. This enables a robust, profile based, high performance DDR3 over-clocking solution for Intel platforms targeted for enthusiasts, gamers and overclockers.

Patriot Memory, a global pioneer in high performance memory, NAND flash and computer technology, today announced their DDR2 4GB and 8GB SODIMM mobile solutions to answer the need of extreme mobile computing.

"The performance gap between mobile and desktop computing has reduced significantly over the recent introduction of more powerful mobile platforms," commented Les Henry, Director of Engineering at Patriot, "By adding Patriot's DDR2 4GB module or 8GB in dual channel mode, mobile systems can eliminate that gap and perform like a true desktop replacement."

OCZ Technology Group, a worldwide leader in innovative, ultra-high performance and high reliability memory, is pleased to be one of the first to offer Intel Extreme SODIMM modules to the enthusiast market. These memory solutions implement a high-performance specification optimized and predefined for platforms utilizing Intel Core 2 Extreme mobile processors. Extending beyond a traditional capacity upgrade for high-end gaming and professional laptops, OCZ's XMP SODIMMs offer superior performance qualified by Intel for ultimate compatibility and stability.

OCZ Technology Group, Inc., a worldwide leader in innovative, ultra-high performance and high reliability memory and computer components, today unveiled OCZ Vertex Mac Edition Solid State Drives and mobile memory solutions qualified by OCZ for ultimate compatibility with the latest family of MacBooks. These new premium offerings are designed for Mac enthusiasts demanding the latest technology in storage and memory to increase productivity and performance on their Apple notebooks.

"OCZ is excited to announce two new products that are specifically designed for Mac consumers," commented Ryan Edwards, Director of Product Management at the OCZ Technology Group. "Both the Vertex Series Mac Edition solid state drives and the new Mac Edition SODIMMS are designed to be an easy upgrade for consumers that want to boost the performance of their MacBooks, and have been tested in Apple's Development Center (ADC) to ensure stability and compatibility."

Samsung Electronics announced today that it has developed and validated the first 40-nanometer (nm) class DRAM chip and module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte 800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory module) - both to be processed at 40-nm - have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.
"Securing extremely advanced technology and system/platform validated operability underscores our commitment as technology leader to deploying the most efficient means of producing DRAM in the marketplace," said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has made a significant advancement in the push for higher volume memory chips by developing the world's first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology.

With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 has become critical in reducing data center costs, improving server time management and increasing overall efficiency.

OCZ Technology Group, a worldwide leader in innovative, ultra-high performance and high reliability memory, today announced the all-new DDR3 SODIMM modules as its next generation notebook memory to support the impending Intel Centrino 2 mobile platform. These latest memory offerings for notebooks help reduce power consumption and increase speed and bandwidth, resulting in a higher performing laptop. As next-generation laptops are introduced in the upcoming weeks, OCZ is prepared to deliver high-performance DDR3 for these advanced gaming and professional systems.

OCZ Technology Group today announced the availability of its PC2-5400 SODIMM series in new 3GB optimized kits, allowing consumers to purchase upgrade RAM in the densities that fit their specific system needs. This addition to the DDR2 memory line offers consumers another option to incorporate high-quality hardware to promote extra performance on their mobile gaming station or portable office workstation.

Lexar Media is now the first global memory provider to announce the immediate availability of Crucial DDR3-1066 (PC3-8500) 204-pin SODIMM memory modules. Crucial PC3-8500 SODIMM modules support module bandwidths up to 10.6 GB/s with a data rate of 2,133 MT/s at a respective clock frequency of 1066MHz - effectively doubling the data rate of DDR2 1066MHz memory. In addition, DDR3 supply voltage is 1.5V compared to DDR2's 1.8V, reducing power consumption by up to 30 percent and also generating less heat. The DDR3 modules are able to obtain these advantages by utilizing improved package, pin-outs, and signaling on the components, as well as an improved overall module design. The Crucial SODIMMs are available in 1GB and 2GB densities plus they come with a lifetime warranty.

Micron Technology today announced that it is sampling 4GB DDR3 modules, designed using 2Gb components, to provide the industry's highest density DDR3 modules for notebook computers. High-density memory modules are becoming increasingly important for notebook computers as graphic-intensive operating systems and other content heavy applications continue to make their way onto the market. The fast speeds, high-density and low-power of Micron's portfolio of DDR3 modules - ranging in density from 512MBs to now 4 GBs - allow these systems and applications to perform more effectively and utilize power more efficiently.

OCZ Technology Group today released PC2-6400 2GB SODIMM modules, a high-speed addition to their line of premium laptop upgrade memory. These performance memory modules are built to handle the powerful processors and other high-end components of enthusiast and professional notebooks, as well as mainstream consumers looking to add value and performance to their systems.

OCZ Technology Group, today released PC2-5400 2GB SODIMM modules, an addition to their line of premium upgrade laptop memory. Specially targeted at the notebook PCs running Windows Vista, these modules are priced aggressively and offer exceptional quality for its price. The latest line of OCZ SODIMMs will be available in 2GB modules rated to run 667MHz at CL5-5-5-15 with 1.8V default operational voltage. Each module comes backed with industry leading technical support and the OCZ Lifetime Warranty. For more information on the DDR2 PC2-5400 SODIMM, please click here.