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Sabrent Rocket 2 TB (Phison E12S + Kioxia BiCS4)

2 TB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Sabrent Rocket is a solid-state drive in the M.2 2280 form factor, launched in 2020. It is available in capacities ranging from 2 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Sabrent Rocket interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Sabrent has installed 96-layer TLC NAND flash on the Rocket, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The Rocket is rated for sequential read speeds of up to 3,450 MB/s and 2,750 MB/s write; random IOPS reach up to 490K for reads and 510K for writes.
At its launch, the SSD was priced at 280 USD. The warranty length is set to five years, which is an excellent warranty period. Sabrent guarantees an endurance rating of 3470 TBW, a good value.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 2 TB 4 TB
Hardware Versions:
  • Phison E12S + Kioxia BiCS4
    2 TB 4 TB
  • Phison E12S + Micron B27A
    1 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: 2020
Price at Launch: 280 USD
Part Number: SB-ROCKET-2TB
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ 2 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: Nanya NT5CC256M16EB-JK
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,450 MB/s
Sequential Write: 2,750 MB/s
Random Read: 490,000 IOPS
Random Write: 510,000 IOPS
Endurance: 3470 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.9
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 13:21 EDT change timezone

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