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Silicon Power XD80 2 TB

2 TB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
PCB Front
PCB Front
PCB Back
PCB Back
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Silicon Power XD80 is a solid-state drive in the M.2 2280 form factor, launched on March 12th, 2021. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Silicon Power XD80 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Silicon Power has installed 96-layer TLC NAND flash on the XD80, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 52 GB, once it is full, writes complete at 1150 MB/s. The XD80 is rated for sequential read speeds of up to 3,400 MB/s and 3,000 MB/s write; random IO reaches 500K IOPS for read and 600K for writes.
At its launch, the SSD was priced at 220 USD. The warranty length is set to five years, which is an excellent warranty period. Silicon Power guarantees an endurance rating of 1600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 256 GB 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Mar 12th, 2021
Price at Launch: 220 USD
Part Number: SP002TBP34XD8005
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.47 W (Idle)
3.9 W (Avg)
5.8 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TABHG65AWV
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: Xi'an UnilC Semi SCB13H4G160AF-11M
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,000 MB/s
Random Read: 500,000 IOPS
Random Write: 600,000 IOPS
Endurance: 1600 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 52 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1150 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

There is a variant with YMTC's 64-Layers Dies

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 12:15 EDT change timezone

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