OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) for computing devices and systems, today announced the release of the Vertex 450 SATA III SSD Series featuring the company's proprietary Indilinx Barefoot 3 M10 Series controller. As part of the leading-edge Vertex series, Vertex 450 lives up to its name and bridges the gap between high performance and mainstream solid-state storage. With advanced storage performance, reliability, and quality, the Vertex 450 utilizes 20 nm process geometry NAND flash to meet the needs of today's high-end consumer and client applications.

"As one of the industry's most highly awarded SSD Series to date, the Vertex name has become synonymous with the latest and greatest in flash-based storage providing an exceptional balance of performance and cost efficiency," said Daryl Lang, Senior Vice President of Product Management for OCZ Technology. "The Vertex 450 marks the first time this popular OCZ series utilizes in-house ASIC technology delivering an even greater level of speed, reliability and value for our customers."

GPU buyers can breathe a huge sigh of relief that AMD isn't fixated with next-generation game consoles, and that its late-2013 launch of its next GPU generation is with good reason. The company is building a new GPU micro-architecture from the ground up. Codenamed "Volcanic Islands," with members codenamed after famous islands along the Pacific Ring of Fire, the new GPU family sees AMD rearranging component-hierarchy within the GPU, in a big way.

Over the past three GPU generations that used VLIW5, VLIW4, and Graphics CoreNext SIMD architectures, the component hierarchy was essentially untouched. According to an early block-diagram of one of the GPUs in the series, codenamed "Hawaii," AMD will designate parallel and serial computing units. Serial cores based on either of the two architectures AMD is licensed to use (x86 and ARM), could handle part of the graphics processing load. The stream processors of today make up the GPU's parallel processing machinery.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs).

"By introducing next-generation memory storage products like the 128Gb NAND chip, Samsung is extremely well situated to meet growing global customer needs," said Young-Hyun Jun, executive vice president, memory sales & marketing, Device Solutions Division, Samsung Electronics. "The new chip is a critical product in the evolution of NAND flash, one whose timely production will enable us to increase our competitiveness in the high density memory storage market."

OCZ is reportedly readying the 5th generation of its Vertex line of high-performance consumer SSDs. Vertex 5, as it's being called, could retake market positioning of being the company's flagship product, from its Vector series. The new lineup, which could consist of 128 GB, 256 GB, and 512 GB models, could be launched towards the end of May, 2013.

OCZ could use Vertex 5 to strengthen its lineup against Samsung, which appears to have captured the performance segment with its 840 and 840 Pro series, using aggressive pricing, particularly with 840 (non-Pro). Vertex 5 could be based on the same Barefoot 3 platform as Vector, with a few tweaks. It could integrate 20 nm MLC NAND flash. With the company engaged in legal tussles with some of its former investors, it could be interesting to see how the company competes with Samsung's pricing.

Crucial started shipping its M500 line of consumer SSDs. Available in 2.5-inch SATA (7 mm-thick), mSATA, and NGFF M.2 form-factors, the drives combine Micron 20 nm MLC NAND flash with a Marvell-made processor. All three form-factors take advantage of 6 Gb/s SATA. The drive is available in 120 GB, 240 GB, and 480 GB capacities for all three form-factors, while the 2.5-inch gets a 960 GB "terabyte-class" capacity option, as well.

Sequential read speeds on all capacities are as high as 500 MB/s, while sequential write speeds cap out at 130 MB/s and 250 MB/s for the 120 GB and 240 GB variants, respectively; and reach 400 MB/s on the 480 GB and 960 GB variants. The drives are backed by 3-year limited warranties, 1.2 million hours MTBF, and 72 TB total bytes written (TBW) write endurance (that's 40 GB per day). TRIM, NCQ, and SMART are standard issue. The 120 GB, 240 GB, 480 GB, and 960 GB variants are priced at US $129.99, $219.99, $399.99, and $599.99, respectively.

OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) for computing devices and systems, today announced a new 20 nanometer (nm) NAND flash version of its award-winning Vertex 3 SSD Series. The new Vertex 3.20 SSD is a 2.5-inch, 6 Gbps SATA III-based Multi-Level Cell (MLC) drive that implements the feature-set of the Vertex 3 Series but is built around smaller, state-of-the-art NAND flash process geometry.

Being that the Vertex 3 Series is one of OCZ's most popular SSDs to date, and has received numerous accolades from media reviewers globally, the implementation of 20 nm NAND flash will extend its availability and enable mainstream users of mobile and desktop platforms to improve gaming, multimedia, and the overall computing experience over traditional hard disk drives (HDDs) and other competing SSDs. The Vertex 3.20 SSD will be available in 120 GB and 240 GB storage capacities, with 480 GB capacities to follow soon.

Intel made an addition to its SSD 335 line of performance-segment consumer SSDs, which is currently available in just one capacity, 240 GB. The new 180 GB variant (SKU: SSDSC2CT180A4K5) retains the feature-set and rated speeds of its older sibling, boasting of up to 500 MB/s reads, up to 450 MB/s writes, and up to 52,000 IOPS 4K random write throughput. Based on the LSI-SandForce SF-2281 processor, the drive features 20 nm MLC NAND flash chips by IMFlash Technologies (Intel, Micron JV).

In addition, Intel updated the drive body design, which will also apply to newer batches of the 240 GB variant. The new design consists of a brace running the perimeter of the drive (without affecting its 2.5-inch 9 mm-thick size compliance), and a "circuit board" print art. Backed by a 3-year warranty, the Intel SSD 335 180 GB is priced at US $179.99.

Synopsys, Inc., a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced the delivery of lithography compliance checking technology for the TSMC 20-nanometer (nm) DFM Data Kit (DDK) encapsulated with Synopsys Proteus mask synthesis technologies. As a result of the design-for-manufacturing collaboration between TSMC and Synopsys, the compliance checking engine in the DDK helps designers identify lithography-related problems early in the design development phase, avoid litho-related manufacturing issues and late-stage schedule slips resulting from re-design.

The TSMC 20-nm DDK complements traditional physical verification rules with a highly accurate simulation-based solution to identify design non-compliance using a direct simulation of the manufacturing process. Lithography correction and verification tools used in the manufacturing mask synthesis flow are embedded in the DDK, resulting in accurate hotspot detection to avoid litho-related manufacturing issues.

Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, today announced its fourth generation green memory solution at the annual Memory Solution CIO Forum at the Shilla hotel, Seoul, Korea. Designed to achieve superior system level performances, the new solution introduces a combination of its advanced 20 nanometer (nm) class DDR3 and 20 nm-class SSDs based on high-performance SATA 6.0 Gb/s and SAS interfaces respectively.

The new green memory solution addresses the benefits of green memory for next-generation enterprise servers, server storage solutions and personal computing solutions, broadening the benefits of green memory solutions even further throughout the IT industry. The reduced costs and optimized IT expenditure efficiencies are well in-line with the creating shared value (CSV) framework.

Intel Corporation announced today it is shipping its first solid-state drive (SSD) using industry leading 20-nanometer (nm) NAND flash memory process.

The new Intel Solid-State Drive 335 Series (Intel SSD 335 Series) uses the smallest, most efficient multi-level cell NAND flash on the market, allowing Intel to advance its 300 Series client/consumer SSDs to the next-generation technology. SSDs offer users an overall PC performance boost accelerating productivity applications and other computing activities, such as Web surfing, movie watching, video chatting and content creation.

Korean DRAM makers Samsung and SK Hynix have each stepped up efforts to scale up production on the new 20 nanometer silicon fabrication process, to make in the mainstream DRAM manufacturing process in 2013. The two have already begun volume production of DRAM on the 20 nm process in 2012, however, 30 nm remains as the mainstream DRAM production process. By 2H-2012, the 20 nm process could take its place. The two companies will gradually shift their focus from PC DRAM to enterprise and mobile DRAM, as PC DRAM continues to reel with oversupply.

The 330 Series solid state drives are already old news for Intel as the Santa Clara-based company has already begun to roll out the 335 Series drives. The first 335 model, codenamed SSDSC2CT240A4K5, just went on sale in Japan and it features a 240 GB capacity, a 2.5-inch form factor (9.5 mm thickness), a SATA 6.0 Gbps interface, a SandForce SF-2281 controller, and 20 nm MLC (multi-level cell) NAND Flash memory.

Intel's 335 Series SSD delivers read/write speeds of up to 500/450 MB/s, is backed by a three-year warranty, and costs ¥16,980 (about $214). 80 GB and 180 GB models are expected to arrive in Q1 2013.

Cadence Design Systems, Inc., a leader in global electronic design innovation, announced today that TSMC has selected Cadence solutions for its 20-nanometer design infrastructure. The solutions cover the Virtuoso custom/analog and Encounter RTL-to-signoff platforms.

The TSMC 20-nanometer reference flows incorporate new features and methodologies in both Encounter and Virtuoso that take into account newly important wire characteristics, timing closure and design size considerations.

ADATA announced a new line of affordable client SSDs, the Premier Pro SP600 series. Built in the 9.5 mm-thick 2.5-inch form-factor, the drives take advantage of SATA 6 Gb/s interface. Available in 32 GB, 64 GB, and 128 GB capacities, the Premier Pro SP600 series is driven by JMicron JMF661 processor, and features 20 nm-class MLC NAND flash memory. The drives offer sequential read speeds of up to 360 MB/s, and up to 130 MB/s writes. Random access performance numbers provided to us include 40,000 IOPS 4K random reads, and 30,000 IOPS 4K random writes. The drives pack most common client SSD features, including TRIM, NCQ, and 40 b/KB ECC. The 32 GB, 64 GB, and 128 GB variants are priced at US $49.99, $69.99, and $99.99, respectively.

Synopsys, Inc., a global leader accelerating innovation in the design, verification and manufacture of chips and systems, today announced 20-nanometer (nm) process technology support for the TSMC 20 nm Reference flow. This includes Synopsys Galaxy Implementation Platform support for the latest TSMC 20 nm design rules and models. The collaboration between TSMC and Synopsys on 20nm technology allows designers to gain performance, power efficiency and chip density advantages while achieving predictable design closure with the industry-proven Synopsys RTL to GDSII solution.

TSMC's 20 nm Reference Flow addresses 20 nm design challenges with a transparent double patterning aware design flow enabling double patterning technology (DPT) compliance, pre-coloring capability, new RC extraction methodology, DPT sign-off, and integrated design-for-manufacturing (DFM). The new Reference Flow's transparent DPT enablement reduces DPT design complexity, achieves required accuracy, minimizes 20 nm design flow setup and learning curve, and accelerates 20 nm process adoption.

TSMC announced today that the readiness of 20 nm and CoWoS design support within the Open Innovation Platform (OIP) is demonstrated by the delivery of two foundry-first reference flows supporting 20 nm and CoWoS (Chip on Wafer on Substrate) technologies.

TSMC's 20 nm Reference Flow enables double patterning technology (DPT) design using proven design flows. Leading EDA vendors' tools are qualified to work with TSMC 20 nm process technology by incorporating DPT aware place and route, timing, physical verification and design for manufacturing (DFM). The new silicon-validated CoWoS Reference Flow that enables multi-die integration to support high bandwidth, low power can achieve fast time-to- market for 3D IC designs. The CoWoS flow also benefits designers by allowing them to use existing, mainstream tools from leading EDA vendors.

GLOBALFOUNDRIES and ARM today announced a multi-year agreement to jointly deliver optimized system-on-chip (SoC) solutions for ARM processor designs on GLOBALFOUNDRIES' 20-nanometer (nm) and FinFET process technologies. The new agreement also extends the long-standing collaboration to include graphics processors, which are becoming an increasingly critical component in mobile devices. As part of the agreement, ARM will develop a full platform of ARM Artisan Physical IP, including standard cell libraries, memory compilers and POP IP solutions. The results will help enable a new level of system performance and power-efficiency for a range of mobile applications, from smartphones to tablets to ultra-thin notebooks.

The companies have been collaborating for several years to jointly optimize ARM Cortex-A series processors, including multiple demonstrations of performance and power-efficiency benefits on 28nm as well as a 20nm test-chip implementation currently running through GLOBALFOUNDRIES fab in Malta, N.Y. This agreement extends the prior efforts by driving production IP platforms that will enable customer designs on 20nm and promote rapid migration to three-dimensional FinFET transistor technology. This joint development will enable a faster time to delivering SoC solutions for customers using next-generation ARM CPUs and GPUs in mobile devices.

TSMC, which is currently able to meet less than 70 percent of orders placed by Qualcomm, NVIDIA, AMD, TI, and Broadcom, for 28 nm chip manufacturing, is planning an early investment into its succeeding 20 nm manufacturing process that will ensure it has a new process ready well in advance (of its 2013 target), so it could seek orders in advance, and attain high volume capacity by 2013. Industry sources say TSMC has a good chance of landing orders for CPUs by Apple, in 2014. Apple's current-generation A5X chip is built on the 40 nm process, by Samsung. TSMC has revealed plans to invest about US$700 million in building a 20nm R&D line in 2012 - instead of its originally-planned 2013.

NVIDIA is formulating a long-term chip manufacturing strategy that will see its interests secure by the time chip manufacturing has moved on to 14 nm (which follows 20 nm and today's 28 nm), which could arrive around 2015. Chip manufacturing by foundry partners is a potentially major irritant for NVIDIA, which wants to see wafer sizes getting increased from the current 300 mm manufacturing at TSMC, to 450 mm, and fast. TSMC will achieve 450 mm (18-inch) wafer manufacturing capability only by 2015. Another irritant for NVIDIA is TSMC's change in business model, which charges fabless customers "per wafer manufactured", rather than "per working chip yielded", giving them what they perceive to be the shorter end of the stick. NVIDIA is thus rigorously evaluating other foundry partners. We know from a slightly older report that Samsung has sent NVIDIA test chips manufactured at its Austin, Texas facility. There is talk that NVIDIA could also seek partnerships with GlobalFoundries, of which AMD recently relinquished all its stakes on. NVIDIA needs reliable, high-volume foundry partners that can keep it competitive not just with its main business of GPUs, but also a potential gold mine that is application processors.

UBM TechInsights, the leader in technology and IP consulting, is pleased to recognize Intel - Micron for their collaboration on the Intel-Micron Flash Technologies (IMFT) 20 nm MLC NAND Flash and award them with the Insight Award for the 2011 Semiconductor of the Year.

UBM TechInsights' circuit analysis verified that Intel - Micron's latest Flash component was the first to be manufactured at the 20 nm process node. By using high-k dielectric to replace the silicon dioxide, that is traditionally used, Intel-Micron managed to reduce leakage while keeping power consumption low - a must for today's light weight portable electronics.

After asking around Taiwan, Digitimes has apparently found out Intel's SSD intentions for the rest of this year. As soon as May the Santa Clara-based chip giant is said to bring out the 300 Series ' Maple Crest' drives, as well as the 720 Series (Ramsdale). The 300s are consumer-grade solutions, while the 720s target enterprises and feature a PCIe interface.

The 720 Series SSDs will come in 400 GB and 800 GB capacities and, like the 300 Series, will utilize 25 nm MLC (multi-level cell) NAND Flash memory.

In Q3 Intel is set to be making the transition to 20 nm NAND and will release the 500 Series 'King Crest' models, while later on, in Q4 we should see the arrival of the 100 GB, 200 GB, 400 GB and 800 GB Taylorsville drives part of the 700 Series, and the Jay Crest and Oak Crest SSDs bearing the 300 Series banner.

In case Elpida is unable to repay its debts due in April and goes insolvent, marking its exit from the DRAM industry, the consequences for not just the DRAM industry, but also the PC industry as a whole, will be huge, note industry observers. On the 15th, Eplida released a statement on the assumed going concern in the company with regards to its debt situation. The company has been unable to recover from its condition despite injections of capital backed by no less than the Japanese government.

Elpida has to repay nearly 40 billion JPY US ($505.8 million) to the government, and another 80 billion JPY (US $1.02 billion) in short-term bank loans. Frantic negotiates are on between the company and its long list of creditors that include the Japanese government and other banks to seek an interim relief from the default, even as the company searches for a cash-source that would alleviate the situation and make it survive. Elpida's situation is different from that of Qimonda, it's larger, has more technologies in the pipeline, and has recently set up 30 nm-class mass-production and is testing 20 nm-class production. In other words, it has much greater potential as a company that contributes to the industry, if it survives. Its exit will leave the industry imbalanced, and dominated by Korean DRAM makers such as Samsung and Hynix, and American Micron Technology, a step closer to oligarchical price-controls, observers note.

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, announced today that it started producing embedded multi-chip package (eMCP) memory for use in the rapidly expanding market segment for entry- to mid-level smartphones. Samsung's new eMCP solutions come in a wide range of densities, utilizing LPDDR2 (low power double-data-rate 2) DRAM made with 30 nanometer (nm) class process technology and NAND flash memory using 20 nm-class technology.

Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).

The growth in data storage combined with feature enhancements for tablets and smartphones is creating new demands for NAND flash technology, especially greater capacity in smaller designs. The new 20nm 8GB device measures just 118mm² and enables a 30 to 40 percent reduction in board space (depending on package type) compared to the companies' existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.