While Intel's primary product focus is on the processors, or brains, that make computers work, system memory (that's DRAM) is a critical component for performance. This is especially true in servers, where the multiplication of processing cores has outpaced the rise in memory bandwidth (in other words, the memory bandwidth available per core has fallen). In heavy-duty computing jobs like weather modeling, computational fluid dynamics and certain types of AI, this mismatch could create a bottleneck—until now.

After several years of development with industry partners, Intel engineers have found a path to open that bottleneck, crafting a novel solution that has created the fastest system memory ever and is set to become a new open industry standard. The recently introduced Intel Xeon 6 data center processors are the first to benefit from this new memory, called MRDIMMs, for higher performance—in the most plug-and-play manner imaginable.

Kioxia Corporation, a world leader in memory solutions, today announced that it has been adopted by Japan's national research and development agency, New Energy and Industrial Technology Development Organization (NEDO), for its groundbreaking proposal on the Development of Manufacturing Technology for Innovative Memory to enhance the post-5G information and communication system infrastructure.

In the post-5G information and communication era, AI is estimated to generate an unprecedented volume of data. This surge will likely escalate the data processing demands of data centers and increase power consumption. To address this, it is crucial that the next-generation memories facilitate rapid data transfer with high-performance processors while increasing capacity and reducing power consumption.

Innodisk, a leading global AI solution provider, announces its DDR5 6400 DRAM series, featuring the industry's largest 64 GB single-module capacity. This 6400 series is purpose-built for data-intensive applications in AI, telehealth, and edge computing, where high performance at the edge is crucial. Available in versatile form factors, including CUDIMM, CSODIMM, and RDIMM, the series delivers unmatched speed, stability, and capacity to meet the rigorous demands of modern edge AI and industrial applications.

The DDR5 6400 series delivers a data transfer rate of 6400 MT/s, offering a 14% boost in speed over previous generations and doubling the maximum capacity to 64 GB. These enhancements make it an optimal choice for applications like Large Language Models (LLMs), generative AI, autonomous vehicles, and mixed reality, which require high-speed, reliable data processing in real time.

TrendForce reports that the focus on HBM products in the DRAM industry is increasingly turning attention toward advanced packaging technologies like hybrid bonding. Major HBM manufacturers are considering whether to adopt hybrid bonding for HBM4 16hi stack products but have confirmed plans to implement this technology in the HBM5 20hi stack generation.

Hybrid bonding offers several advantages when compared to the more widely used micro-bumping. Since it does not require bumps, it allows for more stacked layers and can accommodate thicker chips that help address warpage. Hybrid-bonded chips also benefit from faster data transmission and improved heat dissipation.

Samsung is currently mass-producing its 9th generation V-NAND flash memory chips with 286 layers unveiled this April. According to the Korean Economic Daily, the company targets V-NAND memory chips with at least 400 stacked layers by 2026. In 2013, Samsung became the first company to introduce V-NAND chips with vertically stacked memory cells to maximize capacity. However, stacking beyond 300 levels proved to be a real challenge with the memory chips getting frequently damaged. To address this problem, Samsung is reportedly developing an improved 10th-generation V-NAND that is going to use the Bonding Vertical (BV) NAND technology. The idea is to manufacture the storage and peripheral circuits on separate layers before bonding them vertically. This is a major shift from the current Co-Packaged (CoP) technology. Samsung stated that the new method will increase the density of bits per unit area by 1.6 times (60%), thus leading to increased data speeds.

Samsung's roadmap is truly ambitious, with plans to launch the 11th generation of NAND in 2027 with an estimated 50% improvement in I/O rates, followed by 1,000-layer NAND chips by 2030. Its competitor, SK hynix, is also working on 400-layer NAND aiming to have the technology ready for mass production by the end of 2025, as we previously mentioned in August. Samsung, the current HBM market leader with a 36.9% market share have also plans for its DRAM sector intending to introduce the sixth-generation 10 nm DRAM, or 1c DRAM by the first half of 2025. Then we can expect to see Samsung's seventh-generation 1d nm (still on 10 nm) in 2026, and by 2027 the company hopes to release its first generation sub-10 nm DRAM, or 0a DRAM memory that will use a Vertical Channel Transistor (VCT) 3D structure similar to what NAND flash utilizes.

ASUS Republic of Gamers (ROG) today announced that new ROG Maximus Z890 Apex motherboards have been used to achieve 5 world records, 19 global first-place records and 31 first-place records. In the hands of some of the world's premier professional overclockers, the Maximus Z890 Apex has coaxed dazzling performance out of the latest Intel Core Ultra processor (Series 2) lineup and the latest high-performance memory kits.

Veterans of the overclocking scene will not be surprised to learn that these records were achieved with an Apex motherboard on the bench. This series has an undeniable pedigree. Since the very first model, ASUS has designed Apex motherboards for the singular purpose of helping the world's most talented overclockers shatter barriers on their way to new records.

Kingston Technology Company, Inc., a world leader in memory products, announced the upcoming release of Kingston FURY Renegade DDR5 CUDIMMs, compatible with Intel's new 800-series chipset (formerly codenamed Arrow Lake). Intel's 800-series chipset is the first platform to utilize Clock Drivers on CUDIMMs (Clocked Unbuffered Dual Inline Memory Modules). At 6400 MT/s DDR5, JEDEC mandates the inclusion of a Client Clock Driver (CKD) on UDIMMs and SODIMMs. This component buffers and redrives the clock signal from the processor, enhancing signal integrity to the module. To distinguish these advanced modules from standard DDR5 UDIMMs and SODIMMs, JEDEC has designated them as CUDIMMs and CSODIMMs, respectively.

Kingston FURY Renegade RGB and non-RGB CUDIMM modules start at an overclocked speed of 8400 MT/s and are available as 24 GB single modules and 48 GB dual channel kits. Since CUDIMMs and UDIMMs share the same 288-pin connector, Kingston FURY UDIMMs with XMP and EXPO profiles are also compatible with Intel 800-series motherboards. However, it's recommended to verify compatibility through the motherboard manufacturer's QVL (Qualified Vendor List) or by checking the Kingston Configurator for supported speeds and capacities.

SK hynix Inc. announced today that it recorded 17.5731 trillion won in revenues, 7.03 trillion won in operating profit (with an operating margin of 40%), and 5.7534 trillion won in net profit (with a net margin of 33%) in the third quarter this year. Quarterly revenues marked all-time high, exceeding the previous record of 16.4233 trillion won in the second quarter of this year by more than 1 trillion won. Operating profit and net profit also far exceeded the record of 6.4724 trillion won and 4.6922 trillion won in the third quarter of 2018 during the semiconductor super boom.

SK hynix emphasized that the demand for AI memory continued to be strong centered on data center customers, and the company marked its highest revenue since its foundation by expanding sales of premium products such as HBM and eSSD. In particular, HBM sales showed excellent growth, up more than 70% from the previous quarter and more than 330% from the same period last year.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced upcoming raw card designs currently in development in JEDEC's JC-45 Committee for DRAM Modules in collaboration with the JC-40 and JC-42 Committees. These raw card memory device standards are intended for use in client computing applications such as laptops and desktops and will be supported by related appendix specifications. The forthcoming raw cards will also complement two DDR5 Clock Driver standards published earlier this year: JESD323: DDR5 Clocked Unbuffered Dual Inline Memory Module (CUDIMM) Common Specification and JESD324: DDR5 Clocked Small Outline Dual Inline Memory Module (CSODIMM) Common Specification.

Integrating a Clock Driver (CKD) into a DDR5 DIMM provides numerous advantages, particularly in memory stability and performance, and enhances signal integrity and reliability at high speeds. By regenerating the clock signal locally on the DIMM, a CKD ensures stable operation even at elevated clock speeds. With a DDR5 CKD, DIMM data rates can be increased from 6400 Mbps to 7200 Mbps in the initial version of the standard, and targeting up to 9200 Mbps in future versions.

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today unveiled industry-first, complete memory interface chipsets for Gen 5 DDR5 RDIMMs and next-generation DDR5 Multiplexed Rank Dual Inline Memory Modules (MRDIMMs). These innovative new products for RDIMMs and MRDIMMs will seamlessly extend DDR5 performance with unparalleled bandwidth and memory capacity for compute-intensive data center and AI workloads.

"The voracious memory demands of AI and HPC require the relentless pursuit of higher performance through continued innovation and technology leadership," said Sean Fan, chief operating officer at Rambus. "With our 30-plus years of renowned high-speed signal integrity and memory system expertise, the Rambus Gen5 RCD, and next-generation MRCD, MDB, and PMIC will be critical enabling chips in future-generation servers leveraging DDR5 RDIMM 8000 and MRDIMM 12800."

Corsair announces broad compatibility across its extensive component ranges designed to realize the potential of the Intel Core Ultra series processors. Intel Core Ultra processors feature a new socket, LGA 1851, and Corsair is ready with a full lineup of compatible CPU coolers. All our CPU coolers compatible with the previous LGA1700 socket are compatible with the new LGA 1851 socket, from our A115 air cooler to our best-performance TITAN RX RGB series of AIO coolers. From our 120 mm single fan radiators to our class-leading 360 mm and 420 mm radiators, we have a solution for you no matter which Core Ultra processor you choose or what case you're using.

To unleash the performance of the new Core Ultra series processors, we have a wide range of DOMINATOR and VENGEANCE series DDR5 memory kits available. These cutting-edge kits are designed to deliver award-winning performance, with XMP certification providing easy overclocking and improved memory bandwidth. Whether you're a gamer, content creator, or professional, Corsair DDR5 memory is the premiere option for reliable high-speed DRAM. With speeds up to 8,200 MT/s and densities up to 128 GB per kit, you can choose from attractive and compact VENGEANCE modules to the aesthetically elite DOMINATOR TITANIUM with RGB lighting that can be controlled through our iCUE software.

TrendForce's latest findings reveal that weaker consumer demand has persisted through 3Q24, leaving AI servers as the primary driver of memory demand. This dynamic, combined with HBM production displacing conventional DRAM capacity, has led suppliers to maintain a firm stance on contract price hikes.

Smartphone brands continue to remain cautious despite some server OEMs continuing to show purchasing momentum. Consequently, TrendForce forecasts that Q4 memory prices will see a significant slowdown in growth, with conventional DRAM expected to increase by only 0-5%. However, benefiting from the rising share of HBM, the average price of overall DRAM is projected to rise 8-13%—a marked deceleration compared to the previous quarter.

Today, Micron updated its corporate logo with new symbolism. The redesign comes as Micron celebrates over four decades of technological advancement in the semiconductor industry. The new logo features a distinctive silicon color, paying homage to the wafers at the core of Micron's products. Its curved lettering represents the company's ability to stay ahead of industry trends and adapt to rapid technological changes. The design also incorporates vibrant gradient colors inspired by light reflections on wafers, which are the core of Mircorn's memory and storage products.

This rebranding effort coincides with Micron's expanding role in AI, where memory and storage innovations are increasingly crucial. The company has positioned itself beyond a commodity memory supplier, now offering leadership in solutions for AI data centers, high-performance computing, and AI-enabled devices. The company has come far from its original 64K DRAM in 1981 to HBM3E DRAM today. Micron offers different HBM memory products, graphics memory powering consumer GPUs, CXL memory modules, and DRAM components and modules.

Samsung Electronics is speeding up its work on 2 nm production facilities, industry sources say. The company has started to install advanced equipment at its "S3" foundry line in Hwaseong to set up a 2 nm production line. This line aims to produce 7,000 wafers each month by the first quarter of next year. Also, Samsung plans to create a 1.4 nm production line at its "S5" foundry in Pyeongtaek Plant 2 by the second quarter of next year. This line has a goal to make 2,000 to 3,000 wafers each month. By the end of next year, Samsung will change all the remaining 3 nm production lines at "S3" to 2 nm.

As we reported earlier, Samsung has pushed back the start date for its Tyler, Texas foundry. The plant set to open by late 2024, won't install equipment until after 2026. Also, Samsung has changed its plans for the Pyeongtaek Fab 4 foundry line. Because of lower demand, it will now make DRAM instead, moreover, at Pyeongtaek Fab 3, which has a 4 nm line, Samsung has cut back production. These changes are part of Samsung's plan to make 2 nm chips next year and 1.4 nm chips by 2027. The company wants to catch up with its rival TSMC, right now, Samsung has 11.5% of the global foundry market in Q2, while TSMC leads with 62.3%. An industry expert stressed how crucial this is saying, "With the delay in 3 nm Exynos production and other issues, getting the 2 nm process right could make or break Samsung Foundry". The struggle for Samsung is real, with the company's top management, led by DS Division Vice Chairman Jeon Young-hyun, having recently issued a public apology for the division's underwhelming performance.

Apacer is thrilled to unveil its latest advancements in data security, reliability, and integrity for casino gaming systems in the Global Gaming Expo at the Expo Hall, taking place from October 8th to 10th, 2024. We invite you to visit us at booth 5221 to explore our state-of-the-art SSD and DRAM solutions, meticulously designed to address the demanding needs of the gaming industry.

At G2E 2024, Apacer will highlight a range of innovative products tailored to the unique requirements of gaming applications:

Recent reports from South China Morning Post unveil developments in China's semiconductor industry, with significant progress in two critical areas: advanced memory chips and silicon photonics. These breakthroughs mark important steps in the country's pursuit of technological self-reliance amid global trade tensions. In Wuhan, a startup called Numemory has unveiled a new storage-class memory (SCM) chip. The "NM101" chip boasts an impressive 64 GB capacity, far surpassing the megabyte-range offerings currently dominating the market. This novel chip blends the strengths of traditional DRAM and NAND flash storage, delivering rapid, non-volatile, persistent memory ideal for server and data center applications. The NM101's design prioritizes high capacity, density, and bandwidth while maintaining low latency. These characteristics make it particularly well-suited for data centers and cloud computing infrastructures. Initial reports suggest that storage devices incorporating this SCM technology can write an entire 10 GB high-definition video file in a mere second.

Concurrently, another Wuhan-based institution, JFS Laboratory, has achieved a milestone in silicon photonics research. The state-backed facility successfully merged a laser light source with a silicon chip, a feat previously unrealized in China. This innovation in silicon photonics leverages light signals for data transmission, potentially circumventing the looming physical constraints of traditional electric signal-based chip designs. This accomplishment is viewed as addressing a crucial gap in China's optoelectronics capabilities, which used to lag behind Western chip designers and startups. Using silicon photonics, infrastructure scale-out can be sustained on a much larger scale without significant power consumption increase. While these developments represent significant progress, it's important to note that bridging the gap between laboratory breakthroughs and mass-produced, commercially viable products remains a substantial challenge. The path from research success to market dominance is often long and complex, requiring sustained investment and further technological refinement.

Micron Technology, Inc. today announced results for its fourth quarter and full year of fiscal 2024, which ended August 29, 2024.

Fiscal Q4 2024 highlights

• Revenue of $7.75 billion versus $6.81 billion for the prior quarter and $4.01 billion for the same period last year
• GAAP net income of $887 million, or $0.79 per diluted share
• Non-GAAP net income of $1.34 billion, or $1.18 per diluted share
• Operating cash flow of $3.41 billion versus $2.48 billion for the prior quarter and $249 million for the same period last year

Fiscal 2024 highlights

• Revenue of $25.11 billion versus $15.54 billion for the prior year
• GAAP net income of $778 million, or $0.70 per diluted share
• Non-GAAP net income of $1.47 billion, or $1.30 per diluted share
• Operating cash flow of $8.51 billion versus $1.56 billion for the prior year

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has begun mass producing PM9E1, a PCle 5.0 SSD with the industry's highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

"Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios."

Asgard joined the ranks of V-Color to unveil its first high-frequency DDR5 memory, the Thor DDR5-9600. V-Color recently launched its DDR5-9200 memory, and Asgard one-upped it with DDR5-9600. Both these are CUDIMMs—UDIMMs that feature a client clock driver (CKD) component. These modules feature the highest bins of DDR5-9600 chips from SK Hynix. The advertised speed of DDR5-9600 is achieved using timings of 44-56-56-136, and a scorching DRAM voltage of 1.50 V. The module includes an XMP 3.0 profile to enable these settings on an Intel platform. With a single-rank configuration and 24 GB module density, the dual-channel kit gives you 48 GB. Asgard revealed that it is working on a DDR5-10000 kit. The company didn't announce US availability.

SK hynix unveiled an enhanced Accelerator-in-Memory based Accelerator (AiMX) card at the AI Hardware & Edge AI Summit 2024 held September 9-12 in San Jose, California. Organized annually by Kisaco Research, the summit brings together representatives from the AI and machine learning ecosystem to share industry breakthroughs and developments. This year's event focused on exploring cost and energy efficiency across the entire technology stack. Marking its fourth appearance at the summit, SK hynix highlighted how its AiM products can boost AI performance across data centers and edge devices.

Booth Highlights: Meet the Upgraded AiMX
In the AI era, high-performance memory products are vital for the smooth operation of LLMs. However, as these LLMs are trained on increasingly larger datasets and continue to expand, there is a growing need for more efficient solutions. SK hynix addresses this demand with its PIM product AiMX, an AI accelerator card that combines multiple GDDR6-AiMs to provide high bandwidth and outstanding energy efficiency. At the AI Hardware & Edge AI Summit 2024, SK hynix presented its updated 32 GB AiMX prototype which offers double the capacity of the original card featured at last year's event. To highlight the new AiMX's advanced processing capabilities in a multi-batch environment, SK hynix held a demonstration of the prototype card with the Llama 3 70B model, an open source LLM. In particular, the demonstration underlined AiMX's ability to serve as a highly effective attention accelerator in data centers.

SK hynix Inc. announced today that it has developed PEB110 E1.S (PEB110), a high-performance solid-state drive (SSD) for data centers. With the advent of the AI era, customer demand for high-performance NAND solutions such as SSDs for data centers, as well as ultra-fast DRAM chips including high bandwidth memory (HBM), is growing. In line with this trend, the company has developed and introduced a new product with improved data processing speed and power efficiency by applying the fifth-generation (Gen 5) PCIe specifications.

SK hynix expects to meet diverse customer needs with a more robust SSD portfolio following successful mass production of PS1010 with the introduction of PEB110. The company is currently in the qualification process with a global data center customer and plans to begin mass production of the product in the second quarter of next year, pending qualification. PCle Gen 5, applied to the new product, provides twice the bandwidth of the fourth generation (Gen 4), enabling PEB110 to achieve data transfer rates of up to 32 gigatransfers per second (GT/s). This enables PEB110 to double the performance of the previous generation and improve power efficiency by more than 30%.

As AI workloads continue to evolve and expand, memory bandwidth and capacity are increasingly critical for system performance. The latest GPUs in the industry need the highest performance high bandwidth memory (HBM), significant memory capacity, as well as improved power efficiency. Micron is at the forefront of memory innovation to meet these needs and is now shipping production-capable HBM3E 12-high to key industry partners for qualification across the AI ecosystem.

Micron's industry-leading HBM3E 12-high 36 GB delivers significantly lower power consumption than our competitors' 8-high 24 GB offerings, despite having 50% more DRAM capacity in the package
Micron HBM3E 12-high boasts an impressive 36 GB capacity, a 50% increase over current HBM3E 8-high offerings, allowing larger AI models like Llama 2 with 70 billion parameters to run on a single processor. This capacity increase allows faster time to insight by avoiding CPU offload and GPU-GPU communication delays. Micron HBM3E 12-high 36 GB delivers significantly lower power consumption than the competitors' HBM3E 8-high 24 GB solutions. Micron HBM3E 12-high 36 GB offers more than 1.2 terabytes per second (TB/s) of memory bandwidth at a pin speed greater than 9.2 gigabits per second (Gb/s). These combined advantages of Micron HBM3E offer maximum throughput with the lowest power consumption can ensure optimal outcomes for power-hungry data centers. Additionally, Micron HBM3E 12-high incorporates fully programmable MBIST that can run system representative traffic at full spec speed, providing improved test coverage for expedited validation and enabling faster time to market and enhancing system reliability.

TrendForce reports that memory module makers have been aggressively increasing their DRAM inventories since 3Q23, with inventory levels rising to 11-17 weeks by 2Q24. However, demand for consumer electronics has not rebounded as expected. For instance, smartphone inventories in China have reached excessive levels, and notebook purchases have been delayed as consumers await new AI-powered PCs, leading to continued market contraction.

This has led to a weakening in spot prices for memory products primarily used in consumer electronics, with Q2 prices dropping over 30% compared to Q1. Although spot prices remained disconnected from contract prices through August, this divergence may signal potential future trends for contract pricing.

SK hynix announced today that it has developed the industry's first 16 Gb DDR5 built using its 1c node, the sixth generation of the 10 nm process. The success marks the beginning of the extreme scaling to the level closer to 10 nm in the memory process technology. The degree of difficulty to advance the shrinking process of the 10 nm-range DRAM technology has grown over generations, but SK hynix has become the first in the industry to overcome the technological limitations by raising the level of completion in design, thanks to its industry-leading technology of the 1b, the fifth generation of the 10 nm process.

SK hynix said it will be ready for mass production of the 1c DDR5 within the year to start volume shipment next year. In order to reduce potential errors stemming from the procedure of advancing the process and transfer the advantage of the 1b, which is widely applauded for its best performing DRAM, in the most efficient way, the company extended the platform of the 1b DRAM for development of 1c. The new product comes with an improvement in cost competitiveness, compared with the previous generation, by adopting a new material in certain process of the extreme ultraviolet, or EUV, while optimizing the EUV application process of total. SK hynix also enhanced productivity by more than 30% through technological innovation in design.

Micron has been on a spending spree in Taiwan, where the company has been looking for new facilities. Micron has agreed to buy no less than three LCD plants from display maker AUO, which are located in the central Taiwanese city of Taichung. Micron is looking at paying NT$ 8.1 billion (~US$253.3 million). Initially, Micron was interested in buying another plant in Tainan from Innolux, but was turned down, so Micron turned to AUO for the purchases. Earlier this year, TSMC spent NT$17 billion (~US$531.6 million) to buy a similar facility from Innolux, but it seems that Innolux wasn't willing to part with any more facilities this year.

The three AUO plants are said to have produced LCD colour filters and the two of the plants had closed for production earlier this month. However, it appears that for some reason, the plant that is still in operation, will be leased by AUO and the company will continue production of colour filters in the factory. The larger plant measures 146,033 square metres, with the smaller measuring 32,500 square metres. As for Micron's plans, not much is known at this point in time, but the company has announced that it's planning on using at least some of the space for front-end wafer testing and that the new plants will support its current and upcoming DRAM production fabs in Taichung and Taoyuan, which the company is currently expanding. Market sources in Taiwan are quoted as saying that the focus will be on HBM memory, due to the high demand from various AI products in the market, least not from NVIDIA. The deal is expected to be finalised by the end of the year.