TrendForce's latest findings reveal that U.S. tariff hikes prompted most downstream brands to frontload shipments to 1Q25, accelerating inventory reduction across the memory supply chain. Looking ahead to the second quarter, conventional DRAM prices are expected to decline by just 0-5% QoQ, while average DRAM pricing including HBM is forecast to rise by 3-8%, driven by increasing shipments of HBM3e 12hi.

PC and server DRAM prices to hold steady
In response to potential U.S. tariff hikes, major PC OEMs are requesting ODMs to increase production, accelerating DRAM depletion in their inventories. OEMs with lower inventory levels may raise procurement from suppliers in Q2 to ensure stable DRAM supply for the second half of 2025.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its second quarter of fiscal 2025, which ended February 27, 2025.

Fiscal Q2 2025 highlights

• Revenue of $8.05 billion versus $8.71 billion for the prior quarter and $5.82 billion for the same period last year
• GAAP net income of $1.58 billion, or $1.41 per diluted share
• Non-GAAP net income of $1.78 billion, or $1.56 per diluted share
• Operating cash flow of $3.94 billion versus $3.24 billion for the prior quarter and $1.22 billion for the same period last year

"Micron delivered fiscal Q2 EPS above guidance and data center revenue tripled from a year ago," said Sanjay Mehrotra, Chairman, President and CEO of Micron Technology. "We are extending our technology leadership with the launch of our 1-gamma DRAM node. We expect record quarterly revenue in fiscal Q3, with DRAM and NAND demand growth in both data center and consumer-oriented markets, and we are on track for record revenue and significantly improved profitability in fiscal 2025."

SK hynix Inc. announced today that it has shipped the samples of 12-layer HBM4, a new ultra-high performance DRAM for AI, to major customers for the first time in the world. The samples were delivered ahead of schedule based on SK hynix's technological edge and production experience that have led the HBM market, and the company is to start the certification process for the customers. SK hynix aims to complete preparations for mass production of 12-layer HBM4 products within the second half of the year, strengthening its position in the next-generation AI memory market.

The 12-layer HBM4 provided as samples this time feature the industry's best capacity and speed which are essential for AI memory products. The product has implemented bandwidth capable of processing more than 2 TB (terabytes) of data per second for the first time. This translates to processing data equivalent to more than 400 full-HD movies (5 GB each) in a second, which is more than 60 percent faster than the previous generation, HBM3E.

AMD today launched the EPYC Embedded 9005 line of server processors in the embedded form-factor. These are non-socketed variants of the EPYC 9005 "Turin" server processors. The chips are intended for servers and other enterprise applications where processor replacements or upgradability are not a consideration. The EPYC Embedded 9005 "Turin" are otherwise every bit similar to the regular socketed EPYC 9005 series. These chips are based on a BGA version of the "Turin" chiplet-based processor, and powered by the "Zen 5" microarchitecture. Besides the BGA package, the EPYC Embedded 9005 series comes with a few features relevant to its form-factor and target use-cases.

To begin with, the EPYC Embedded 9005 "Turin" series comes with NTB (non-transparent bridging), a technology that enables high-performance data transfer between two processor packages across different memory domains. NTB doesn't use Infinity Fabric or even CXL, but a regular PCI-Express 5.0 x16 connection. It isn't intended to provide cache coherence, but to absorb faults across various memory domains. Next up, the series supports DRAM flush for enhanced power-loss mitigation. Upon detecting a power loss, the processor immediately dumps memory onto NVMe storage, before the machine turns off. On restart, the BIOS copies this memory dump from the NVMe SSD back to DRAM. Thirdly, the processors in the series support dual SPI flash interfaces, which enables system architects to embed lightweight operating systems directly onto a 64 MB SPI flash ROM, besides the primary SPI flash that stores the system BIOS. This lightweight OS can act like a bootloader for operating systems in other local storage devices.

TrendForce's latest research reveals that the NAND Flash market faced downward pressure in 4Q24 as PC and smartphone manufacturers continued inventory clearance efforts, leading to significant supply chain adjustments. Consequently, NAND Flash prices reversed downward, with ASP dropping 4% QoQ, while overall bit shipments declined by 2%. Total industry revenue fell 6.2% QoQ to US$16.52 billion.

Looking ahead to 1Q25, the traditional slow season effect remains unavoidable despite suppliers actively reducing production. Server and other key end-market inventory restocking has slowed, and with both order volumes and contract prices declining sharply. NAND Flash industry revenue is expected to drop by up to 20% QoQ. However, as production cuts take effect and prices stabilize, the NAND Flash market is expected to recover in the second half of 2025.

TrendForce's latest research reveals that global DRAM industry revenue surpassed US$28 billion in 4Q24, marking a 9.9% QoQ increase. This growth was primarily driven by rising contract prices for server DDR5 and concentrated shipments of HBM, leading to continued revenue expansion for the top three DRAM suppliers.

Most contract prices across applications were seen to have reversed downward. However, increased procurement of high-capacity server DDR5 by major American CSPs helped sustain price momentum for server DRAM.

Micron Technology, Inc., today announced it is the first in the industry to ship samples of its 1γ (1-gamma), sixth-generation (10 nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs to ecosystem partners and select customers. This 1γ DRAM milestone builds on Micron's previous 1α (1-alpha) and 1β (1-beta) DRAM node leadership to deliver innovations that will power future computing platforms from the cloud to industrial and consumer applications to Edge AI devices like AI PCs, smartphones and automobiles. The Micron 1γ DRAM node will first be leveraged in its 16 Gb DDR5 DRAM and over time will be integrated across Micron's memory portfolio to meet the industry's accelerating demand for high-performance, energy-efficient memory solutions for AI. Designed to offer speed capabilities of up to 9200 MT/s, the 16 Gb DDR5 product provides up to a 15% speed increase and over 20% power reduction compared to its predecessor.

Inside sources—familiar with goings-ons at leading DRAM manufacturing firms—have predicted the end of DDR3 and DDR4 production lines. According to a DigiTimes Asia report (citing Nikkei), industry observers have noticed that the DRAM market is undergoing a so-called "shift." They believe that pricing trends are decreasing due to weak demand. Samsung Electronics, SK Hynix, and Micron are named as major players; allegedly involved in devising new strategies—in reaction to fluid market circumstances. The DigiTimes insider network proposes that the big three: "may phase out DDR3 and DDR4 by 2025...by the end of 2025...anticipating a future focused on advanced memory technologies." Older standards are falling out of favor, with DDR5 and high-bandwidth memory (HBM) on the ascent. Industry watchdogs reckon that possible DDR3 and DDR4 supply shortages could occur "post-summer 2025."

Taiwan's Nanya Technology has predicted that the overall DRAM market will "bottom out" within the first half of 2025. An eventual recovery is envisioned by the second quarter; AI-related demands could help drive up demand by a large margin. Additionally, Nanya points to improved inventory management and global economic stimulus. Taiwanese DRAM production houses are expected to pick up some slack, but an unnamed "key component distributor" anticipates serious after-effects. An anonymous source believes that the: "anticipated halt in production could lead to significant supply constraints, challenging market dynamics and impacting pricing strategies." Nanya Technology and Winbond Electronics produce specialized DRAM-types; therefore are not touted to be great gap fillers. The latter is reportedly reacting to weak demand for "mature" DDR products—DigiTimes commented on this development: "Winbond Electronics is advancing its manufacturing by transitioning to a 16 nm process in the latter half of 2025. This upgrade from the current 20 nm process, primarily used for 4 Gb DDR3 and DDR4, will enable Winbond to produce 8 Gb DDR memory."

During its first post-Western Digital spinoff investor day, SanDisk showed something it has been working on to tackle the AI sector. High-bandwidth flash (HBF) is a new memory architecture that combines 3D NAND flash storage with bandwidth capabilities comparable to high-bandwidth memory (HBM). The HBF design stacks 16 3D NAND BiCS8 dies using through-silicon vias, with a logic layer enabling parallel access to memory sub-arrays. This configuration achieves 8 to 16 times greater capacity per stack than current HBM implementations. A system using eight HBF stacks can provide 4 TB of VRAM to store large AI models like GPT-4 directly on GPU hardware. The architecture breaks from conventional NAND design by implementing independently accessible memory sub-arrays, moving beyond traditional multi-plane approaches. While HBF surpasses HBM's capacity specifications, it maintains higher latency than DRAM, limiting its application to specific workloads.

SanDisk has not disclosed its solution for NAND's inherent write endurance limitations, though using pSLC NAND makes it possible to balance durability and cost. The bandwidth of HBF is also unknown, as the company hasn't put out details yet. SanDisk Memory Technology Chief Alper Ilkbahar confirmed the technology targets read-intensive AI inference tasks rather than latency-sensitive applications. The company is developing HBF as an open standard, incorporating mechanical and electrical interfaces similar to HBM to simplify integration. Some challenges remain, including NAND's block-level addressing limitations and writing endurance constraints. While these factors make HBF unsuitable for gaming applications, the technology's high capacity and throughput characteristics align with AI model storage and inference requirements. SanDisk has announced plans for three generations of HBF development, indicating a long-term commitment to the technology.

V-COLOR Technology Inc. proudly introduces the groundbreaking CKD SCC (Speed Booster, Colorful Makeover and Cost effective) O CUDIMM RGB Filler Kit 2+2 (2 DRAM Modules + 2 Filler Modules) additions to its DDR5 memory lineup, redefining high-performance and customization. With the launch of the new SCC O CUDIMM RGB Filler Kit now compatible with Intel Core Ultra CPUs Motherboards 800 series up to 8800 MT/s and not only that, the already existent SCC UDIMM kit just got a massive upgrade now reaching 8000 MT/s with dual profiles for Intel XMP 3.0 and AMD EXPO. This new SCC line will be under the family of the already amazing XFinity series that continues to push the boundaries of memory innovation.

The latest CKD SCC O CUDIMM is optimized for Intel Core Ultra CPUs and Z890 series motherboards, offering unmatched performance and stability. With speeds reaching 8000 MT/s ~ 8200 MT/s for 32 GB (2x 16 GB) configurations and 7000 MT/s ~ 8800 MT/s for 48 GB (2x 24 GB) configurations. The latest lineup of SCC technology doesn't just revolutionize the new O CUDIMM memory modules; it also pushes the boundaries of already existing UDIMMs to unprecedented levels. Speeds now reach an impressive 7200 MT/s up to 8000 MT/s, while the addition of dual profiles ensures seamless compatibility and performance optimization for both AMD EXPO and Intel XMP 3.0 systems. This development bridges accessibility across platforms, offering next-level performance for enthusiasts and professionals alike.

The Semiconductor Industry Association (SIA) today announced global semiconductor sales hit $627.6 billion in 2024, an increase of 19.1% compared to the 2023 total of $526.8 billion. Additionally, fourth-quarter sales of $170.9 billion were 17.1% more than the fourth quarter of 2023, and 3.0% higher than the third quarter of 2024. And global sales for the month of December 2024 were $57.0 billion, a decrease of 1.2% compared to the November 2024 total. Monthly sales are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average. SIA represents 99% of the U.S. semiconductor industry by revenue and nearly two-thirds of non-U.S. chip firms.

"The global semiconductor market experienced its highest-ever sales year in 2024, topping $600 billion in annual sales for the first time, and double-digit market growth is projected for 2025," said John Neuffer, SIA president and CEO. "Semiconductors enable virtually all modern technologies - including medical devices, communications, defense applications, AI, advanced transportation, and countless others - and the long-term industry outlook is incredibly strong."

SK hynix Inc. announced today that it has acquired TISAX, the global automobile industry information security certification, for the first time in the memory industry. SK hynix has obtained TISAX for all domestic sites located in Icheon, Bundang and Cheongju, and has been internationally accepted for the security capabilities required by the global automobile industry. Through this, the company aims to accelerate the development of high-performance memory solutions essential for realizing AI-based future automobile technology.

With the expansion of the electric vehicle market, autonomous driving, and the development of connected car technology, the importance of electronic parts is growing rapidly. In line with these changes, automotive semiconductors, which are widely used in electric equipment, are positioned as major components of automobiles. In particular, automotive semiconductors are applied to key safety systems of automobiles such as ADAS, brake systems and engine control, requiring a higher level of reliability than general semiconductors. In addition, as hacking and malicious code attacks targeting automobiles have increased recently, systematic security management in the manufacturing process is being emphasized as well as strengthening the performance of semiconductors themselves.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2024. The Company posted KRW 75.8 trillion in consolidated revenue and KRW 6.5 trillion in operating profit in the quarter ended December 31, 2024. For the full year, it reported KRW 300.9 trillion in annual revenue and KRW 32.7 trillion in operating profit.

Although fourth quarter revenue and operating profit decreased on a quarter-on-quarter (QoQ) basis, annual revenue reached the second-highest on record, surpassed only in 2022. Meanwhile, operating profit was down KRW 2.7 trillion QoQ, due to soft market conditions especially for IT products, and an increase in expenditures including R&D. In the first quarter of 2025, while overall earnings improvement may be limited due to weakness in the semiconductors business, the Company aims to pursue growth through increased sales of smartphones with differentiated AI experiences, as well as premium products in the Device eXperience (DX) Division.

TechInsights has identified CXMT's new 16 nm DRAM chips in Gloway DDR-6000 UDIMM modules, confirming advancement in the Chinese memory industry. The CXMT 16 Gb DDR5 chip measures 67 square millimeters with a density of 0.239 Gb per square millimeter. The G4 DRAM cells are 20 percent smaller than CXMT's previous G3 generation. This follows the company's progression from 23 nm (G1) and 18 nm (G2) nodes. Despite this advancement, CXMT remains approximately three years behind Samsung, SK Hynix, and Micron in manufacturing capabilities. The Hefei-based company achieved this production milestone under US sanctions restricting access to certain manufacturing equipment and materials, setting it back years in gaining production of advanced memory nodes.

TechInsights found these chips in commercially available memory modules, confirming CXMT's entry into DDR5 production. DDR5 technology is projected to be the primary DRAM standard through 2027. The three major DRAM manufacturers have been producing DDR5 through multiple generations, with DDR5 now reaching 10,000 MT/s speeds. This represents CXMT's first DDR5 DRAM product to reach the consumer market. The chips meet basic compatibility requirements for current DDR5 specifications, meaning that the Chinese memory manufacturing has achieved "1z" memory manufacturing on its soil. This marks the second major news for the Chinese semiconductor industry, right after TechInsights also confirmed that YMTC has started shipping 292-layer NAND Flash. With domestic demand for memory and storage projected to remain strong, we wonder if the supply will exceed demand and allow some left-over chips for worldwide usage.

Kioxia Corporation, a world leader in memory solutions, today announced the open-source release of its new All-in-Storage ANNS with Product Quantization (AiSAQ) technology. A novel "approximate nearest neighbor" search (ANNS) algorithm optimized for SSDs, KIOXIA AiSAQ software delivers scalable performance for retrieval-augmented generation (RAG) without placing index data in DRAM - and instead searching directly on SSDs.

Generative AI systems demand significant compute, memory and storage resources. While they have the potential to drive transformative breakthroughs across various industries, their deployment often comes with high costs. RAG is a critical phase of AI that refines large language models (LLMs) with data specific to the company or application.

Transcend Information Inc. (Transcend), a global leader in storage solutions, is proud to announce its new DDR5 6400 CUDIMM DRAM modules. Designed specifically for gamers, content creators, DIY PC enthusiasts, and demanding professionals, these modules offer enhanced performance and stability to meet varying speed and capacity requirements. Optimized from standard DIMMs, CUDIMMs include a Client Clock Driver (CKD) for stable and efficient operation, making them ideal for high-performance desktop systems that require greater bandwidth and reliability.

With data transfer rates of up to 6400 MT/s, Transcend's DDR5 6400 DRAM modules significantly boost gaming performance, video editing smoothness, and large file processing speeds. Whether you are tackling the latest AAA gaming titles, editing high-resolution videos, or multitasking across multiple applications, these modules keep your system running smoothly even under extreme load and deliver an exceptional user experience. Plus, built-in on-die Error Correction Code (ECC) technology ensures data integrity, safeguarding important files, game progress, and creative content.

TrendForce's latest research report highlights that the NAND Flash industry will continue to face dual pressure from weak demand and oversupply in 2025. In response, manufacturers including Micron, Kioxia/SanDisk, Samsung, and SK hynix/Solidigm have similar plans to cut production—a move that could accelerate industry consolidation in the long term.

TrendForce reports that NAND Flash manufacturers are primarily implementing production cuts by lowering utilization rates and delaying process upgrades. These actions are driven by three major factors:

Thermaltake, a leading PC DIY brand for premium hardware solutions, proudly launches today at CES 2025 the TOUGHRAM XG RGB D5 7200 MT/s 32 GB (16 GB x2), now equipped with the latest CKD (Client Clock Driver) technology. This new addition to Thermaltake's high-performance DDR5 memory lineup integrates advanced technology with a sleek design, offering an exceptional solution for PC enthusiasts and professionals. With CKD technology, the TOUGHRAM XG RGB D5 Memory ensures superior signal integrity, improved power efficiency, and enhanced overclocking stability, delivering consistent performance under the most demanding workloads. Ideal for gaming, creative projects, and AI-driven applications, this memory module is engineered to exceed the expectations of modern high-performance computing.

"Thermaltake is committed to redefining the limits of DRAM memory technology to meet the evolving needs of gamers and professionals," said Kenny Lin, CEO of Thermaltake. "The TOUGHRAM XG RGB D5 with CKD technology exemplifies our dedication to delivering cutting-edge solutions that offer superior speed, stability, and customization; whether for serious gamers, creators, or even AI development, this memory sets a new benchmark in high-performance computing."

Micron at the 2025 International CES showed us product that hint at the company planning a strong comeback to the client and PC-DIY market segments. The company's Crucial brand is already a high-volume player in the client segment, but the company never really approached the enthusiast segment. Products like the company's new T705 Pro and P510 NVMe SSDs, and DDR5 Pro Overclocking memory, seek to change this. We begin our tour with PC memory, and the DDR5 Pro OC CUDIMMs. Crucial has jumped onto the CKD bandwagon, introducing memory modules and kits that come with DDR5-6400 out of the box, but which are geared for manual overclocking to take advantage of the 1β DRAM chips underneath (hence the name).

The company also showed us their first DDR5 CSODIMM suitable for the next generation of notebooks with HX-segment processors. This module comes with a CKD and a DDR5-6400 JEDEC-standard SPD profile out of the box. Lastly, there's the Micron-branded LPCAMM2, which comes in speeds of up to LPDDR5X-8533, and is suitable for the next generation of ultraportables.

T-FORCE, the gaming brand of global memory leader Team Group Inc., has announced the launch of the 8 TB capacity specification for T-FORCE GE PRO PCIe 5.0 SSD. Designed for users who seek exceptional performance and reliability, this SSD delivers blazing-fast read and write speeds of up to 13,500 MB/s and 11,000 MB/s, respectively. Featuring DRAM Cache technology, it excels in-game system loading and data caching, significantly enhancing overall SSD performance. The 8 TB specification is paired with the T-FORCE AirFlow SSD Cooler with advanced active cooling technology to achieve sustained high-performance operation. It meets the needs of large storage capacity and ultra-fast data transfer to provide gamers with an unrivaled gaming experience.

The T-FORCE GE PRO PCIe 5.0 SSD integrates smart performance adjustment to prevent overheating and maintain system stability. Team Group's patented graphene heatsink further enhances heat dissipation to elevate product reliability. The SSD also incorporates advanced Security Isolation technology to protect against malicious external threats, while enhanced 4K LDPC technology improves data transfer accuracy and extends product lifespan. The inclusion of Team Group's proprietary S.M.A.R.T. monitoring software allows users to monitor the health and performance of their SSD with ease, setting a new standard for storage solutions.

Corsair today announced a bounty of new hardware for PC builders and content creators, ranging from new power supplies and cases to new storage and memory offerings. In addition to all-new hardware such as the XENEON EDGE 14.5" Touchscreen, EX400U USB4 External SSD, DOMINATOR TITANIUM Wave Accessory Kit, and Corsair Custom Lab memory, there are also updates to the distinguished RMe and HXi power supplies featuring boosted capabilities for next-gen GPUs. Finally, the revamped 5000T Series of mid-tower cases introduces support for reverse-connector motherboards, making them the perfect showcase for super-clean builds.

New hardware announcements:

• XENEON EDGE 14.5" LCD Touchscreen
• RMe Series (2025) Power Supplies
• 5000T Series Mid-Tower Cases
• HXi Series (2025) Power Supplies
• EX400U USB4 External SSD
• Corsair Custom Lab DRAM
• DOMINATOR TITANIUM Wave Accessory Kit

SK hynix has returned to Las Vegas for Consumer Electronics Show (CES) 2025, showcasing its latest AI memory innovations reshaping the industry. Held from January 7-10, CES 2025 brings together the brightest minds and groundbreaking technologies from the world's leading tech companies. This year, the event's theme is "Dive In," inviting attendees to immerse themselves in the next wave of technological advancement. SK hynix is emphasizing how it is driving this wave through a display of leading AI memory technologies at the SK Group exhibit. Along with SK Telecom, SKC, and SK Enmove, the company is highlighting how the Group's AI infrastructure brings about true change under the theme "Innovative AI, Sustainable Tomorrow."

Groundbreaking Memory Tech Driving Change in the AI Era
Visitors enter SK Group's exhibit through the Innovation Gate, greeted by a video of dynamic wave-inspired visuals which symbolize the power of AI. The video shows the transformation of binary data into a wave which flows through the exhibition, highlighting how data and AI drives change across industries. Continuing deeper into the exhibit, attendees make their way into the AI Data Center area, the focal point of SK hynix's display. This area features the company's transformative memory products driving progress in the AI era. Among the cutting-edge AI memory technologies on display are SK hynix's HBM, server DRAM, eSSD, CXL, and PIM products.

TrendForce's latest investigations reveal that the DRAM market is expected to face downward pricing pressure in 1Q25 as seasonal weakness aligns with sluggish consumer demand for products like smartphones. Additionally, early stockpiling by notebook manufacturers—over potential import tariffs under the Trump administration—has further exacerbated the pricing decline.

Conventional DRAM prices are projected to drop by 8% to 13%. However, if HBM products are included, the anticipated price decline will range from 0% to 5%.

Nanya Technology's Board of Directors today has approved a strategic partnership with PieceMakers Technology, Inc. ("PieceMakers") to jointly develop customized ultra-high-bandwidth memory solutions. As part of the collaboration, Nanya Technology will subscribe to a cash capital increase of up to NT$ 660 million, purchasing up to 22 million common shares at NT$ 30 per share in PieceMakers. Upon completion of the capital increase, Nanya Technology is expected to acquire up to approximately 38% stakes of PieceMakers.

To meet the growing demand for high-performance memory driven by AI and edge computing, this collaboration will combine Nanya Technology's 10 nm-class DRAM innovation with PieceMakers' expertise in customized DRAM design to develop high-value, high-performance, and low-power customized ultra-high-bandwidth memory solutions, unlocking new opportunities in AI and high-performance computing markets.

This week, at the 2024 IEEE International Electron Devices Meeting (IEDM), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, proposes a novel 3D integrated charge-coupled device (CCD) that can operate as a block-addressable buffer memory, in support of data-intensive compute applications. Memory operation is demonstrated on a planar proof-of-concept CCD structure which can store 142 bits. Implementing an oxide semiconductor channel material (such as IGZO) ensures sufficiently long retention time and enables 3D integration in a cost-efficient, 3D NAND-like architecture. Imec expects the 3D CCD memory density to scale far beyond the DRAM limit.

The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement DRAM in data-intensive compute applications like AI and ML. One example is the CXL type-3 buffer memory, envisioned as an off-chip pool of memories that 'feeds' the various processor cores with large data blocks via a high-bandwidth CXL switch. This class of memories meets different specifications than byte-addressable DRAM, which increasingly struggles to maintain the cost-per-bit-trend scaling line.