Semiconductor industry research firm TechInsights said it has found that Samsung's 3 nm GAA (gate-all-around) process has been incorporated into the crypto miner ASIC (Whatsminer M56S++) from a Chinese manufacturer, MicroBT. In a Disruptive Technology Event Brief exclusively provided to DIGITIMES Asia, TechInsights points out that the significance of this development lies in the commercial utilization of GAA technology, which facilitates the scaling of transistors to 2 nm and beyond. "This development is crucial because it has the potential to enhance performance, improve energy efficiency, keep up with Moore's Law, and enable advanced applications," said TechInsights, identifying the MicroBT ASIC chip the first commercialized product using GAA technology in the industry.

But this would also reveal that Samsung is the foundry for MicroBT, using the 3 nm GAA process. DIGITIMES Research semiconductor analyst Eric Chen pointed out that Samsung indeed has started producing chips using the 3 nm GAA process, but the capacity is still small. "Getting revenues from shipment can be defined as 'commercialization', but ASIC is a relatively simple kind of chip to produce, in terms of architecture."

Competition between Samsung and TSMC in the 4 nm and 3 nm foundry process markets is about to heat up, with the Korean foundry claiming yields competitive to those of TSMC, according to a report in the Kukmin Ilbo, a Korean daily newspaper. 4 nm is the final silicon fabrication process to use the FinFET technology that powered nodes ranging between 16 nm to 4 nm. Samsung Foundry is claiming 4 nm wafer yields of 75%, against the 80% yields figure put out by TSMC. 4 nm powers several current-generation mobile SoCs, PC processors, and more importantly, the GPUs driving the AI gold-rush.

Things get very interesting with 3 nm, the node that debuts GAA-FET (gates all around FET) technology. Here, Samsung claims to offer higher yields than TSMC, with its 3 nm GAA node clocking 60% yields, against 55% put out by TSMC. Samsung was recently bitten by a scandal where its engineers allegedly falsified yields figures to customers to score orders, which had a cascading effect on the volumes and competitiveness of their customers. We're inclined to think that Samsung has taken lessons and is more careful with the yields figures being reported in the press. Meanwhile, Intel Foundry Services competes with the Intel 3 node, which is physically 7 nm FinFET, but with electrical characteristics comparable to those of 3 nm.

According to Taiwanese media, TSMC will start production of its first 1.4 nm fab in 2026, with chip production in the fab said to start sometime in 2027 or 2028. The new fab will be located in Longtan Science Park outside of Hsinchu in Taiwan, where many of TSMC's current fabs are located. TSMC is currently constructing a 2 nm and below node R&D facility at a nearby plot of land to where the new fab is expected to be built. This facility is expected to be finished in 2025 and TSMC has been allocated a total area of just over 158 hectares of land for future expansion in the area.

In related news, TSMC is expected to be charging US$25,000 per 2 nm GAA wafer, which is an increase of about a fifth compared to its 3 nm wafers which are going for around US$20,000. This is largely due to the nodes being fully booked and TSMC being able to charge a premium for its cutting edge nodes. TSMC is also expanding in CoWoS packaging facilities due to increased demand from both AMD and NVIDIA for AI related products. Currently TSMC is said to be able to output 12,000 CoWoS wafers per month and this is twice as much as last year, yet TSMC is unable to meet demand from its customers.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced its latest foundry technology innovations and business strategy at the 7th annual Samsung Foundry Forum (SFF) 2023. Under the theme "Innovation Beyond Boundaries," this year's forum delved into Samsung Foundry's mission to address customer needs in the artificial intelligence (AI) era through advanced semiconductor technology.

Over 700 guests, from customers and partners of Samsung Foundry, attended this year's event, of which 38 companies hosted their own booths to share the latest technology trends in the foundry industry.

During the European Technology Symposium 2023, TSMC presented additional details regarding the upcoming complementary FET (CFET) technology to power the next generation of silicon-based devices. With Nanosheet replacing FinFET, the CFET technology will do the same to the Gate All Around FET (GAAFET) Nanosheet nodes. As the company notes, CFET transistors are now in the TSMC labs and are being tested for performance, efficiency, and density. Compared to GAAFET, CFET will provide greater design in all of those areas, but it will require some additional manufacturing steps to get the chip working as intended. Integrating both p-type and n-type FETs into a single device, CFET will require the use of High NA EUV scanners with high precision and high power to manufacture it.

The use of CFET, as the roadmap shows, is one of the last steps in the world of silicon. It will require the integration of new materials into the manufacturing process, resulting in a greater investment into research and development that is in charge of node creation. Kevin Zhang, senior vice president at TSMC, responsible for technology roadmap and business development, notes: "Let me make a clarification on that roadmap, everything beyond the Nanosheet is something we will put on our [roadmap] to tell you there is still future out there. We will continue to work on different options. I also have the add on to the one-dimensional material-[based transistors] […], all of those are being researched on being investigated on the future potential candidates right now, we will not tell you exactly the transistor architecture will be beyond the Nanosheet."

Samsung Electronics is engaged in stiff competition with TSMC for chip manufacturing orders for 3 nm, its first semiconductor foundry node to implement GAA-FET technology, after nearly a decade of FinFET-based nodes. SF3, a 3 nm GAA-FET node, enters mass-production later this year. Samsung is claiming wafer yields in the range of 60-70% in the development phases of the node. This number is crucial to attract customers as they base their wafer orders squarely on yields first, and cost-per-wafer next.

Samsung is trying to rebuild confidence among chip designers after the 2022 controversy over its engineering "fabricating" yield numbers to customers to win their business. Samsung also stated that with 2023-2024 being dominated by 3 nm-class nodes, namely SF3 (3GAP), and its refinement the SF3P (3GAP+), the company will begin introducing its 2 nm class nodes in 2025-2026. Samsung's current customers for its 3 nm node include unnamed HPC processor designer, and a mobile AP (application processor) designer.

Samsung Electronics today reported financial results for the first quarter ended March 31, 2023. The Company posted KRW 63.75 trillion in consolidated revenue, a 10% decline from the previous quarter, as overall consumer spending slowed amid the uncertain global macroeconomic environment. Operating profit was KRW 0.64 trillion as the DS (Device Solutions) Division faced decreased demand, while profit in the DX (Device eXperience) Division increased.

The DS Division's profit declined from the previous quarter due to weak demand in the Memory Business, a decline in utilization rates in the Foundry Business and continued weak demand and inventory adjustments from customers. Samsung Display Corporation (SDC) saw earnings in the mobile panel business decline quarter-on-quarter amid a market contraction, while the large panel business slightly narrowed its losses. The DX Division's results improved on the back of strong sales of the premium Galaxy S23 series as well as an enhanced sales mix focusing on premium TVs.

Intel Foundry Services (IFS) and Arm today announced a multigeneration agreement to enable chip designers to build low-power compute system-on-chips (SoCs) on the Intel 18A process. The collaboration will focus on mobile SoC designs first, but allow for potential design expansion into automotive, Internet of Things (IoT), data center, aerospace and government applications. Arm customers designing their next-generation mobile SoCs will benefit from leading-edge Intel 18A process technology, which delivers new breakthrough transistor technologies for improved power and performance, and from IFS's robust manufacturing footprint that includes U.S.- and EU-based capacity.

"There is growing demand for computing power driven by the digitization of everything, but until now fabless customers have had limited options for designing around the most advanced mobile technology," said Pat Gelsinger, CEO of Intel Corporation. "Intel's collaboration with Arm will expand the market opportunity for IFS and open up new options and approaches for any fabless company that wants to access best-in-class CPU IP and the power of an open system foundry with leading-edge process technology."

Intel Foundry Services, the in-house semiconductor foundry of Intel, announced that its 2 nm-class Intel 20A and 1.8 nm-class Intel 18A foundry nodes have completed development, and are on course for mass-producing chips on their roadmap dates. Chips are expected to begin mass-production on the Intel 20A node in the first half of 2024, while those on the Intel 18A node are expected to begin in the second half of 2024. The completion of the development phase means that Intel has finalized the specifications and performance/power targets of the nodes, the tools and software required to make the chips, and can now begin ordering them to build the nodes. Intel has been testing these nodes through 2022, and with the specs being finalized, chip-designers can accordingly wrap up development of their products to align with what these nodes have to offer.

Intel 20A (or 20-angstrom, or 2 nm) node introduces gates-all-around (GAA) RibbonFET transistors with PowerVIAs (an interconnect innovation that contributes to transistor densities). The Intel 20A node is claimed to offer a 15% performance/Watt gain over its predecessor, the Intel 3 node (FinFET EUV, 3 nm-class), which by itself offers an 18% performance/Watt gain over Intel 4 (20% perf/Watt gain over the current Intel 7 node), the node that is entering mass-production very soon. The Intel 18A node is a further refinement of Intel 20A, and introduces a design improvement to the RibbonFET that increases transistor density at scale, and a claimed 10% performance/Watt improvement over Intel 20A.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2022. The Company posted KRW 70.46 trillion in consolidated revenue and KRW 4.31 trillion in operating profit in the quarter ended December 31, 2022. For the full year, it reported 302.23 trillion in annual revenue, a record high and KRW 43.38 trillion in operating profit.

The business environment deteriorated significantly in the fourth quarter due to weak demand amid a global economic slowdown. Earnings at the Memory Business decreased sharply as prices fell and customers continued to adjust inventory. The System LSI Business also saw a decline in earnings as sales of key products were weighed down by inventory adjustments in the industry. The Foundry Business posted a new record for quarterly revenue while profit increased year-on-year on the back of advanced node capacity expansion as well as customer base and application area diversification.

Today, Intel unveiled research breakthroughs fueling its innovation pipeline for keeping Moore's Law on track to a trillion transistors on a package in the next decade. At IEEE International Electron Devices Meeting (IEDM) 2022, Intel researchers showcased advancements in 3D packaging technology with a new 10x improvement in density; novel materials for 2D transistor scaling beyond RibbonFET, including super-thin material just 3 atoms thick; new possibilities in energy efficiency and memory for higher-performing computing; and advancements for quantum computing.

"Seventy-five years since the invention of the transistor, innovation driving Moore's Law continues to address the world's exponentially increasing demand for computing. At IEDM 2022, Intel is showcasing both the forward-thinking and concrete research advancements needed to break through current and future barriers, deliver to this insatiable demand, and keep Moore's Law alive and well for years to come." -Gary Patton, Intel vice president and general manager of Components Research and Design Enablement

AMD (NASDAQ:AMD) today announced selected preliminary financial results for the third quarter of 2022. Third quarter revenue is expected to be approximately $5.6 billion, an increase of 29% year-over-year. AMD previously expected revenue to increase approximately 55% year-over-year at the mid-point of guidance. Preliminary results reflect lower than expected Client segment revenue resulting from reduced processor shipments due to a weaker than expected PC market and significant inventory correction actions across the PC supply chain.

Revenue for the Data Center, Gaming, and Embedded segments each increased significantly year-over-year in-line with the company's expectations. Gross margin is expected to be approximately 42% and non-GAAP(*) gross margin is expected to be approximately 50%. AMD previously expected non-GAAP gross margin to be approximately 54%. The gross margin shortfall to expectations was primarily due to lower revenue driven by lower Client processor unit shipments and average selling price (ASP). In addition, the third quarter results are expected to include approximately $160 million of charges primarily for inventory, pricing, and related reserves in the graphics and client businesses.

Samsung Electronics, a world leader in advanced semiconductor technology, announced today a strengthened business strategy for its Foundry Business with the introduction of cutting-edge technologies at its annual Samsung Foundry Forum event. With significant market growth in high-performance computing (HPC), artificial intelligence (AI), 5/6G connectivity and automotive applications, demand for advanced semiconductors has increased dramatically, making innovation in semiconductor process technology critical to the business success of foundry customers. To that end, Samsung highlighted its commitment to bringing its most advanced process technology, 1.4-nanometer (nm), for mass production in 2027.

During the event, Samsung also outlined steps its Foundry Business is taking in order to meet customers' needs, including: foundry process technology innovation, process technology optimization for each specific applications, stable production capabilities, and customized services for customers. "The technology development goal down to 1.4 nm and foundry platforms specialized for each application, together with stable supply through consistent investment are all part of Samsung's strategies to secure customers' trust and support their success," said Dr. Si-young Choi, president and head of Foundry Business at Samsung Electronics. "Realizing every customer's innovations with our partners has been at the core of our foundry service."

According to TrendForce research, due to steady weakening of overall demand for consumer electronics, inventory pressure has increased among downstream distributors and brands. Although there are still sporadic shortages of specific components, the curtain has officially fallen on a two-year wave of shortages in general, and brands have gradually suspended stocking in response to changes in market conditions. However, stable demand for automotive and industrial equipment is key to supporting the ongoing growth of foundry output value. At the same time, since the creation of a marginal amount of new capacity in 2Q22 led to growth in wafer shipments and a price hike for certain wafers, this drove output value among top ten foundries to reach US$33.20 billion in 2Q22. Quarterly growth fell to 3.9% on a weakening consumer market.

A prelude to inventory correction was officially revealed in 3Q22. In addition to intensifying severity in the initial wave of order slashing for LDDI/TDDI, and TV SoC, diminishing order volume also extended to non-Apple smartphone APs and peripheral IC PMIC, CIS, and consumer electronics PMICs, and mid-to-low-end MCUs, posing a challenge for foundry capacity utilization. However, the launch of the new iPhone in 3Q22 is expected to prop up a certain amount of stocking momentum for the sluggish market. Therefore, top ten foundry revenue in 3Q22 is expected to maintain a growth trend driven by high-priced processes and quarterly growth rate is expected to be slightly higher than in 2Q22.

Microsoft Corp. today announced the following results for the quarter ended June 30, 2022, as compared to the corresponding period of last fiscal year:

• Revenue was $51.9 billion and increased 12% (up 16% in constant currency)
• Operating income was $20.5 billion and increased 8% (up 14% in constant currency)
• Net income was $16.7 billion and increased 2% (up 7% in constant currency)
• Diluted earnings per share was $2.23 and increased 3% (up 8% in constant currency)

"We see real opportunity to help every customer in every industry use digital technology to overcome today's challenges and emerge stronger," said Satya Nadella, chairman and chief executive officer of Microsoft. "No company is better positioned than Microsoft to help organizations deliver on their digital imperative - so they can do more with less."

Samsung Electronics, the world leader in semiconductor technology, today announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture. Multi-Bridge-Channel FET (MBCFET), Samsung's GAA technology implemented for the first time ever, defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current capability. Samsung is starting the first application of the nanosheet transistor with semiconductor chips for high performance, low power computing application and plans to expand to mobile processors.

"Samsung has grown rapidly as we continue to demonstrate leadership in applying next-generation technologies to manufacturing, such as foundry industry's first High-K Metal Gate, FinFET, as well as EUV. We seek to continue this leadership with the world's first 3 nm process with the MBCFET," said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. "We will continue active innovation in competitive technology development and build processes that help expedite achieving maturity of technology."

Responding to investor questions in TSMC's first quarter earnings call for 2022, CEO C. C. Wei reiterated that the company's upcoming manufacturing processes are generally moving smoothly throughout development. Even as TSMC announced historic revenues on the back of increased pricing throughout the semiconductor industry, the company is showing no signs of slowing down on its development. When further asked regarding the company's ability to navigate the world's troubled, inflation-ridden waters, Wei added that TSMC's strategic positioning as the leading semiconductor foundry makes it resilient to market and demand fluctuations.

TSMC's roadmap has seen multiple accelerations of late, which have placed 3 nm tape-out to occur before the end of the year. Perhaps more significantly, the company's next-generation 2 nm manufacturing process, which will make use of GAA (Gate All Around) transistor designs for greater design efficiency and density, are still on track for a 2025 volume production following an expected 2024 tape-out.

Samsung Electronics, a world leader in advanced semiconductor technology, today unveiled plans for continuous process technology migration to 3- and 2-nanometer (nm) based on the company's Gate-All-Around (GAA) transistor structure at its 5th annual Samsung Foundry Forum (SFF) 2021. With a theme of "Adding One More Dimension," the multi-day virtual event is expected to draw over 2,000 global customers and partners. At this year's event, Samsung will share its vision to bolster its leadership in the rapidly evolving foundry market by taking each respective part of foundry business to the next level: process technology, manufacturing operations, and foundry services.

"We will increase our overall production capacity and lead the most advanced technologies while taking silicon scaling a step further and continuing technological innovation by application," said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. "Amid further digitalization prompted by the COVID-19 pandemic, our customers and partners will discover the limitless potential of silicon implementation for delivering the right technology at the right time."

NVIDIA (NASDAQ: NVDA) today reported record revenue for the second quarter ended August 1, 2021, of $6.51 billion, up 68 percent from a year earlier and up 15 percent from the previous quarter, with record revenue from the company's Gaming, Data Center and Professional Visualization platforms. GAAP earnings per diluted share for the quarter were $0.94, up 276 percent from a year ago and up 24 percent from the previous quarter. Non-GAAP earnings per diluted share were $1.04, up 89 percent from a year ago and up 14 percent from the previous quarter.

"NVIDIA's pioneering work in accelerated computing continues to advance graphics, scientific computing and AI," said Jensen Huang, founder and CEO of NVIDIA. "Enabled by the NVIDIA platform, developers are creating the most impactful technologies of our time - from natural language understanding and recommender systems, to autonomous vehicles and logistic centers, to digital biology and climate science, to metaverse worlds that obey the laws of physics.

During the IEEE International Solid-State Circuits Conference (ISSCC), Samsung Foundry has presented a new step towards smaller and more efficient nodes. The new chip that was presented is a 256 Gb memory chip, based on SRAM technology. However, all of that doesn't sound interesting, until we mention the technology that is behind it. Samsung has for the first time manufactured a chip using the company's gate-all-around field-effect transistor (GAAFET) technology on the 3 nm semiconductor node. Formally, there are two types of GAAFET technology: the regular GAAFET that uses nanowires as fins of the transistor, and MBCFET (multi-bridge channel FET) that uses thicker fins that come in a form of a nanosheet.

Samsung has demonstrated the first SRAM chip that uses MBCFET technology today. The chip in question is a 256 Gb chip with an area of 56 mm². The achievement Samsung is proud of is that the chip uses 230 mV less power for writes, compared to the standard approach, as the MBCFET transistors allow the company to have many different power-saving techniques. The new 3 nm MBCFET process is expected to get into high-volume production sometime in 2022, however, we are yet to see demos of logic chips besides SRAM like we see today. Nonetheless, even the demonstration of SRAM is big progress, and we are eager to see what the company manages to build with the new technology.

Samsung has been one of the world's biggest foundries and one of three big players still left in the leading-edge semiconductor process development and manufacturing. However, the Korean giant is always seeking ways to improve its offerings, especially for Western customers. Today, it is reported that Samsung has reportedly talked with regulators in Texas, New York, and Arizona about building a $17 billion silicon manufacturing facility in the United States. The supposed factory is going to be located near Austin, Texas, and is supposed to offer around 1800 jobs. If the deal is approved and Samsung manages to complete the project on time, the factory is supposed to start mass production in Q4 of 2023.

What process is Samsung going to manufacture in the new fab? Well, current speculations are pointing out to the 3 nm node, with Samsung's special GAAFET (Gate All Around FET) technology tied to the new node. The fab is also expected to make use of extreme ultraviolet (EUV) lithography for manufacturing. Samsung already has a facility in the US called S2, however, that will not be upgraded as it is still serving a lot of clients. Instead, the company will build new facilities to accommodate the demand for newer nodes. It is important to note that Samsung will not do any R&D work in the new fab, and the company will only manufacture the silicon there.

The Taiwan Economic Daily claims that TSMC has achieved a major internal breakthrough for the eventual rollout of 2 nm fabrication process technology. According to the publication, this breakthrough has turned TSMC even more optimistic towards a 2023 rollout of 2 nm risk production - which is all the more impressive considering reports that TSMC will be leaving the FinFet realm for a new multi-bridge channel field effect transistor (MBCFET) architecture - itself based on the Gate-All-Around (GAA) technology. This breakthrough comes one year after TSMC put together an internal team whose aim was to pave the way for 2 nm deployment.

MBCFET expands on the GAAFET architecture by taking the Nanowire field-effect transistor and expanding it so that it becomes a Nanosheet. The main idea is to make the field-effect transistor three-dimensional. This new complementary metal oxide semiconductor transistor can improve circuit control and reduce leakage current. This design philosophy is not exclusive to TSMC - Samsung has plans to deploy a variant of this design on their 3 nm process technology. And as has been the norm, further reductions in chip fabrication scale come at hefty costs - while the development cost for 5 nm has already achieved $476M in cost, Samsung reports that their 3 nm GAA technology will cost in excess of $500M - and 2 nm, naturally, will come in even costlier than that.