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Asgard AN3+ 512 GB

512 GB
Capacity
STAR1000P
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Adrenaline
Back
Package
Adrenaline
Package
PCB Front
Adrenaline
PCB Front
PCB Back
Adrenaline
PCB Back
DRAM
Adrenaline
DRAM
Flash
Adrenaline
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Asgard AN3+ is a solid-state drive in the M.2 2280 form factor, launched in 2018. It is available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Asgard AN3+ interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the STAR1000P Europa+ from Starblaze, a DRAM cache chip is available. Asgard has installed 64-layer TLC NAND flash on the AN3+, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 167 GB, once it is full, writes complete at 200 MB/s. The AN3+ is rated for sequential read speeds of up to 2,800 MB/s and 2,000 MB/s write; random IOPS reach up to 750K for reads and 600K for writes.
At its launch, the SSD was priced at 86 USD. The warranty length is set to five years, which is an excellent warranty period. Asgard guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2018
Price at Launch: 86 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Starblaze
Name: STAR1000P Europa+
Architecture: Synopsys DesignWare 32-bit ARC HS38
Core Count: Dual-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Part Number: TH58TFT0V23BA8C
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 132 mm²
(3.9 Gbit/mm²)
Dies per Chip: 2 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: NANYA NT5AD256M16D4-HR
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 2,800 MB/s
Sequential Write: 2,000 MB/s
Random Read: 750,000 IOPS
Random Write: 600,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 167 GB
(dynamic only)
Speed when Cache Exhausted: approx. 200 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

This controller can actually be Dual Core or Quad core depending on the manufacturer since this controller is based on the Synopsys ARC @HS38 architecture.

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)
tPROG withoug Overhead: ~ 695µs (Avg) (~ 46 MB/s per die)
tPROG w/ ~25% Overhead: ~ 927µs (Avg) (~ 34.5 MB/s per die)

Jun 3rd, 2024 06:30 EDT change timezone

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