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Biwin X570 4 TB

4 TB
Capacity
MAP1806A
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor

This SSD is not released yet.

Data on this page may change in the future.

NAND Die
NAND Die
The Biwin X570 will be a solid-state drive in the M.2 2280 form factor, that is expected to launch in 2024. It is available in capacities ranging from 2 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Biwin X570 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the MAP1806A-F1C from MaxioTech. Biwin has installed 232-layer TLC NAND flash on the X570, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The X570 is rated for sequential read speeds of up to 14,500 MB/s and 14,000 MB/s write.
We have no information regarding the price at release. Biwin guarantees an endurance rating of 4000 TBW, a very low value compared to other SSDs. New information will be added to this page as soon as it becomes available.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 2 TB 4 TB
Overprovisioning: 370.7 GB / 10.0 %
Production: Unreleased
Released: 2024
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Manufacturer: MaxioTech
Name: MAP1806A-F1C
Architecture: ARM 32-bit
Foundry: TSMC FinFET
Process: 6 nm
Flash Channels: 8 @ 3,600 MT/s
Chip Enables: 4
Controller Features: DRAM

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 8 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
2500 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type and Size: Unknown

Performance

Sequential Read: 14,500 MB/s
Sequential Write: 14,000 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 4000 TBW
Warranty: Unknown
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Jun 27th, 2024 20:51 EDT change timezone

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