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Crucial P3 Plus 1 TB (Micron B58R FortisFlash)

1 TB
Capacity
Phison E21T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Crucial P3 Plus is a solid-state drive in the M.2 2280 form factor, launched on May 25th, 2022. It is available in capacities ranging from 500 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Crucial P3 Plus interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5021-E21T from Phison, a DRAM cache is not available. Crucial has installed 232-layer TLC NAND flash on the P3 Plus, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 250 GB. Copying data out of the SLC cache (folding) completes at 100 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The P3 Plus is rated for sequential read speeds of up to 5,000 MB/s and 3,600 MB/s write.
At its launch, the SSD was priced at 100 USD. The warranty length is set to five years, which is an excellent warranty period. Crucial guarantees an endurance rating of 220 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: May 25th, 2022
Price at Launch: 100 USD
Part Number: CT1000P3PSSD8
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5021-E21T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Rebranded: MT29F4T08GMLCEJ4-QA:C
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 4 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 3,600 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 220 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: approx. 250 GB
(dynamic only)
Cache Folding Speed: 100 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology running at 980 ~ 1000 MHz (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficiency

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Aug 28th, 2024 01:13 EDT change timezone

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