Capacity: | 1 TB (1024 GB) |
---|---|
Variants: | 256 GB 512 GB 1 TB |
Overprovisioning: | 70.3 GB / 7.4 % |
Production: | Active |
Released: | May 25th, 2020 |
Price at Launch: | 139 USD |
Part Number: | LNM700-1TRBNA |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
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Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: |
1.3 W (Idle) 4.7 W (Avg) 6.6 W (Max) |
Manufacturer: | Marvell |
---|---|
Name: | 88SS1092 Eldora Plus |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Triple-Core |
Frequency: | 500 MHz |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 8 @ 533 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
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Name: | V-NAND V4 |
Rebranded: | (Rebranded by Lexar/LongSys) |
Type: | TLC |
Technology: | 64-layer |
Speed: | 1000 MT/s |
Capacity: | 2 chips @ 4 Tbit |
Toggle: | 3.0 |
Topology: | Charge Trap |
Process: | 20 nm |
Die Size: | 128 mm² (4.0 Gbit/mm²) |
Dies per Chip: | 8 dies @ 512 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
72 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 700 µs |
Block Erase Time (tBERS): | 3.5 ms |
Endurance: (up to) |
7000 P/E Cycles
(20000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 768 Pages |
Plane Size: | 5748 Blocks |
Type: | LPDDR3-1866 CL13 |
---|---|
Name: | NT6CL256T32CM-H1 |
Capacity: |
1024 MB
(1x 1024 MB) |
Organization: | 8Gx32 |
Sequential Read: | 3,500 MB/s |
---|---|
Sequential Write: | 2,000 MB/s |
Random Read: | 293,000 IOPS |
Random Write: | 272,000 IOPS |
Endurance: | 600 TBW |
Warranty: | 5 Years |
MTBF: | 3.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 360 GB
(dynamic only) |
Speed when Cache Exhausted: | approx. 580 MB/s |
TRIM: | Yes |
---|---|
SMART: | No |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:TLC Write speeds post pSLC Cache: ~ 580 MB/s (Avg) |