Capacity: | 1.9 TB (1920 GB) |
---|---|
Variants: | 1.9 TB 3.8 TB |
Overprovisioning: | 259.9 GB / 14.5 % |
Production: | End-of-life |
Released: | Unknown |
Part Number: | P5510DS0192T00 |
Market: | Enterprise |
Form Factor: | U.2 |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: | Unknown |
Manufacturer: | Microchip Flashtech Microsemi |
---|---|
Name: | PM8632A1-F3EI NVMe2108HC Harding |
Architecture: | RISC Tensilica Xtensa 32-bit |
Core Count: | 6-Core |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 8 @ 533 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Toshiba |
---|---|
Name: | BiCS3 |
Type: | TLC |
Technology: | 64-layer |
Speed: | 533 MT/s |
Capacity: | 16 chips @ 1 Tbit |
ONFI: | 3.2 |
Toggle: | 2.0 |
Topology: | Charge Trap |
Process: | 19 nm |
Dies per Chip: | 4 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 2 |
Read Time (tR): | 80 µs |
Program Time (tProg): | 695 µs |
Die Read Speed: | 400 MB/s |
Die Write Speed: | 46 MB/s |
Endurance: (up to) |
3000 P/E Cycles
(30000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 768 Pages |
Plane Size: | 1478 Blocks |
Type: | DDR4-2666 CL16 |
---|---|
Name: | Micron |
Capacity: |
2048 MB
(4x 512 MB) |
Organization: | 4Gx8 |
Sequential Read: | 3,400 MB/s |
---|---|
Sequential Write: | 1,700 MB/s |
Random Read: | 510,000 IOPS |
Random Write: | 60,000 IOPS |
Endurance: | 3504 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 1.0 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:Read latency: |