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Micron 2550 512 GB

512 GB
Capacity
Phison E21T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Micron 2550 is a solid-state drive in the M.2 2280 form factor, launched on December 6th, 2022. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Micron 2550 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5021-E21T from Phison, a DRAM cache is not available. Micron has installed 232-layer TLC NAND flash on the 2550, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 2550 is rated for sequential read speeds of up to 5,000 MB/s and 4,000 MB/s write; random IOPS reach up to 500K for reads and 600K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Micron guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Dec 6th, 2022
Part Number: MTFDKBA512GE-1BK1AAB
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.15 W (Idle)
Unknown (Avg)
5.5 W (Max)

Controller

Manufacturer: Phison
Name: PS5021-E21T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 1 chip @ 4 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,000 MB/s
Random Read: 500,000 IOPS
Random Write: 600,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology running at 980 ~ 1000 MHz (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficiency

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Nov 13th, 2024 19:15 EST change timezone

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