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Micron 2650 512 GB

512 GB
Capacity
Phison E27T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Micron 2650 is a solid-state drive in the M.2 2280 form factor, launched on July 30th, 2024. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Micron 2650 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5027-E27T from Phison, a DRAM cache is not available. Micron has installed 276-layer TLC NAND flash on the 2650, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 2650 is rated for sequential read speeds of up to 7,000 MB/s and 4,800 MB/s write; random IO reaches 740K IOPS for read and 1000K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Micron guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Jul 30th, 2024
Part Number: MTFDKBA512TGD-1BK1A MTFDKBA512TGD-1BK15
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: Unknown
Power Draw: Unknown (Idle)
Unknown (Avg)
6.1 W (Max)

Controller

Manufacturer: Phison
Name: PS5027-E27T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,200 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 4 @ 3,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B68S FortisFlash
Type: TLC
Technology: 276-layer
Speed: 3600 MT/s
Capacity: 1 chip @ 4 Tbit
ONFI: 5.1
Topology: Charge Trap
Die Size: 49 mm²
(20.9 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Read Time (tR): 32 µs
Program Time (tProg): 320 µs
Die Write Speed: 300 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 4,800 MB/s
Random Read: 740,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

Main cores running at 1.2GHz while the ECC engine runs at 600 MHz

Aug 28th, 2024 01:18 EDT change timezone

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