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Orico J-10 2 TB

2 TB
Capacity
RTS5765DL
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Orico J-10 is a solid-state drive in the M.2 2280 form factor. It is available in capacities ranging from 512 GB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Orico J-10 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the RTS5765DL from Realtek, a DRAM cache is not available. Orico has installed 144-layer QLC NAND flash on the J-10, the flash chips are made by Intel. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 500 GB. The J-10 is rated for sequential read speeds of up to 3,100 MB/s and 1,600 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Orico guarantees an endurance rating of 600 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 512 GB 1 TB 2 TB 4 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Unknown
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Realtek
Name: RTS5765DL
Flash Channels: 4 @ 1,200 MT/s
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Intel
Name: N38A
Type: QLC
Technology: 144-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 4 Tbit
Topology: Replacement Gate
Die Size: 80 mm²
(12.8 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 3
Word Lines: 161 per NAND String
89.4% Vertical Efficiency
Read Time (tR): 85 µs
Program Time (tProg): 1630 µs
Block Erase Time (tBERS): 35 ms
Die Read Speed: 752 MB/s
Die Write Speed: 40 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 9216 Pages
Plane Size: 1032 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,100 MB/s
Sequential Write: 1,600 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 600 TBW
Warranty: 3 Years
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 500 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Block size is 48MB
Block Erase Time (tBERS): Maximum is 35 ms

Jun 30th, 2024 08:02 EDT change timezone

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