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Orico J-20 1 TB

1 TB
Capacity
RTS5772DL
Controller
QLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Orico J-20 is a solid-state drive in the M.2 2280 form factor, launched in 2023. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Orico J-20 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the RTS5772DL from Realtek, a DRAM cache is not available. Orico has installed 144-layer QLC NAND flash on the J-20, the flash chips are made by Intel. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 250 GB. Copying data out of the SLC cache (folding) completes at 150 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The J-20 is rated for sequential read speeds of up to 5,000 MB/s and 4,700 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Orico guarantees an endurance rating of 300 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2023
Part Number: Orico J-20-1TB-GD-BP
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Realtek
Name: RTS5772DL
Architecture: ARM
Foundry: TSMC
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Intel
Name: N38A
Part Number: PF29F02T2AMCQK1
Type: QLC
Technology: 144-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 2 Tbit
Topology: Replacement Gate
Die Size: 80 mm²
(12.8 Gbit/mm²)
Dies per Chip: 2 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 3
Word Lines: 161 per NAND String
89.4% Vertical Efficiency
Read Time (tR): 85 µs
Program Time (tProg): 1630 µs
Block Erase Time (tBERS): 35 ms
Die Read Speed: 752 MB/s
Die Write Speed: 40 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 9216 Pages
Plane Size: 1032 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,700 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 300 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 250 GB
(dynamic only)
Cache Folding Speed: 150 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

NAND Die:

Block size is 48MB
Block Erase Time (tBERS): Maximum is 35 ms

Jun 29th, 2024 16:31 EDT change timezone

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