Capacity: | 61 TB (61440 GB) |
---|---|
Overprovisioning: | Unknown |
Production: | Active |
Released: | Jul 5th, 2024 |
Part Number: | Unknown |
Market: | Enterprise |
Form Factor: | U.2 |
---|---|
Interface: | PCIe 5.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: | Unknown |
Manufacturer: | Samsung |
---|---|
Name: | ELAN (S4LV006) |
Architecture: | ARM 32-bit Cortex-M0 |
Foundry: | Samsung FinFET |
Process: | 8 nm |
Flash Channels: | 16 @ 1,200 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V7 |
Type: | QLC |
Technology: | 176-layer |
Speed: | 1600 MT/s |
Capacity: | Unknown |
Toggle: | 4.0 |
Topology: | Charge Trap |
Die Size: | 67 mm² (15.3 Gbit/mm²) |
Planes per Die: | 4 |
Decks per Die: | 1 |
Word Lines: |
191 per NAND String
92.1% Vertical Efficiency |
Read Time (tR): | 85 µs |
Program Time (tProg): | 1600 µs |
Page Size: | 16 KB |
Type and Size: | Unknown |
---|
Sequential Read: | 7,200 MB/s |
---|---|
Sequential Write: | 2,000 MB/s |
Random Read: | 1,600,000 IOPS |
Random Write: | 110,000 IOPS |
Endurance: | 29153 TBW |
Warranty: | 5 Years |
MTBF: | 2.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:Upper Deck: 101 Gates |