Report an Error

Silicon Motion SM2508 Engineering Sample 2 TB

2 TB
Capacity
SM2508
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
NAND Die
NAND Die
The Silicon Motion SM2508 Engineering Sample is a solid-state drive in the M.2 2280 form factor, launched on August 8th, 2024. It is only available in the 2 TB capacity listed on this page. With the rest of the system, the Silicon Motion SM2508 Engineering Sample interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the SM2508 from Silicon Motion, a DRAM cache chip is available. Silicon Motion has installed 232-layer TLC NAND flash on the SM2508 Engineering Sample, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The SM2508 Engineering Sample is rated for sequential read speeds of up to 14,500 MB/s and 14,000 MB/s write; random IOPS reach up to 2500K for reads and 2500K for writes.
The SSD's price at launch is unknown. The TBW rating for the Silicon Motion SM2508 Engineering Sample 2 TB is unknown, too.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Aug 8th, 2024
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown (Idle)
Unknown (Avg)
7.0 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2508
Architecture: ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-M0
Core Count: 5-Core
Frequency: 1,250 MHz
Foundry: TSMC FinFET
Process: 6 nm
Flash Channels: 8 @ 3,600 MT/s
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: Unknown
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: LPDDR4
Capacity: Unknown

Performance

Sequential Read: 14,500 MB/s
Sequential Write: 14,000 MB/s
Random Read: 2,500,000 IOPS
Random Write: 2,500,000 IOPS
Endurance: Unknown
Warranty: Unknown
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

This controller features a Quad-core Cortex-R8 running at 1.25GHz as primary cores, while having a Cortex-M0 as a secondary core for peripheral.

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Aug 28th, 2024 01:18 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts