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Silicon Power XS70 2 TB (E18 + Micron B47R)

2 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Tom's Hardware
Back
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Silicon Power XS70 is a solid-state drive in the M.2 2280 form factor, launched on January 16th, 2022. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Silicon Power XS70 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Silicon Power has installed 176-layer TLC NAND flash on the XS70, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 220 GB, once it is full, writes complete at 4000 MB/s. Copying data out of the SLC cache (folding) completes at 2000 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The XS70 is rated for sequential read speeds of up to 7,300 MB/s and 6,800 MB/s write; random IO reaches 0K IOPS for read and 0K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Silicon Power guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB 4 TB
Hardware Versions:
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jan 16th, 2022
Part Number: SP02KGBP44XS7005
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.83 W (Idle)
4.5 W (Avg)
7.8 W (Max)

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Part Number: IA7BG94AYA
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 8 chips @ 2 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK Hynix H5AN8G6NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,300 MB/s
Sequential Write: 6,800 MB/s
Random Read: 917 IOPS
Random Write: 936 IOPS
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 220 GB
(dynamic only)
Speed when Cache Exhausted: approx. 4000 MB/s
Cache Folding Speed: 2000 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

TLC Native Write speeds: 4.0GB/s
Write speeds with Copyback: ~ 2.0 GB/s

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Jun 3rd, 2024 06:30 EDT change timezone

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