Capacity: | 1 TB (1000 GB) |
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Variants: | 500 GB 1 TB 2 TB |
Overprovisioning: | 92.7 GB / 10.0 % |
Production: | Active |
Released: | Aug 17th, 2021 |
Price at Launch: | 135 USD |
Part Number: | SHGP31-1000GM-2 |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
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Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: |
0.36 W (Idle) 2.4 W (Avg) 4.1 W (Max) |
Manufacturer: | SK Hynix |
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Name: | Cepheus |
Architecture: | ARM 32-bit Cortex-R |
Core Count: | Dual-Core |
Foundry: | TSMC FinFET |
Process: | 12 nm |
Flash Channels: | 4 @ 1,400 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | SK Hynix |
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Name: | V6 |
Part Number: | H25T2TB88E-X259 |
Type: | TLC |
Technology: | 128-layer |
Speed: | 1400 MT/s |
Capacity: | 2 chips @ 4 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Die Size: | 63 mm² (8.1 Gbit/mm²) |
Dies per Chip: | 8 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
147 per NAND String
87.1% Vertical Efficiency |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 1536 Pages |
Plane Size: | 722 Blocks |
Type: | LPDDR4-2133 |
---|---|
Name: | SK Hynix H9HCNNNFBMALPR-NEE |
Capacity: |
1024 MB
(1x 1024 MB) |
Sequential Read: | 3,500 MB/s |
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Sequential Write: | 3,200 MB/s |
Random Read: | 570,000 IOPS |
Random Write: | 600,000 IOPS |
Endurance: | 750 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: |
approx. 92 GB
(86 GB Dynamic + 6 GB Static) |
Speed when Cache Exhausted: | approx. 1475 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Controller:Multi-core ARM-based controller NAND Die:Each die has 7 SGSs with 3 SGDs. |