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SK Hynix PC601 1 TB

1 TB
Capacity
Cepheus Plus
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Front
DRAM
DRAM
Flash
Flash
Flash 2
Flash 2
The SK Hynix PC601 was a solid-state drive in the M.2 2280 form factor, launched on May 30th, 2019, that is no longer in production. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the SK Hynix PC601 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Cepheus Plus YCN34PTA0FR from SK Hynix, a DRAM cache chip is available. SK Hynix has installed 48-layer TLC NAND flash on the PC601, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The PC601 is rated for sequential read speeds of up to 3,400 MB/s and 2,500 MB/s write; random IOPS reach up to 510K for reads and 440K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. The TBW rating for the SK Hynix PC601 1 TB is unknown, too.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Overprovisioning: 70.3 GB / 7.4 %
Production: End-of-life
Released: May 30th, 2019
Part Number: HFS001TD9TNG-L5B0B
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: SK Hynix
Name: Cepheus Plus YCN34PTA0FR
Architecture: ARM 32-bit Cortex-R
Foundry: TSMC FinFET
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V3
Part Number: H27Q4T8LQA3R-BDH
Type: TLC
Technology: 48-layer
Speed: 533 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 3.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 4
Read Time (tR): 90 µs
Program Time (tProg): 1100 µs
Block Erase Time (tBERS): 10 ms
Die Read Speed: 355 MB/s
Die Write Speed: 29 MB/s
Page Size: 8 KB
Block Size: 1152 Pages
Plane Size: 911 Blocks

DRAM Cache

Type: LPDDR4-3733
Name: SK Hynix H9HCNNN8KUMLHR-NME
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 2,500 MB/s
Random Read: 510,000 IOPS
Random Write: 440,000 IOPS
Endurance: Unknown
Warranty: 5 Years
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

Multi-core ARM-based controller

NAND Die:

DQ performance
Read cycle time (tRC): 3.75ns or 5ns or 10ns
Read/Write throughput per pin: 533Mbps or 400Mbps or 200Mbps

In SLC Mode:
tREAD (typ / max): 50µs / 70µs
tPROG (typ / max): 400µs / 500µs ( ~ 80 MB/s)

Power consumption:
‐ Page Read : 50 mA (max.)
‐ Page Program : 50 mA (max.)
‐ DQ Burst Read (ICC4R) : 80 mA (max.)
‐ DQ Burst Program (ICC4W) : 80 mA (max.)
‐ BUS Idle : 10 mA (max.)
‐ Standby : 50 uA (max.)

Package ‐ 152Ball fBGA , Size : 14x18 mm2 ‐ 316Ball fBGA, Size : 14x18 mm2
Nov 26th, 2024 13:45 EST change timezone

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