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Solidigm D7-PS1030 1.6 TB

1.6 TB
Capacity
Atomos Prime
Controller
TLC
Flash
PCIe 5.0 x4
Interface
U.2
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Solidigm D7-PS1030 is a solid-state drive in the U.2 form factor, launched on August 6th, 2024. It is available in capacities ranging from 1.6 TB to 13 TB. This page reports specifications for the 1.6 TB variant. With the rest of the system, the Solidigm D7-PS1030 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the Atomos Prime (ACNT08M) from SK Hynix, a DRAM cache chip is available. Solidigm has installed 176-layer TLC NAND flash on the D7-PS1030, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The D7-PS1030 is rated for sequential read speeds of up to 14,500 MB/s and 4,100 MB/s write; random IOPS reach up to 2350K for reads and 350K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Solidigm guarantees an endurance rating of 8760 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 1.6 TB (1600 GB)
Variants: 1.6 TB 3 TB 6 TB 13 TB
Overprovisioning: 557.9 GB / 37.4 %
Production: Active
Released: Aug 6th, 2024
Part Number: Unknown
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: 5.0 W (Idle)
17.0 W (Avg)
18.0 W (Max)

Controller

Manufacturer: SK Hynix
Name: Atomos Prime (ACNT08M)
Architecture: ARM 32-bit Cortex-R8 (without Neon)
Foundry: TSMC
Process: 7 nm
Flash Channels: 16 @ 1,600 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: Unknown
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: DDR4
Capacity: Unknown

Performance

Sequential Read: 14,500 MB/s
Sequential Write: 4,100 MB/s
Random Read: 2,350,000 IOPS
Random Write: 350,000 IOPS
Endurance: 8760 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 3.0
SLC Write Cache: Yes
Endurance by Solidigm:12,300 TBW

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size
Aug 28th, 2024 01:19 EDT change timezone

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