Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 250 GB |
---|---|
Variants: | 250 GB 500 GB 1 TB |
Overprovisioning: | 23.2 GB / 10.0 % |
Production: | End-of-life |
Released: | 2019 |
Price at Launch: | 53 USD |
Part Number: | T253TM250G3C302 |
Market: | Consumer |
Form Factor: | 2.5" |
---|---|
Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: | Unknown |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2258G |
Architecture: | ARC 32-bit |
Core Count: | Single-Core |
Frequency: | 400 MHz |
Process: | 40 nm |
Flash Channels: | 4 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V4 |
Rebranded: | CH7M9701 (Rebranded by Teamgroup) |
Type: | TLC |
Technology: | 64-layer |
Speed: | 1000 MT/s |
Capacity: | 1 chip @ 2 Tbit |
Topology: | Charge Trap |
Dies per Chip: | 8 dies @ 256 Gbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
72 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 700 µs |
Block Erase Time (tBERS): | 3.5 ms |
Endurance: (up to) |
7000 P/E Cycles
(20000 in SLC Mode) |
Page Size: | 16 KB |
Type: | DDR3-1600 CL11 |
---|---|
Name: | SAMSUNG K4B2G1646Q-BCK0 |
Capacity: |
256 MB
(1x 256 MB) |
Organization: | 2Gx16 |
Sequential Read: | 560 MB/s |
---|---|
Sequential Write: | 500 MB/s |
Random Read: | 90,000 IOPS |
Random Write: | 75,000 IOPS |
Endurance: | 200 TBW |
Warranty: | 3 Years |
MTBF: | 1.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.7 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | Yes |
PS5 Compatible: | No |
This section lists other SSDs in our database using the exact same hardware components |
Drive:This drive features a small Static pSLC Cache in order to help with endurance, performance and reliability. |