Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 500 GB |
---|---|
Variants: | 500 GB 1 TB |
Overprovisioning: | 46.3 GB / 10.0 % |
Production: | Active |
Released: | 2021 |
Part Number: | TS500GMTE240S |
Market: | Consumer |
Form Factor: | M.2 2280 (Single-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: | Unknown |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2267 |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Dual-Core |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 4 |
Chip Enables: | 8 |
Controller Features: |
HMB
|
Manufacturer: | Micron |
---|---|
Name: | B27B FortisFlash |
Type: | TLC |
Technology: | 96-layer |
Speed: | 533 MT/s .. 1200 MT/s |
Capacity: | 2 chips @ 2 Tbit |
ONFI: | 4.1 |
Topology: | Floating Gate |
Dies per Chip: | 4 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
108 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 87 µs |
Program Time (tProg): | 800 µs |
Block Erase Time (tBERS): | 15 ms |
Die Write Speed: | 84 MB/s |
Endurance: (up to) |
3000 P/E Cycles
(40000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 3456 Pages |
Plane Size: | 338 Blocks |
Type: | DDR4-2666 |
---|---|
Capacity: |
512 MB
(1x 512 MB) |
Sequential Read: | 3,800 MB/s |
---|---|
Sequential Write: | 2,800 MB/s |
Random Read: | 190,000 IOPS |
Random Write: | 540,000 IOPS |
Endurance: | 850 TBW |
Warranty: | 5 Years |
MTBF: | 5.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.9 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
NAND Die:tPROG - 800 µs (withouh Vpp) |