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Transcend SSD370S 512 GB (SM2242EN + Micron 16nm)

512 GB
Capacity
SM2246EN
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Tom's Hardware
Package
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Transcend SSD370S was a solid-state drive in the 2.5" form factor, launched on April 20th, 2015, that is no longer in production. It was available in capacities ranging from 32 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Transcend SSD370S interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2246EN from Silicon Motion, a DRAM cache chip is available. Transcend has installed MLC NAND flash on the SSD370S, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The SSD370S is rated for sequential read speeds of up to 560 MB/s and 460 MB/s write; random IO reaches 75K IOPS for read and 75K for writes.
At its launch, the SSD was priced at 176 USD. The warranty length is set to five years, which is an excellent warranty period. Transcend guarantees an endurance rating of 550 TBW, a good value.

Solid-State-Drive

Capacity: 512 GB
Variants: 32 GB 64 GB 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: Apr 20th, 2015
Price at Launch: 176 USD
Part Number: TS512GSSD370S
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.32 W (Idle)
1.4 W (Avg)
3.2 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2246EN
Architecture: ARC 32-bit
Core Count: Single-Core
Frequency: 400 MHz
Process: 55 nm
Flash Channels: 4
Chip Enables: 8

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Rebranded: TFGMM9T-1D06 (Rebranded)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: 16 chips @ 256 Gbit
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Dies per Chip: 2 dies @ 128 Gbit
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: Samsung K4B4G1646D-BYK0
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 460 MB/s
Random Read: 75,000 IOPS
Random Write: 75,000 IOPS
Endurance: 550 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)

Jun 3rd, 2024 05:10 EDT change timezone

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