Tuesday, April 8th 2014
Samsung Accelerates Ramp Up of DDR4 Production
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, said today that it is accelerating its production ramp up of DDR4 memory modules to accommodate an anticipated strong market demand along with the approaching introduction of the new Intel Xeon processor E5-2600 v3 product family. DDR4 is the most advanced memory for server and high-performance computing applications.
"At Samsung, we are taking the lead in readying the DDR4 market to coincide with the introduction of the next-generation Intel Xeon processor E5-2600 v3 product family, and plan to contribute to creating a bigger market for DRAM in the second half of 2014," said Jim Elliott, corporate vice president, Memory Marketing, Samsung Semiconductor, Inc. "We will continue to introduce high-density DDR4 modules for global OEMs that will facilitate the launch of next-generation enterprise servers and will maximize IT investment efficiency."
"Samsung's new 20 nm process technology will play a major role in driving DDR4 adoption in conjunction with the launch of the future Intel Xeon processor E5-2600 v3 product family," said Geof Findley, director, PMO Memory Enabling & Applications Engineering, Intel Corporation. "The integration of Samsung DDR4 memory as part of future Intel Xeon processor E5-2600 v3-based systems will drive higher performance and lower power consumption in the enterprise and data center markets."
Samsung's DDR4 memory provides significant benefits to server manufacturers including lower power consumption, reliability and improved system performance with current speeds up to 2400 megabits per second (Mbps).
Samsung is ramping production of its entire family of 4 Gb-based DDR4 modules in preparation for future systems based on the Intel's Xeon processor E5-2600 v3 product family. They include DDR4 RDIMMs, LRDIMMs, and ECC SODIMMs, as well as x4, x8 and x16 DDR4 chips. Later this year, Samsung will also facilitate a transition to 8 Gb 32 GB DDR4 modules for the high density server market.
"The industry-leading 20 nm process from Samsung is a compelling advancement in the DDR4 market," said Victor de Dios, president, DE DIOS & ASSOCIATES, Newark, CA. "The advantages of lower power, faster performance, and higher densities will enable DDR4 demand to increase seven-fold in 2015 and exceed DDR3 in server platforms," he added.
Samsung DDR4 LRDIMMs, RDIMMs, and ECC SODIMMs are available globally in densities from 8 GB to 64 GB at speeds of 2133 to 2400 Mbps.
"At Samsung, we are taking the lead in readying the DDR4 market to coincide with the introduction of the next-generation Intel Xeon processor E5-2600 v3 product family, and plan to contribute to creating a bigger market for DRAM in the second half of 2014," said Jim Elliott, corporate vice president, Memory Marketing, Samsung Semiconductor, Inc. "We will continue to introduce high-density DDR4 modules for global OEMs that will facilitate the launch of next-generation enterprise servers and will maximize IT investment efficiency."
Samsung's DDR4 memory provides significant benefits to server manufacturers including lower power consumption, reliability and improved system performance with current speeds up to 2400 megabits per second (Mbps).
Samsung is ramping production of its entire family of 4 Gb-based DDR4 modules in preparation for future systems based on the Intel's Xeon processor E5-2600 v3 product family. They include DDR4 RDIMMs, LRDIMMs, and ECC SODIMMs, as well as x4, x8 and x16 DDR4 chips. Later this year, Samsung will also facilitate a transition to 8 Gb 32 GB DDR4 modules for the high density server market.
"The industry-leading 20 nm process from Samsung is a compelling advancement in the DDR4 market," said Victor de Dios, president, DE DIOS & ASSOCIATES, Newark, CA. "The advantages of lower power, faster performance, and higher densities will enable DDR4 demand to increase seven-fold in 2015 and exceed DDR3 in server platforms," he added.
Samsung DDR4 LRDIMMs, RDIMMs, and ECC SODIMMs are available globally in densities from 8 GB to 64 GB at speeds of 2133 to 2400 Mbps.
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