Rambus Inc. (NASDAQ: RMBS), a premier chip and silicon IP provider making data faster and safer, today announced the availability of its new family of state-of-the-art DDR5 server Power Management ICs (PMICs), including an industry-leading extreme current device for high-performance applications. With this new family of server PMICs, Rambus offers module manufacturers a complete DDR5 RDIMM memory interface chipset supporting a broad range of data center use cases.

"Advanced data center workloads like generative AI require the highest bandwidth and capacity server RDIMMs tailored to meet ever-increasing memory needs of a growing data pipeline," said Sean Fan, chief operating officer at Rambus. "With the addition of this new family of server PMICs, we expand our foundational technology and offer customers a comprehensive memory interface chipset that supports multiple DDR5 server platform generations."

According to The Information, in a strategic maneuver to circumvent the constraints imposed by US sanctions, Huawei is accelerating efforts to establish domestic production capabilities for High Bandwidth Memory (HBM) within China. This move addresses the limitations that have hampered the company's advancements in AI and high-performance computing (HPC) sectors. HBM technology plays a pivotal role in enhancing the performance of AI and HPC processors by mitigating memory bandwidth bottlenecks. Recognizing its significance, Huawei has assembled a consortium comprising memory manufacturers backed by the Chinese government and prominent semiconductor companies like Fujian Jinhua Integrated Circuit. This consortium is focused on advancing HBM2 memory technology, which is crucial for Huawei's Ascend-series processors for AI applications.

Huawei's initiative comes at a time when the company faces challenges in accessing HBM from external sources, impacting the availability of its AI processors in the market. Despite facing obstacles such as international regulations restricting the sale of advanced chipmaking equipment to China, Huawei's efforts underscore China's broader push for self-sufficiency in critical technologies essential for AI and supercomputing. By investing in domestic HBM production, Huawei aims to secure a stable supply chain for these vital components, reducing reliance on external suppliers. This strategic shift not only demonstrates Huawei's resilience in navigating geopolitical challenges but also highlights China's determination to strengthen its technological independence in the face of external pressures. As the global tech landscape continues to evolve, Huawei's move to develop homegrown HBM memory could have far-reaching implications for China's AI and HPC capabilities, positioning the country as a significant player in the memory field.

SK hynix showcased its next-generation technologies and strengthened key partnerships at the TSMC 2024 Technology Symposium held in Santa Clara, California on April 24. At the event, the company displayed its industry-leading HBM AI memory solutions and highlighted its collaboration with TSMC involving the host's CoWoS advanced packaging technology.

TSMC, a global semiconductor foundry, invites its major partners to this annual conference in the first half of each year so they can share their new products and technologies. Attending the event under the slogan "Memory, the Power of AI," SK hynix received significant attention for presenting the industry's most powerful AI memory solution, HBM3E. The product has recently demonstrated industry-leading performance, achieving input/output (I/O) transfer speed of up to 10 gigabits per second (Gbps) in an AI system during a performance validation evaluation.

Today, we have the latest round of leaks that suggest that AMD's upcoming RDNA 4 graphics cards, codenamed the "RX 8000-series," might continue to rely on GDDR6 memory modules. According to Kepler on X, the next-generation GPUs from AMD are expected to feature 18 Gbps GDDR6 memory, marking the fourth consecutive RDNA architecture to employ this memory standard. While GDDR6 may not offer the same bandwidth capabilities as the newer GDDR7 standard, this decision does not necessarily imply that RDNA 4 GPUs will be slow performers. AMD's choice to stick with GDDR6 is likely driven by factors such as meeting specific memory bandwidth requirements and cost optimization for PCB designs. However, if the rumor of 18 Gbps GDDR6 memory proves accurate, it would represent a slight step back from the 18-20 Gbps GDDR6 memory used in AMD's current RDNA 3 offerings, such as the RX 7900 XT and RX 7900 XTX GPUs.

AMD's first generation RDNA used GDDR6 with 12-14 Gbps speeds, RDNA 2 came with GDDR6 at 14-18 Gbps, and the current RDNA 3 used 18-20 Gbps GDDR6. Without an increment in memory generation, speeds should stay the same at 18 Gbps. However, it is crucial to remember that leaks should be treated with skepticism, as AMD's final memory choices for RDNA 4 could change before the official launch. The decision to use GDDR6 versus GDDR7 could have significant implications in the upcoming battle between AMD, NVIDIA, and Intel's next-generation GPU architectures. If AMD indeed opts for GDDR6 while NVIDIA pivots to GDDR7 for its "Blackwell" GPUs, it could create a disparity in memory bandwidth performance between the competing products. All three major GPU manufacturers—AMD, NVIDIA, and Intel with its "Battlemage" architecture—are expected to unveil their next-generation offerings in the fall of this year. As we approach these highly anticipated releases, more concrete details on specifications and performance capabilities will emerge, providing a clearer picture of the competitive landscape.

SK hynix Inc. announced today that it has recently signed a memorandum of understanding with TSMC for collaboration to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass-produced from 2026, through this initiative.

SK hynix said the collaboration between the global leader in the AI memory space and TSMC, a top global logic foundry, will lead to more innovations in HBM technology. The collaboration is also expected to enable breakthroughs in memory performance through trilateral collaboration between product design, foundry, and memory provider. The two companies will first focus on improving the performance of the base die that is mounted at the very bottom of the HBM package. HBM is made by stacking a core DRAM die on top of a base die that features TSV technology, and vertically connecting a fixed number of layers in the DRAM stack to the core die with TSV into an HBM package. The base die located at the bottom is connected to the GPU, which controls the HBM.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry's first LPDDR5X DRAM supporting the industry's highest performance of up to 10.7 gigabits-per-second (Gbps). Leveraging 12 nanometer (nm)-class process technology, Samsung has achieved the smallest chip size among existing LPDDRs, solidifying its technological leadership in the low-power DRAM market.

"As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles," said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. "Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers." With the surge in AI applications, on-device AI, which enables direct processing on devices, is becoming increasingly crucial, underscoring the need for low-power, high-performance LPDDR memory.

Corsair today announced it is entering the DDR5 Workstation market with the introduction of a range of WS DDR5 RDIMM memory kits. Engineered to offer uncompromising performance and reliability, these ECC RDIMM kits redefine the capabilities of the newest workstations, and are compatible with the latest 4th Gen Intel Xeon and AMD Ryzen Threadripper 7000 processors.

This new range of memory kits boasts capacities of up to 256 GB, setting a new standard for memory-intensive tasks such as high-resolution media editing, 3D rendering, and AI training. Rigorously tested and carefully screened, these modules surpass JEDEC specifications with tighter timings and higher frequencies, ensuring optimal performance for the most demanding workloads.

V-COLOR Technology Inc. unveiled its latest breakthrough in memory technology, the Manta XFinity series, now boasting speeds of up to DDR5-8600 with XMP profile. This series is already gaining recognition in the overclocking community by securing the 3rd spot on the Memory Frequency ranking in HWBOT, and is ready to create even larger impacts with its enhanced overclocking capabilities. Tested on the new ASRock Phantom Gaming Z790I Lightning Wi-Fi, and PHANTOM GAMING B760I Lightning Wi-Fi with Intel Core 14th Gen CPUs, this advancement ensures unmatched performance and reliability for enthusiasts and professionals alike.

Samsung Electronics America, the leader in advanced memory technology, today introduced the latest iteration of its EVO Select and EVO Plus microSD cards, designed for mobile devices and handheld gaming consoles. The Samsung EVO Select and EVO Plus microSD cards boast increased transfer speeds of up to 160 MB/s, a 23% increase over their predecessors. They offer a turnkey way for everyday users and gamers to add storage space to their devices for content like games, files, photos, and videos.

"With the mobile and handheld gaming market on the rise, we sought to make data transfers on those devices even faster with these updated EVO Select and EVO Plus lines," said Jose Hernandez, Senior Director of Memory Product Marketing at Samsung. "We also heard the need for more space options like a 1 TB memory card for digital files like games, video footage from phones, cameras and drones, photos, and creative designs. With this addition to the lineup, you can be confident you'll have plenty of space, fast speeds and the durability needed to last for years to come."

Introspect Technology, a JEDEC member and a leading manufacturer of test and measurement instruments, announced today that it has shipped the M5512 GDDR7 Memory Test System, the world's first commercial solution for testing JEDEC's newly minted JESD239 Graphics Double Data Rate (GDDR7) SGRAM specification. This category-creating solution enables graphics memory engineers, GPU design engineers, product engineers in both memory and GPU spaces, and system integrators to rapidly bring up new GDDR7 memory devices, debug protocol errors, characterize signal integrity, and perform detailed memory read/write functional stress testing without requiring any other tool.

The GDDR7 specification is the latest industry standard that is aimed at the creation of high-bandwidth and high-capacity memory implementations for graphics processing, artificial intelligence (AI), and AI-intensive networking. Featuring pulse-amplitude modulation (PAM) and an improved signal to noise ratio compared to other PAM4 standards used in networking, the GDDR7 PAM3 modulation technology achieves greater power-efficiency while significantly increasing data transmission bandwidth over constrained electrical channels.

On February 26, 2024, AMD received new research related to an industry-wide DRAM issue documented in "ZENHAMMER: Rowhammering Attacks on AMD Zen-based Platforms" from researchers at ETH Zurich. The research demonstrates performing Rowhammer attacks on DDR4 and DDR5 memory using AMD "Zen" platforms. Given the history around Rowhammer, the researchers do not consider these rowhammering attacks to be a new issue.

Mitigation
AMD continues to assess the researchers' claim of demonstrating Rowhammer bit flips on a DDR5 device for the first time. AMD will provide an update upon completion of its assessment.

Samsung is ready with a GDDR7 memory chip rated at an oddly-specific 28 Gbps. This speed aligns with the reported default memory speeds of next-generation NVIDIA GeForce RTX "Blackwell" GPUs. The Samsung GDDR7 memory chip bearing model number K4VAF325ZC-SC28, pictured below, ticks at 3500 MHz, yielding 28 Gbps (GDDR7-effective) memory speeds, and comes with a density of 16 Gbit (2 GB). This isn't Samsung's only GDDR7 chip at launch, the company also has a 32 Gbps high performance part that it built in hopes that certain high-end SKUs or professional graphics cards may implement it. The 32 Gbps GDDR7 chip, bearing the chip model number K4VAF325ZC-SC32, offers the same 16 Gbit density, but at a higher 4000 MHz clock. The Samsung website part-identification pages for both chips say that the parts are sampling to customers, which is usually just before it enters mass-production, and is marked "shipping."

Without making much noise, AMD lifted the memory overclocking limits of the Radeon RX 7900 GRE graphics card with its latest Adrenalin 24.3.1 WHQL drivers, TechPowerUp found. The changelog is a bit vague and states "The maximum memory tuning limit may be incorrectly reported on AMD Radeon RX 7900 GRE graphics products."—we tested it. The RX 7900 GRE has been around since mid-2023, but gained prominence as the company gave it a global launch in February 2024, to help AMD better compete with the NVIDIA GeForce RTX 4070 Super. Before this, the RX 7900 GRE had started out its lifecycle as a special edition product confined to China, and its designers had ensured that it came with just the right performance positioning that didn't end up disrupting other products in the AMD stack. One of these limitations had to do with the memory overclocking potential, which was probably put in place to ensure that the RX 7900 GRE has a near-identical total board power as the RX 7800 XT.

Shortly after the global launch of the RX 7900 GRE, and responding to drama online, AMD declared the limited memory overclocking range a bug and promised a fix. The overclocking limits are defined in the graphics card VBIOS, so increasing those limits would mean shipping BIOS updates for over a dozen SKUs from all the major vendors, and requiring users to upgrade it by themselves. Such a solution isn't very practical, so AMD implemented a clock limit override in their new drivers, which reprograms the power limits on the GPU during boot-up. Nicely done, good job AMD!

Samsung Electronics showed off its latest graphics memory innovations at GTC, with an exhibit of its new 32 Gbps GDDR7 memory chip. The chip is designed to power the next generation of consumer and professional graphics cards, and some models of NVIDIA's GeForce RTX "Blackwell" generation are expected to implement GDDR7. The chip Samsung showed off at GTC is of the highly relevant 16 Gbit density (2 GB). This is important, as NVIDIA is rumored to keep graphics card memory sizes largely similar to where they currently are, while only focusing on increasing memory speeds.

The Samsung GDDR7 chip shown is capable of its 32 Gbps speed at a DRAM voltage of just 1.1 V, which beats the 1.2 V that's part of JEDEC's GDDR7 specification, which along with other power management innovations specific to Samsung, translates to a 20% improvement in energy efficiency. Although this chip is capable of 32 Gbps, NVIDIA isn't expected to give its first GeForce RTX "Blackwell" graphics cards that speed, and the first SKUs are expected to ship with 28 Gbps GDDR7 memory speeds, which means NVIDIA could run this Samsung chip at a slightly lower voltage, or with better timings. Samsung also made some innovations with the package substrate, which decreases thermal resistance by 70% compared to its GDDR6 chips. Both NVIDIA and AMD are expected to launch their first discrete GPUs implementing GDDR7, in the second half of 2024.

SK hynix Inc. announced today that it has begun volume production of HBM3E, the newest AI memory product with ultra-high performance, for supply to a customer from late March. The company made public its success with the HBM3E development just seven months ago. SK hynix being the first provider of HBM3E, a product with the best performing DRAM chips, extends its earlier success with HBM3. The company expects a successful volume production of HBM3E, along with its experiences also as the industry's first provider of HBM3, to help cement its leadership in the AI memory space.

In order to build a successful AI system that processes a huge amount of data quickly, a semiconductor package should be composed in a way that numerous AI processors and memories are multi-connected. Global big tech companies have been increasingly requiring stronger performance of AI semiconductor and SK hynix expects its HBM3E to be their optimal choice that meets such growing expectations.

MemVerge, a leader in AI-first Big Memory Software, has joined forces with Micron to unveil a groundbreaking solution that leverages intelligent tiering of CXL memory, boosting the performance of large language models (LLMs) by offloading from GPU HBM to CXL memory. This innovative collaboration is being showcased in Micron booth #1030 at GTC, where attendees can witness firsthand the transformative impact of tiered memory on AI workloads.

Charles Fan, CEO and Co-founder of MemVerge, emphasized the critical importance of overcoming the bottleneck of HBM capacity. "Scaling LLM performance cost-effectively means keeping the GPUs fed with data," stated Fan. "Our demo at GTC demonstrates that pools of tiered memory not only drive performance higher but also maximize the utilization of precious GPU resources."

The mid-range AMD Radeon RX 5600 XT is not supposed to have 16 GB of video memory, but the same hardware modders from Brazil behind the recent GeForce RTX 2080 16 GB mod, had other ideas for the card. They have not only increased the memory size to 16 GB through memory chip replacement, but also succeeded in widening its memory bus to 256-bit. The RX 5600 XT was launched in 2018 with 6 GB of 14 Gbps GDDR6 memory over a 192-bit memory interface. The card is cut down from the 7 nm "Navi 10" silicon powering the RX 5700 series, by enabling 36 out of 40 compute units (the same count as the RX 5700), but with a truncated 192-bit memory bus wired to 6 GB of memory (and so 25% lower memory bandwidth).

Paulo Gomes and Ronaldo Buassali pulled off the daring Radeon RX 5600 XT memory mod, which involves not just increasing the memory size from 6 GB to 16 GB, but also widening the memory bus from 192-bit to 256-bit. Since the RX 5600 XT is based on the same "Navi 10" GPU as the RX 5700, custom-design graphics cards tend to reuse PCB designs from the RX 5700 series, and have two vacant memory pads that are sometimes exposed and even balled. The mod involves three key stages—to replace the six 8 Gbit GDDR6 memory chips with eight 16 Gbit ones; to add the required electrical SMDs and VRM components for the two additional memory chips; and lastly, to give the card a modified BIOS that can let it play with the new memory configuration. The "Navi 10" silicon also powers certain Radeon Pro graphics cards with 16 GB of memory using 16 Gbit memory chips, so that could be the starting point for the BIOS mod.

An unusual memory configuration has been spotted on an HONOR MagicBook Pro 16 AI laptop—Golden Pig Upgrade (via Weibo) has shared a brief snippet of footage from a Task Manager session. It confirms that non-binary symmetrical LPDDR5(X) memory is now operating within portable Windows 11 devices, at least in China. Crucial 12 GB capacity DDR5 SODIMM products were uncovered a couple of days ago—at the time, tech enthusiasts wondered whether other options were due in the near future. Recent Geekbench Browser entries have unveiled several "HONOR DRA-XX" Intel Core Ultra-powered devices that sport 24 GB memory configurations.

Manufacturers have been deliberating over new 12 GB, 24 GB, and 48 GB standards for roughly two years—we witnessed the release of commercial desktop products last year. It has taken longer for OEM options to arrive, but HONOR seems to be pioneering a rollout within the slimline laptop segment. VideoCardz has analyzed Golden Pig Upgrade's short clip—they believe that the demoed MagicBook Pro 16 (dual-channel) has a soldered-on: "total capacity of 24 GB based on LPDDR5X technology. Instead of relying on SODIMM modules, this laptop has eight individual memory chips, each with a capacity of 3 GB, totaling 24 GB of LPDDR5X-6400 memory." Upcoming enthusiast-class portable systems—with quadruple SODIMM slot setups—could be fitted with maximum 48 GB capacities. The latest developments signal a pleasing breakaway from traditional laptop system memory limits of 16 and 32 GB.

ASUS today announced BIOS updates that enable support for up to 256 GB of memory on its Intel 700 and 600 series motherboards that use DDR5 modules. Such models with four DIMM slots can now support up to 256 GB of memory, while such models with two DIMM slots can now support up to 128 GB. These enhancements significantly improve multitasking potential, ensuring smooth and seamless computing. AMD AM5 motherboards from ASUS do not require a BIOS update to enable support for up to 256 GB of DDR5 memory modules.

The BIOS updates can be accessed on the ASUS support pages for the models listed below.

Global memory leader Team Group Inc. today announces that its T-CREATE EXPERT DDR5 desktop memory, under its creator brand, has been honored with the prestigious 2024 German iF Design Award, known as the 'Oscars of the Design World.' Among over 10,000 entries from 72 countries, the product stood out and excelled, once again proving the exceptional research and development capabilities of the Team Groupp team, along with its outstanding design aesthetics. By combining ultimate performance with stunning aesthetics, the product meets the diverse needs of creators, receiving recognition from international professional judges in all aspects.

The German iF DESIGN AWARD, one of the four major design awards in the world, is internationally recognized for its unparalleled and innovative significance. Global professional judges select the best designs based on five criteria: Concept, Appearance, Functionality, Differentiation, and Impact. T-CREATE EXPERT DDR5 memory emerged victoriously from this rigorous selection process, outperforming over 10,000 entries and earning this prestigious honor, showcasing Team Group's dedication to crafting products for creators.

A Crucial "CT12G56C46S5" Non-ECC Small Outline Dual In-line Memory Module (SODIMM) is available to pre-order from Amazon UK—the 12 GB capacity product was spotted by everyone's favorite PC hardware sleuth;—momomo_us. March 31 appears to be the official shipping out date—current pricing is £44.99 ($57.50). Additionally, customers have the option to reserve a related 24 GB Kit (2x 12 GB) kit (CT2K12G56C46S5), priced at £87.99 (~$112.36). According to product descriptions, Crucial's upcoming laptop 5600 MHz RAM "can downclock if system specification only supports 5200 MHz or 4800 MHz."

"Non-binary modules" DDR5 modules hit retail last year—we have witnessed a slow trickle out of 24 GB and 48 GB capacity sticks, granting unusual memory configurations on compatible AMD and Intel platforms. The CT12G56C46S5 and CT2K12G56C46S5 are supported by "Core 13th Gen and Ryzen 6000 Series laptop CPUs and above." Crucial's latest DDR5 SODIMM could be the first 12 GB capacity model to reach retail, unless a rival manufacturer sneaks out an equivalent item prior to March 31.

February saw community mods bring resizable BAR support to several older platforms; and now we come across a mod that brings it to some older GPUs. The NVStrapsReBAR mod by terminatorul, which is forked out of the ReBarUEFI mod by xCurio, brings resizable BAR support to NVIDIA GeForce RTX 20-series and GTX 16-series GPUs based on the "Turing" graphics architecture. This mod is intended for power users, and can potentially brick your motherboard. NVIDIA officially implemented resizable BAR support since its RTX 30-series "Ampere" GPUs in response to AMD's Radeon RX 6000 RDNA 2 GPUs implementing the tech under the marketing name Smart Access Memory. While AMD would go on to retroactively enable the tech for even the older RX 5000 series RDNA GPUs, NVIDIA didn't do so for "Turing."

NVStrapsReBAR is a motherboard UEFI firmware mod. It modifies the way your system firmware negotiates BAR size with the GPU on boot. There are only two ways to go about modding a platform to enable resizable BAR on an unsupported platform—by modding the motherboard firmware, or the video BIOS. Signature checks by security processors in NVIDIA GPUs make the video BIOS modding route impossible for most users; thankfully motherboard firmware modding isn't as difficult. There is an extensive documentation by the author to go about using this mod. The author has tested the mod to work with "Turing" GPUs, however, it doesn't work with older NVIDIA GPUs, including "Pascal." Resizable BAR enables the CPU (software) to see video memory as a single contiguously addressable block, rather than through 256 MB apertures.

T-FORCE, the gaming brand under the leading global memory brand Team Group Inc., has launched the highly expected T-FORCE XTREEM ARGB DDR5 Desktop Memory, which not only upgrades both in appearance and performance but also utilizes the exclusive patented IC grading verification technology to create high-speed performance memory modules. The XTREEM ARGB DDR5 allows gamers to enjoy the thrill of gaming while creating an aurora immersive atmosphere with fluid and gentle lighting effects, satisfying consumers' pursuit of robust performance and ultimate aesthetics.

In terms of design, the T-FORCE XTREEM ARGB DDR5 features innovative dual-piece light pipes that emit soft and delicate light movements resembling aurora charm. It also supports various lighting control software [2], creating an extraordinary RGB visual feast and leading players on an unforgettable aurora journey. The product itself features a 2 mm-thick forged aluminium alloy matte black heat spreader, exhibiting both the hardness and durability of basalt and the delicate texture of a black sand beach, perfectly showcasing the ultimate aesthetics of metal craftsmanship and achieving exquisite and unique computer equipment. The XTREEM ARGB DDR5 uses a 10-layer professional anti-interference optimized PCB board and improves the heat dissipation design of the PMIC power management chip to keep performance stable during high-speed data transmission, allowing gamers to enjoy a powerful and high-frame-rate gaming experience.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, is pleased to announce the publication of JESD239 Graphics Double Data Rate (GDDR7) SGRAM. This groundbreaking new memory standard is available for free download from the JEDEC website. JESD239 GDDR7 offers double the bandwidth over GDDR6, reaching up to 192 GB/s per device, and is poised to meet the escalating demand for more memory bandwidth in graphics, gaming, compute, networking and AI applications.

JESD239 GDDR7 is the first JEDEC standard DRAM to use the Pulse Amplitude Modulation (PAM) interface for high frequency operations. Its PAM3 interface improves the signal to noise ratio (SNR) for high frequency operation while enhancing energy efficiency. By using 3 levels (+1, 0, -1) to transmit 3 bits over 2-cycles versus the traditional NRZ (non-return-to-zero) interface transmitting 2 bits over 2-cycles, PAM3 offers higher data transmission rate per cycle resulting in improved performance.

V-COLOR today introduced a series of overclocking memory RDIMM kits for workstations powered by AMD Ryzen Threadripper 7000WX processors on the WRX90 platform that features 8-channel DDR5 memory. The kits include 8 RDIMMs, with densities ranging between 16 GB per RDIMM (128 GB per kit), to 96 GB per RDIMM (768 GB per kit); and comes in speeds ranging between DDR5-5600 and DDR5-7200. The best part? These modules feature AMD EXPO profiles, which should make enabling their advertised speeds as easy as a couple of clicks in the motherboard's UEFI setup program.

An EXPO profile not just applies the kit's memory speed, timings, and voltages, but also several sub-timings and settings that are specific to the AMD platform, which are not found on Intel. V-COLOR has tested its overclocking RDIMMs on popular AMD WRX90 chipset motherboards, namely the ASRock WRX90 WS EVO, ASUS PRO WS WRX90E-SAGE SE, and certain unreleased WRX90 workstation motherboards by Supermicro. Although the RDIMMs lack heatspreaders for the DRAM chips, V-COLOR is including what it calls "micro heatsinks" for the PMIC and RCDs. The RCD in particular is crucial to get Threadrippers to operate at speeds such as DDR5-7200. The kits should be available starting today, with all models available from mid-March. The company didn't reveal pricing.