Lexar, a leading global brand of flash memory solutions, is excited to announce THOR OC DDR5 Desktop Memory. Featuring a complete redesign that pays homage to Thor's hammer, this memory also boasts a durable, solid aluminium heatsink that more than stands up to the challenges of overclocking by providing superior heat dissipation. Lexar THOR OC DDR5 Desktop Memory delivers up to 6000MT/s with timing as low as CL32 for a truly next-gen experience. It features a low-profile form factor that is perfect for compact PC builds. It also supports Intel XMP 3.0 and AMD EXPO overclocking and is compatible with most DDR5 motherboards.

Lexar THOR OC DDR5 Desktop Memory's on-die Error Correction Code (ECC) offers improved stability and reliability while its on-board Power Management IC (PMIC) enhances power efficiency. Another option for PC users is THOR OC DDR4 Desktop Memory. It offers 3200MT/s performance with timing of CL16 and is designed for PC enthusiasts and extreme gamers. It has an aluminium heat spreader with a winged design to keep systems running cool and is compatible with INTEL XMP 2.0 and AMD Ryzen.

Micron Technology, Inc., announced today that it is now shipping production samples of its low-power double data rate 5X (LPDDR5X) memory - the industry's only 1β (1-beta) mobile-optimized memory - for use with Qualcomm Technologies, Inc.'s latest flagship mobile platform, Snapdragon 8 Gen 3. Running at the world's fastest speed grade of 9.6 gigabits per second (Gbps), Micron LPDDR5X provides the mobile ecosystem with the fast performance needed to unlock generative artificial intelligence (AI) at the edge. Enabled by its innovative, industry-leading 1β process node technology, Micron LPDDR5X also delivers advanced power-saving capabilities for mobile users.

"Generative AI is poised to unleash unprecedented productivity, ease of use, and personalization for smartphone users by delivering the power of large language models to flagship mobile phones," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Micron's 1β LPDDR5X combined with Qualcomm Technologies' AI-optimized Snapdragon 8 Gen 3 Mobile Platform empowers smartphone manufacturers with the next-generation performance and power efficiency essential to enabling revolutionary AI technology at the edge."

TrendForce reports that consumer appetite for electronic products took a hit from high inflation, with global DRAM module sales in 2022 reaching US$17.3 billion—a 4.6% YoY decline. Revenue performance varied significantly among module makers due to the different domains they supply.

TrendForce's data indicated that the top five memory suppliers in 2022 accounted for 90% of total sales, with the top ten collectively capturing 96% of global market revenue. Kingston maintained its dominant market share of 78%. Even with a slight revenue dip, it held steadfast to its position as the global leader. Despite poor end-market demand, Kingston's robust brand scale, along with its comprehensive product supply chain, limited its revenue decline to a modest 5.3%, keeping it firmly at the top of market share rankings.

Thanks to the information from Windows Report, we have received numerous details regarding Qualcomm's upcoming Snapdragon Elite X chip for laptops. The Snapdragon Elite X SoC is built on top of Nuvia-derived Oryon cores, which Qualcomm put 12 off in the SoC. While we don't know their base frequencies, the all-core boost reaches 3.8 GHz. The SoC can reach up to 4.3 GHz on single and dual-core boosting. However, the slide notes that this is all pure "big" core configuration of the SoC, so no big.LITTLE design is done. The GPU part of Snapdragon Elite X is still based on Qualcomm's Adreno IP; however, the performance figures are up significantly to reach 4.6 TeraFLOPS of supposedly FP32 single-precision power. Accompanying the CPU and GPU, there are dedicated AI and image processing accelerators, like Hexagon Neural Processing Unit (NPU), which can process 45 trillion operations per second (TOPS). For the camera, the Spectra Image Sensor Processor (ISP) is there to support up to 4K HDR video capture on a dual 36 MP or a single 64 MP camera setup.

The SoC supports LPDDR5X memory running at 8533 MT/s and a maximum capacity of 64 GB. Apparently, the memory controller is an 8-channel one with a 16-bit width and a maximum bandwidth of 136 GB/s. Snapdragon Elite X has PCIe 4.0 and supports UFS 4.0 for outside connection. All of this is packed on a die manufactured by TSMC on a 4 nm node. In addition to marketing excellent performance compared to x86 solutions, Qualcomm also advertises the SoC as power efficient. The slide notes that it uses 1/3 of the power at the same peak PC performance of x86 offerings. It is also interesting to note that the package will support WiFi7 and Bluetooth 5.4. Officially coming in 2024, the Snapdragon Elite X will have to compete with Intel's Meteor Lake and/or Arrow Lake, in addition to AMD Strix Point.

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications—including the cloud, edge devices and automotive vehicles.

Attended by about 600 customers, partners and industry experts, the event served as a platform for Samsung executives to expand on the company's vision for "Memory Reimagined," covering long-term plans to continue its memory technology leadership, outlook on market trends and sustainability goals. The company also presented new product innovations such as the HBM3E Shinebolt, LPDDR5X CAMM2 and Detachable AutoSSD.

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce the launch of a new Trident Z5 RGB DDR5 memory kit specification at DDR5-8400 CL40-52-52-134 48 GB (2x24GB), aimed at the latest 14th Gen Intel Core desktop processor & Intel Z790 chipset platform.

Extreme Memory Speed at DDR5-8400 CL40
Developed on the latest 14th Gen Intel Core desktop processor and Intel Z790 chipset platform, G.SKILL is announcing a new DDR5 memory specification at DDR5-8400 CL40-52-52-134 with 48 GB (2x24GB) kit capacity. As shown in the screenshot below, this extreme speed memory kit is validated on the Intel Core i9-14900K desktop processor and ASUS ROG Maximus Z790 Apex Encore motherboard, and demonstrates incredible memory bandwidth speeds at 128.88 GB/s read, 127.03 GB/s write, and 123.83 GB/s copy in the AIDA64 memory bandwidth benchmark.

ADATA, the world's leading brand for memory modules and flash memory and Intel recommended partner, in conjunction with its e-sports brand XPG (Xtreme Performance Gear), announces that XPG's complete range of DDR5 memory modules and ADATA Gen 5 SSDs fully support the latest Intel Core processor (14th gen) platform. The recent launch of this latest 14th Gen desktop processor platform emphasized its placing as the fastest processor in the world. Not only does this processor multi-task gaming and heavy workloads, but it also delivers amazing across-the-board performance, in line with the brand appeal fostered by ADATA and XPG. Together, we are committed to providing e-sports enthusiasts and creators with the fastest and most reliable experience available.

XPG DDR5 memory and ADATA PCIe 5.0 SSDs fully support Intel's latest desktop platform
ADATA has partnered with Intel and the world's foremost motherboard brands to conduct compatibility testing on XPG DDR5 memory modules and ADATA PCIe 5.0 SSDs in preparation for Intel Core processors (14th gen). Although the most common clock speed in the DDR5 market is currently 5600MT/s, XPG LANCER DDR5 memory modules successfully achieved an ultra-high clock speed of 8,000MT/s during testing and also support Intel XMP Ready to successfully overclock from 8,400MT/s to 9,900MT/s. The ADATA LEGEND 970 PCIe 5.0 SSD was tested at up to an ultra-high 10,000 MB/s sequential read and write speed with 4K random write speed reaching up to 1,400K, delivering a smooth and ultra-efficient desktop experience to gamers and creators alike.

According to the editorial blog post published on the Samsung blog by SangJoon Hwang, Executive Vice President and Head of the DRAM Product & Technology Team at Samsung Electronics, we have information that High-Bandwidth Memory 4 (HBM4) is coming in 2025. In the recent timeline of HBM development, we saw the first appearance of HBM memory in 2015 with the AMD Radeon R9 Fury X. The second-generation HBM2 appeared with NVIDIA Tesla P100 in 2016, and the third-generation HBM3 saw the light of the day with NVIDIA Hopper GH100 GPU in 2022. Currently, Samsung has developed 9.8 Gbps HBM3E memory, which will start sampling to customers soon.

However, Samsung is more ambitious with development timelines this time, and the company expects to announce HBM4 in 2025, possibly with commercial products in the same calendar year. Interestingly, the HBM4 memory will have some technology optimized for high thermal properties, such as non-conductive film (NCF) assembly and hybrid copper bonding (HCB). The NCF is a polymer layer that enhances the stability of micro bumps and TSVs in the chip, so memory solder bump dies are protected from shock. Hybrid copper bonding is an advanced semiconductor packaging method that creates direct copper-to-copper connections between semiconductor components, enabling high-density, 3D-like packaging. It offers high I/O density, enhanced bandwidth, and improved power efficiency. It uses a copper layer as a conductor and oxide insulator instead of regular micro bumps to increase the connection density needed for HBM-like structures.

Micron Technology, Inc., today announced it has extended its industry-leading 1β (1-beta) process node technology with the introduction of 16Gb DDR5 memory. With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron's 1β DDR5 DRAM is now shipping to all data center and PC customers. Micron's 1β-based DDR5 memory with advanced high-k CMOS device technology, 4-phase clocking and clock-sync provides up to a 50% performance uplift and 33% improvement in performance per watt over the previous generation.

As CPU core counts increase to meet the demands of data center workloads, the need for higher memory bandwidth and capacities grows significantly to overcome the 'memory wall' challenge while optimizing the total cost of ownership for customers. Micron's 1β DDR5 DRAM allows computational capabilities to scale with higher performance enabling applications like artificial intelligence (AI) training and inference, generative AI, data analytics, and in-memory databases (IMDB) across data center and client platforms. The new 1β DDR5 DRAM product line offers current module densities in speeds ranging from 4,800 MT/s up to 7,200 MT/s for use in data center and client applications.

Hardware cybersecurity pioneer and industrial NAND storage specialist, Flexxon, today announced the launch of its latest security product, Xsign. Now available globally, the Xsign provides enhanced security through an innovative approach to unlocking sensitive data reserved only for authorized personnel.

With the use of the Xsign hardware security key, organisations will be provided with a tailored software platform that syncs only with the Xsign key, thereby granting access to pre-defined users. Beyond its function as a security key, the Xsign also operates as a traditional storage card, equipped with Flexxon's industry leading reliability and performance. Key beneficiaries of the solution include industries that handle personal and sensitive data like the healthcare, finance, and government and defense sectors.

Micron Technology, Inc., one of the world's largest semiconductor companies and the only U.S.-based manufacturer of memory, will today celebrate the start of construction on the nation's first new memory manufacturing fab in 20 years. Company executives will join Idaho Governor Brad Little, Boise Mayor Lauren McLean, other community partners and team members to mark the milestone with a ceremonial concrete pour at Micron's Boise headquarters on the 45th anniversary of the company's founding.

Just over a year ago, Micron announced its plans to invest approximately $15 billion through the end of the decade to construct a new fab for leading-edge memory manufacturing, to be co-located with the company's R&D epicenter in its hometown of Boise. Through the lifespan of the project, Micron will directly infuse $15.3 billion into the Idaho economy and directly spend $13.0 billion with Idaho businesses. The project will create over 17,000 new Idaho jobs, including 2,000 Micron direct jobs, furthering the need for a diverse, highly skilled workforce.

v-color Technology Inc, is thrilled to introduce a memory kit that redefines extreme performance. This release unveils an unparalleled DDR5 memory specification designed to push the boundaries of low-latency performance, with module capacity of 16GBx2 and 32GBx2 CL of 26 and speeds ranging from 5600 MHz up to 5800 MHz. These new kits will open a new era of gaming and overclocking, delivering speed and stability to the most demanding users

v-color announced its latest achievement in the form of an Ultra-Low-Timing XSky series DDR5 memory kit. This module operates at 32 GB (2x16GB) DDR5 5600 MHz CL26-36-36-76 1.4 V, 32 GB (2x 16 GB) DDR5 5800 MHz CL26-36-36-76 1.4 V and 64 GB (2x32GB) DDR5 5600 MHz CL26-36-36-76 1.4 V.

During the China Chip Storage Future 2023 Storage Industry Trend Summit, Yingren Technology, widely recognized as InnoGrit outside of China, announced the initiation of mass production of its enterprise-level YR S900 PCIe 5.0 SSD controller. Marking a significant breakthrough, the YR S900 stands as China's first domestic PCIe 5.0 SSD controller. Operating on an open-source RISC-V architecture, the YR S900 is engineered to align with U.S. export restrictions, ensuring a seamless design and manufacturing process of the SSD controller. While Yingren Technology remains discreet about the specific process node to produce the YR S900, it's known that the controller embodies a versatile design, with compatibility extending to mainstream NAND from eminent manufacturers, and exhibits an impressive synergy with NAND from Yangtze Memory Technologies Corp (YMTC).

The YR S900 is a quad-channel controller, offering sequential read and write speeds peaking at 14 GB/s and 12 GB/s, respectively, and is equipped with InnoGrit's third-generation ECC engine to optimize 4K LDPC encoding and decoding. This collaboration with Kioxia's XL-Flash results in a low 4K random read latency of 10us, highlighting its potential to deliver higher data throughput, increased stability, and extended service life. The YR S900 encompasses a comprehensive feature set, including FDP, SR-IOV hardware virtualization, CMB, and a range of data encryption algorithms. While the mass production of the YR S900 underscores a monumental stride in SSD solutions within China, it remains to be seen whether adopting this new Chinese technology will enter markets beyond China.

TSMC today announced the new 3Dblox 2.0 open standard and major achievements of its Open Innovation Platform (OIP) 3DFabric Alliance at the TSMC 2023 OIP Ecosystem Forum. The 3Dblox 2.0 features early 3D IC design capability that aims to significantly boost design efficiency, while the 3DFabric Alliance continues to drive memory, substrate, testing, manufacturing, and packaging integration. TSMC continues to push the envelope of 3D IC innovation, making its comprehensive 3D silicon stacking and advanced packaging technologies more accessible to every customer.

"As the industry shifted toward embracing 3D IC and system-level innovation, the need for industry-wide collaboration has become even more essential than it was when we launched OIP 15 years ago," said Dr. L.C. Lu, TSMC fellow and vice president of Design and Technology Platform. "As our sustained collaboration with OIP ecosystem partners continues to flourish, we're enabling customers to harness TSMC's leading process and 3DFabric technologies to reach an entirely new level of performance and power efficiency for the next-generation artificial intelligence (AI), high-performance computing (HPC), and mobile applications."

CORSAIR, a world leader in enthusiast components for gamers, creators, and PC builders, today launched the much anticipated latest addition to its award-winning memory line-up, DOMINATOR TITANIUM DDR5 memory. Built using some of the fastest DDR5 ICs alongside patented CORSAIR DHX cooling technology for improved overclocking potential, DOMINATOR TITANIUM continues the DOMINATOR legacy with a stunning design and blazing performance.

Sporting an elegant, fresh new aesthetic and built using premium materials and components, DOMINATOR TITANIUM DDR5 memory will be available for both Intel and AMD platforms, supporting Intel XMP 3.0 when paired with 12th and 13th-Gen Core processors or AMD EXPO for Ryzen 7000 CPUs. These technologies enable easy overclocking in just a couple of clicks on compatible platforms.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry's first Low Power Compression Attached Memory Module (LPCAMM) form factor, which is expected to transform the DRAM market for PCs and laptops - and potentially even data centers. Samsung's groundbreaking development for its 7.5 gigabits-per-second (Gbps) LPCAMM has completed system verification through Intel's platform. Historically, PCs and laptops have conventionally used LPDDR DRAM or DDR-based So-DIMMs. While LPDDR is compact, it's permanently attached to the motherboard, making it challenging to replace during repairs or upgrades. On the other hand, So-DIMMs can be attached or detached easily but have limitations with performance and other physical features.

LPCAMM overcomes the shortcomings of both LPDDR and So-DIMMs, addressing the increased demand for more efficient yet compact devices. Being a detachable module, LPCAMM offers enhanced flexibility for PC and laptop manufacturers during the production process. Compared to So-DIMM, LPCAMM occupies up to 60% less space on the motherboard. This allows more efficient use of devices' internal space while also improving performance by up to 50% and power efficiency by up to 70%. LPDDR's power-saving features have made it an attractive option for servers, since it could potentially improve total cost of operation (TCO) efficiency. However, using LPDDR can create operational difficulties such as the need to replace the entire motherboard when upgrading a server's DRAM specifications. LPCAMM offers a solution to these challenges, creating significant potential for it to become the solution of choice for future data centers and servers.

SK hynix announced on September 22 that it showcased its latest memory technologies and products at Intel Innovation 2023 held September 19-20 in the western U.S. city of San Jose, California. Hosted by Intel since 2019, Intel Innovation is an annual IT exhibition which brings together the technology company's customers and partners to share the latest developments in the industry. At this year's event held at the San Jose McEnery Convention Center, SK hynix showcased its advanced semiconductor memory products which are essential in the generative AI era under the slogan "Pioneer Tomorrow With the Best."

Products that garnered the most interest were HBM3, which supports the high-speed performance of AI accelerators, and DDR5 RDIMM, a DRAM module for servers with 1bnm process technology. As one of SK hynix's core technologies, HBM3 has established the company as a trailblazer in AI memory. SK hynix plans to further strengthen its position in the market by mass-producing HBM3E (Extended) from 2024. Meanwhile, DDR5 RDIMM with 1bnm, or the 5th generation of the 10 nm process technology, also offers outstanding performance. In addition to supporting unprecedented transfer speeds of more than 6,400 megabits per second (Mbps), this low-power product helps customers simultaneously reduce costs and improve ESG performance.

KIOXIA America, Inc. today announced that it has donated a command set specification to the Linux Foundation vendor-neutral Software-Enabled FlashTM Project. Built to deliver on the promise of software-defined flash, Software-Enabled Flash technology gives storage developers control over their data placement, latency outcomes, and workload isolation requirements. Through its open API and SDKs, hyperscale environments may optimize their own flash protocols, such as flexible direct placement (FDP) or zoned namespace (ZNS), while accelerating adoption of new flash technologies. This unique combination of open source software and purpose-built hardware can help data centers maximize the value of flash memory. KIOXIA has developed working samples of hardware modules for hyperscalers, storage developers and application developers.

"We are delighted to provide command set specifications to the Software-Enabled Flash Project," said Eric Ries, senior vice president and general manager of the Memory and Storage Strategy Division for KIOXIA America, Inc. "This is an important step that allows the ecosystem to bring products to market, and enables customers to extract the maximum value from flash memory."

Supermicro, Inc., a Total IT Solution Provider for Cloud, AI/ML, Storage, and 5G/Edge, is announcing the AMD based Supermicro H13 generation of WIO Servers, optimized to deliver strong performance and energy efficiency for edge and telco datacenters powered by the new AMD EPYC 8004 Series processors. The new Supermicro H13 WIO and short-depth front I/O systems deliver energy-efficient single socket servers that lower operating costs for enterprise, telco, and edge applications. These systems are designed with a dense form factor and flexible I/O options for storage and networking, making the new servers ideal for deploying in edge networks.

"We are excited to expand our AMD EPYC-based server offerings optimized to deliver excellent TCO and energy efficiency for data center networking and edge computing," said Charles Liang, president and CEO of Supermicro. "Adding to our already industry leading edge-to-cloud rack scale IT solutions, the new Supermicro H13 WIO systems with PCIe 5.0 and DDR5-4800 MHz memory show tremendous performance for edge applications."

UPMEM, a fabless semiconductor startup has raised €4.1 M equity from the European Innovation Council (EIC) Fund and Venture Capitalists (Partech, Western Digital Capital, C4 Ventures…), and a €2.5M grant from the EIC. Founded by Fabrice Devaux and Gilles Hamou, the company is pioneering ultra-efficient Processing In Memory (PIM) accelerators to tackle the significant challenge of compute efficiency for AI and big data applications.

UPMEM's PIM solution, integrating UPMEM's first commercial-grade PIM chip on the market, is now available to cloud markets across the globe (US, Asia...) to provide the most cost-effective and energy-efficient solutions for AI and analytics applications in data centers and at the edge, such as large language models (LLM e.g. GPT), genomics, large analytics.

Patriot Memory has announced a full expansion of its latest DDR5 performance memory series, the Viper Xtreme 5 DDR5. This expansion will include new non-RGB models available in 7,600 MT/s and 8,200 MT/s kits, with kit capacities from 32 GB (16 GB x2) to 48 GB (24 GB x2). Previously unveiled at CES 2023, the Viper Xtreme 5 aims to take system performance to a new level with performance memory built for extreme overclockers, serious gamers and enthusiast tinkerers alike. With speeds reaching up to 8,200 MT/s, the Viper Xtreme 5 is Patriot Memory and Viper Gaming's fastest DRAM produced to date.

Since its debut, the Viper Xtreme 5 has received strong praise from gamers, tech enthusiasts and media alike, including a nomination for "Best System Memory Series" at the 2023 European Hardware Awards, FunkyKit Editor's Choice Award, Techpowerup Editor's Choice Award, TweakTown Editor's Choice Award and Overclockers.com's "Approved" Top Rating. The Viper Xtreme 5 was also featured in multiple record-breaking overclock competitions by overclockers Chewonthis and Fugger.

Lexar, a leading global brand of flash memory solutions, joined Gamescom 2023 for the first time. Lexar also unveiled some of the new products that are estimated to be launched in Q4 2023 for the first time at the show. Designed for PC enthusiasts to accelerate their workflow, the new portfolio includes internal SSDs, DRAM.

The performance of Lexar ARES RGB DDR5 Desktop Memory reaches a new height of 8000MT/s and 8400MT/s, allowing hardcore gamers and PC enthusiasts to experience superior performance with next-gen DDR5. And, in addition to the performance, this memory also features Lexar RGB Sync so gamers can customize the RGB LED to their own style, and its sleek premium aluminium heat spreader keeps the system cool. It is built with on-die ECC, which leverages real-time data error correction for increased data stability and reliability. With on-board Power Management IC (PMIC), it provides better power control and power delivery.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce new DDR5 memory kit specifications at DDR5-6400 CL32-39-39 in kit capacities of 32 GB (16 GB x2) and 48 GB (24 GB x2) under the Trident Z5 Neo RGB series, which also now comes in a new white version. Designed for AMD Ryzen 7000 series processors and AMD X670 chipset motherboards with AGESA 1.0.0.7c BIOS updates, and programmed with AMD EXPO overclock profile technology, these new specifications enable PC enthusiasts, overclockers, and DIY builders to build an ideal AMD system.

Overclocked Memory Speed Up to DDR5-6400
With the introduction of the AGESA 1.0.0.7c update, G.SKILL is updating the Trident Z5 Neo RGB series with DDR5-6400 memory kits, designed for use on compatible AMD platforms. Refer to the screenshot below to see the DDR5-6400 CL32-39-39 32 GB (16 GB x2) memory kit validated on the AMD Ryzen 9 7950X desktop processor and the ASUS ROG CROSSHAIR X670E HERO motherboard with the 1602 BIOS update. Memory performance and results may vary depending on the motherboard model, CPU model, and BIOS version used.

SK hynix Inc. announced today that it successfully developed HBM3E, the next-generation of the highest-specification DRAM for AI applications currently available, and said a customer's evaluation of samples is underway. The company said that the successful development of HBM3E, the extended version of HBM3 which delivers the world's best specifications, comes on top of its experience as the industry's sole mass provider of HBM3. With its experience as the supplier of the industry's largest volume of HBM products and the mass-production readiness level, SK hynix plans to mass produce HBM3E from the first half of next year and solidify its unrivaled leadership in AI memory market.

According to the company, the latest product not only meets the industry's highest standards of speed, the key specification for AI memory products, but all categories including capacity, heat dissipation and user-friendliness. In terms of speed, the HBM3E can process data up to 1.15 terabytes a second, which is equivalent to processing more than 230 Full-HD movies of 5 GB-size each in a second.