The mid-range AMD Radeon RX 5600 XT is not supposed to have 16 GB of video memory, but the same hardware modders from Brazil behind the recent GeForce RTX 2080 16 GB mod, had other ideas for the card. They have not only increased the memory size to 16 GB through memory chip replacement, but also succeeded in widening its memory bus to 256-bit. The RX 5600 XT was launched in 2018 with 6 GB of 14 Gbps GDDR6 memory over a 192-bit memory interface. The card is cut down from the 7 nm "Navi 10" silicon powering the RX 5700 series, by enabling 36 out of 40 compute units (the same count as the RX 5700), but with a truncated 192-bit memory bus wired to 6 GB of memory (and so 25% lower memory bandwidth).

Paulo Gomes and Ronaldo Buassali pulled off the daring Radeon RX 5600 XT memory mod, which involves not just increasing the memory size from 6 GB to 16 GB, but also widening the memory bus from 192-bit to 256-bit. Since the RX 5600 XT is based on the same "Navi 10" GPU as the RX 5700, custom-design graphics cards tend to reuse PCB designs from the RX 5700 series, and have two vacant memory pads that are sometimes exposed and even balled. The mod involves three key stages—to replace the six 8 Gbit GDDR6 memory chips with eight 16 Gbit ones; to add the required electrical SMDs and VRM components for the two additional memory chips; and lastly, to give the card a modified BIOS that can let it play with the new memory configuration. The "Navi 10" silicon also powers certain Radeon Pro graphics cards with 16 GB of memory using 16 Gbit memory chips, so that could be the starting point for the BIOS mod.

An unusual memory configuration has been spotted on an HONOR MagicBook Pro 16 AI laptop—Golden Pig Upgrade (via Weibo) has shared a brief snippet of footage from a Task Manager session. It confirms that non-binary symmetrical LPDDR5(X) memory is now operating within portable Windows 11 devices, at least in China. Crucial 12 GB capacity DDR5 SODIMM products were uncovered a couple of days ago—at the time, tech enthusiasts wondered whether other options were due in the near future. Recent Geekbench Browser entries have unveiled several "HONOR DRA-XX" Intel Core Ultra-powered devices that sport 24 GB memory configurations.

Manufacturers have been deliberating over new 12 GB, 24 GB, and 48 GB standards for roughly two years—we witnessed the release of commercial desktop products last year. It has taken longer for OEM options to arrive, but HONOR seems to be pioneering a rollout within the slimline laptop segment. VideoCardz has analyzed Golden Pig Upgrade's short clip—they believe that the demoed MagicBook Pro 16 (dual-channel) has a soldered-on: "total capacity of 24 GB based on LPDDR5X technology. Instead of relying on SODIMM modules, this laptop has eight individual memory chips, each with a capacity of 3 GB, totaling 24 GB of LPDDR5X-6400 memory." Upcoming enthusiast-class portable systems—with quadruple SODIMM slot setups—could be fitted with maximum 48 GB capacities. The latest developments signal a pleasing breakaway from traditional laptop system memory limits of 16 and 32 GB.

ASUS today announced BIOS updates that enable support for up to 256 GB of memory on its Intel 700 and 600 series motherboards that use DDR5 modules. Such models with four DIMM slots can now support up to 256 GB of memory, while such models with two DIMM slots can now support up to 128 GB. These enhancements significantly improve multitasking potential, ensuring smooth and seamless computing. AMD AM5 motherboards from ASUS do not require a BIOS update to enable support for up to 256 GB of DDR5 memory modules.

The BIOS updates can be accessed on the ASUS support pages for the models listed below.

Global memory leader Team Group Inc. today announces that its T-CREATE EXPERT DDR5 desktop memory, under its creator brand, has been honored with the prestigious 2024 German iF Design Award, known as the 'Oscars of the Design World.' Among over 10,000 entries from 72 countries, the product stood out and excelled, once again proving the exceptional research and development capabilities of the Team Groupp team, along with its outstanding design aesthetics. By combining ultimate performance with stunning aesthetics, the product meets the diverse needs of creators, receiving recognition from international professional judges in all aspects.

The German iF DESIGN AWARD, one of the four major design awards in the world, is internationally recognized for its unparalleled and innovative significance. Global professional judges select the best designs based on five criteria: Concept, Appearance, Functionality, Differentiation, and Impact. T-CREATE EXPERT DDR5 memory emerged victoriously from this rigorous selection process, outperforming over 10,000 entries and earning this prestigious honor, showcasing Team Group's dedication to crafting products for creators.

A Crucial "CT12G56C46S5" Non-ECC Small Outline Dual In-line Memory Module (SODIMM) is available to pre-order from Amazon UK—the 12 GB capacity product was spotted by everyone's favorite PC hardware sleuth;—momomo_us. March 31 appears to be the official shipping out date—current pricing is £44.99 ($57.50). Additionally, customers have the option to reserve a related 24 GB Kit (2x 12 GB) kit (CT2K12G56C46S5), priced at £87.99 (~$112.36). According to product descriptions, Crucial's upcoming laptop 5600 MHz RAM "can downclock if system specification only supports 5200 MHz or 4800 MHz."

"Non-binary modules" DDR5 modules hit retail last year—we have witnessed a slow trickle out of 24 GB and 48 GB capacity sticks, granting unusual memory configurations on compatible AMD and Intel platforms. The CT12G56C46S5 and CT2K12G56C46S5 are supported by "Core 13th Gen and Ryzen 6000 Series laptop CPUs and above." Crucial's latest DDR5 SODIMM could be the first 12 GB capacity model to reach retail, unless a rival manufacturer sneaks out an equivalent item prior to March 31.

February saw community mods bring resizable BAR support to several older platforms; and now we come across a mod that brings it to some older GPUs. The NVStrapsReBAR mod by terminatorul, which is forked out of the ReBarUEFI mod by xCurio, brings resizable BAR support to NVIDIA GeForce RTX 20-series and GTX 16-series GPUs based on the "Turing" graphics architecture. This mod is intended for power users, and can potentially brick your motherboard. NVIDIA officially implemented resizable BAR support since its RTX 30-series "Ampere" GPUs in response to AMD's Radeon RX 6000 RDNA 2 GPUs implementing the tech under the marketing name Smart Access Memory. While AMD would go on to retroactively enable the tech for even the older RX 5000 series RDNA GPUs, NVIDIA didn't do so for "Turing."

NVStrapsReBAR is a motherboard UEFI firmware mod. It modifies the way your system firmware negotiates BAR size with the GPU on boot. There are only two ways to go about modding a platform to enable resizable BAR on an unsupported platform—by modding the motherboard firmware, or the video BIOS. Signature checks by security processors in NVIDIA GPUs make the video BIOS modding route impossible for most users; thankfully motherboard firmware modding isn't as difficult. There is an extensive documentation by the author to go about using this mod. The author has tested the mod to work with "Turing" GPUs, however, it doesn't work with older NVIDIA GPUs, including "Pascal." Resizable BAR enables the CPU (software) to see video memory as a single contiguously addressable block, rather than through 256 MB apertures.

T-FORCE, the gaming brand under the leading global memory brand Team Group Inc., has launched the highly expected T-FORCE XTREEM ARGB DDR5 Desktop Memory, which not only upgrades both in appearance and performance but also utilizes the exclusive patented IC grading verification technology to create high-speed performance memory modules. The XTREEM ARGB DDR5 allows gamers to enjoy the thrill of gaming while creating an aurora immersive atmosphere with fluid and gentle lighting effects, satisfying consumers' pursuit of robust performance and ultimate aesthetics.

In terms of design, the T-FORCE XTREEM ARGB DDR5 features innovative dual-piece light pipes that emit soft and delicate light movements resembling aurora charm. It also supports various lighting control software [2], creating an extraordinary RGB visual feast and leading players on an unforgettable aurora journey. The product itself features a 2 mm-thick forged aluminium alloy matte black heat spreader, exhibiting both the hardness and durability of basalt and the delicate texture of a black sand beach, perfectly showcasing the ultimate aesthetics of metal craftsmanship and achieving exquisite and unique computer equipment. The XTREEM ARGB DDR5 uses a 10-layer professional anti-interference optimized PCB board and improves the heat dissipation design of the PMIC power management chip to keep performance stable during high-speed data transmission, allowing gamers to enjoy a powerful and high-frame-rate gaming experience.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, is pleased to announce the publication of JESD239 Graphics Double Data Rate (GDDR7) SGRAM. This groundbreaking new memory standard is available for free download from the JEDEC website. JESD239 GDDR7 offers double the bandwidth over GDDR6, reaching up to 192 GB/s per device, and is poised to meet the escalating demand for more memory bandwidth in graphics, gaming, compute, networking and AI applications.

JESD239 GDDR7 is the first JEDEC standard DRAM to use the Pulse Amplitude Modulation (PAM) interface for high frequency operations. Its PAM3 interface improves the signal to noise ratio (SNR) for high frequency operation while enhancing energy efficiency. By using 3 levels (+1, 0, -1) to transmit 3 bits over 2-cycles versus the traditional NRZ (non-return-to-zero) interface transmitting 2 bits over 2-cycles, PAM3 offers higher data transmission rate per cycle resulting in improved performance.

V-COLOR today introduced a series of overclocking memory RDIMM kits for workstations powered by AMD Ryzen Threadripper 7000WX processors on the WRX90 platform that features 8-channel DDR5 memory. The kits include 8 RDIMMs, with densities ranging between 16 GB per RDIMM (128 GB per kit), to 96 GB per RDIMM (768 GB per kit); and comes in speeds ranging between DDR5-5600 and DDR5-7200. The best part? These modules feature AMD EXPO profiles, which should make enabling their advertised speeds as easy as a couple of clicks in the motherboard's UEFI setup program.

An EXPO profile not just applies the kit's memory speed, timings, and voltages, but also several sub-timings and settings that are specific to the AMD platform, which are not found on Intel. V-COLOR has tested its overclocking RDIMMs on popular AMD WRX90 chipset motherboards, namely the ASRock WRX90 WS EVO, ASUS PRO WS WRX90E-SAGE SE, and certain unreleased WRX90 workstation motherboards by Supermicro. Although the RDIMMs lack heatspreaders for the DRAM chips, V-COLOR is including what it calls "micro heatsinks" for the PMIC and RCDs. The RCD in particular is crucial to get Threadrippers to operate at speeds such as DDR5-7200. The kits should be available starting today, with all models available from mid-March. The company didn't reveal pricing.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has started sampling its 256-gigabyte (GB) SD Express microSD card with sequential read speed of up to 800 megabytes per second (MB/s) and has commenced mass production of its 1-terabyte (TB) UHS-1 microSD card. With the introduction of its next-generation microSD card line-up, Samsung aims to provide differentiated memory solutions required for tomorrow's mobile computing and on-device AI applications.

"With our two new microSD cards, Samsung has provided effective solutions to address the growing demands of mobile computing and on-device AI," said Hangu Sohn, Vice President of the Memory Brand Product Biz Team at Samsung Electronics. "Despite their tiny size, these memory cards deliver powerful SSD-like performance and capacity to help users get more out of demanding modern and future applications."

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed HBM3E 12H, the industry's first 12-stack HBM3E DRAM and the highest-capacity HBM product to date. Samsung's HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). In comparison to the 8-stack HBM3 8H, both aspects have improved by more than 50%.

"The industry's AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need," said Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "This new memory solution forms part of our drive toward developing core technologies for high-stack HBM and providing technological leadership for the high-capacity HBM market in the AI era."

Brett Simpson, Partner and Co-Founder of Arete Research, sat down with AMD CTO Mark Papermaster during the former's "Investor Webinar Conference." A transcript of the Arete + AMD question and answer session appeared online last week—the documented fireside chat concentrated mostly on "AI compute market" topics. Papermaster was asked about his company's competitive approach when taking on NVIDIA's very popular range of A100 and H100 AI GPUs, as well as the recently launched GH200 chip. The CTO did not reveal any specific pricing strategies—a "big picture" was painted instead: "I think what's important when you just step back is to look at total cost of ownership, not just one GPU, one accelerator, but total cost of ownership. But now when you also look at the macro, if there's not competition in the market, you're going to see not only a growth of the price of these devices due to the added content that they have, but you're -- without a check and balance, you're going to see very, very high margins, more than that could be sustained without a competitive environment."

Papermaster continued: "And what I think is very key with -- as AMD has brought competition market for these most powerful AI training and inference devices is you will see that check and balance. And we have a very innovative approach. We've been a leader in chiplet design. And so we have the right technology for the right purpose of the AI build-out that we do. We have, of course, a GPU accelerator. But there's many other circuitry associated with being able to scale and build out these large clusters, and we're very, very efficient in our design." Team Red started to ship its flagship accelerator, Instinct MI300X, to important customers at the start of 2024—Arete Research's Simpson asked about the possibility of follow-up models. In response, AMD's CTO referenced some recent history: "Well, I think the first thing that I'll highlight is what we did to arrive at this point, where we are a competitive force. We've been investing for years in building up our GPU road map to compete in both HPC and AI. We had a very, very strong harbor train that we've been on, but we had to build our muscle in the software enablement."

Micron Technology, Inc. (Nasdaq: MU), a global leader in memory and storage solutions, today announced it has begun volume production of its HBM3E (High Bandwidth Memory 3E) solution. Micron's 24 GB 8H HBM3E will be part of NVIDIA H200 Tensor Core GPUs, which will begin shipping in the second calendar quarter of 2024. This milestone positions Micron at the forefront of the industry, empowering artificial intelligence (AI) solutions with HBM3E's industry-leading performance and energy efficiency. As the demand for AI continues to surge, the need for memory solutions to keep pace with expanded workloads is critical.

Micron's HBM3E solution addresses this challenge head-on with:

• Superior Performance: With pin speed greater than 9.2 gigabits per second (Gb/s), Micron's HBM3E delivers more than 1.2 terabytes per second (TB/s) of memory bandwidth, enabling lightning-fast data access for AI accelerators, supercomputers, and data centers.
• Exceptional Efficiency: Micron's HBM3E leads the industry with ~30% lower power consumption compared to competitive offerings. To support increasing demand and usage of AI, HBM3E offers maximum throughput with the lowest levels of power consumption to improve important data center operational expense metrics.
• Seamless Scalability: With 24 GB of capacity today, Micron's HBM3E allows data centers to seamlessly scale their AI applications. Whether for training massive neural networks or accelerating inferencing tasks, Micron's solution provides the necessary memory bandwidth.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, in collaboration with ASUS ROG and Intel, celebrates a monumental achievement of setting a new SuperPi-32M overclocking world record at an astonishing 2 min 59 sec 919 ms, marking the first time this benchmark category was achieved in under 3 minutes. This amazing world record was achieved by SAFEDISK, the legendary South Korean extreme overclocker, using G.SKILL Trident Z5 RGB DDR5 memory, ASUS ROG Maximus Z790 Apex Encore motherboard, and Intel Core i9-14900KF desktop processor under liquid nitrogen cooling, demonstrating the bleeding edge of hardware performance of the latest computing hardware. For more information, visit the validation page on hwbot.org.

Overclocking Milestone Unlocked - SuperPi-32M at 2 min 59 sec 919 ms
SuperPi-32M is one of the most popular benchmarks for CPU and memory overclockers, and this extreme overclocking milestone commemorates the first time a score of under 3 minutes was achieved. Using liquid nitrogen extreme cooling, SAFEDISK lowered the CPU temperature as low as -188°C to reach a remarkable 8449.2 MHz and the G.SKILL Trident Z5 RGB DDR5 memory as low as -60°C to reach DDR5-9052 with 32-48-45-36 timings on an ASUS ROG Maximus Z790 Apex Encore motherboard. This expertly configured setup and operation under extreme conditions gives testament to the breathtaking technical performance of modern computer systems.

By the end of 2023, MSI unveiled its groundbreaking support for memory capacities of up to 256 GB. Now, both MSI Intel and AMD motherboards official support these capacities, with 4 DIMMs enabling 256 GB and 2 DIMMs supporting 128 GB. This advancement enhances multitasking capabilities and ensures seamless computing operations.

Intel Motherboard - 700 & 600 Series Platform, BIOS Rolling Out
The supported platforms for this memory capacity enhancement include Intel 700 and 600 series DDR5 motherboards. Gamers looking to benefit from these enhancements will need to upgrade to the own dedicated BIOS. MSI is currently diligently working on releasing the BIOS, with the first batch already available below. The rest of the models will be released in late February and March.

Scientists and engineers have been experimenting with hafnium oxide over the past decade—many believe that this "elusive ferroelectric material" is best leveraged in next generation computing memory (due to its non-volatile properties), although this requires a major scientific breakthrough to get working in a practical manner. Hafnia's natural state is inherently non-ferroelectric, so it takes some effort to get it into a suitable state—a SciTechDaily article explores past efforts: "Scientists could only get hafnia to its metastable ferroelectric state when straining it as a thin, two-dimensional film of nanometer thickness." Research teams at the University of Rochester, New York and University of Tennessee, Knoxville have presented evidence of an exciting landmark development. Sobhit Singh, assistant professor at UoR's Department of Mechanical Engineering, believes that the joint effort has created a lane for the creation of bulk ferroelectric and antiferroelectric hafnia.

His "Proceedings of the National Academy of Sciences" study proposes an alternative material path: "Hafnia is a very exciting material because of its practical applications in computer technology, especially for data storage. Currently, to store data we use magnetic forms of memory that are slow, require a lot of energy to operate, and are not very efficient. Ferroelectric forms of memory are robust, ultra-fast, cheaper to produce, and more energy-efficient." Professor Janice Musfeldt's team at the University of Tennessee have managed to produce a ferroelectric form of hafnia—through an experimental high pressure process, based on Singh's exact calculations. The material remained in a metastable phase post-experiment, even in a pressure-relieved state. Musfeldt commented on the pleasing results: "This is as an excellent example of experimental-theoretical collaboration." Memory manufacturers are likely keeping an eye on Hafnia's breakthrough potential, but material costs are dampening expectations—Tom's Hardware cites shortages (going back to early 2023): "Hafnium (the key component in Hafnia) has seen a nearly fivefold price increase due to increased demand since 2021, raising its cost from about $1,000 per kilogram to about $5,000. Even at $1000 a kilogram, though, hafnium is by far more expensive than silicon, which measures in the tens of dollars per kilogram."

AMD's newly announced Ryzen 8000G "Hawk Point" desktop APUs do not support ECC memory, contrary to what the specifications on the AMD website had initially shown, Reddit users found out. The company has since quietly edited its product pages to remove the bit about ECC support. For the overwhelming majority of desktop client use cases, including enthusiast PCs, ECC memory support is irrelevant. That said, the memory controllers of "Phoenix" in Ryzen PRO 7000 mobile processors for commercial notebooks support ECC memory, and so it stands to reason that upcoming Ryzen PRO models for both commercial desktops and notebooks might feature it.

The AMD Ryzen 7 8700G and Ryzen 5 8600G are based on the 4 nm "Hawk Point" monolithic silicon, with a more overclocker-friendly set of DDR5 memory controllers than the ones found in the Ryzen 7000 "Raphael" processors. Besides support for several high-frequency DDR5 modes, the memory controller technically supports ECC (at least "Phoenix" does, on the Ryzen PRO 7000 mobile processors). The memory controller also supports a maximum of 256 GB of memory, or 64 GB dual-rank memory modules per slot. It also supports 24 GB and 48 GB DIMM densities.

In 2024, the tech industry remains steadfastly focused on AI, with the continued rollout of advanced AI chips leading to significant enhancements in processing speeds. TrendForce posits that this advancement is set to drive growth in both DRAM and NAND Flash across various AI applications, including smartphones, servers, and notebooks. The server sector is expected to see the most significant growth, with content per box for server DRAM projected to rise by 17.3% annually, while enterprise SSDs are forecast to increase by 13.2%. The market penetration rate for AI smartphones and AI PCs is expected to experience noticeable growth in 2025 and is anticipated to further drive the average content per box upward.

Looking first at smartphones, despite chipmakers focusing on improving processing performance, the absence of new AI functionalities has somewhat constrained the impact of AI. Memory prices plummeted in 2023 due to oversupply, making lower-priced options attractive and leading to a 17.5% increase in average DRAM capacity and a 19.2% increase in NAND Flash capacity per smartphone. However, with no new applications expected in 2024, the growth rate in content per box for both DRAM and NAND Flash in smartphones is set to slow down, estimated at 14.1% and 9.3%, respectively.

SK Hynix has unveiled ambitious High Bandwidth Memory (HBM) roadmaps at SEMICON Korea 2024. Vice President Kim Chun-hwan announced plans to mass produce the cutting-edge HBM3E within the first half of 2024, touting 8-layer stack samples already supplied to clients. This iteration makes major strides towards fulfilling surging data bandwidth demands, offering 1.2 TB/s per stack and 7.2 TB/s in a 6-stack configuration. VP Kim Chun-hwan cites the rapid emergence of generative AI, forecasted for 35% CAGR, as a key driver. He warns that "fierce survival competition" lies ahead across the semiconductor industry amidst rising customer expectations. With limits approaching on conventional process node shrinks, attention is shifting to next-generation memory architectures and materials to unleash performance.

SK Hynix has already initiated HBM4 development for sampling in 2025 and mass production the following year. According to Micron, HBM4 will leverage a wider 2048-bit interface compared to previous HBM generations to increase per-stack theoretical peak memory bandwidth to over 1.5 TB/s. To achieve these high bandwidths while maintaining reasonable power consumption, HBM4 is targeting a data transfer rate of around 6 GT/s. The wider interface and 6 GT/s speeds allow HBM4 to push bandwidth boundaries significantly compared to prior HBM versions, fueling the need for high-performance computing and AI workloads. But power efficiency is carefully balanced by avoiding impractically high transfer rates. Additionally, Samsung is aligned on a similar 2025/2026 timeline. Beyond pushing bandwidth boundaries, custom HBM solutions will become increasingly crucial. Samsung executive Jaejune Kim reveals that over half its HBM volume already comprises specialized products. Further tailoring HBM4 to individual client needs through logic integration presents an opportunity to cement leadership. As AI workloads evolve at breakneck speeds, memory innovation must keep pace. With HBM3E prepping for launch and HBM4 in the plan, SK Hynix and Samsung are gearing up for the challenges ahead.

MSI released an intriguing AMI BIOS update on January 31 for their Intel 700 and 600 chipset mainboards—hardware tipster chi11eddog noticed this quiet announcement and proceeded to get his Z790 Carbon MAX WIFI motherboard running on beta version 7D89v1B1. This preliminary release enables "capacity support up to 256 GB" for DDR5 Memory—chi11eddog noted that you previously had to jump through several hoops to get this configuration in working order: "As per a friend in the industry, before this, it needs to disable Above 4G/Resizable BAR/remapping to support 256 GB on Intel systems. MSI has fixed this. No need to disable Above 4G/Resizable Bar."

His MSI Z790 test platform featured an Intel Core i9-14900K CPU and 256 GB (4 x 64 GB) DDR5-4800 of memory—Wccftech's reportage proposes some extra tests: "it would be interesting to see what the maximum speeds are supported when using high-capacity memory kits but for those who prefer capacity over speed, well the solutions are now out there." The Compression Attached Memory Module (CAMM) standard has been adopted by the laptop memory segment, and manufacturers are believed to be transferring technological innovations to desktop form factors. Upcoming 64 GB DDR5 modules offer twice the capacity over the best previous-gen solutions. The proliferation of non-binary DIMM kits—from 24 to 48 GB—in 2023 brought (total) desktop memory capacities to a maximum of 192 GB.

In addition to the 37 Gbps GDDR7 memory, Samsung Electronics prepares to showcase several other memory innovations at the 2024 IEEE-SSCC as compiled by VideoCardz. To begin with, the company is showcasing a new 280-layer 3D QLC NAND flash memory in the 1 Tb density, enabling next generation of mainstream SSDs and smartphone storage. This chip offers an areal density of 28.5 Gb/mm², and a speed of 3.2 GB/s. To put this into perspective, the fastest 3D NAND flash types powering the current crop of flagship NVMe SSDs rely on 2.4 GB/s of I/O data rates.

Next up, is a new generation DDR5 memory chip offers data rates of DDR5-8000 with a density of 32 Gbit (4 GB). This chip uses a symmetric-mosaic DRAM cell architecture, and is built on a 5th generation 10 nm class foundry node Samsung optimized for DRAM products. What's impressive about this chip is that it will allow PC memory vendors to build 32 GB and 48 GB DIMMs in single-rank configuration with DDR5-8000 speeds; as well as 64 GB and 96 GB DIMMs in dual-rank configuration (impressive, provided your platform can play well with DDR5-8000 in dual-rank).

According to sources close to Seoul Economy, and reported by DigiTimes, Intel has reportedly chosen Samsung as a supplier for its next-generation Lunar Lake processors, set to debut later this year. The report notes that Samsung will provide LPDDR5X memory devices for integration into Intel's processors. This collaboration could be a substantial win for Samsung, given Intel's projection to distribute millions of Lunar Lake CPUs in the coming years. However, it's important to note that this information is based on a leak and has not been officially confirmed. Designed for ultra-portable laptops, the Lunar Lake-MX platform is expected to feature 16 GB or 32 GB of LPDDR5X-8533 memory directly on the processor package. This on-package memory approach aims to minimize the platform's physical size while enhancing performance over traditional memory configurations. With Lunar Lake's exclusive support for on-package memory, Samsung's LPDDR5X-8533 products could significantly boost sales.

While Samsung is currently in the spotlight, it remains unclear if it will be the sole LPDDR5X memory provider for Lunar Lake. Intel's strategy involves selling processors with pre-validated memory, leaving the door open for potential validation of similar memory products from competitors like Micron and SK Hynix. Thanks to a new microarchitecture, Intel has promoted its Lunar Lake processors as a revolutionary leap in performance-per-watt efficiency. The processors are expected to utilize a multi-chipset design with Foveros technology, combining CPU and GPU chipsets, a system-on-chip tile, and dual memory packages. The CPU component is anticipated to include up to eight cores, a mix of four high-performance Lion Cove and four energy-efficient Skymont cores, alongside advanced graphics, cache, and AI acceleration capabilities. Apple's use of on-package memory in its M-series chips has set a precedent in the industry, and with Intel's Lunar Lake MX, this trend could extend across the thin-and-light laptop market. However, systems requiring more flexibility in terms of configuration, repair, and upgrades will likely continue to employ standard memory solutions like SODIMMs and/or the new CAMM2 modules that offer a balance of high performance and energy efficiency.

During CES, PCWorld had a chat with Donny Woligroski, Technical Marketing Manager at AMD. The new Ryzen 8000G APUs were a large part of what covered in the almost 17 minute long video and PCWorld got some details that weren't covered in the official press materials that AMD released at the launch. The officially supported memory speed listed by AMD is DDR5-5600, which is a step up from the official speed of DDR5-5200 for the Ryzen 7000-series CPUs.

However, we know that the Ryzen 7000-series is more than happy to use faster memory and as before, AMD has an unofficial memory sweet spot and just as with the Ryzen 7000-series, the Ryzen 8000G-series of APUs has a memory sweet spot of DDR5-6000. That said, it's unknown if the Ryzen 8000G-series will support faster memory or will start flaking out above DDR5-6000, like many Ryzen 7000-series CPUs do unless you switch to a 1:2 ratio. Woligroski is also pointing out that dual-channel is a must to get the best performance out of the new APUs, although this shouldn't really surprise anyone. Full video after the break.

Worldwide semiconductor revenue in 2023 totaled $533 billion, a decrease of 11.1% from 2022, according to preliminary results by Gartner, Inc.

"While the cyclicality in the semiconductor industry was present again in 2023, the market suffered a difficult year with memory revenue recording one of its worst declines in history," said Alan Priestley, VP Analyst at Gartner. "The underperforming market also negatively impacted several semiconductor vendors. Only 9 of the top 25 semiconductor vendors posted revenue growth in 2023, with 10 experiencing double-digit declines."

The combined semiconductor revenue of the top 25 semiconductor vendors declined 14.1% in 2023, accounting for 74.4% of the market, down from 77.2% in 2022.

In a surprising turn of events, SK Hynix has hinted at the possibility of the Compression Attached Memory Module (CAMM) standard, initially designed for laptops, being introduced to desktop PCs. This revelation came from a comment made by an SK Hynix representative at the CES 2024 in Las Vegas for the Korean tech media ITSubIssub. According to the SK Hynix representative, the first implementation is underway, but there are no specific details. CAMM, an innovative memory standard developed by Dell in 2022, was certified to replace SO-DIMM as the official standard for laptop memory. However, the transition to desktop PCs could significantly disrupt the desktop memory market. The CAMM modules, unlike the vertical DRAM sticks currently in use, are horizontal and are screwed into a socket. This design change would necessitate a complete overhaul of the desktop motherboard layout.

The thin, flat design of the CAMM modules could also limit the number that can be installed on an ATX board. However, the desktop version of the standard CAMM2 was announced by JEDEC just a month ago. It is designed for DDR5 memory, but it is expected to become mainstream with the introduction of DDR6 around 2025. While CAMM allows for higher speeds and densities for mobile memory, its advantages for desktops over traditional memory sticks are yet to be fully understood. Although low-power CAMM modules could offer energy savings, this is typically more relevant for mobile devices than desktops. As we move towards DDR6 and DDR7, more information about CAMM for desktops will be needed to understand its potential benefits. JEDEC's official words on the new standard indicate that "DDR5 CAMM2s are intended for performance notebooks and mainstream desktops, while LPDDR5/5X CAMM2s target a broader range of notebooks and certain server market segments." So, we can expect to see CAMM2 in both desktops and some server applications.