Samsung Electronics today reported financial results for the first quarter ended March 31, 2024. The Company posted KRW 71.92 trillion in consolidated revenue on the back of strong sales of flagship Galaxy S24 smartphones and higher prices for memory semiconductors. Operating profit increased to KRW 6.61 trillion as the Memory Business returned to profit by addressing demand for high value-added products. The Mobile eXperience (MX) Business posted higher earnings and the Visual Display and Digital Appliances businesses also recorded increased profitability.

The weakness of the Korean won against major currencies resulted in a positive impact on company-wide operating profit of about KRW 0.3 trillion compared to the previous quarter. The Company's total capital expenditures in the first quarter stood at KRW 11.3 trillion, including KRW 9.7 trillion for the Device Solutions (DS) Division and KRW 1.1 trillion on Samsung Display Corporation (SDC). Spending on memory was focused on facilities and packaging technologies to address demand for High Bandwidth Memory (HBM), DDR5 and other advanced products, while foundry investments were concentrated on establishing infrastructure to meet medium- to long-term demand. Display investments were mainly made in IT OLED products and flexible display technologies.

North American customers are increasing their orders for storage products as energy efficiency becomes a key priority for AI inference servers. This, in turn, is driving up demand for QLC enterprise SSDs. Currently, only Solidigm and Samsung have certified QLC products, with Solidigm actively promoting its QLC products and standing to benefit the most from this surge in demand. TrendForce predicts shipments of QLC enterprise SSD bits to reach 30 exabytes in 2024—increasing fourfold in volume from 2023.

TrendForce identifies two main reasons for the increasing use of QLC SSDs in AI applications: the products' fast read speeds and TCO advantages. AI inference servers primarily perform read operations, which occur less frequently than the data writing required by AI training servers. In comparison to HDDs, QLC enterprise SSDs offer superior read speeds and have capacities that have expanded up to 64 TB.

Korean media reports that Samsung Electronics has signed a 4.134 trillion Won ($3 billion) agreement with AMD to supply 12-high HBM3E stacks. AMD uses HBM stacks in its AI and HPC accelerators based on its CDNA architecture. This deal is significant, as it gives analysts some idea of the kind of volumes of AI GPUs AMD is preparing to push into the market, if they know what percent of an AI GPU's bill of materials is made up by memory stacks. AMD has probably negotiated a good price for Samsung's HBM3E 12H stacks, given that rival NVIDIA almost exclusively uses HBM3E made by SK Hynix.

The AI GPU market is expected to heat up with the ramp of NVIDIA's "Hopper" H200 series, the advent of "Blackwell," AMD's MI350X CDNA3, and Intel's Gaudi 3 generative AI accelerator. Samsung debuted its HBM3E 12H memory in February 2024. Each stack features 12 layers, a 50% increase over the first generation of HBM3E, and offers a density of 36 GB per stack. An AMD CDNA3 chip with 8 such stacks would have 288 GB of memory on package. AMD is expected to launch the MI350X in the second half of 2024. The star attraction with this chip is its refreshed GPU tiles built on the TSMC 4 nm EUV foundry node. This seems like the ideal product for AMD to debut HBM3E 12H on.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market.

"We are excited to deliver the industry's first 9th-gen V-NAND, which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product," said SungHoi Hur, Head of Flash Product & Technology at Samsung Electronics. "Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid state drive (SSD) market that meets the needs for the coming AI generation."

Samsung Electronics and Qualcomm Technologies, Inc. today announced that the companies successfully completed 1024 Quadrature Amplitude Modulation (QAM) tests for both Frequency Division Duplex (FDD) and Time Division Duplex (TDD) spectrum bands, marking an industry-first for FDD. This innovative milestone and collaboration demonstrate the companies' dedication to supporting operators increase 5G throughput and boost spectral efficiency of their networks.

QAM is an advanced modulation technology to transmit data or information more efficiently. This directly relates to how many bits of data can be delivered in each transmission. While 256 QAM is widely used in commercial networks, Samsung and Qualcomm Technologies recently accomplished the latest 1024 QAM defined in 3GPP Release 17 specifications. This enhanced QAM technology helps operators maximize their use of spectrum resources and allows mobile users to seamlessly enjoy various mobile services such as live video streaming and online multi-player gaming, which require higher download speeds.

Samsung Electronics America, the leader in advanced memory technology, today announced a new 512 GB capacity for its BAR Plus and FIT Plus USB 3.2 Gen 1 Flash Drives. The newest drives introduce more storage capacity to the lineup in the same sleek designs, perfect for storing your favorite tunes, irreplaceable photos/videos, and important work or school documents. These USB flash drives help you back up your data and save time thanks to their high capacity, quick speeds, wide device compatibility, and reliability.

"We recognize that professionals across the U.S. have more data storage needs than ever. That's why we're introducing a new size option within our cutting-edge BAR Plus and FIT Plus USB Flash Drive line-up, ensuring there is a storage solution for everyone," said Jose Hernandez, Senior Director of Memory Product Marketing at Samsung. "The drives are also intentionally designed to fit your personal style - whether you prefer something sleek and modern or unassuming and traditional, you can always be plugged in."

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry's first LPDDR5X DRAM supporting the industry's highest performance of up to 10.7 gigabits-per-second (Gbps). Leveraging 12 nanometer (nm)-class process technology, Samsung has achieved the smallest chip size among existing LPDDRs, solidifying its technological leadership in the low-power DRAM market.

"As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles," said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. "Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers." With the surge in AI applications, on-device AI, which enables direct processing on devices, is becoming increasingly crucial, underscoring the need for low-power, high-performance LPDDR memory.

Samsung is preparing to launch its 9th Generation V-NAND (3D NAND flash) memory next month, Korean publication Hankyung reports. The 9th Gen 3D NAND flash memory by Samsung is expected to offer 290 layers, a step-up from the 236-layer 8th Gen V-NAND that the company debuted in 2022. Samsung reportedly achieved the 290-layer vertical stacking density through improvements in its flash layer stacking techniques that relies on increasing the layer counts through more memory holes in the flash layer. The cost here is data density per wafer, but a net gain from the increase in layer counts.

The same source behind the 9th Gen V-NAND story also reports that the company is targeting a rather early 2025 launch for its successor—the 10th Gen V-NAND. This is expected to be a mammoth 430-layer 3D NAND flash, a jump of 140 layers over the 9th Gen (which itself jumped by 54 layers over its predecessor). This would put Samsung back on track along with its competitors, Kioxia, SK Hynix, Micron Technology, and YMTC, as they gun for the ambitious goal of 1000-layer 3D NAND flash by 2030.Many Thanks to TumbleGeorge for the tip.

Following in the wake of an earthquake that struck on April 3rd, TrendForce undertook an in-depth analysis of its effects on the DRAM industry, uncovering a sector that has shown remarkable resilience and faced minimal interruptions. Despite some damage and the necessity for inspections or disposal of wafers among suppliers, the facilities' strong earthquake preparedness of the facilities has kept the overall impact to a minimum.

Leading DRAM producers, including Micron, Nanya, PSMC, and Winbond had all returned to full operational status by April 8th. In particular, Micron's progression to cutting-edge processes—specifically the 1alpha and 1beta nm technologies—is anticipated to significantly alter the landscape of DRAM bit production. In contrast, other Taiwanese DRAM manufacturers are still working with 38 and 25 nm processes, contributing less to total output. TrendForce estimates that the earthquake's effect on DRAM production for the second quarter will be limited to a manageable 1%.

Samsung Electronics America, the leader in advanced memory technology, today introduced the latest iteration of its EVO Select and EVO Plus microSD cards, designed for mobile devices and handheld gaming consoles. The Samsung EVO Select and EVO Plus microSD cards boast increased transfer speeds of up to 160 MB/s, a 23% increase over their predecessors. They offer a turnkey way for everyday users and gamers to add storage space to their devices for content like games, files, photos, and videos.

"With the mobile and handheld gaming market on the rise, we sought to make data transfers on those devices even faster with these updated EVO Select and EVO Plus lines," said Jose Hernandez, Senior Director of Memory Product Marketing at Samsung. "We also heard the need for more space options like a 1 TB memory card for digital files like games, video footage from phones, cameras and drones, photos, and creative designs. With this addition to the lineup, you can be confident you'll have plenty of space, fast speeds and the durability needed to last for years to come."

"The Earth is Blue," said Yuri Gagarin, the first human to journey into space. With two-thirds of its surface covered in water, Earth is a planet that exuberates its blue radiance in the dark space. However, today, the scarcity of water is a challenge that planet Earth is confronted with. For some, this may be hard to understand. What happened to our blue planet Earth? To put in numbers, more than 97% of the water on Earth consists of seawater, with another 2% locked in ice caps. That only leaves a mere 1% of water available for our daily use. The problem lies in the fact that this 1% of water is gradually becoming scarcer due to reasons such as climate change, environmental pollution, and population growth, leading to increased water stress. 'Water stress' is quantified by the proportion of water demand to the available water resources on an annual basis, indicating the severity of water scarcity as the stress index rises. Higher stress indexes signify experiencing severe water scarcity.

The semiconductor ecosystem, unsustainable without water
Because water stress issues transcend national boundaries, various stakeholders including international organizations and governments work to negotiate water resource management strategies and promote collaboration. UN designates March 22nd as an annual "World Water Day" to raise awareness about the severity of water scarcity running various campaigns. Now, it's imperative for companies to also take responsibility for the water resources given and pursue sustainable management.

Samsung debuted its Mach-1 generation of AI processors during a recent shareholder meeting—the South Korean megacorp anticipates an early 2025 launch window. Their application-specific integrated circuit (ASIC) design is expected to "excel in edge computing applications," with a focus on low power and efficiency-oriented operating environments. Naver Corporation was a key NVIDIA high-end AI customer in South Korea (and Japan), but the leading search platform firm and creator of HyperCLOVA X LLM (reportedly) deliberated on an adoption alternative hardware last October. The Korea Economic Daily believes that Naver's relationship with Samsung is set to grow, courtesy of a proposed $752 million investment: "the world's top memory chipmaker, will supply its next-generation Mach-1 artificial intelligence chips to Naver Corp. by the end of this year."

Reports from last December indicated that the two companies were deep into the process of co-designing power-efficient AI accelerators—Naver's main goal is to finalize a product that will offer eight times more energy efficiency than NVIDIA's H100 AI accelerator. Naver's alleged bulk order—of roughly 150,000 to 200,000 Samsung Mach-1 AI chips—appears to be a stopgap. Industry insiders reckon that Samsung's first-gen AI accelerator is much cheaper when compared to NVIDIA H100 GPU price points—a per-unit figure of $3756 is mentioned in the KED Global article. Samsung is speculated to be shopping its fledgling AI tech to Microsoft and Meta.

Samsung's next-generation Galaxy Book 5 Pro premium thin-and-light notebook is expected to incorporate Intel's upcoming Core Ultra "Lunar Lake" processor, and Arc Xe2 graphics, which "Lunar Lake" implements with its iGPU solution. Intel is expected to debut both "Lunar Lake" and "Battlemage" toward the end of 2024. A prototype of this Samsung notebook is already up and running, probably using engineering samples of the two chips. It came to light as keen-eyed enthusiasts noticed new benchmark entries on the SiSoft SANDRA online database. Here, the processor is shown featuring an 8-core (4P+4E) configuration, while the iGPU features a 4 Xe2 core configuration, which works out to 512 unified shaders. The P-cores of the CPU tick at 2.80 GHz, the E-cores at 1.65 GHz, and the iGPU at 1.85 GHz.

Samsung Electronics, a world leader in advanced semiconductor technology, unveiled the expansion of its Compute Express Link (CXL) memory module portfolio and showcased its latest HBM3E technology, reinforcing leadership in high-performance and high-capacity solutions for AI applications.

In a keynote address to a packed crowd at Santa Clara's Computer History Museum, Jin-Hyeok Choi, Corporate Executive Vice President, Device Solutions Research America - Memory at Samsung Electronics, along with SangJoon Hwang, Corporate Executive Vice President, Head of DRAM Product and Technology at Samsung Electronics, took the stage to introduce new memory solutions and discuss how Samsung is leading HBM and CXL innovations in the AI era. Joining Samsung on stage was Paul Turner, Vice President, Product Team, VCF Division at VMware by Broadcom and Gunnar Hellekson, Vice President and General Manager at Red Hat to discuss how their software solutions combined with Samsung's hardware technology is pushing the boundaries of memory innovation.

Samsung Electronics today announced the Galaxy Tab S6 Lite (2024), a stylish tablet designed for both work and play. Paired with the high-precision S Pen and offering reliable performance power, the Galaxy Tab S6 Lite (2024) maximizes inspiration, ideas and output for students, young professionals and families alike.

"At Samsung, we understand that life is fast, work is dynamic and consumers need a device that can keep up with their busy everyday lifestyles," said Junho Park, VP and Head of the Galaxy Ecosystem Product Planning Team, MX Business at Samsung Electronics. "The Galaxy Tab S6 Lite (2024) and its S Pen are the ultimate companions for seamlessly blending productivity with entertainment and creativity, enabling people to do more of what they enjoy on the go."

Samsung is ready with a GDDR7 memory chip rated at an oddly-specific 28 Gbps. This speed aligns with the reported default memory speeds of next-generation NVIDIA GeForce RTX "Blackwell" GPUs. The Samsung GDDR7 memory chip bearing model number K4VAF325ZC-SC28, pictured below, ticks at 3500 MHz, yielding 28 Gbps (GDDR7-effective) memory speeds, and comes with a density of 16 Gbit (2 GB). This isn't Samsung's only GDDR7 chip at launch, the company also has a 32 Gbps high performance part that it built in hopes that certain high-end SKUs or professional graphics cards may implement it. The 32 Gbps GDDR7 chip, bearing the chip model number K4VAF325ZC-SC32, offers the same 16 Gbit density, but at a higher 4000 MHz clock. The Samsung website part-identification pages for both chips say that the parts are sampling to customers, which is usually just before it enters mass-production, and is marked "shipping."

Leaked Samsung PBSSD presentation material popped up online a couple of days prior to the kick-off day of NVIDIA's GTC 2024 conference (March 18)—reports (at the time) jumped on the potential introduction of a "petabyte (PB)-level SSD solution," alongside an enterprise subscription service for the US market. Tom's Hardware took the time to investigate this matter—in-person—on the showroom floor up in San Jose, California. It turns out that interpretations of pre-event information were slightly off—according to on-site investigations: "despite the name, PBSSD is not a petabyte-scale solid-state drive (Samsung's highest-capacity drive can store circa 240 TB), but rather a 'petascale' storage system that can scale-out all-flash storage capacity to petabytes."

Samsung showcased a Supermicro Petascale server design, but a lone unit is nowhere near capable of providing a petabyte of storage—the Tom's Hardware reporter found out that the demonstration model housed: "sixteen 15.36 TB SSDs, so for now the whole 1U unit can only pack up to 245.76 TB of 3D NAND storage (which is pretty far from a petabyte), so four of such units will be needed to store a petabyte of data." Company representatives also had another Supermicro product at their booth: "(an) H13 all-flash petascale system with CXL support that can house eight E3.S SSDs (with) four front-loading E3.S CXL bays for memory expansion."

Without making much noise, AMD lifted the memory overclocking limits of the Radeon RX 7900 GRE graphics card with its latest Adrenalin 24.3.1 WHQL drivers, TechPowerUp found. The changelog is a bit vague and states "The maximum memory tuning limit may be incorrectly reported on AMD Radeon RX 7900 GRE graphics products."—we tested it. The RX 7900 GRE has been around since mid-2023, but gained prominence as the company gave it a global launch in February 2024, to help AMD better compete with the NVIDIA GeForce RTX 4070 Super. Before this, the RX 7900 GRE had started out its lifecycle as a special edition product confined to China, and its designers had ensured that it came with just the right performance positioning that didn't end up disrupting other products in the AMD stack. One of these limitations had to do with the memory overclocking potential, which was probably put in place to ensure that the RX 7900 GRE has a near-identical total board power as the RX 7800 XT.

Shortly after the global launch of the RX 7900 GRE, and responding to drama online, AMD declared the limited memory overclocking range a bug and promised a fix. The overclocking limits are defined in the graphics card VBIOS, so increasing those limits would mean shipping BIOS updates for over a dozen SKUs from all the major vendors, and requiring users to upgrade it by themselves. Such a solution isn't very practical, so AMD implemented a clock limit override in their new drivers, which reprograms the power limits on the GPU during boot-up. Nicely done, good job AMD!

Mobile tech tipster, Revegnus, has highlighted an interesting Samsung presentation slide—according to machine translation, the company's electronics division is already responding to an anticipated growth of "client-side large language model" service development. This market trend will demand improved Universal Flash Storage (UFS) interface speeds—Samsung engineers are currently engaged in: "developing a new product that uses UFS 4.0 technology, but increases the number of channels from the current 2 to 4." The upcoming "more advanced" UFS 4.0 storage chips could be beefy enough to be utilized alongside next-gen mobile processors in 2025. For example; ARM is gearing up "Blackhawk," the Cortex-X4's successor—industry watchdogs reckon that the semiconductor firm's new core is designed to deliver "great Large Language Model (LLM) performance" on future smartphones. Samsung's roadmap outlines another major R&D goal, but this prospect is far off from finalization—their chart reveals an anticipated 2027 rollout. The slide's body of text included a brief teaser: "at the same time, we are also actively participating in discussions on the UFS 5.0 standard."

During its 55th annual shareholders' meeting, Samsung Electronics announced its entry into the AI processor market with the upcoming launch of its Mach-1 AI accelerator chips in early 2025. The South Korean tech giant revealed its plans to compete with established players like NVIDIA in the rapidly growing AI hardware sector. The Mach-1 generation of chips is an application-specific integrated circuit (ASIC) design equipped with LPDDR memory that is envisioned to excel in edge computing applications. While Samsung does not aim to directly rival NVIDIA's ultra-high-end AI solutions like the H100, B100, or B200, the company's strategy focuses on carving out a niche in the market by offering unique features and performance enhancements at the edge, where low power and efficient computing is what matters the most.

According to SeDaily, the Mach-1 chips boast a groundbreaking feature that significantly reduces memory bandwidth requirements for inference to approximately 0.125x compared to existing designs, which is an 87.5% reduction. This innovation could give Samsung a competitive edge in terms of efficiency and cost-effectiveness. As the demand for AI-powered devices and services continues to soar, Samsung's foray into the AI chip market is expected to intensify competition and drive innovation in the industry. While NVIDIA currently holds a dominant position, Samsung's cutting-edge technology and access to advanced semiconductor manufacturing nodes could make it a formidable contender. The Mach-1 has been field-verified on an FPGA, while the final design is currently going through a physical design for SoC, which includes placement, routing, and other layout optimizations.

Samsung Electronics showed off its latest graphics memory innovations at GTC, with an exhibit of its new 32 Gbps GDDR7 memory chip. The chip is designed to power the next generation of consumer and professional graphics cards, and some models of NVIDIA's GeForce RTX "Blackwell" generation are expected to implement GDDR7. The chip Samsung showed off at GTC is of the highly relevant 16 Gbit density (2 GB). This is important, as NVIDIA is rumored to keep graphics card memory sizes largely similar to where they currently are, while only focusing on increasing memory speeds.

The Samsung GDDR7 chip shown is capable of its 32 Gbps speed at a DRAM voltage of just 1.1 V, which beats the 1.2 V that's part of JEDEC's GDDR7 specification, which along with other power management innovations specific to Samsung, translates to a 20% improvement in energy efficiency. Although this chip is capable of 32 Gbps, NVIDIA isn't expected to give its first GeForce RTX "Blackwell" graphics cards that speed, and the first SKUs are expected to ship with 28 Gbps GDDR7 memory speeds, which means NVIDIA could run this Samsung chip at a slightly lower voltage, or with better timings. Samsung also made some innovations with the package substrate, which decreases thermal resistance by 70% compared to its GDDR6 chips. Both NVIDIA and AMD are expected to launch their first discrete GPUs implementing GDDR7, in the second half of 2024.

TrendForce reports that anticipation of NAND Flash price hikes into Q2 has motivated certain suppliers to minimize losses and lower costs in hopes of returning to profitability this year. Kioxia and WD led the charge from March, boosting their capacity utilization rates to nearly 90%—a move not widely adopted by their competitors.

TrendForce points out that to meet the demand surge in the second half of the year, especially given Kioxia and Western Digital's currently low inventory, the production increase is mainly targeting 112-layer and select 2D products. This strategy is expected not only to secure profitability within the year but also to contribute to a projected 10.9% rise in the annual NAND Flash industry supply bit growth rate for 2024.

TrendForce reports that significant capital investments have occurred in the memory sector due to the high ASP and profitability of HBM. Senior Vice President Avril Wu notes that by the end of 2024, the DRAM industry is expected to allocate approximately 250K/m (14%) of total capacity to producing HBM TSV, with an estimated annual supply bit growth of around 260%. Additionally, HBM's revenue share within the DRAM industry—around 8.4% in 2023—is projected to increase to 20.1% by the end of 2024.

HBM supply tightens with order volumes rising continuously into 2024
Wu explains that in terms of production differences between HBM and DDR5, the die size of HBM is generally 35-45% larger than DDR5 of the same process and capacity (for example, 24Gb compared to 24Gb). The yield rate (including TSV packaging) for HBM is approximately 20-30% lower than that of DDR5, and the production cycle (including TSV) is 1.5 to 2 months longer than DDR5.

Samsung Electronics is all set to discuss the future of AI, alongside Jensen Huang, at NVIDIA's upcoming GTC 2024 conference. South Korean insiders have leaked the company's intentions, only days before the event's March 18 kickoff time. Their recently unveiled 36 GB HBM3E 12H DRAM product is expected to be the main focus of official presentations—additionally, a new storage subscription service is marked down for a possible live introduction. An overall "Redefining AI Infrastructure" presentation could include—according to BusinessKorea—a planned launch of: "petabyte (PB)-level SSD solution, dubbed 'PBSSD,' along with a subscription service in the US market within the second quarter (of 2024) to address the era of ultra-high-capacity data."

A Samsung statement—likely sourced from leaked material—summarized this business model: "the subscription service will help reduce initial investment costs in storage infrastructure for our customers and cut down on maintenance expenses." Under agreed upon conditions, customers are not required to purchasing ultra-high-capacity SSD solutions outright: "enterprises using the service can flexibly utilize SSD storage without the need to build separate infrastructure, while simultaneously receiving various services from Samsung Electronics related to storage management, security, and upgrades." A special session—"The Value of Storage as a Service for AI/ML and Data Analysis"—is alleged to be on the company's GTC schedule.

With the effective reduction of production by suppliers, the price of memory is rebounding, and the semiconductor memory market finally shows signs of recovery. From the perspective of market dynamics and demand changes, NAND Flash, as one of the two major memory products, is experiencing a new round of changes. Since 3Q23, NAND Flash chip prices have been on the rise for several consecutive months. TrendForce believes that, under the precondition of a conservative market demand prospect for 2024, chip price trends will depend on suppliers' production capacity utilization.

There have been frequent developments in the NAND flash memory industry chain, with some manufacturers indicating a willingness to raise prices or increase production capacity utilization. Wallace C. Kou, General Manager of NAND Flash Supplier SIMO, stated that prices for the second quarter of NAND Flash have already been settled down, which will increase by 20%; some suppliers have started to make profits in the first quarter, and most suppliers will earn money after the second quarter.