Micron Technology and Nanya Technology Corporation, today announced that they have jointly developed low-power DDR2 (LPDDR2) DRAM technology for mobile and consumer applications with initial die densities up to 1Gb. Developed through the companies' DRAM joint development program (JDP), the LPDDR2 is designed to operate at 1.2-volts, providing as much as a 50-percent power reduction when compared to LPDDR1.
"LPDDR2 DRAM is important for the design of today's mobile applications, prolonging a device's battery life with its low-power consumption and improvement of overall system performance compared to low-power DDR1," said John Schreck, vice president of DRAM design at Micron. "Development of this high-performing LPDDR2 is credit to the swift progress in technology design that we have achieved through our JDP with Nanya. We look forward to growing our relationship with Nanya, continuing to bring industry-leading DRAM design to our customer base."

"The technical success of jointly developed LPDDR2 design has justified the synergetic nature of two major DRAM suppliers, who are committed to serving customers with leading technologies and designs," said Joe Ting, senior vice president of Nanya. "As a new player in the low-power DRAM market, Nanya has planned to launch a series of advanced products with both low power and high performance characteristics in one design, aimed to meet the future needs of the mobile world."