Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced high-volume availability of 30-nanometer (nm) reduced-power DDR3L-RS SDRAM for ultrathin computing devices and tablets. The 2-gigabit (Gb) and 4 Gb solutions reduce power consumption in standby to provide longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

"Micron has been one of the leaders in the development and commercialization of DDR3L-RS and the introduction of its 30 nm product is confirmation of this," said Mike Howard, senior principal analyst, DRAM and Memory at IHS iSuppli. "DDR3L-RS is an excellent option for customers who have tight power budgets and need high performance at a competitive price. We expect many of the next-generation ultrathin platforms to take advantage of DDR3L-RS."

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, has begun mass producing the industry's first two gigabyte (GB), low power double-data-rate 3 (LPDDR3) memory, using 30 nanometer (nm) class* technology, for next-generation mobile devices.

Samsung started mass production of the industry's most advanced mobile DRAM (dynamic random access memory) chip, only 10 months after it began producing the industry's first 30nm-class based 2GB LPDDR2 memory in October, 2011. The new LPDDR3, which marks the first time a 2GB LPDDR3 density is available in one space-saving package, utilizes four LPDDR3 chips stacked together. LPDDR3 is needed for fast processors, high resolution displays and 3D graphics in tablets and smartphones.

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today introduced a new class of 1 GHz, 2-gigabit (Gb) and 4 Gb, 30-nanometer (nm) DDR3 devices, strengthening the company's comprehensive DDR3 portfolio. Designed for the high- performance networking and discrete graphics markets, the new devices feature industry-leading low power use while delivering speeds up to 2133 megatransfers per second (MT/s).

Micron supports its customers in highly competitive market segments with a broad portfolio of DRAM and nonvolatile memory devices that meet the demand for high-performance, cost-efficient memory solutions. "Micron has been successful in creating a complete DRAM portfolio, and this product offering rounds out the broadest DRAM offering in the industry," said Mike Howard, senior principal analyst, DRAM and Memory at iSuppli.

Following a rapid turn of events, Micron Technology has emerged as a front-runner in the race to buy out ailing Japanese DRAM major Elpida. Elpida revealed Micron as the winner of the second round of bidding for the right to negotiate exclusively to buy it. DRAMeXchange predicts that Micron may offer up to 300 billion JPY (US $3.75 billion) for the deal, and the Micron+Elpida combine that emerges out of the deal, with its DRAM capacity, could bring about a revolutionary change in the industry.

The Elpida buyout, according to market analysts at TrendForce, will give Micron the capability to compete with Korean DRAM heavyweights SK Hynix and Samsung Electronics, in high-volume DRAM manufacturing. Elpida has been known for investments in DRAM R&D, and isn't behind the two Korean companies in terms of volume manufacturing. Its 30 nm-class DRAM yield-rate is nearly mature, while the next-generation 25 nm process is in testing phase.

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced development of its first fully functional DDR4 DRAM module. The company has begun sampling and has received feedback from major customers to support quick implementation for applications in 2013.

It is expected that the enterprise and micro-server markets will take full advantage of the new features and specifications designed into DDR4, accelerating early adoption of the technology. In addition, the fast-growing ultrathin client and tablet markets will also benefit from new opportunities enabled by the power savings and performance features of Micron's DDR4.

EtronTech, which started out as a DRAM IC manufacturer, expanded into PC connectivity solutions, such as USB 3.0 host and webcam controllers, is now shipping its first USB 3.0 flash drive controllers. The EV268-series dual-core controllers come in 2-channel and 4-channel variants, with the ability to offer transfer-rates in excess of 230 MB/s. These controllers are designed to support 30 nm-class and 20 nm-class SLC/MLC/TLC NAND flash memory chips.

With the EV268, Etron entered a small but budding group of companies with USB 3.0 flash-drive controllers: VIA Technology/VIA Labs Inc. (VLI), Phison Electronics, and InnoStor Technology. By Q4 2012, it is estimated that USB 3.0 flash drives will make up 20% of all flash-drives shipped.

In case Elpida is unable to repay its debts due in April and goes insolvent, marking its exit from the DRAM industry, the consequences for not just the DRAM industry, but also the PC industry as a whole, will be huge, note industry observers. On the 15th, Eplida released a statement on the assumed going concern in the company with regards to its debt situation. The company has been unable to recover from its condition despite injections of capital backed by no less than the Japanese government.

Elpida has to repay nearly 40 billion JPY US ($505.8 million) to the government, and another 80 billion JPY (US $1.02 billion) in short-term bank loans. Frantic negotiates are on between the company and its long list of creditors that include the Japanese government and other banks to seek an interim relief from the default, even as the company searches for a cash-source that would alleviate the situation and make it survive. Elpida's situation is different from that of Qimonda, it's larger, has more technologies in the pipeline, and has recently set up 30 nm-class mass-production and is testing 20 nm-class production. In other words, it has much greater potential as a company that contributes to the industry, if it survives. Its exit will leave the industry imbalanced, and dominated by Korean DRAM makers such as Samsung and Hynix, and American Micron Technology, a step closer to oligarchical price-controls, observers note.

Micron Technology, Inc. is extending its legacy of memory leadership by introducing a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin markets. These 2-gigabit (Gb) and 4 Gb "DDR3Lm" solutions focus on low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

The first 2 Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2 Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4 Gb DDR3Lm product delivers the same optimized power efficiency as the 2 Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2 Gb and 4 Gb DDR3Lm will be adopted into Micron's 30-nanometer (nm) class to further optimize the power and performance features, with the 4 Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, announced today that it started producing embedded multi-chip package (eMCP) memory for use in the rapidly expanding market segment for entry- to mid-level smartphones. Samsung's new eMCP solutions come in a wide range of densities, utilizing LPDDR2 (low power double-data-rate 2) DRAM made with 30 nanometer (nm) class process technology and NAND flash memory using 20 nm-class technology.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is the first in the industry to start mass producing 32 gigabyte (GB) memory modules, essential for cloud computing and advanced server systems, using 30 nanometer (nm) class* four gigabit (Gb) DDR3 DRAM chips.

"With this module, Samsung has secured the highest level of product and solution competitiveness in the DRAM market for PC, server and mobile applications," said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. "We also plan to ship more energy-efficient 4Gb DDR3 DRAM based on 20nm-class* process technology in the second half of this year, which will significantly expand the rapidly growing market for green IT memory solutions. Moreover, we intend to keep delivering the greenest memory products with optimal performance for customers," he added.

LSI announced a new high-end enterprise solid state drive (SSD) best suited for heavy-duty database operations. The WarpDrive SLP-300 from LSI is a PCI-Express x8 addon card that is driven by LSI's SAS2008 controller. A number of SandForce-driven SSD modules bearing single-level cell 30 nm-class NAND flash chips provide storage of 300 GB, latency of under 50 μs, capability of 240,000 IOPS for 4K reads, and 200,000 IOPS for 4K writes, and data-rates of 1,400 MB/s read and 1,200 MB/s write. The drive has a MTBF of 2 million hours. Backed by a 3-year warranty, the LSI WarpDrive SLP-300 will be priced at US $11,500 when it releases to market on 29th November.

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced that the industry's first 30-nanometer-class DRAM has just successfully completed customer evaluations, in two gigabit (Gb) densities. With DDR3 SDRAM becoming the predominant main memory this quarter, Samsung's aggressive advancement in process technology will raise productivity and expedite dissemination of high performance, 1.5V and 1.35V DDR3 for servers, desktops and notebook PCs.

"Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market," said Soo-In Cho, president, Memory Division, Samsung Electronics.

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced two high-density memory solutions for mobile devices. The new storage solutions - a 64-gigabyte (GB) moviNAND memory device and a 32GB micro secure digital (microSD) memory card - satisfy mobile handset designers' requirements for advanced compact high-density memory.

"Samsung's high-density memory solutions bring the storage capacity levels of computing systems to small, mobile devices," said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics.