In a bid to ensure sufficient supply of NAND flash memory to meet the growing demands of not just PC, but also smartphone markets, China's Tsinghua Unigroup and Intel are in talks to license-manufacture 64-layer 3D NAND flash, based on existing IMFlash Technologies designs. IMFlash is a joint-venture between Intel and Micron Technology. Tsinghua Unigroup is one of the biggest beneficiaries of the Chinese Government's ambitious plan to invest RMB 1 trillion (USD $158 billion) over the next five years, to increase China's semiconductor self-sufficiency to 70 percent, by 2025.

The move will significantly increase supply of NAND flash memory, and is seen as a market threat to Korean NAND flash giants Samsung and SK Hynix, and Japanese Toshiba. IMFlash Technology released its first 64-layer 3D NAND flash to the market in 2017, and is currently developing a 96-layer 3D NAND flash chip, which, along with newer 10 nm-class silicon fabrication process, could double densities over the current 64-layer chips.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) - the PM1643 - for use in next-generation enterprise storage systems. Leveraging Samsung's latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36 TB high-capacity lineup introduced in March 2016.

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512 Gb V-NAND chips. These super-dense 1 TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.

Today, Intel announced the Intel SSD DC P4510 Series for data center applications. The P4510 Series uses 64-layer TLC Intel 3D NAND to enable end users to do more per server, support broader workloads and deliver space-efficient capacity. The P4510 Series enables up to four times more terabytes per server and delivers up to 10 times better random read latency at 99.99 percent quality of service than previous generations. The drive can also deliver up to double the input-output operations per second (IOPS) per terabyte. The 1 and 2TB capacities have been shipping to cloud service providers (CSPs) in high volume since August 2017, and the 4 and 8TB capacities are now available to CSPs and channel customers. All capacities are in the 2.5-inch 15 mm U.2 form factor and utilize a PCIe NVMe 3.0 x4 connection.

To accelerate performance and simplify management of the P4510 Series PCIe SSDs and other PCIe SSDs, Intel is also delivering two new technologies that work together to replace legacy storage hardware. Intel Xeon Scalable processors include Intel Volume Management Device (VMD), enabling robust management such as surprise insertion/removal and LED management of PCIe SSDs directly connected to the CPU. Building on this functionality, Intel Virtual RAID on CPU (VROC) uses Intel VMD to provide RAID to PCIe SSDs. By replacing RAID cards with Intel VROC, customers are able to enjoy up to twice the IOPs performance and up to a 70 percent cost savings with PCIe SSDs directly attached to the CPU, improving customer's return on their investments in SSD-based storage.

Plextor today introduced its latest line of value SATA SSDs, under the M8V series. Available in 2.5-inch and M.2-2280 form-factors, the drives leverage SATA 6 Gbps interface, combining Toshiba's latest-generation 64-layer BiCS TLC NAND flash memory, with Silicon Motion SM2258 controller. This controller offers LPDC and redundant array of NAND flash. Both variants come in capacities of 128 GB, 256 GB, and 512 GB.

Performance differs by capacity variants. All three capacity-variants read at speeds of up to 560 MB/s. The 128 GB, 256 GB, and 512 GB variants write (sequentially) at speeds of up to 400 MB/s, up to 510 MB/s, and up to 520 MB/s, respectively. Their 4K random-access speeds are rated at 60,000/70,000 IOPS (reads/writes), 81,000/80,000 IOPS, and 82,000/81,000 IOPS, respectively. Plextor rates their endurance at 70 TBW for the 128 GB variant, 140 TBW for the 256 GB variant, and 280 TBW for the 512 GB variant. Plextor is backing these drives with 3-year warranties.

Micron Technology, Inc. today launched the Micron 5200 series of SATA solid state drives (SSDs), maintaining industry-leading performance, consistency, capacity, reliability, and overall infrastructure value. Built on Micron's new industry-leading 64-layer 3D NAND technology, the Micron 5200 series of SSDs offers a cost-optimized SATA platform for business-critical virtualized workloads that cripple on a hard drive, such as OLTP, BI/DSS, VDI, block/object and media streaming.

Leveraging the proven architecture, performance and capacity of the well-regarded 5100 SATA SSDs, the Micron 5200 series is engineered to deliver a fast, easy and cost-effective enterprise storage solution to replace existing hard drives and legacy SSDs. Micron 5200 SSDs immediately deliver better total cost of ownership and improve data center efficiency through server and storage platform consolidation, reducing IT costs and simplifying infrastructure and maintenance. Now it is easier than ever before for enterprises to add more flash into the data center and get more out of server deployments.

Samsung Electronics America, Inc. today introduced the 860 PRO and 860 EVO solid state drives (SSDs), the most up-to-date additions to the company's SATA interface lineup. The products are aimed at consumers who require fast, reliable performance across various applications, from everyday computing to heavy workloads and graphic-intensive operations. Building on the successful launch of the 850 PRO and 850 EVO - the industry's first consumer SSDs with V-NAND technology - the 860 PRO and 860 EVO achieve industry-leading performance for SATA SSDs, offering enhancements in speed, reliability, compatibility and capacity.

"The new 860 PRO and 860 EVO SSDs combine the latest 512Gb and 256Gb 64-layer V-NAND, up to 4GB LPDDR4 mobile DRAM and a new MJX controller to elevate the user experience for both consumers and businesses," said Un-Soo Kim, senior vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "Samsung will continue to fuel meaningful innovations in the consumer SSD space and drive growth of the overall memory industry for years to come."

Crucial started selling all four models of its premium SATA SSD, the MX500. The drive was launched earlier this month. It comes in 250 GB, 500 GB, 1 TB, and 2 TB variants; and in the 2.5-inch form-factor, with SATA 6 Gbps interface. M.2-2280 variants with SATA interface, which were shown off at the 2018 International CES, could launch a little later this year. The 250 GB variant is priced (MSRP) at USD $79.99 ($0.31 per GB), the 500 GB variant at $139.99 ($0.27 per GB), the 1 TB variant $259.99 ($0.25 per GB), and the range-topping 2 TB variant $499.99 ($0.24 per GB). All four models come with 5-year warranties.

Crucial MX500 combines Micron's 2nd generation 64-layer 3D TLC NAND flash memory with a Silicon Motion SM2258 controller, and a custom firmware by Crucial. The NAND flash chips by design offer the same levels of power-loss protection as drives that need capacitor banks to do so. Among its features are Dynamic Write Acceleration (SLC-cached writes), and Redundant Array of Independent NAND (RAIN). All four variants offer sequential transfer rates of up to 560 MB/s with up to 510 MB/s writes, and 4K random access performance ratings of up to 95,000/91,000 IOPS (reads/writes).

Autobuy, a popular online shopping site in Taiwan, recently listed Intel's upcoming 760p and 660p M.2 NVMe SSDs on their store. The SSD 760p will be manufactured under Intel's 64-layer 3D NAND technology and feature TLC (triple-level-cell) NAND. It's obviously the faster of the two with a sequential read speed up to 3,200 MB/s and a write speed up to 1,600 MB/s. The drive offers random access reads up to 350,000 IOPS and writes up to 280,000 IOPS. Intel will offer this model in capacities of 128 GB, 256 GB, 512 GB, 1 TB, and 2 TB. TigerDirect listed the pricing for them at $96, $120, $240, $448, and $893, respectively.

The SSD 660p is Intel's budget-friendly this time around. Therefore, it will use QLC (quad-level-cell) NAND despite being manufactured with the same technology as its older brother. This SSD can reach up to 1,800 MB/s in sequential read and up to 1,200 MB/s in sequential write speeds with random access read and write performance in the range of 150,000 IOPS. Surprisingly, Intel won't be offering this model in the 128 GB and 256 GB capacities. Instead, the lowest capacity model will start from 512 GB and make its way up to 2 TB. Unfortunately, pricing wasn't available at the time of this article.

Toshiba throughout 2017 made big moves in the flash storage industry, particularly its bitter falling out with WD/SanDisk. The company today is more innovative than ever. Its 2018 International CES booth had a mix of products by the original Toshiba digital storage products division, and its client-focused, US-based, former OCZ division. The star-attraction isn't some big PCIe add-on card SSD that can push a dozen terabytes per second; but the modest RC100 M.2 NVMe drive. Drives like it could make NVMe storage affordable for upper-mainstream gaming PC builders throughout 2018.

The RC100 has been exhaustively detailed in one of our older articles. It's an M.2-2242 drive with PCIe gen 3.0 x2 interface, and more than triple the transfer rates of the fastest SATA SSD you can find. This drive will be gulped down by both the DIY and OEM markets. Next up, is the TR200 entry-level SATA SSD launched last October, targeted at those still clinging onto HDDs or first-time builders. It features Toshiba's 64-layer TLC NAND flash to achieve some of the lowest price-per-gigabyte ratios.

Crucial, a leading global brand of memory and storage upgrades, today announced the availability of the Crucial MX500 SSD. The new drive features second generation Micron 3D NAND technology and is 45 times more energy efficient than a typical hard drive. Available in capacities up to 2TB in the 2.5-inch form factor and up to 1TB in the M.2 form factor, the MX500 has sequential reads/writes up to 560/510 MB/s and random reads/writes up to 95K/90K IOPS.

"This next generation MX500 SSD features a stackable 64-layer, 256-gigabit component. Micron's floating gate NAND is designed with CMOS Under the Array (CUA), which allows us to minimize the footprint of the die. At 59 square millimeters, it's among the world's smallest 256-gigabit die," said Jon Tanguy, Crucial Senior SSD Product Engineer. "Our engineering team has incorporated this leading-edge NAND technology in an SSD that includes all the advanced features Crucial customers have come to expect to keep their data safe."

Following its early-CES launch, we have more details of Toshiba's "entry-level" M.2 NVMe SSD, the RC100. This drive is designed to offer significantly higher performance than SATA SSDs, at a tiny (10-15 percent) price premium over the fastest SATA SSDs. This market has been made inroads to by companies like ADATA, with their XPG SX6000-series. The RC100, offers not only NVMe performance, but also a more compact size. The drive is built in the M.2-2242 form-factor (42 mm long). It will fit on any motherboard that supports M.2-2280 drives, you just have to move the fastening nut to an inner hole marked "42."

Toshiba RC100 drives combine an in-house developed controller with Toshiba 64-layer BiCS Flash TLC memory. The drive features PCI-Express 3.0 x2 host interface, and takes advantage of the NVMe 1.2 protocol. It offers sequential transfer rates of up to 1,620 MB/s reads, with up to 1,130 MB/s writes; and 4K random access performance of up to 160,000 IOPS reads, and 120,000 IOPS writes. The drive comes in capacities of 120 GB, 240 GB, and 480 GB, and is backed by a 3-year warranty.

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, will be highlighting the use of its industry-leading BiCS FLASH 3D memory in several applications - including its new lineup of NVMe SSDs, the RC100 Series.

At CES, TMA is collaborating with its customers and technology partners to take on the future - together. Toshiba was the first company in the world[1] to announce 3D flash memory technology, which effectively addresses the processing, storage and management of the growing volume of data generated worldwide. Recent announcements see the company continuing to lead the industry forward, including the introduction of a 96-layer 512Gb die; the debut of the industry's first[2] flash memory device with quadruple-level cell (QLC) technology; and the addition of Through Silicon Via (TSV) technology. Already enabling the enterprise, data center, PC and mobile applications of today, TMA's BiCS FLASH has paved the way for the applications of tomorrow. In everything from artificial intelligence and virtual reality to a growing number of automotive applications (such as infotainment), high performance computing and the ever-expanding "internet of things," storage density needs will climb higher and higher - and BiCS FLASH was designed with this in mind.

PLEXTOR, a leading manufacturer of award-winning solid-state drives (SSDs) and other high-performance digital storage devices for consumers, today announced the launch of its newest NVMe PCIe SSD the M9Pe Series. The new M9Pe SSD Series has adopted advanced 64-layer 3D NAND and flagship controller along with exclusive PlexNitro, smart cache technology, delivering unprecedented sequential read/write up to 3,200/2,100 MB/s and random read/write up to 400,000/300,000 IOPS. The M9Pe puts improved performance and durability in its crosshairs.

Aimed at high-level PC gaming such as eSports, the M9Pe boasts of its superior components to deliver less lags and 20% faster boot up times compared to a typical SATA drive. The new M9Pe (HHHL/AIC version only) also sports a new eye-catching design with its programmable 3-mode RGB LED lights for the perfect visual appeal on any desktop gaming setup. Similar to its predecessors, the new M9Pe features a high-performing thermal heatsink (M9PeY and M9PeG only) to help regulate SSD temperatures during prolonged gaming sessions resulting to stabilized performance.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung's latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.

"The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards," said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world."

Toshiba Memory Corporation, the world leader in memory solutions, has enhanced its line-up of client SSDs with the launch of premium models in its XG5-P series. The new NVM Express (NVMe) client SSDs improve on the performance of the current XG5 series models and double the maximum capacity to 2 TB. Sample shipments to OEM customers start today in limited quantities, and Toshiba Memory Corporation will gradually increase shipments from the first calendar quarter of 2018.

The XG5-P series also utilizes a PCI Express (PCIe) Gen3 x4 lane and NVM Express Revision 1.2.1 interface, and delivers performance of up to 3000 MB/s sequential read and 2200 MB/s sequential write, and up to 320,000 IOPS random read and 265,000 IOPS random write. Its random read/write performance in full access range is approximately 55% better than that of standard XG5 series products. At the same time, low power consumption is maintained at less than 60 mW during operation.

Toshiba Memory Corporation, the world leader in memory solutions, has today started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32 GB, 64 GB, 128 GB and 256 GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

Samsung is the most well-regarded company when it comes to consumer SSDs. even if their SSD solutions do usually carry a premium versus the competition, that price delta is usually well justified: Samsung's SSDs are frequently the most reliable, fastest option in the market. Samsung's 960 PRO and 960 EVO SSDs have done a good job of clarifying the company's market positioning, and now, the successors for those Samsung SSDs have already surfaced.

The next-gen Samsung NVMe drives carry the PM981 code-name - where "PM" stands for TLC NAND (in this case, based on 64-layer 3-bit per cell V-NAND chips), "9" stands for Samsung's highest performing solutions, and "81" stands for the part number - two tiers ahead of Samsung's 960 series. It's expected that there will be a 970 part, since Samsung seems to be steering away from the "EVO" and "PRO" monikers to differentiate products according to performance - a straight numeral is expected to be the norm going forward. For now, the parts that have surfaced carry 512 GB and 1 TB of memory. These will make use of Samsung's Polaris V2 controller (with a metal heatsink over it to aid in cooling), and deliver 3,000 MB/s and 3,200 MB/s sequential read speeds (for the 512 GB and 1 TB versions respectively) and 1,800 MB/s and 2,400 MB/s sequential write, respectively. The models surfaced from a Vietnamese retailer, which has them going for $233 and $439 - which doesn't mean this will be the final consumer retail price, but seems reasonable for the technology and performance tier of these NVMe SSD solutions.

Non-volatile memory often has the first pick of a new silicon fabrication process, as it is a low-risk development. A NAND flash chip is essentially a sea of transistors, with a fraction of R&D cost of something as specialized as a CPU die. It should come as no surprise, then, that the first chips to be built on Intel's swanky new 10 nanometer fabs will be a 64-layer 3D NAND flash memory, the first of its kind for data center applications.

With its 10 nm process, Intel is introducing FinFET Hyper Scaling, Intel will increase transistor densities by 2.7 times over the kind of densities one would traditionally expect from 10 nm. This lets the company scale up NAND flash storage densities by just that much more. The first 10 nm 64-layer 3D NAND flash chips will have high data densities, while at the same time, Intel will be able to push low volumes, characteristic of a new process. This explains why the first SSDs built with these chips are targeted at data-centers, so fairly expensive, high-capacity SSDs can be pushed to customers that can afford them.

Samsung Electronics America, Inc. today announced the introduction of the Samsung Portable SSD T5 - the newest portable solid state drive (PSSD) that raises the bar for the performance of external memory products. The T5, built with Samsung's latest 64-layer V-NAND technology, delivers industry-leading transfer speeds with encrypted data security in a compact and durable design, making it easier than ever for consumers to access their most valuable data anywhere, at any time.

"Samsung has been pushing the envelope of what is possible in portable storage and solid state drives for years, and the Portable SSD T5 continues our legacy of leadership and innovation," said Un-Soo Kim, Senior Vice President of Brand Product Marketing, Memory Business at Samsung Electronics. "We are confident that the T5 will exceed consumers' expectations for external storage by offering faster speeds and a solid design that is lightweight and conveniently pocket-sized. It is the ideal portable storage product for consumers and professionals who are in search of a fast, durable and secure device."

At its Flash Memory Summit booth, Samsung revealed plans to launch new consumer-segment SSDs which succeed its current 960 EVO and 960 Pro series. Over 2017-18, the company is expected to launch the new 970 series and 980 series NVMe SSDs. Tom's Hardware predicts that Samsung could dispose of the "EVO" and "Pro" brand extensions to a static model number (such as 960 or 950). Samsung could tap into its current 3-bit per cell (TLC) 64-layer 3D V-NAND flash memory for the 970 and 980 series. With the company busy capacity-building for 4-bit per cell (QLC), the new SSD lines may not feature it, although Samsung is capable of surprising with aggressive launch cycles. As drives supporting the NVMe protocol, the 970 and 980 series could ship in modern form-factors, such as M.2 and U.2.

Toshiba Memory Corporation, the world leader in memory solutions, today announced the launch of the SG6 series, a new line-up of SATA client SSDs utilizing Toshiba Memory Corporation's cutting-edge 64-layer, 3-bit-per-cell (TLC) BiCS FLASH. Sample shipments to PC OEM customers start today in limited quantities, and Toshiba Memory Corporation will gradually increase shipments from the fourth calendar quarter of this year.

The new SG6 series SSDs features a SATA Revision 3.3, 6.0Gbit/s interface, and delivers performance of up to 550MB/s sequential read and 535MB/s sequential write. Thanks to improved flash memory management and performance, active power consumption is cut by approximately 40% compared to previous generation products. This improvement can extend battery life, a plus for many applications including mobile computing.

Toshiba America Electronic Components, Inc. (TAEC), a committed technology leader, today unveiled the development of two new flagship enterprise solid state drive (SSD) solutions, the TMC PM5 12 Gbit/s SAS series and the CM5 NVM Express (NVMe) series. Development is expected to be completed in the fourth quarter. Both product lines are built with TMC's latest 64 layer, 3-bit-per-cell enterprise-class TLC (triple-level cell) BiCS FLASH2, making it possible for today's demanding storage environments to expand the use of flash with cost-optimized 3D flash memory. With all-new, advanced features, the innovative CM5 and PM5 series raise the bar in performance capabilities and create new opportunities for businesses to leverage the power of flash storage.

Offering up to 30.72TB in a 2.5-inch form factor, the TMC PM5 series introduces a full range of endurance and capacity SAS SSDs enabling data centers to effectively address big data demands while streamlining storage deployments. With the industry's first MultiLink SAS architecture, the PM5 series is able to deliver the fastest performance the market has seen from a SAS-based SSD with up to 3,350 MB/s of sequential read and 2,720 MB/s of sequential write6 in MultiLink mode and up to 400,000 random read IOPS in narrow or MultiLink mode. The PM5 series' 4-port MultiLink design is an additional technology to achieve high performance, close to PCI EXPRESS (PCIe)8 SSDs, enabling legacy infrastructures to increase productivity without having to be re-architected from the ground up. Furthermore, PM5 SSDs support multi-stream write technology, a feature that intelligently manages and groups data types to minimize write amplification and minimize garbage collection, translating into reduced latency, improved endurance, increased performance and Quality of Service (QoS).

Toshiba's first retail SSDs to use the company's 64-layer BiCS3 3D NAND technology have been announced by Toshiba. The successors to the company's Trion 100 and Trion 150 SSDs still carry some vestiges of OCZ branding in the product logo and TR (short for Trion) moniker. This is Toshiba's first generation of mainstream, mass-market-suitable 3D NAND flash.

These drives make use of a DRAM-less controller design, and will be available in capacities ranging from 240 GB up to 960 GB. Toshiba advertises 550 MB/s read and 525 MB/s write speeds. 4K Random Read IOPS stand at 87K, while 4K Random Write IOPS go up to 87K. The endurance on the models will range from 60 to 240 TB according to capacity, and these carry the same three-year warranty as previous Trion SSDs. Pricing has not yet been announced, although the TR200 series will start shipping to retailers this fall.

Western Digital Corp. today announced its successful development of four bits per cell, X4, flash memory architecture offering on 64-layer 3D NAND, BiCS3, technology. Building on its pioneering innovation of X4 for 2D NAND technology and past success in commercializing it, the company has now developed X4 for 3D NAND by leveraging its deep vertical integration capabilities. These include silicon wafer processing, device engineering to provide sixteen distinct data levels in every storage node, and system expertise for overall flash management. BiCS3 X4 technology delivers an industry-leading storage capacity of 768 gigabits on a single chip, a 50 percent increase from the prior 512 gigabit chip that was enabled with the three bits per cell (X3) architecture. Western Digital will showcase removable products and solid-state drives built with BiCS3 X4 and systems capabilities in August at the Flash Memory Summit in Santa Clara, California.

"The implementation of X4 architecture on BiCS3 is a significant development for Western Digital as it demonstrates our continued leadership in NAND flash technology, and it also enables us to offer an expanded choice of storage solutions for our customers," said Dr. Siva Sivaram, executive vice president, Memory Technology, Western Digital. "The most striking aspect in today's announcement is the use of innovative techniques in the X4 architecture that allows our BiCS3 X4 to deliver performance attributes comparable to those in BiCS3 X3. The narrowing of the performance gap between the X4 and X3 architectures is an important and differentiating capability for us, and it should help drive broader market acceptance of X4 technology over the next several years."

Samsung is one of the top tech players in the world, with tendrils extending through almost all conceivable markets. That position, and the varied sources of income the company has at its disposal, gives it enough leeway to make investments that echo throughout the industry, Now, after a 15 trillion won investment (something like $13 billion), the company's latest V-NAND fab has started production in Pyeongtaek.

The fab will produce the firm's latest three-dimensional, 64-layer 256Gb V-NAND chips. Here's hoping the expected influx of higher quantities of NAND memory will allows us poor users to see a stop to the NAND pricing increase we've been seeing of late. Not everybody needs all the NAND available in smartphones.