NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

Samsung Electronics, today announced its demonstration of the world's first in-memory computing based on MRAM (Magnetoresistive Random Access Memory). The paper on this innovation was published online by Nature on January 12, and is set to be published in the upcoming print edition of Nature. Titled 'A crossbar array of magnetoresistive memory devices for in-memory computing', this paper showcases Samsung's leadership in memory technology and its effort to merge memory and system semiconductors for next-generation artificial intelligence (AI) chips.

The research was led by Samsung Advanced Institute of Technology (SAIT) in close collaboration with Samsung Electronics Foundry Business and Semiconductor R&D Center. The first author of the paper, Dr. Seungchul Jung, Staff Researcher at SAIT, and the co-corresponding authors Dr. Donhee Ham, Fellow of SAIT and Professor of Harvard University and Dr. Sang Joon Kim, Vice President of Technology at SAIT, spearheaded the research.

Samsung Electronics, a world leader in advanced semiconductor technology, today unveiled plans for continuous process technology migration to 3- and 2-nanometer (nm) based on the company's Gate-All-Around (GAA) transistor structure at its 5th annual Samsung Foundry Forum (SFF) 2021. With a theme of "Adding One More Dimension," the multi-day virtual event is expected to draw over 2,000 global customers and partners. At this year's event, Samsung will share its vision to bolster its leadership in the rapidly evolving foundry market by taking each respective part of foundry business to the next level: process technology, manufacturing operations, and foundry services.

"We will increase our overall production capacity and lead the most advanced technologies while taking silicon scaling a step further and continuing technological innovation by application," said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics. "Amid further digitalization prompted by the COVID-19 pandemic, our customers and partners will discover the limitless potential of silicon implementation for delivering the right technology at the right time."

Everspin Technologies, Inc., the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced an amendment of its Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) with GLOBALFOUNDRIES (GF ), the world's leading specialty foundry. Everspin and GF have been partners on 40 nm, 28 nm, and 22 nm STT-MRAM development and manufacturing processes and have now updated their agreement to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin is in production of discrete STT-MRAM solutions on 40 and 28 nm, including its award winning 1 Gb DDR4 device. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.

GLOBALFOUNDRIES (GF ) today announced its embedded magnetoresistive non-volatile memory (eMRAM) on the company's 22 nm FD-SOI (22FDX ) platform has entered production, and GF is working with several clients with multiple production tape-outs scheduled in 2020. Today's announcement represents a significant industry milestone, demonstrating the scalability of eMRAM as a cost-effective option at advanced process nodes for Internet of Things (IoT), general-purpose microcontrollers, automotive, edge-AI (Artificial Intelligence), and other low-power applications.

Designed as a replacement for high-volume embedded NOR flash (eFlash), GF's eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28 nm.

Samsung Electronics Co., Ltd., the world leader in semiconductor technology, today announced that it has commenced mass production of its first commercial embedded magnetic random access memory (eMRAM) product based on the company's 28-nanometer (nm) fully-depleted silicon-on-insulator (FD-SOI) process technology, called 28FDS.

As eFlash has faced scalability challenges due to a charge storage-based operation, eMRAM has been the most promising successor since its resistance-based operation allows strong scalability while also possessing outstanding technical characteristics of memory semiconductors such as nonvolatility, random access, and strong endurance. With today's announcement, Samsung has proved its capability to overcome technical hurdles and demonstrated the possibility for further scalability of embedded memory technology to 28nm process node and beyond.

A report via EETimes slates Intel's own working MRAM (Magnetoresistive Random-Access Memory) is ready for production in high-volume manufacturing. MRAM is a nonvolatile memory technology, meaning that it retains information even if there is a change in powerstate (ie, power loss), meaning that it's more akin to a storage device than to, say, RAM.

But why does MRAM matter, really? Well, MRAM is being developed as a long-term candidate to a universal memory solution, replacing both DRAM (a volatile memory technology) and NAND flash (a nonvolatile one), since node scaling with these technologies is becoming increasingly harder. MRAM promises better-scaling (at the foundry level) processes, with much higher yield rates. The fact that MRAM has been demonstrated to be able to achieve 1 ns settling times, better than the currently accepted theoretical limits for DRAM, and much higher write speeds (as much as thousands of times faster) compared to NAND flash.

SMART Modular Technologies, Inc., a subsidiary of SMART Global Holdings, Inc., (NASDAQ: SGH), and a leader in specialty memory, storage and hybrid solutions including memory modules, Flash memory cards and other solid state storage products, today announced that it has begun shipping its nvNITRO Accelerator Card featuring MRAM technology. SMART has partnered with Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of discrete and embedded magnetoresistive random access memory (MRAM), to launch the new Spin-transfer Torque MRAM (STT-MRAM)-based nvNITRO Accelerator Card. The nvNITRO is ideally suited for the most demanding transaction logging applications and, along with enhanced performance features, is designed with plug-and-play capability requiring no changes to system hardware, memory reference, bios or file systems.

MRAM technology is byte-addressable and persistent with very low latency, enabling dramatically improved system performance for many applications. The nvNITRO Accelerator Card fully exploits these unique attributes to provide a disruptive solution for industries where transaction processing and data recording performance are critical. For example, nvNITRO can reduce financial application wait times by reducing latency up to 90% over enterprise SSDs. Based on this performance data, SMART and Everspin will jointly target customers in the financial sector including joint demonstrations of nvNITRO performance at The Trading Show in Chicago, May 9-10.

Researchers at UC Berkeley and UC Riverside have developed a new, ultrafast method for electrically controlling magnetism in certain metals, a breakthrough that could lead to greatly increased performance and more energy-efficient computer memory and processing technologies. The findings of the group, led by Berkeley electrical engineering and computer sciences (EECS) professor Jeffrey Bokor, are published in a pair of articles in the journals Science Advances (Vol. 3, No. 49, Nov. 3, 2017) and Applied Physics Letters (Vol. III, No. 4, July 24, 2017).

Computers use different kinds of memory technologies to store data. Long-term memory, typically a hard disk or flash drive, needs to be dense in order to store as much data as possible. But the central processing unit (CPU) - the hardware that enables computers to compute - requires its own memory for short-term storage of information while operations are executed. Random Access Memory (RAM) is one example of such short-term memory.

Everspin Technologies today announced that Buffalo Memory is introducing a new industrial SATA III SSD that incorporates Everspin's Spin-Torque MRAM (ST-MRAM) as cache memory. In addition to breaking new ground as a SATA III SSD, this product is also the first to specify STMRAM for its cache. Buffalo Memory will showcase the new product at its booth (B-05) at the Embedded Technology 2013 conference held in Yokohama, Japan on November 20-22.

Buffalo's SS6 series SATA III SSD with Everspin ST-MRAM cache improves tolerance for sudden power loss and reduces power consumption. SATA III runs up to 6.0 Gigabits per second, twice the rate of SATA II, which improves quality of service in high data rate applications.

Toshiba Corporation today announced that the company has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the world's lowest power consumption yet reported, indicating that it has the potential to surpass the power consumption efficiency of SRAM as cache memory.

Like all digital products, mobile devices, including smartphones and tablet PCs, rely on high-speed memory to supply the main processor with essential instructions and frequently requested data. Until now SRAM has provided the cache-memory solution. However, improving the performance of SRAM to match advances in mobile products results in increasing current leakage, both during operation and in standby mode, degrading power performance.

Everspin Technologies leads the industry in commercializing the first Spin-Torque Magnetoresistive RAM (ST-MRAM), a new type of high performance and ultra-low latency memory that is expected to transform storage architecture and help drive the continuous evolution of Moore's Law.

ST-MRAM is a performance-optimized Storage Class Memory (SCM) that bridges the role of today's conventional memory with the demands of tomorrow's storage systems by providing non-volatility, high endurance and ultra-low latency. The 64 Mb device is the first product in Everspin's ST-MRAM roadmap that is planned to scale to gigabit density memories with faster speeds. Select customers are now evaluating samples of Everspin's EMD3D064M 64 Mb DDR3 ST-MRAM.

Buffalo launched a new line of SSDs that incorporate MRAM (magnetic random access memory) caches. The caches provide increase tolerance to power loss, and momentarily hold data that's being transacted between the drive and the host, which buys the controller some time to prevent data loss, when the power goes down. Pictures suggest that Buffalo could have SSDs in both SATA and IDE flavors. So far, MRAM cache is the only distinctive feature of a new line of SSDs Buffalo is working on, which it will unveil a little later, at the Embedded Systems Expo (ESEC) 2012.

Hynix Semiconductor Inc. and Toshiba Corporation today announced that they have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next generation memory device. Once technology development is successfully completed, the companies intend to cooperate in manufacturing MRAM products in a production joint venture. Hynix and Toshiba have also extended their patent cross licensing and product supply agreements.

Toshiba recognizes MRAM as an important next-generation memory technology with the potential to sustain future growth in its semiconductor business. Hynix has a cutting-edge memory technology, most notably in manufacturing process optimization and cost competitiveness. The collaboration announced today, between two of the world's leading semiconductor manufacturers in a promising new technology, is expected to make a significant contribution to the continued progress of the world semiconductor industry.

Here's a good story catch found by one of our readers and sent to me. Because of the nature of this post I won't try to rewrite it, otherwise I might make a mistake explaining the technical terms used. The text below is borrowed from the original source of the news - NewScientistTech.

Do you wish your computer was faster? Engineers and physicists from Germany have demonstrated the quickest prototype yet of an advanced form of RAM tipped by hardware manufacturers to be the future of computing. The device is so fast it brushes against a fundamental speed-limit for the process. Magnetoresistive random access memory (MRAM) is a faster and more energy efficient version of the RAM used in computers today, and hardware companies think it will in a few years dominate the market.

NEC Corporation today announced that it has succeeded in developing a new SRAM (Static Random Access Memory) - compatible MRAM that can operate at 250MHz, the world's fastest MRAM (Magnetoresistive Random Access Memory) operation speed. MRAM is expected to be the dominant next-generation memory technology as it realizes ultra fast operation speeds, nonvolatility - ability to retain data with the power off, and unlimited write endurance. Verification at the SRAM speed level proves that the newly-developed MRAM could be embedded in system LSIs as SRAM substitutes in the future.