Micron Technology, Inc., announced today that it is shipping 2GB Hybrid Memory Cube (HMC) engineering samples. HMC represents a dramatic step forward in memory technology, and these engineering samples are the world's first HMC devices to be shared broadly with lead customers. HMC is designed for applications requiring high-bandwidth access to memory, including data packet processing, data packet buffering or storage, and computing applications such as processor accelerators. Micron expects future generations of HMC to migrate to consumer applications within three to five years.

An industry breakthrough, HMC uses advanced through-silicon vias (TSVs)-vertical conduits that electrically connect a stack of individual chips-to combine high-performance logic with Micron's state-of-the-art DRAM. Micron's HMC features a 2GB memory cube that is composed of a stack of four 4Gb DRAM die. The solution provides an unprecedented 160 GB/s of memory bandwidth while using up to 70 percent less energy per bit than existing technologies, which dramatically lowers customers' total cost of ownership (TCO).

Micron Technology, Inc., today announced the availability of a replay-protected monotonic counter (RPMC) feature for their SPI NOR Flash memory devices, which are validated for future Intel Ultrabook platforms. The cost-effective 64Mb density is the sweet-spot solution currently available for immediate platform-enablement activities.

The RPMC feature in Micron's SPI NOR device is the first in a family of cryptographic primitives that will significantly enhance preboot security in cost-sensitive embedded, mobile, and personal computing architectures. The RPMC-enabled device facilitates critical nonvolatile data storage, while making systems resistant to rollback and replay attacks. It enables original equipment manufacturers (OEMs) to further strengthen code/data storage in the boot memory and deliver more secure systems to customers.

Micron Technology, Inc., (Nasdaq:MU) today announced the availability of a replay-protected monotonic counter (RPMC) feature for their SPI NOR Flash memory devices, which are validated for future Intel Ultrabook platforms. The cost-effective 64Mb density is the sweet-spot solution currently available for immediate platform-enablement activities.

The RPMC feature in Micron's SPI NOR device is the first in a family of cryptographic primitives that will significantly enhance preboot security in cost-sensitive embedded, mobile, and personal computing architectures. The RPMC-enabled device facilitates critical nonvolatile data storage, while making systems resistant to rollback and replay attacks. It enables original equipment manufacturers (OEMs) to further strengthen code/data storage in the boot memory and deliver more secure systems to customers.
Micron's 64Mb RPMC-enabled SPI NOR device supports nonvolatile storage and authentication needs that are critical to the chipset security implementation for future Intel Ultrabook platforms and is compliant with Intel's Serial Flash Hardening Product External Architecture Specification. The device, which is available in SO8W and W-DFN 0.8mm packages, also includes improved erase performance to increase throughput and lower the initial cost of manufacturing programming.

Altera Corporation and Micron Technology, Inc. today announced they have jointly demonstrated successful interoperability between Altera Stratix V FPGAs and Micron's Hybrid Memory Cube (HMC). This technology achievement enables system designers to evaluate today the benefits of HMC with FPGAs and SoCs for next-generation communications and high-performance computing designs. The demonstration provides an early proof point that production support of HMC will be delivered with Altera's Generation 10 portfolio, in alignment with market timing, and includes both Stratix 10 and Arria 10 FPGAs and SoCs.

HMC has been recognized by industry leaders and influencers as the long-awaited answer to address the limitations imposed by conventional memory technology, and provides ultra-high system performance with significantly lower power-per-bit. HMC delivers up to 15 times the bandwidth of a DDR3 module and uses 70 percent less energy and 90 percent less space than existing technologies. HMC's abstracted memory allows designers to devote more time leveraging HMC's revolutionary features and performance and less time navigating the multitude of memory parameters required to implement basic functions. It also manages error correction, resiliency, refresh, and other parameters exacerbated by memory process variation. Micron expects to begin sampling HMC later this year with volume production ramping in 2014.

Micron Technology, Inc. (Nasdaq:MU) ("Micron") and Elpida Memory, Inc. ("Elpida") trustees announced today the closing of Micron's acquisition of 100 percent of Elpida's equity, pursuant to a Sponsor Agreement entered into on July 2, 2012 in connection with Elpida's corporate reorganization proceedings conducted under the jurisdiction of the Tokyo District Court. In a related transaction, Micron also announced today the completion of its acquisition of a 24 percent share of Rexchip Electronics Corporation from Powerchip Technology Corporation and certain of its affiliates. The transactions will be recorded for accounting purposes as being effective at 11:59 p.m., Tokyo time, on July 31, 2013.

Elpida's assets include a 300 millimeter (mm) DRAM fabrication facility located in Hiroshima, Japan; an approximate 65 percent ownership interest in Rexchip, whose assets include a 300mm DRAM fabrication facility located in Taiwan; and a 100 percent ownership interest in Akita Elpida Memory, Inc., whose assets include an assembly and test facility located in Akita, Japan. Together with the Rexchip shares acquired from Powerchip, Micron will control approximately 89 percent of Rexchip's outstanding shares and 100 percent of Rexchip product supply. The manufacturing assets of Elpida and Rexchip together can produce more than 185,000 300mm wafers per month, which represents an approximate 45 percent increase in Micron's current manufacturing capacity.

On the 17th of July, Micron Technology announced the appointment of Warren East to the company's Board of Directors, effective immediately. East served as CEO of ARM Holdings PLC from October 2001 to July 1, 2013. "We are extremely pleased to welcome Warren to our Board of Directors," said Micron CEO Mark Durcan. "Warren transformed ARM during his tenure as CEO, and we are confident his contributions will strengthen our board."

East, who also serves as director of De La Rule PLC, joined ARM in 1994 and later became Vice President of Business Operations. Within three years, he was appointed to the Board as Chief Operating Officer. Prior to ARM, East was with Texas Instruments. "I appreciate the opportunity to serve with the Micron team," said East. "With the acquisition of Elpida, Micron is well-positioned to be a growing, dynamic leader in semiconductor memory and a critical contributor to the success of customers in the storage, mobile and computing markets." East is a chartered engineer, Distinguished Fellow of the British Computer Society, Fellow of the Institution of Engineering and Technology, Fellow of the Royal Academy of Engineering and a Companion of the Chartered Management Institute. He earned bachelor and master degrees in Engineering Science from Oxford University and an MBA and honorary doctorate from Cranfield University.

Micron Technology, Inc., today announced that it is sampling next-generation, 16-nanometer (nm) process technology, enabling the industry's smallest 128-gigabit (Gb) multi-level cell (MLC) NAND Flash memory devices. The 16 nm node is not only the leading Flash process, but it is also the most advanced processing node for any sampling semiconductor device. It solidifies Micron's leadership position in storage technology development and delivers on the company's vision to provide the most advanced semiconductor solutions.

Micron's 128 Gb MLC NAND Flash memory devices are targeted at applications like consumer SSDs, removable storage (USB drives and Flash cards), tablets, ultrathin devices, mobile handsets and data center cloud storage. The new 128 Gb NAND Flash memory provides the greatest number of bits per square millimeter and lowest cost of any MLC device in existence. In fact, the new technology could create nearly 6 TB of storage on a single wafer.

Crucial, a leading global brand of memory and storage upgrades, today announced the immediate availability of the Crucial Ballistix Sport XT memory, which offers a new aggressively-styled, taller heat spreader design that improves thermal performance. Designed for gamers and enthusiasts looking for fast and responsive performance, Ballistix Sport XT modules offer XMP profiles for advanced speeds and timings as well as easy BIOS configuration in supported systems.

"The Crucial Ballistix Sport series is designed to provide mainstream users and performance enthusiasts with a reliable, no-hassle gaming experience," said Jeremy Mortenson, senior product manager, Crucial. "The new Sport XT memory offers an attractive new heat spreader styling for gamers who are looking for enhanced thermal performance, and a new colour that complements popular motherboards."

Micron Technology, Inc. today announced a new PCIe all-flash I/O accelerator to improve overall performance in enterprise servers, appliances and storage platforms. The new Micron P420m combines consistent performance with the inherent power efficiency of an all-flash system to deliver improved economics for enterprise data centers. The P420m accelerates performance of today's demanding data center applications, including online transaction processing (OLTP), data warehousing and virtualization.

Ultimately, Micron's P420m ends the wait game for digital data. It features ultra-low latency performance that enables fast and predictable response times to information frequently used in data center environments. When tested against competing PCIe solutions in a MySQL server running an OLTP benchmark, the P420m is the fastest and most consistent performer, delivering more than 3,200 web server requests per second. It handily manages online requests during peak traffic times, improving the overall end-user experience.

Crucial started shipping its M500 line of consumer SSDs. Available in 2.5-inch SATA (7 mm-thick), mSATA, and NGFF M.2 form-factors, the drives combine Micron 20 nm MLC NAND flash with a Marvell-made processor. All three form-factors take advantage of 6 Gb/s SATA. The drive is available in 120 GB, 240 GB, and 480 GB capacities for all three form-factors, while the 2.5-inch gets a 960 GB "terabyte-class" capacity option, as well.

Sequential read speeds on all capacities are as high as 500 MB/s, while sequential write speeds cap out at 130 MB/s and 250 MB/s for the 120 GB and 240 GB variants, respectively; and reach 400 MB/s on the 480 GB and 960 GB variants. The drives are backed by 3-year limited warranties, 1.2 million hours MTBF, and 72 TB total bytes written (TBW) write endurance (that's 40 GB per day). TRIM, NCQ, and SMART are standard issue. The 120 GB, 240 GB, 480 GB, and 960 GB variants are priced at US $129.99, $219.99, $399.99, and $599.99, respectively.

More than 100 developer and adopter members of the Hybrid Memory Cube Consortium (HMCC) today announced they've reached consensus for the global standard that will deliver a much-anticipated, disruptive memory computing solution. Developed in only 17 months, the final specification marks the turning point for designers in a wide range of segments-from networking and high-performance computing, to industrial and beyond-to begin designing Hybrid Memory Cube (HMC) technology into future products.

A major breakthrough with HMC is the long-awaited utilization of advanced technologies to combine highperformance logic with state-of-the-art DRAM. With this first HMC milestone reached so quickly, consortium members have elected to extend their collaborative effort to achieve agreement on the next generation of HMC interface standards.

Micron Technology today announced another addition to its growing lineup of solid state drives (SSDs) targeted at data center appliances and enterprise storage platforms. The new Micron P410m SSD is a high-endurance, high reliability 6 Gb/s Serial Attached SCSI (SAS) drive built to provide the performance necessary for mission-critical tier 1 storage applications that require uninterrupted, 24/7 data access.

SAS is preferred in these applications due to its dual-port interface, which offers the high availability and accessibility customers have come to expect from a SAS drive. The new Micron P410m provides the consistent low latency and balanced read/write performance necessary for tackling the unique workloads of persistent data storage.

Micron Technology, Inc. today introduced the industry's smallest 128-gigabit (Gb) NAND flash memory device utilizing its award-winning 20-nanometer (nm) process technology. The new 128Gb device stores three bits of information per cell, called triple-level-cell (TLC), creating a highly compact storage solution.

Measuring 146 mm², the new 128Gb TLC device is more than 25 percent smaller than the same capacity of Micron's 20 nm multi-level-cell (MLC) NAND device. The 128 Gb TLC device is targeted at the cost-competitive removable storage market (flash cards and USB drives), which is projected to consume 35 percent of total NAND gigabytes in calendar 2013.1 Micron is now sampling the 128Gb TLC NAND device with select customers; it will be in production in calendar Q2.

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, and TE Connectivity (TE), a world leader in connectivity, announced today the availability of a Single-Sided SODIMM and a low-profile single-sided, double data rate 3 (DDR3) SODIMM connector solution to take advantage of the burgeoning market for Ultrabook devices, convertibles, tablets and other thin and light devices. Aimed at providing a reduced-height memory solution for the ultrathin computing market, the new Single-Sided SODIMM, developed by Micron, has components on either the front or back side of the module, but not both. When paired with the single-sided DDR3 SODIMM connector from TE, the total z-height of the overall solution from the motherboard is just 3mm, a 35 percent savings compared to 4.6 mm for a standard SODIMM solution.

Micron's Single-Sided SODIMM is available in a 4 GB, single-rank, x8 configuration. In addition to a reduced height, this new module is built using 30nm DDR3L-RS components that consume less power in standby compared to standard DDR3. Additionally, Single-Sided SODIMMs are pin-to-pin compatible with current DDR3 modules, making them backward compatible with existing DDR3 SODIMM connectors.

Intel made an addition to its SSD 335 line of performance-segment consumer SSDs, which is currently available in just one capacity, 240 GB. The new 180 GB variant (SKU: SSDSC2CT180A4K5) retains the feature-set and rated speeds of its older sibling, boasting of up to 500 MB/s reads, up to 450 MB/s writes, and up to 52,000 IOPS 4K random write throughput. Based on the LSI-SandForce SF-2281 processor, the drive features 20 nm MLC NAND flash chips by IMFlash Technologies (Intel, Micron JV).

In addition, Intel updated the drive body design, which will also apply to newer batches of the 240 GB variant. The new design consists of a brace running the perimeter of the drive (without affecting its 2.5-inch 9 mm-thick size compliance), and a "circuit board" print art. Backed by a 3-year warranty, the Intel SSD 335 180 GB is priced at US $179.99.

Micron Technology, Inc., today announced its next-generation solid state drive (SSD) for data center servers, appliances, and storage platforms that manage the volume and velocity of big data. The new Micron P400m SSD is a high-endurance SATA caching and storage solution that was designed to handle the amassing petabytes of structured and unstructured digital information that is created, stored and accessed every day in data centers.

Data reliability and system uptime have always been primary concerns for data center managers, but the accelerating influx of data and massive demand spikes add new pressures that require different, more responsive storage systems. The Micron P400m was designed precisely for this environment. It offers the high reliability and high endurance that is critical for high-performance storage tiers, accelerating throughput, and responding to the peak demand periods that these new applications create.

Micron Technology, Inc. today introduced the M500 solid state drive (SSD), featuring terabyte-class capacity, new ultra-slim package designs, and increased response times at a more affordable price point. Available to consumers, businesses, and system builders under the Crucial brand, and to OEM customers under the Micron brand, the new M500 SSD is built start-to-finish by Micron, providing the quality and reliability that only a NAND flash memory and SSD manufacturer can provide. Watch this behind-the-scenes video to see how Micron designs and builds SSDs.

Benefits of Advanced NAND Flash Technology

The M500 SSD utilizes Micron's award-winning, 20-nanometer (nm) multilevel cell (MLC) NAND flash to achieve terabyte-class capacity and enable a new level of SSD price competitiveness; the 960 GB Crucial M500 SSD will be initially priced under $600.

Micron Technology, Inc. (Nasdaq:MU) ("Micron") and Elpida Memory, Inc. ("Elpida") today announced that the Japan Fair Trade Commission has cleared Micron's previously announced acquisition of Elpida. Clearance under Japan's Act on Prohibition of Private Monopolization and Maintenance of Fair Trade (Act No. 54 of April 14, 1947) satisfies one of the conditions necessary for consummation of the transaction. The transaction has also cleared premerger review in the United States, Czech Republic and Korea.

The closing of the transaction remains subject to other conditions-including approval by Elpida creditors, the Tokyo District Court and regulatory approvals in other countries-and is expected to be completed in the first half of calendar 2013. Elpida's proposed reorganization plan was submitted to the Tokyo District Court on Aug. 21, 2012, and the Tokyo District Court's approved the submission of Elpida's proposed reorganization plan to creditors on October 31, 2012.

Micron Technology, Inc., (NASDAQ: MU) today announced results of operations for its first quarter of fiscal 2013, which ended November 29, 2012. For the first quarter, the company had a net loss attributable to Micron shareholders of $275 million, or $0.27 per diluted share, on net sales of $1.8 billion. The results for the first quarter of fiscal 2013 compare to a net loss of $243 million, or $0.24 per diluted share, on net sales of $2.0 billion for the fourth quarter of fiscal 2012, and a net loss of $187 million, or $0.19 per diluted share, on net sales of $2.1 billion for the first quarter of fiscal 2012.

Revenues from sales of NAND Flash products were 4 percent lower in the first quarter of fiscal 2013 compared to the fourth quarter of fiscal 2012, due to a 9 percent decrease in sales volume, partially offset by a 5 percent increase in average selling prices. Trade NAND Flash sales volume in the first quarter of fiscal 2013 decreased compared to the fourth quarter of fiscal 2012 primarily as a result of lower production of NAND Flash products. Revenues from sales of DRAM products in the first quarter of fiscal 2013 were 9 percent lower compared to the fourth quarter of fiscal 2012 primarily due to an 11 percent decrease in average selling prices. Sales of NOR Flash products were relatively unchanged for the first quarter of fiscal 2013 compared to the fourth quarter of fiscal 2012.

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced the addition of a new product to its Phase Change Memory (PCM) portfolio. With high-volume shipments of its 45-nanometer (nm), 1-gigabit (Gb) PCM-based multichip package (MCP) solution for mobile devices well underway, the company is now sampling a 512-megabit (Mb) PCM plus 512Mb LPDDR2 MCP that offers greater flexibility in terms of application requirements. The company also announced that it has been shipping 1Gb PCM to one of the world's leading mobile device manufacturers, Nokia, for use in their recently announced phones.

As the first company in the world to ship PCM solutions in volume, Micron is building on its close cooperation with chipset vendors, enablers and handset manufacturers to meet growing market demand for PCM. Nokia is using Micron's PCM solution to enrich the functionality of select devices in its portfolio.

According to DRAMeXchange, a division of global research firm TrendForce, as forecast in a previous report, DRAM contract price showed signs of stabilization in November; the previous US$1 to $2 monthly decline is narrowing, and DDR3 4 GB contract price is holding at the US$15 mark. TrendForce expects the contract price trend will only show a slight decrease in December, and may even stay flat for the month.

As spot market prices fluctuate more than contract prices, the spot market is often a good indicator of future DRAM prices. This week the spot market is seeing increased activity; DDR2 and 2 Gb eTT and DDR2 prices have increased by 1.24% and 1.09%, respectively. Top-tier memory makers began quietly building inventory in October, and spot market buyers seem to be following suit, providing an opportunity for a price rebound. TrendForce believes the DRAM spot price uptrend is due prior capacity cuts taking effect as well as strong entry-level tablet, or "Mobile Internet Device", shipments in China.

Micron's channel brand Crucial Memory is on the verge of launching half-height DDR3 memory modules for the enthusiast PC market, under the Ballistix Sport VLP series. Pictured below, next to standard Ballistix Sport modules, the VLP ("very low profile") series consists of memory modules that are nearly half the height of standard 240 pin UDIMMs, making them ideal for crammed up mini-ITX builds. The series will be available in most common configurations, the one pictured below runs at DDR3-1600 MHz with timings of 9-9-9-24, and 1.35V DRAM voltage. The modules will be available in 4 GB and 8 GB densities, and will make up single-, dual-, and quad-channel kits.

According to DRAMeXchange, a research division of TrendForce, as PC shipments are continually adjusted downwards and yearly growth has decreased by 5% YoY, demand for the peak season is not as strong as expected and the oversupply situation continues to worsen. As a result, contract price for 2 Gb chips fell by 22.5% in the third quarter, from US$1.11 in July to US$0.86 in September. Server and mobile DRAM are also showing falling price trends, resulting in an 8.5% drop in the value of the DRAM industry compared to the previous quarter; DRAM suppliers' revenues are falling across the board. However, looking at third quarter demand, with strong shipments for mobile devices like smartphones and tablet PCs, mobile DRAM accounted for 25% of total DRAM output, a significant increase from less than 20% in the second quarter. Consequently, market share is on the rise for memory makers with higher mobile DRAM ratios, like Samsung and Elpida. For the DRAM industry, improving core competitiveness lies in proper product adjustment, the key to profitability with such bleak market conditions.

Market research firm TrendForce released NAND flash shipment figures for 3Q 2012. The global NAND flash market is valued at US $4.626 billion, a healthy 6.6% growth over the previous quarter. A TrendForce DRAMeXchange report provided a break-down of shipments of NAND flash by manufacturers. Leading the pack is Samsung, with 41.2% market-share, registering a 1.8% QoQ growth. Trailing behind is Toshiba, with 24.7% market share, and a significant 12.9% QoQ growth. In September, Toshiba cut prices and scaled up production, which may have contributed to the growth. Micron holds 14.4% of the market with 2.8% growth, SK Hynix 11.6% with 6.4% growth (the company began mass-production of SSD-grade NAND flash this quarter), and Intel with 7.6% of the market-share, growing at 19.7%. Bear in mind, these numbers represent NAND flash components used not only in SSDs, but also USB flash drives, memory cards, etc.

According to DRAMeXchange, a research division of TrendForce, given the persistent oversupply situation in the global DRAM market, along with the -5% YoY shipment growth for PCs, October contract prices have dropped below $16 USD, and are continuing to approach the $15 USD mark. The trends pose as yet another test to the cost structures of DRAM makers. With prices approaching or dropping below cash cost, manufacturers are faced with the option of either undergoing production cuts or shifting their focus towards non-DRAM products.

Other than ProMOS, which chose to quit the DRAM market due to financial woes, manufacturers like Elpida and Rexchip have taken the initiative to lower their output levels in August. Powerchip, beginning September, took a similar initiative by adjusting P3 wafer levels, whereas in the following month, Nanya and Inotera made the official announcement to implement 20% production cuts. For the South Korean DRAM manufacturers, whose cost structures appear to be superior to those of other competitors, no production cuts have been announced nor taken, although efforts to control output ratios have been intensified. At the same time that production of commodity DRAM is being lowered, an increasing amount of emphasis is being placed on the production of the more profitable mobile and server DRAMs.