The random access memory market is a fiercely competitive one. Also, the yearly high PC shipment volume cycles of yesteryear are now history, pushing the various memory manufacturers into the red - and staying there. Well, it seems like Elpida is feeling the pinch more than most, because much of their debt has come from the Japanese government's recapitalization program and must be repaid by the end of April 2012. It looks like they can't pay this off so easily and due to this pressing deadline are looking for cash wherever they can get it, so it looks like merging with one of their rivals such as Toshiba or Micron might help them out of this predicament. Ultimately though, everyone in the DRAM market is hurting now, so it looks like fewer players are needed, so that they can work more like an oligopoly to return to profitability.

While great for helping them to survive, this isn't such good news for the end customer, who will end up seeing higher prices for their memory and a much slower decline in prices, if any. There's lots of detailed analysis and facts and figures over at X-bit labs.

Investment firm Barclays Capital lowered its ratings on semiconductor majors Intel, Applied Materials Inc, Freescale Semiconductor Holdings Ltd, Microchip Technology Inc., and Spansion Inc., from "equal weight" from "overweight", meaning that these companies are no longer outperforming, and are doing average, with negligible growth. Towards the end of 2011, Intel adjusted its Q4 forecast, lowering it by $1 billion, blaming factors beyond its control such as HDD supply problems. Weakened PC sales growth is another major factor. On the other hand, DRAM and NAND flash memory maker Micron Technology got its rating upgraded to "overweight", as Barclays notes that the industries Micron is in, are on the verge of a boom. Reacting to this, Micron's shares shot up by 11 percent during trading early this week, sending its shares' valuation from $6.2 billion, up 9 percent to $6.88 billion.

Micron Technology, Inc., today announced results of operations for its first quarter of fiscal 2012, which ended December 1, 2011. For the first quarter, the company had a net loss attributable to Micron shareholders of $187 million, or $0.19 per diluted share, on net sales of $2.1 billion. The results for the first quarter of fiscal 2012 compare to a net loss of $135 million, or $0.14 per diluted share, on net sales of $2.1 billion for the fourth quarter of fiscal 2011, and net income of $155 million, or $0.15 per diluted share, on net sales of $2.3 billion for the first quarter of fiscal 2011.

The company's consolidated gross margin remained at 15 percent for the first quarter of fiscal 2012. Improvements in NAND Flash margins were offset by declines in DRAM. Revenue from sales of NAND Flash products was 6 percent higher in the first quarter of fiscal 2012 compared to the fourth quarter of fiscal 2011 due to an 18 percent increase in sales volume partially offset by a 10 percent decrease in average selling prices. Revenue from sales of DRAM products was essentially unchanged in the first quarter of fiscal 2012 compared to the previous quarter, as a 14 percent increase sales volume was offset by a 12 percent decrease in average selling prices. Sales of NOR Flash products were approximately 14 percent of total net sales for the first quarter of fiscal 2012.

Micron Technology, one of the biggest DRAM companies, has announced that it's working the JEDEC standards organization for computer memory, to standardize a new DRAM interface and die-stacking technology called three-dimensional stacking, or 3DS, which may be incorporated into the upcoming DDR4 standard. X-bit labs has a nice summary of how 3DS works:

The idea behind 3DS is to use specially designed and manufactured master-and-slave DRAM die, with only the master die interfacing with the external memory controller. 3DS technology uses optimized DRAM die, single DLL per stack, reduced active logic, single shared external I/O, improved timing, and reduced load to the external world. This combination of features can improve timing, bus speeds, and signal integrity while lowering both power consumption and system overhead for next-generation modules, according to Micron.

Flash buddies Intel and Micron have today announced a significant breakthrough in terms of NAND density, the first 128 Gb (16 GB) MLC NAND memory chip. Manufactured on 20 nm process technology, this 128 Gb chip complies with the ONFI 3.0 specification (enabling speeds of up to 333 megatransfers per second) and can be used for new, high-capacity solid state drives, as well as for next-generation tablets, smartphones and other portable devices.

According to Intel and Micron, this milestone was made possible by the use of a new, innovative cell structure that 'breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.'

IBM (NYSE: IBM) and Micron Technology, Inc. announced today that Micron will begin production of a new memory device built using the first commercial CMOS manufacturing technology to employ through-silicon vias (TSVs). IBM's advanced TSV chip-making process enables Micron's Hybrid Memory Cube (HMC) to achieve speeds 15 times faster than today's technology.

Micron's Hybrid Memory Cube features a stack of individual chips connected by vertical pipelines or "vias," shown above. IBM's new 3-D manufacturing technology, used to connect the 3D micro structure, will be the foundation for commercial production of the new memory cube.

IBM will present the details of its TSV manufacturing breakthrough at the IEEE International Electron Devices Meeting on December 5 in Washington, DC.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced its participation in the 2012 International Consumer Electronics Show (CES) in Las Vegas, Nevada, on January 12. CES, produced by the Consumer Electronics Association, is the preeminent showcase for the worldwide consumer electronics industry. JEDEC's partner program, Memory Matters: Memory Solutions for Consumer Products and Mobile Devices, will explore how technological advancements and new standards can enhance device performance, reduce power usage and enable compact form factors.

Ever-increasing expectations for device speed and performance, as well as the trend towards smaller form factors, are driving the need for versatile memory solutions. Speakers from Agilent, CST, Micron and Samsung will highlight leading-edge memory solutions for next-generation mobile applications, a new generation of low-power memories for smartphones and tablets, and much more.

Rambus is the company best known for suing dozens of companies over memory patents that it holds and is suing so prolifically, that many just see this company as a patent troll. It has been accused many times of obtaining submarine patents while a member of the JEDEC group until a decade ago, which it is now fraudulently using to try and extort royalties from every other company using DDR memory and its derivatives. Unfortunately, those lawsuits didn't stick, encouraging Rambus to carry on enthusiastically. Rambus won patent fights against NVIDIA and Samsung for example, who now have to pay them ongoing royalties. However, it looks like Rambus may have bitten off more than it could chew, because it has just lost a $4 billion antitrust lawsuit against Micron Technology Inc and Hynix Semiconductor Inc, erasing more than half of the chipmaker's value as investors abandoned its stock in droves. Rambus stock immediately plunged more than 60% on this good news.

Micron Technology, Inc., today announced a new portfolio of load reduced dual-inline memory modules (LRDIMMs) featuring a 64GB offering. In addition to the standard densities of 8GB, 16GB and 32GB, which are sampling in high volume to several customers, Micron is introducing a 64GB LRDIMM to meet the ever-growing density requirements of servers.

Micron continues its memory market leadership with modules that provide 50 percent higher memory capacity and a performance increase of 33 percent for server applications. Resulting improvements to system scalability can significantly enhance cloud computing, high-performance computing, Web servers, transactional databases, and data analytics while reducing power needs by nearly 10 percent per DIMM slot compared to standard modules.

Micron Technology, Inc., introduced a new version of its popular RealSSD C400, featuring self encryption for unmatched data security. The C400 SED (Self-Encrypting Drive) is based on the Trusted Computing Group (TCG) Opal specifications and provides a hardware-based answer for the increasing wave of data breaches that continue to impact computer users and enterprises worldwide.

Security breaches caused by malicious attacks are on the rise, according to the recent Verizon Data Breach Investigations Report. While it's notable that the increase in small-scale external attacks doesn't rely on highly sophisticated approaches, encryption is widely credited as the first choice for the most affordable security solution for deterring such intrusions.

Micron Technology, Inc., today introduced the highest-density Serial Peripheral Interface (SPI) NOR memory available, launching 1 gigabit (Gb), 512 megabit (Mb) and 256Mb products in both 1.8V and 3V power supply voltages. Employing state-of-the-art 65nm process technology, the N25Q product family offers the highest-speed quad I/O in the industry and a full set of advanced features and small packages that improve overall system performance and time-to-market in networking, set-top boxes, automotive and a wide range of industrial, computing and consumer applications.

Extending the company's legacy of memory leadership, Micron's new SPI NOR product line balances customers' needs for cost-effective solutions at higher densities while ensuring compatibility among future chipsets. Micron's long-term commitment to customers in the embedded markets is reinforced by Micron's Product Longevity Program (PLP) - a 10-year commitment to provide stable memory architectures for customer designs. The new N25Q products will be offered as part of this program to provide design assurance for its PLP customers.

Intel's Smart Response technology is doing wonders to the low-cost SSD market. The technology lets low-capacity, usually low-cost SSDs to be used as caches for hard drives, improving the system's overall responsiveness. The technology makes these low-cost SSDs more of a component than a product (such as 2.5-inch SATA SSDs), and hence it makes sense to offer them in the mSATA form-factor. Intel made its headstart by launching the Intel 311 "Larson Creek" series 20 GB SSD that comes in both 2.5-inch SATA 3 Gb/s and mSATA form factors. While mSATA makes it easy to deploy the technology into notebooks, desktop motherboard vendors such as Gigabyte thought it would be nice to give their motherboards an mSATA slot.

Capitalizing on this very market is A-Data, with a couple of new low-cost mSATA SSDs in the ISFM series. First is the ISFM-XM13, an mSATA SSD driven by a SandForce SF-1200 series controller. Even with some of the controller's channels unoccupied (due to obvious lack of space to put NAND flash chips), this card doles out decent transfer rates of up to 250 MB/s read and 170 MB/s write. This card comes in capacities of 30 GB (32 GB with 2 GB overprovisioned) and 60 GB (64 GB with 4 GB overprovisioned). This card uses MLC NAND flash. Next up, is the ISFM-IXM01, that looks to be using a JMicron-made controller. The bigger difference here is the use of SLC NAND flash on one of its two variants, which traditionally offers higher rewrite cycles. The other variant uses MLC NAND flash. The SLC variant offers transfer rates of 90 MB/s read and 90 MB/s write, and comes in capacities of 2, 4, 8, and 16 GB. The MLC variant gives you 150 MB/s read, 120 MB/s write; and comes in capacities of 32, 64, and 128 GB.

Lexar Media, a leading global provider of memory products for digital media, today announced the immediate availability of Crucial m4 solid-state drives in capacities ranging from 64GB to 512GB. Designed for both business customers and general consumers, the Crucial m4 SSD product line incorporates Micron's industry-leading 25-nanometer (nm) NAND flash technology in a 2.5" form factor. Like its Crucial RealSSD C300 predecessor, the Crucial m4 also supports the SATA 6Gb/s interface, opening up the data path between the host processor and the SSD, and resulting in improved overall system responsiveness, including faster boot times and application loads.

The new Crucial m4 SSD reaches read speeds of up to 415 MB/second, a 17 percent increase over its predecessor. Likewise, write speeds on the new 512GB capacity have demonstrated increases up to 260MB/s, a 20 percent boost over the fastest C300 drive1. Ideal for client computing, Crucial m4 SSD products provide benefits for notebooks, desktops, workstations, and industrial applications, including low power consumption, lightweight construction, and resistance to shock and vibration.

Intel Corporation (Nasdaq:INTC) and Micron Technology, Inc. today expanded their NAND Flash memory joint venture operations with the official opening of IM Flash Singapore. The US$3 billion facility is expected to employ about 1,200 and is currently ramping production of the companies' industry-leading 25 nanometer (nm) NAND Flash memory. The companies announced the opening of the state-of-the-art 300 millimeter facility at a ceremony with Singapore government representatives, including Prime Minister Lee Hsien Loong.

"In just five short years, Intel and Micron have successfully collaborated to become the industry's NAND Flash leader," said Steve Appleton, Micron Chairman and CEO. "The opening of IM Flash Singapore marks another significant milestone in our partnership and complements Micron's Singapore operations that serve as our company's Asian hub."

Intel Corporation and Micron Technology Inc. today introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving music, video, books and other data on smartphones, tablets and computing solutions such as solid-state drives (SSDs).

The growth in data storage combined with feature enhancements for tablets and smartphones is creating new demands for NAND flash technology, especially greater capacity in smaller designs. The new 20nm 8GB device measures just 118mm² and enables a 30 to 40 percent reduction in board space (depending on package type) compared to the companies' existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.

The Open NAND Flash Interface (ONFI) Working Group, the organization dedicated to simplifying integration of NAND Flash memory into consumer electronic devices, computing platforms, and industrial systems, today published the new ONFI 3.0 standard. By using the non-volatile DDR2 (NV-DDR2) interface, the newly ratified standard reaches speeds of up to 400 megabytes (MB)/sec, doubling the current NAND interface transfer rates.

The ONFI 3.0 standard details the interface and infrastructure that ONFI's more than 100 members can employ to develop products that deliver the industry's fastest NAND interface. Improvements in ONFI 3.0's NAND interface speeds will also enable future NAND controllers to achieve similar performance with half the number of channels, providing both a cost and space savings, which are key requirements for solid-state drive (SSD) design. The ONFI 3.0 incorporates a sophisticated die selection feature that reduces the number of chip enable (CE) pins, which in turn lowers the number of controller pins making PCB routing more efficient. Reducing the number of CE pins is especially important for SSDs, providing a significant cost reduction and allowing the extra pins to be assigned to other applications within the system.

Micron Technology, Inc. today unveiled a new portfolio of the industry's most advanced RealSSD solid-state drives (SSDs) for the fast growing flash-based notebook market. A new breed of notebooks are entering the market that have lightweight construction, snappier system responsiveness and a longer lasting battery-all made possible because of the innovations in flash-based storage products.

"SSDs are bringing excitement back into personal computing," said Dean Klein, vice president of memory system development at Micron. "Micron is accelerating this enthusiasm with our new RealSSD portfolio, providing even greater performance and higher capacities than our previous generation SSDs."

Micron Technology, Inc., (Nasdaq:MU) today announced results of operations for its first quarter of fiscal 2011, which ended December 2, 2010. For the first quarter, the company had net income attributable to Micron shareholders of $155 million, or $0.15 per diluted share, on net sales of $2.3 billion. The results for the first quarter of fiscal 2011 compare to net income of $342 million, or $0.32 per diluted share, on net sales of $2.5 billion for the fourth quarter of fiscal 2010, and net income of $204 million, or $0.23 per diluted share, on net sales of $1.7 billion for the first quarter of fiscal 2010.

In the company's Memory segment (which excludes Numonyx and other non-reportable segments), revenue from sales of DRAM products was 19 percent lower in the first quarter of fiscal 2011 compared to the fourth quarter of fiscal 2010 due to a 23 percent decrease in average selling prices partially offset by a 5 percent increase in unit sales volume. Revenue from sales of NAND Flash products was up slightly in the first quarter of fiscal 2011 compared to the fourth quarter of fiscal 2010 due to a 20 percent increase in unit sales volume partially offset by a 15 percent decrease in average selling prices. The company's gross margin for its Memory segment was 26 percent in the first quarter of fiscal 2011 compared to 37 percent in the fourth quarter of fiscal 2010, primarily due to the decreases in average selling prices, partially offset by decreases in manufacturing costs.

Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the new Micron ClearNAND devices alleviate the challenges traditionally found in NAND process shrinks. Micron's ClearNAND portfolio extends the opportunities for more advanced NAND process generations to be used in enterprise servers, tablet PCs, portable media players, and dozens of other consumer applications.

"The pace of NAND scaling is largely responsible for the incredible growth and success the industry has seen to date, and for helping to create new flash-based storage solutions," said Glen Hawk, vice president of Micron's NAND Solutions Group. "While the advantages in NAND scaling are evident, so are the challenges with the technology becoming increasingly more difficult to manage. Micron's ClearNAND products remove this management burden for our customers and extend the life of this all-important technology."

Lexar Media, a leading global provider of memory products for digital media, today introduced a 1.8" footprint version of the award-winning Crucial RealSSD C300 product line. The 1.8" profile, which is approximately 40% smaller than the standard 2.5" drive, provides an excellent solid-state storage option for the most portable products such as ultra-thin laptops, netbooks, and tablet PCs - without sacrificing performance and capacity. Based upon the Micron RealSSD product design and innovation, the new Crucial RealSSD C300 1.8" drive utilizes (multi-level cell) MLC NAND, advanced controller technology, and optimized NAND management, which together improve boot up and application load times dramatically and enhance overall system performance. No moving parts provides for quieter, cooler, and more durable solutions compared to traditional hard disk drives.

Intel Corporation and Micron Technology Inc. today announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device. The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

Intel is planning a series of four solid state drives (SSDs) in Q4 2010, that makes use of the latest IMFlash Technologies 25 nm NAND flash memory chips, under a possible "G3" (third generation) brand identifier, and sold complete under the Intel X25-M, and X18-M (mainstream) and X25-V (value) brands. The four drives will continue to carry the company internal codename "Postville", and mostly the same exact feature set as the 34 nm Postville SSDs, except for the new 25 nm NAND chips, native data encryption, SMART, and higher performance.

Under the 2.5" form-factor X25-M series, there are 600 GB, 300 GB, and 160 GB models on the roadmap, while an X25-V 2.5" value SSD featuring the 25 nm flash chips includes an 80 GB model in Q4. Later in Q1 2011, Intel will add new enterprise X25-E "Lydonville" models based on the new chips, as well as introduce 25 nm based 300 GB and 160 GB 1.8" mainstream X18-M SSDs, and a 40 GB X25-M model. The introduction of these new SSDs follows the February 2010 announcement of the 25 nm NAND flash memory chips by IMFlash Technologies. IMFlash is a joint venture between Intel and Micron Technology.

Micron Technology, Inc., today introduced the RealSSD P300 solid-state drive (SSD), bringing faster system performance and improved data integrity to enterprise environments. The RealSSD P300 drive features the SATA 6-gigabits per second (Gbps) interface, a first for the enterprise SSD market. The new P300 SSD delivers extraordinarily high steady-state input/output operations per second (IOPS), up to 44,000 reads and 16,000 writes--more than 15 times the write performance of competing SATA-based SSDs.

"The RealSSD P300 SSD is the fastest SATA-based drive on the market," said Dean Klein, Micron vice president of Memory System Development. "The RealSSD P300 is able to do the work of multiple hard drives--outperforming a RAID of 12 hard drives in some cases."

Micron Technology, Inc., today announced a new 2-gigabit (Gb) 50-nanometer (nm) DDR2 memory device to support the upcoming Intel Atom platform for tablet and netbook personal computers, codenamed "Oak Trail." The small form factor, high-density and low-power consumption of the 2Gb 50nm DDR2 makes it an ideal memory solution for the tablet PC market where size and battery life are key features.

The transition of Micron's 2Gb DDR2 product to the more advanced 50nm process node demonstrates the company's continued commitment and ongoing investment in technologies that meet market demand. In addition to the increase in density from 1Gb to 2Gb-based components, the move to the 50nm process inherently provides improved power savings and a smaller memory footprint.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced the publication of JEDEC DDR3L, a widely anticipated addendum to its JESD79-3 DDR3 Memory Device Standard. Continuing the evolution of DDR3 as the dominant DRAM standard today, DDR3L will enable a significant reduction in power consumption for a broad range of products that utilize memory; including laptops, desktops, servers, networking systems and a wide array of consumer electronics products. The updated version of JESD79-3, including the DDR3L addendum, is available for free download here.

Called DDR3L for DDR3 Low Voltage, devices adhering to the new standard will operate from a single 1.35V power supply voltage compared to 1.5V in existing devices. Under the new standard, DDR3L memory devices will be functionally compatible to DDR3 memory devices, but not all devices will be interoperable at both voltage ranges.