TrendForce's latest research report highlights that the NAND Flash industry will continue to face dual pressure from weak demand and oversupply in 2025. In response, manufacturers including Micron, Kioxia/SanDisk, Samsung, and SK hynix/Solidigm have similar plans to cut production—a move that could accelerate industry consolidation in the long term.

TrendForce reports that NAND Flash manufacturers are primarily implementing production cuts by lowering utilization rates and delaying process upgrades. These actions are driven by three major factors:

Kioxia had a small dugout at the 2025 International CES. The NAND flash major tends to have a much bigger booth at FMS than CES. The one in Vegas had its latest enterprise SSDs, all of which were launched through 2024, and a couple of new things. We first got a practical demo of how Kioxia achieves 218 layers of NAND flash in its latest generation of BiCS Flash using an architectural innovation called CBA—CMOS directly bonded to array. In CBA, the cell array acts like a pizza topping to the crust that is the CMOS layer, rather than being arranged side-by-side. This allows for greater density of flash cells. This also has certain performance and power advantages.

Next up, the company showed us their automotive-grade UFS 4.0 non-volatile storage device, which uses the latest 218-layer 3D NAND flash memory. This device was announced toward the end of 2024, and gathered a salad of certifications that make it fit for the latest generation of automobiles with advanced technology such as FSD, or an infotainment system that's practically as powerful as a PC. We also got a fascinating look at the testbed Kioxia uses to validate its automotive UFS 4.0 devices.

Micron Technology, Inc. (Nasdaq: MU) broke ground today on a new High-Bandwidth Memory (HBM) advanced packaging facility adjacent to the company's current facilities in Singapore. Micron marked the occasion with a ceremony attended by Gan Kim Yong, Deputy Prime Minister and Minister for Trade and Industry of Singapore, Png Cheong Boon, Chairman of the Singapore Economic Development Board, Pee Beng Kong, Executive Vice President of the Singapore Economic Development Board, and Tan Boon Khai, CEO of JTC Corporation.

The new HBM advanced packaging facility will be the first facility of its kind in Singapore. Operations for the new facility are scheduled to begin in 2026, with meaningful expansion of Micron's total advanced packaging capacity beginning in calendar 2027 to meet the demands of AI growth. The launch of this facility will further strengthen Singapore's local semiconductor ecosystem and innovation.

This week at CES 2025, KIOXIA America, Inc. will highlight the transformative potential of flash memory. As pioneers of NAND flash technology, KIOXIA will demonstrate how its innovative solutions empower users to achieve more, tackle challenges, and unlock creativity—making everyday moments and groundbreaking innovations possible.

Visitors to the KIOXIA exhibit will discover how flash memory is redefining storage for a digital-first world. The company will showcase cutting-edge solutions for diverse industries, from memory and SSDs for artificial intelligence and automotive to flash products for consumer and industrial applications.

SK hynix has returned to Las Vegas for Consumer Electronics Show (CES) 2025, showcasing its latest AI memory innovations reshaping the industry. Held from January 7-10, CES 2025 brings together the brightest minds and groundbreaking technologies from the world's leading tech companies. This year, the event's theme is "Dive In," inviting attendees to immerse themselves in the next wave of technological advancement. SK hynix is emphasizing how it is driving this wave through a display of leading AI memory technologies at the SK Group exhibit. Along with SK Telecom, SKC, and SK Enmove, the company is highlighting how the Group's AI infrastructure brings about true change under the theme "Innovative AI, Sustainable Tomorrow."

Groundbreaking Memory Tech Driving Change in the AI Era
Visitors enter SK Group's exhibit through the Innovation Gate, greeted by a video of dynamic wave-inspired visuals which symbolize the power of AI. The video shows the transformation of binary data into a wave which flows through the exhibition, highlighting how data and AI drives change across industries. Continuing deeper into the exhibit, attendees make their way into the AI Data Center area, the focal point of SK hynix's display. This area features the company's transformative memory products driving progress in the AI era. Among the cutting-edge AI memory technologies on display are SK hynix's HBM, server DRAM, eSSD, CXL, and PIM products.

The world's leading memory module and flash memory brand, ADATA Technology, will be participating in CES 2025 with its gaming brand XPG and industrial-grade embedded storage brand ADATA Industrial. ADATA will be bringing its theme of "Innovate for a Better Tomorrow" to the Venetian in Las Vegas, located at booth Titian #2204 from January 7th to 10th. An online exhibition will be launched during this period for consumers around the world to experience a full range of innovative products in real time.

This year, ADATA will present three exhibition zones, each with an overarching theme. The "Artificial Intelligence Computing Solutions Zone" will showcase XPG AICORE DDR5 R-DIMM overclocked memory and XPG LANCER CUDIMM RGB DDR5 gaming memory. Additional products in this zone include the XPG DEFENDER SFF small form factor commercial chassis and XPG EDGECORE TFX power supply, which are designed to meet the needs of edge computing systems and demonstrate ADATA's comprehensive investment in the evolution of the AI era. The "Innovative Technology and Smart Mobile Lifestyle Zone" will see the launch of multiple Gen 5 SSD cooling solutions and highlight the world's first eco-friendly XPG LANCER NEON RGB DDR5 gaming memory with PCB heat dissipating coating, creating a new benchmark for cooling and efficient data transfer in the high-speed storage industry. The "Xtreme Performance Gear Zone" will showcase highly efficient gaming systems, top-notch power supplies, and cooling solutions, taking gaming applications to a new level. Each exhibit combines innovative technologies and high-performance products, and consumers around the world can join online for a one of a kind experience!

A South Korean online retailer has listed Huawei's eKitStore Extreme 200E M.2 NVMe SSD for sale at 47,500 Won ($32) for the 1 TB model. This marks Huawei's entry into consumer storage products after previously only manufacturing server SSDs. The PCIe 4.0 drive's specifications show read speeds of 7,400 MB/s and write speeds of 6,700 MB/s. Beyond confirming the use of QLC memory without a DRAM cache, Huawei has not disclosed the drive's internal components. Due to trade restrictions, both the controller and memory chips likely come from Chinese manufacturers, though specific suppliers remain unknown. Chinese makers have been recorded to use Silicon Motion's SSD controllers, but domestic controllers are also an option here.

Manufacturing costs for similar drives typically exceed $32, raising questions about the pricing strategy. The drive's components could match those used in other brands' SSDs, as multiple storage companies often use identical parts in their products. For NAND Flash, Huawei likely sourced its chips from YMTC, whose Xtacking 4.0 proves to be quite a success. The drive has appeared only at one retailer so far, and Huawei has not announced plans for sales in other regions. This price is notably lower than comparable PCIe 4.0 drives. Common retail prices for 1 TB PCIe 4.0 SSDs are typically more than double this amount. Whether this represents a temporary price or a long-term strategy remains unclear. Perhaps Huawei is operating at a net loss to gain some customers, with possible plans for more SSDs in the future, along with the PCIe 5.0 version.

An SSD from Chinese manufacturer Zhitai has demonstrated impressive performance metrics, reaching sequential read speeds of up to 14.5 GB/s. Under the hood, the TiPro9000 2 TB SSD combines domestic YMTC 5th Generation 3D TLC NAND technology with Silicon Motion's SM2508 controller. The drive's architecture features a 2 GB LPDDR4X DRAM chip and two 3D TLC NAND dies utilizing 232-layer YMTC's Xtacking 4.0 architecture. While initial testing revealed peak sequential read and write speeds of 14,527 MB/s and 13,869 MB/s respectively, these rates are sustained through the SLC cache for approximately 24 seconds. Performance testing showed distinct operational phases. After the initial burst speed period, transfer rates stabilize at around 4,000 MB/s for 325 seconds before dropping to 1,700-1,800 MB/s. The drive then demonstrates recovery capabilities, returning to 4,000 MB/s after 259 seconds.

Random performance specifications are equally impressive, with the manufacturer claiming up to 2 million IOPS for reads and 1.6 million IOPS for writes. The TiPro9000's performance metrics position it competitively among top-tier PCIe 5.0 x4 drives. This shows the capabilities of Chinese-manufactured YMTC NAND memory technology paired with Silicon Motion's controller expertise, putting a lot of faith in China-made NAND Flash. With growing needs for AI and big data applications, performant storage systems are becoming key to many systems. However, Chinese companies still need a solid (pun intended) controller to compete with Western technology to complete storage manufacturing. Alibaba is working on a RISC-V-based controller, while InnoGrit has also been sampling controllers. We have yet to see commercial applications based on these two.

SK hynix Inc. announced today that it has completed development of its high-capacity SSD product, PS1012 U.2, designed for AI data centers. As the era of AI accelerates, the demand for high-performance enterprise SSDs (eSSD) is rapidly increasing, and QLC technology, which enables high capacity, has become the industry standard. In line with this trend, SK hynix has developed a 61 TB product using this technology and introduced it to the market.

SK hynix has been leading the SSD market for AI data centers with Solidigm, a subsidiary which commercialized QLC-based eSSD for the first time in the world. With the development of PS1012, the company expects to build a balanced SSD portfolio, thereby maximizing synergy between the two companies. With the latest 5th generation (Gen 5) PCIe, PS1012 doubles its bandwidth compared to 4th generation based products. As a result, the data transfer speed reaches 32 GT/s (Gig-transfers per second), with the sequential read performance of 13 GB/s (Gigabyte per second), which is twice that of previous generation products.

Although it was revealed back in March this year, SK hynix new Platinum P51 PCIe 5.0 has only just now launched in South Korea and the specs have been boosted since March. The official sequential read speed is now rated at 14.7 GB/s vs. 13.5 GB/s in March and likewise, the sequential write speed has increased to 13.4 GB/s from 11.5 GB/s. We're also looking at a random IOPS read speed of up to 2,300k and random write IOPS of up to 2,400k. This compares really favourably compared to Phison E26 based SSDs, especially the random IOPS are very impressive.

However, it's not all good news, as the endurance tops out at 1200 TBW on the 2 TB SKU, which is pretty much what every other modern SSD offers today and somewhat disappointing considering that we're looking at SK hynix 238 layer 3D TLC NAND here. The 2 TB SKU is also the largest size available for now and the Platinum P51 will also come in 1 TB and 500 GB flavours. Another not so great, is the 10 W power consumption, even though SK hynix claims it's industry leading, but we know that this isn't true, as the Silicon Motion SM2508 controller is more power efficient than that. The drive has already been quickly benchmarked by South Korean hardware site Quasar Zone and it delivers in terms of the claimed speeds from the manufacturer, at least according to the CrystalDiskMark numbers. No pricing has tipped up as yet, so we'll have to wait to see how competitive the drive will be in an already crowded market. However, it's worth keeping in mind that SK hynix tends to charge a premium for its SSDs over many of its competitors.

Update Dec 14th: The 2 TB SKU has a retail price of 473,000 Korean Won, which equals about US$330, making it prohibitively expensive at the moment, even compared to most other PCIe 5.0 SSDs on the market. The 1 TB SKU comes in at 279,000 Korean Won, or about US$195. The Korean prices include 10% VAT/sales tax.

Global sales of total semiconductor manufacturing equipment by original equipment manufacturers (OEMs) are forecast to set a new industry record, reaching $113 billion in 2024, growing 6.5% year-on-year, SEMI announced today in its Year-End Total Semiconductor Equipment Forecast - OEM Perspective at SEMICON Japan 2024. Semiconductor manufacturing equipment growth is expected to continue in the following years, reaching new records of $121 billion in 2025 and $139 billion in 2026, supported by both the front-end and back-end segments.

"Three consecutive years of projected growth in investments in semiconductor manufacturing reflect the vital role our industry plays in underpinning the global economy and advancing technology innovation," said Ajit Manocha, SEMI president and CEO. "Since our July 2024 forecast, the outlook for 2024 semiconductor equipment sales has brightened, especially with stronger-than-expected investments from China and in AI-related sectors. Together with our forecast extension through 2026, it highlights the robust growth drivers across segments, applications, and regions."

Chinese semiconductor memory giant YMTC is reportedly manufacturing anywhere between 400-500,000 wafers per year of leading-edge NAND memory, all on domestically produced wafers. According to Mayuki Hashimoto, CEO and Chairman of SUMCO, a Japanese company supplying raw silicon ingots and polished wafers, they are seeing a significant business impact stemming from China's growing self-reliance, especially with companies like YMTC producing its own silicon ingots and polished wafers. This has led to SUMCO's decreasing revenue, where the CEO shared some insights about Chinese ambitions. He added that China is producing about one million wafers of silicon per year, most of which are test wafers. This includes test runs from companies like SMIC and its customers, such as T-Head, HiSilicon, and others.

Last year, YMTC, with its Xtacking 4.0 3D NAND flash architecture, was the first company to achieve a 200+ layer count in the 3D NAND space. The company's product, X4-9070, a 232-layer TLC 3D NAND, uses multiple silicon wafers, hence growing its massive consumption of silicon that is projected to reach 500,000 wafers per year. Given that this is all homegrown silicon from ingots to NAND, this is a massive success for Chinese self-reliance efforts but a huge blow to companies that used to supply Chinese firms with raw materials. Although the company uses custom silicon, it still relies on foreign tools, photoresists, and pre-cursors. There are some indications that YMTC is developing its own tools; it is a plan of a broader strategy in the Chinese semiconductor industry to develop every step of the semiconductor manufacturing process. Huawei is also there to develop EUV scanners, and YMTC could help with its memory business, which is in need of a new tool.

SK hynix Inc. announced today that it has started mass production of the world's first triple level cell-based 321-high 4D NAND Flash with 1 Tb capacity. Following its previous record as the industry's first provider of the world's highest 238-layer NAND since June last year, SK hynix has become the world's first supplier of the NAND with more than 300 layers by finding a technological breakthrough for stacking. The company plans to provide the 321-high products to customers from the first half of next year.

Stacking more than 300 layers came into reality as the company successfully adopted the "3 plugs" process technology. Known for its excellent production efficiency, the process electrically connects three plugs through an optimized follow-up process after three times of plug processes are finished. For the process, SK hynix developed a low-stress material, while introducing the technology that automatically corrects alignments among the plugs.

Samsung Electronics Co., Ltd. today announced that it held a tool-in ceremony for its new semiconductor research and development complex (NRD-K) at its Giheung campus, marking a significant leap into the future. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. As a state-of-the-art facility, NRD-K broke ground in 2022 and is set to become a key research base for Samsung's memory, system LSI and foundry semiconductor R&D. With its advanced infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion by 2030 for the complex in an area covering about 109,000 square meters (m²) within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025.

"NRD-K will bolster our development speed, enabling the company to create a virtuous cycle to accelerate fundamental research on next generation technology and mass production. We will lay the foundation for a new leap forward in Giheung, where Samsung Electronics' 50-year history of semiconductors began, and create a new future for the next 100 years," said Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division at Samsung Electronics.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD230G: NAND Flash Interface Interoperability Standard. JESD230G introduces speeds of up to 4800 MT/s, as compared to 400 MT/s in the first version of JESD230 published in 2011. Also, JESD230G adds a separate Command/Address Bus Protocol (SCA), delivering enhanced throughput and efficiency by allowing hosts and NAND devices to take maximum advantage of the latest interface speeds. JESD230G is available for free download from the JEDEC website.

"JEDEC is excited to release JESD230G," said David Landsman, Distinguished Engineer at Western Digital and Chair of the JEDEC NAND TG. He added, "This version of JESD230 further advances the capabilities of NAND flash devices to meet the growing demands of their expanding range of applications and continues the JEDEC tradition of building interoperable ecosystems through open industry standards."

Phison Electronics, a leading innovator in NAND Flash technologies, today announced the newest addition and highest available capacity of the Pascari D-Series data center-optimized SSDs to be showcased at SC24. The Pascari D205V drive is the first PCIe Gen 5 128 TB data center class SSD available for preorder to address shifting storage demands across use cases including AI, media and entertainment (M&E), research and beyond. In a single drive the Pascari D205V offers 122.88 TB of storage, creating a four-to-one capacity advantage over traditional cold storage hard drives while shrinking both physical footprint and OPEX costs.

While the exponential data-deluge continues to strain data center infrastructure, organizations face a tipping point to maximize investment while remaining conscious of footprint, cost efficiency and power consumption. The Pascari D205V read-intensive SSD combines Phison's industry-leading X2 controller and the latest 2 Tb 3D QLC technology engineered to enable unequaled 14,600 MB/s sequential read and 3,000K IOPS random read performance. By doubling both the read speeds against Gen 4 as well as the capacity against the 61.44 TB enterprise SSDs currently available on the market today, the Pascari D205V allows customers to upgrade to larger datasets per server, top-tier capacity-per-watt utilization and unparalleled read performance.

Solidigm, a leading provider of innovative NAND flash memory solutions, announced today the introduction of the world's highest capacity PCIe solid-state drive (SSD): the 122 TB (terabyte) Solidigm D5-P5336 data center SSD. The D5-P5336 doubles the storage space of Solidigm's earlier 61.44 TB version of the drive and is the world's first SSD with unlimited Random Write endurance for five years—offering an ideal solution for AI and data-intensive workloads. Just how much storage is 122.88 TB? Roughly enough for 4K-quality copies of every movie theatrically released in the 1990s, 2.6 times over.

Data storage power, thermal and space constraints are accelerating as AI adoption increases. Power and space-efficient, the new 122 TB D5-P5336 delivers industry-leading storage efficiency from the core data center to the edge. Data center operators can deploy with confidence the 122 TB D5-P5336 from Solidigm, the proven QLC (quad-level cell) density leader with more than 100EB (exabytes) of QLC-based product shipped since 2018.

Innodisk, a leading global AI solution provider, has introduced its new E1.S SSD, which is specifically designed to meet the demands of growing edge computing applications. The E1.S edge server SSD offers exceptional performance, reliability, and thermal management capabilities to address the critical needs of modern data-intensive environments and bridge the gap between traditional industrial SSDs and data center SSDs.

As AI and 5G technologies rapidly evolve, the demands on data processing and storage continue to grow. The E1.S SSD addresses the challenges of balancing heat dissipation and performance, which has become a major concern for today's SSDs. Traditional industrial and data center SSDs often struggle to meet the needs of edge applications. Innodisk's E1.S eliminates these bottlenecks with its Enterprise and Data Center Standard Form Factor (EDSFF) design and offers a superior alternative to U.2 and M.2 SSDs.

Micron Technology, Inc., today announced it has begun qualification of the 6550 ION NVMe SSD with customers. The Micron 6550 ION is the world's fastest 60 TB data center SSD and the industry's first E3.S and PCIe Gen 5 60 TB SSD. It follows the success of the award-winning 6500 ION and is engineered to provide best-in-class performance, energy efficiency, endurance, security, and rack density for exascale data center deployments. The 6550 ION excels in high-capacity NVMe workloads such as networked AI data lakes, ingest, data preparation and check pointing, file and object storage, public cloud storage, analytic databases, and content delivery.

"The Micron 6550 ION achieves a remarkable 12 GB/s while using just 20 watts of power, setting a new standard in data center performance and energy efficiency," said Alvaro Toledo, vice president and general manager of Micron's Data Center Storage Group. "Featuring a first-to-market 60 TB capacity in an E3.S form factor and up to 20% better energy efficiency than competitive drives, the Micron 6550 ION is a game-changer for high-capacity storage solutions to address the insatiable capacity and power demands of AI workloads."

Both pictures and videos of a partial teardown of Apple's recently launched Mac mini with the M4 SoC have appeared online courtesy of various Chinese sources. There are at least two interesting parts to these partial teardowns and they're related to storage and WiFi. On the storage front, Apple has moved away from having soldered NAND chips straight on the main PCB of the Mac mini, to instead having them on a custom PCB which is similar to M.2, but a custom Apple design. The PCB pictured contained a pair of 128 GB NAND chips and with the source of the teardown being from China, there's also a video showing a repair shop desoldering the two chips and replacing them with two 1 TB chips, or in other words, the SSD was upgraded from 256 GB to 2 TB.

The upgrade brought with it some extra performance as well, even if the write speed remained at a comparatively slow 2900 MB/s, the read speed went up from 2000 MB/s to 3300 MB/s which is a significant gain in performance. This is obviously not a consumer friendly upgrade path, but we'd expect to see third party upgrade options at some point in the future, assuming there's no black listing of third party storage modules. The NAND controller is still likely to be integrated into Apple's SoC, but the PCB that the NAND flash chips are mounted onto appears to have some kind of SPI flash on it as well, which might make third party upgrades a lot harder.

As AI accelerates data expansion, enterprises face increasing challenges in managing large volumes of data effectively. Tiered storage solutions have emerged as the preferred approach for balancing performance and costs. Solid State Drives (SSDs), with their fast read and write speeds, low latency and high power efficiency, are becoming the dominant storage selection for data centers and AI servers. Among SSD techniques, QLC SSDs offer unique advantages in costs and storage density, making them particularly suited for read-intensive AI applications. Therefore, high-capacity SSDs, such as 32 TB and 64 TB models, are gaining traction as a new storage solution in the market.

Read-Intensive Applications: Mainstream Enterprise SSD Use Cases
According to the latest research from FI (Forward Insight), up to 91% of current PCIe SSDs deployments are used in applications with DWPD of less than 1, and the share is expected to reach 99% by 2028. this shift underscores the increasing prevalence of read-intensive applications and data centers, a space where QLC SSDs excel.

ADATA has launched the Legend 860 M.2 NVMe Gen 4 SSD series, aimed at mid-range users seeking a fast and reliable storage solution for PCs, laptops, or PS5 devices. Utilizing the PCIe Gen 4 x4 interface, the Legend 860 delivers sequential read and write speeds of up to 6,000 MB/s and 5,000 MB/s, respectively—three times faster than standard PCIe Gen 3 SSDs and ten times faster than SATA SSDs.

The lineup consists of three models with capacities of 500 GB, 1 TB, and 2 TB, each equipped with a slim aluminium heatsink. The ADATA Legend 860 utilizes 3D NAND flash chips and incorporates an SLC cache algorithm, HMB (Host Memory Buffer) technology, and an LDPC (Low-Density Parity Check) error correction mechanism, providing up to 640 TB TBW (Terabytes Written). ADATA offers a 5-year limited warranty, though pricing has not yet been disclosed.

Samsung Electronics today reported financial results for the third quarter ended Sept. 30, 2024. The Company posted KRW 79.1 trillion in consolidated revenue, an increase of 7% from the previous quarter, on the back of the launch effects of new smartphone models and increased sales of high-end memory products. Operating profit declined to KRW 9.18 trillion, largely due to one-off costs, including the provision of incentives in the Device Solutions (DS) Division. The strength of the Korean won against the U.S. dollar resulted in a negative impact on company-wide operating profit of about KRW 0.5 trillion compared to the previous quarter.

In the fourth quarter, while memory demand for mobile and PC may encounter softness, growth in AI will keep demand at robust levels. Against this backdrop, the Company will concentrate on driving sales of High Bandwidth Memory (HBM) and high-density products. The Foundry Business aims to increase order volumes by enhancing advanced process technologies. Samsung Display Corporation (SDC) expects the demand of flagship products from major customers to continue, while maintaining a quite conservative outlook on its performance. The Device eXperience (DX) Division will continue to focus on premium products, but sales are expected to decline slightly compared to the previous quarter.

Samsung is currently mass-producing its 9th generation V-NAND flash memory chips with 286 layers unveiled this April. According to the Korean Economic Daily, the company targets V-NAND memory chips with at least 400 stacked layers by 2026. In 2013, Samsung became the first company to introduce V-NAND chips with vertically stacked memory cells to maximize capacity. However, stacking beyond 300 levels proved to be a real challenge with the memory chips getting frequently damaged. To address this problem, Samsung is reportedly developing an improved 10th-generation V-NAND that is going to use the Bonding Vertical (BV) NAND technology. The idea is to manufacture the storage and peripheral circuits on separate layers before bonding them vertically. This is a major shift from the current Co-Packaged (CoP) technology. Samsung stated that the new method will increase the density of bits per unit area by 1.6 times (60%), thus leading to increased data speeds.

Samsung's roadmap is truly ambitious, with plans to launch the 11th generation of NAND in 2027 with an estimated 50% improvement in I/O rates, followed by 1,000-layer NAND chips by 2030. Its competitor, SK hynix, is also working on 400-layer NAND aiming to have the technology ready for mass production by the end of 2025, as we previously mentioned in August. Samsung, the current HBM market leader with a 36.9% market share have also plans for its DRAM sector intending to introduce the sixth-generation 10 nm DRAM, or 1c DRAM by the first half of 2025. Then we can expect to see Samsung's seventh-generation 1d nm (still on 10 nm) in 2026, and by 2027 the company hopes to release its first generation sub-10 nm DRAM, or 0a DRAM memory that will use a Vertical Channel Transistor (VCT) 3D structure similar to what NAND flash utilizes.

SK hynix Inc. announced today that it recorded 17.5731 trillion won in revenues, 7.03 trillion won in operating profit (with an operating margin of 40%), and 5.7534 trillion won in net profit (with a net margin of 33%) in the third quarter this year. Quarterly revenues marked all-time high, exceeding the previous record of 16.4233 trillion won in the second quarter of this year by more than 1 trillion won. Operating profit and net profit also far exceeded the record of 6.4724 trillion won and 4.6922 trillion won in the third quarter of 2018 during the semiconductor super boom.

SK hynix emphasized that the demand for AI memory continued to be strong centered on data center customers, and the company marked its highest revenue since its foundation by expanding sales of premium products such as HBM and eSSD. In particular, HBM sales showed excellent growth, up more than 70% from the previous quarter and more than 330% from the same period last year.