Numemory has introduced the NM101, a 64 Gb storage-class memory module that uses technology similar to Intel's now-discontinued Optane architecture. The device implements phase-change memory and crossbar technology in a 3D selector-only memory structure, matching Optane's 3200 MT/s transfer rate specification. The technical architecture diverges from Intel's implementation by using a single selector in its cross-point structure rather than the dual-selector approach of 3D XPoint memory. Operating at 1.2 V with an X8 bus width, the NM101 uses 3D stacking to achieve claimed performance metrics of 10x faster read/write speeds than NAND flash. Xincun Technology, which established the Numemory division in Wuhan in 2022, holds 273 patents related to the technology, including 60 international and 213 Chinese patents. The company's R&D team of 144 engineers has developed the architecture since 2019, three years before Intel ended its Optane program.

Production plans specify an initial manufacturing target of 10,000 units monthly by the end of 2025. Guao Technology has committed ¥10 billion to establish production facilities in Zhejiang province, with additional funding from the Anji county government. The NM101's operating temperature range spans 0-70°C, suitable for standard data center environments. While the device's specifications suggest the potential for data center deployment, specific IOPS and latency metrics remain unpublished. Initial production will serve domestic Chinese servers and storage manufacturers. The technology's viability in mass production remains to be demonstrated, particularly given the manufacturing challenges that contributed to Optane's market exit. The Chinese internal market is massive, so serving only domestic companies could be enough for Numemory at the beginning. If the company continues development, worldwide expansion could pick up where Optane stopped.

Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8 Gb/s NAND interface speed, superior power efficiency, and heightened density

Unveiled at ISSCC 2025, the new 3D flash memory innovation, together with the companies' revolutionary CBA (CMOS directly Bonded to Array) technology, incorporates one of the latest interface standards, Toggle DDR6.0 for NAND flash memory, and leverages the SCA (Separate Command Address) protocol, a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which is instrumental in further reducing power consumption.

Micron Technology, Inc., today announced the Micron 4600 PCIe Gen 5 NVMe SSD, an innovative client storage drive for OEMs that is designed to deliver exceptional performance and user experience for gamers, creators and professionals. Leveraging Micron G9 TLC NAND, the 4600 SSD is Micron's first Gen 5 client SSD and doubles the performance of its predecessor.

The Micron 4600 SSD showcases sequential read speeds of 14.5 GB/s and write speeds of 12.0 GB/s. These capabilities allow users to load a large language model (LLM) from the SSD to DRAM in less than one second, enhancing the user experience with AI PCs. For AI model loading times, the 4600 SSD reduces load times by up to 62% compared to Gen 4 performance SSDs ensuring rapid deployment of LLMs and other AI workloads. Additionally, the 4600 SSD provides up to 107% improved energy efficiency (MB/s per watt) compared to Gen 4 performance SSDs, enhancing battery life and overall system efficiency.

TrendForce's latest findings reveal that the NAND Flash market continues to be plagued by oversupply in the first quarter of 2025, leading to sustained price declines and financial strain for suppliers. However, TrendForce anticipates a significant improvement in the market's supply-demand balance in the second half of the year.

Key factors contributing to this shift include proactive production cuts by manufacturers, inventory reductions in the smartphone sector, and growing demand driven by AI and DeepSeek applications. These elements are expected to alleviate oversupply and support a price rebound for NAND Flash.

During its first post-Western Digital spinoff investor day, SanDisk showed something it has been working on to tackle the AI sector. High-bandwidth flash (HBF) is a new memory architecture that combines 3D NAND flash storage with bandwidth capabilities comparable to high-bandwidth memory (HBM). The HBF design stacks 16 3D NAND BiCS8 dies using through-silicon vias, with a logic layer enabling parallel access to memory sub-arrays. This configuration achieves 8 to 16 times greater capacity per stack than current HBM implementations. A system using eight HBF stacks can provide 4 TB of VRAM to store large AI models like GPT-4 directly on GPU hardware. The architecture breaks from conventional NAND design by implementing independently accessible memory sub-arrays, moving beyond traditional multi-plane approaches. While HBF surpasses HBM's capacity specifications, it maintains higher latency than DRAM, limiting its application to specific workloads.

SanDisk has not disclosed its solution for NAND's inherent write endurance limitations, though using pSLC NAND makes it possible to balance durability and cost. The bandwidth of HBF is also unknown, as the company hasn't put out details yet. SanDisk Memory Technology Chief Alper Ilkbahar confirmed the technology targets read-intensive AI inference tasks rather than latency-sensitive applications. The company is developing HBF as an open standard, incorporating mechanical and electrical interfaces similar to HBM to simplify integration. Some challenges remain, including NAND's block-level addressing limitations and writing endurance constraints. While these factors make HBF unsuitable for gaming applications, the technology's high capacity and throughput characteristics align with AI model storage and inference requirements. SanDisk has announced plans for three generations of HBF development, indicating a long-term commitment to the technology.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2024. The Company posted KRW 75.8 trillion in consolidated revenue and KRW 6.5 trillion in operating profit in the quarter ended December 31, 2024. For the full year, it reported KRW 300.9 trillion in annual revenue and KRW 32.7 trillion in operating profit.

Although fourth quarter revenue and operating profit decreased on a quarter-on-quarter (QoQ) basis, annual revenue reached the second-highest on record, surpassed only in 2022. Meanwhile, operating profit was down KRW 2.7 trillion QoQ, due to soft market conditions especially for IT products, and an increase in expenditures including R&D. In the first quarter of 2025, while overall earnings improvement may be limited due to weakness in the semiconductors business, the Company aims to pursue growth through increased sales of smartphones with differentiated AI experiences, as well as premium products in the Device eXperience (DX) Division.

Yangtze Memory Technologies Co. has begun shipping its fifth-generation 3D NAND memory chips, featuring 294 total layers and 232 active layers, according to an analysis from TechInsights. The new chips achieve bit density near 20 Gb per square millimeter (19.8 Gb/mm²), comparable to current offerings from SK Hynix and approaching Kioxia/Western Digital's latest products. YMTC's design uses hybrid bonding to connect the memory array with logic components, suggesting that Chinese memory makers are up to speed on the packaging standards that their non-sanctioned competitors use. The company has opted for a quiet release without formal announcements, a departure from typical industry practice. This low-key approach may be related to ongoing US trade restrictions on Chinese semiconductor companies.

While not setting records for active layers, SK Hynix's upcoming 321-layer chip leads in that metric, and YMTC's achievement in total layer count demonstrates continued technical progress. The chip uses string stacking technology, though the specific configuration of the layer arrays remains unclear. Other specifications show the new chip employs YMTC's Xtacking 4.0 architecture and triple-level cell (TLC) design. This matches major competitors' architecture type, though detailed performance metrics such as interface speeds have not been disclosed. The 5th generation NAND focuses on getting density on the right track. However, we expect YMTC to continue development at the same speed, match SK Hynix with 321-layer chips, and surpass it with Xtacking 5.0 in the near future.

Western Digital Corp. today reported fiscal second quarter 2025 financial results.

"As we finalize the separation of our businesses, we are confident that both Western Digital and Sandisk will continue driving innovation and providing compelling storage solutions to customers while delivering long-term shareholder value," said David Goeckeler, Western Digital CEO. "We expect that our strong performance in HDD and our strategic approach to managing our Flash business within the New Era of NAND will allow each company to capture the growing demand for storage driven by the AI Data Cycle."

In the design of wearable devices, every millimeter matters. As AI technology becomes deeply integrated, wearable devices demand not only enhanced performance but also the ability to deliver more functionalities within highly limited spaces. Recently, Longsys introduced a 7.2 mm × 7.2 mm subsize eMMC, providing a groundbreaking memory solution for optimizing the physical space of AI wearables.

Ultra-Compact: Unlocking New Possibilities for Wearable Design
7.2 mm × 7.2 mm is one of the smallest subsize eMMCs currently available on the market, achieving maximum space efficiency. Its 153 solder balls nearly cover the entire panel, pushing the design to the very edge of physical limits. Compared to the standard 11.5 mm × 13 mm eMMC, its surface area is reduced by approximately 65%, with a thickness of just 0.8 mm. Featuring a lightweight design, it weighs only 0.1 g (approx.), nearly 67% lighter than the standard 0.3 g eMMC. This ultra-compact design frees up additional space for other internal components, enabling wearable devices to maintain a sleek and lightweight form while integrating more functional modules to meet diverse user demands.

TrendForce's latest research report highlights that the NAND Flash industry will continue to face dual pressure from weak demand and oversupply in 2025. In response, manufacturers including Micron, Kioxia/SanDisk, Samsung, and SK hynix/Solidigm have similar plans to cut production—a move that could accelerate industry consolidation in the long term.

TrendForce reports that NAND Flash manufacturers are primarily implementing production cuts by lowering utilization rates and delaying process upgrades. These actions are driven by three major factors:

Kioxia had a small dugout at the 2025 International CES. The NAND flash major tends to have a much bigger booth at FMS than CES. The one in Vegas had its latest enterprise SSDs, all of which were launched through 2024, and a couple of new things. We first got a practical demo of how Kioxia achieves 218 layers of NAND flash in its latest generation of BiCS Flash using an architectural innovation called CBA—CMOS directly bonded to array. In CBA, the cell array acts like a pizza topping to the crust that is the CMOS layer, rather than being arranged side-by-side. This allows for greater density of flash cells. This also has certain performance and power advantages.

Next up, the company showed us their automotive-grade UFS 4.0 non-volatile storage device, which uses the latest 218-layer 3D NAND flash memory. This device was announced toward the end of 2024, and gathered a salad of certifications that make it fit for the latest generation of automobiles with advanced technology such as FSD, or an infotainment system that's practically as powerful as a PC. We also got a fascinating look at the testbed Kioxia uses to validate its automotive UFS 4.0 devices.

Micron Technology, Inc. (Nasdaq: MU) broke ground today on a new High-Bandwidth Memory (HBM) advanced packaging facility adjacent to the company's current facilities in Singapore. Micron marked the occasion with a ceremony attended by Gan Kim Yong, Deputy Prime Minister and Minister for Trade and Industry of Singapore, Png Cheong Boon, Chairman of the Singapore Economic Development Board, Pee Beng Kong, Executive Vice President of the Singapore Economic Development Board, and Tan Boon Khai, CEO of JTC Corporation.

The new HBM advanced packaging facility will be the first facility of its kind in Singapore. Operations for the new facility are scheduled to begin in 2026, with meaningful expansion of Micron's total advanced packaging capacity beginning in calendar 2027 to meet the demands of AI growth. The launch of this facility will further strengthen Singapore's local semiconductor ecosystem and innovation.

This week at CES 2025, KIOXIA America, Inc. will highlight the transformative potential of flash memory. As pioneers of NAND flash technology, KIOXIA will demonstrate how its innovative solutions empower users to achieve more, tackle challenges, and unlock creativity—making everyday moments and groundbreaking innovations possible.

Visitors to the KIOXIA exhibit will discover how flash memory is redefining storage for a digital-first world. The company will showcase cutting-edge solutions for diverse industries, from memory and SSDs for artificial intelligence and automotive to flash products for consumer and industrial applications.

SK hynix has returned to Las Vegas for Consumer Electronics Show (CES) 2025, showcasing its latest AI memory innovations reshaping the industry. Held from January 7-10, CES 2025 brings together the brightest minds and groundbreaking technologies from the world's leading tech companies. This year, the event's theme is "Dive In," inviting attendees to immerse themselves in the next wave of technological advancement. SK hynix is emphasizing how it is driving this wave through a display of leading AI memory technologies at the SK Group exhibit. Along with SK Telecom, SKC, and SK Enmove, the company is highlighting how the Group's AI infrastructure brings about true change under the theme "Innovative AI, Sustainable Tomorrow."

Groundbreaking Memory Tech Driving Change in the AI Era
Visitors enter SK Group's exhibit through the Innovation Gate, greeted by a video of dynamic wave-inspired visuals which symbolize the power of AI. The video shows the transformation of binary data into a wave which flows through the exhibition, highlighting how data and AI drives change across industries. Continuing deeper into the exhibit, attendees make their way into the AI Data Center area, the focal point of SK hynix's display. This area features the company's transformative memory products driving progress in the AI era. Among the cutting-edge AI memory technologies on display are SK hynix's HBM, server DRAM, eSSD, CXL, and PIM products.

The world's leading memory module and flash memory brand, ADATA Technology, will be participating in CES 2025 with its gaming brand XPG and industrial-grade embedded storage brand ADATA Industrial. ADATA will be bringing its theme of "Innovate for a Better Tomorrow" to the Venetian in Las Vegas, located at booth Titian #2204 from January 7th to 10th. An online exhibition will be launched during this period for consumers around the world to experience a full range of innovative products in real time.

This year, ADATA will present three exhibition zones, each with an overarching theme. The "Artificial Intelligence Computing Solutions Zone" will showcase XPG AICORE DDR5 R-DIMM overclocked memory and XPG LANCER CUDIMM RGB DDR5 gaming memory. Additional products in this zone include the XPG DEFENDER SFF small form factor commercial chassis and XPG EDGECORE TFX power supply, which are designed to meet the needs of edge computing systems and demonstrate ADATA's comprehensive investment in the evolution of the AI era. The "Innovative Technology and Smart Mobile Lifestyle Zone" will see the launch of multiple Gen 5 SSD cooling solutions and highlight the world's first eco-friendly XPG LANCER NEON RGB DDR5 gaming memory with PCB heat dissipating coating, creating a new benchmark for cooling and efficient data transfer in the high-speed storage industry. The "Xtreme Performance Gear Zone" will showcase highly efficient gaming systems, top-notch power supplies, and cooling solutions, taking gaming applications to a new level. Each exhibit combines innovative technologies and high-performance products, and consumers around the world can join online for a one of a kind experience!

A South Korean online retailer has listed Huawei's eKitStore Extreme 200E M.2 NVMe SSD for sale at 47,500 Won ($32) for the 1 TB model. This marks Huawei's entry into consumer storage products after previously only manufacturing server SSDs. The PCIe 4.0 drive's specifications show read speeds of 7,400 MB/s and write speeds of 6,700 MB/s. Beyond confirming the use of QLC memory without a DRAM cache, Huawei has not disclosed the drive's internal components. Due to trade restrictions, both the controller and memory chips likely come from Chinese manufacturers, though specific suppliers remain unknown. Chinese makers have been recorded to use Silicon Motion's SSD controllers, but domestic controllers are also an option here.

Manufacturing costs for similar drives typically exceed $32, raising questions about the pricing strategy. The drive's components could match those used in other brands' SSDs, as multiple storage companies often use identical parts in their products. For NAND Flash, Huawei likely sourced its chips from YMTC, whose Xtacking 4.0 proves to be quite a success. The drive has appeared only at one retailer so far, and Huawei has not announced plans for sales in other regions. This price is notably lower than comparable PCIe 4.0 drives. Common retail prices for 1 TB PCIe 4.0 SSDs are typically more than double this amount. Whether this represents a temporary price or a long-term strategy remains unclear. Perhaps Huawei is operating at a net loss to gain some customers, with possible plans for more SSDs in the future, along with the PCIe 5.0 version.

An SSD from Chinese manufacturer Zhitai has demonstrated impressive performance metrics, reaching sequential read speeds of up to 14.5 GB/s. Under the hood, the TiPro9000 2 TB SSD combines domestic YMTC 5th Generation 3D TLC NAND technology with Silicon Motion's SM2508 controller. The drive's architecture features a 2 GB LPDDR4X DRAM chip and two 3D TLC NAND dies utilizing 232-layer YMTC's Xtacking 4.0 architecture. While initial testing revealed peak sequential read and write speeds of 14,527 MB/s and 13,869 MB/s respectively, these rates are sustained through the SLC cache for approximately 24 seconds. Performance testing showed distinct operational phases. After the initial burst speed period, transfer rates stabilize at around 4,000 MB/s for 325 seconds before dropping to 1,700-1,800 MB/s. The drive then demonstrates recovery capabilities, returning to 4,000 MB/s after 259 seconds.

Random performance specifications are equally impressive, with the manufacturer claiming up to 2 million IOPS for reads and 1.6 million IOPS for writes. The TiPro9000's performance metrics position it competitively among top-tier PCIe 5.0 x4 drives. This shows the capabilities of Chinese-manufactured YMTC NAND memory technology paired with Silicon Motion's controller expertise, putting a lot of faith in China-made NAND Flash. With growing needs for AI and big data applications, performant storage systems are becoming key to many systems. However, Chinese companies still need a solid (pun intended) controller to compete with Western technology to complete storage manufacturing. Alibaba is working on a RISC-V-based controller, while InnoGrit has also been sampling controllers. We have yet to see commercial applications based on these two.

SK hynix Inc. announced today that it has completed development of its high-capacity SSD product, PS1012 U.2, designed for AI data centers. As the era of AI accelerates, the demand for high-performance enterprise SSDs (eSSD) is rapidly increasing, and QLC technology, which enables high capacity, has become the industry standard. In line with this trend, SK hynix has developed a 61 TB product using this technology and introduced it to the market.

SK hynix has been leading the SSD market for AI data centers with Solidigm, a subsidiary which commercialized QLC-based eSSD for the first time in the world. With the development of PS1012, the company expects to build a balanced SSD portfolio, thereby maximizing synergy between the two companies. With the latest 5th generation (Gen 5) PCIe, PS1012 doubles its bandwidth compared to 4th generation based products. As a result, the data transfer speed reaches 32 GT/s (Gig-transfers per second), with the sequential read performance of 13 GB/s (Gigabyte per second), which is twice that of previous generation products.

Although it was revealed back in March this year, SK hynix new Platinum P51 PCIe 5.0 has only just now launched in South Korea and the specs have been boosted since March. The official sequential read speed is now rated at 14.7 GB/s vs. 13.5 GB/s in March and likewise, the sequential write speed has increased to 13.4 GB/s from 11.5 GB/s. We're also looking at a random IOPS read speed of up to 2,300k and random write IOPS of up to 2,400k. This compares really favourably compared to Phison E26 based SSDs, especially the random IOPS are very impressive.

However, it's not all good news, as the endurance tops out at 1200 TBW on the 2 TB SKU, which is pretty much what every other modern SSD offers today and somewhat disappointing considering that we're looking at SK hynix 238 layer 3D TLC NAND here. The 2 TB SKU is also the largest size available for now and the Platinum P51 will also come in 1 TB and 500 GB flavours. Another not so great, is the 10 W power consumption, even though SK hynix claims it's industry leading, but we know that this isn't true, as the Silicon Motion SM2508 controller is more power efficient than that. The drive has already been quickly benchmarked by South Korean hardware site Quasar Zone and it delivers in terms of the claimed speeds from the manufacturer, at least according to the CrystalDiskMark numbers. No pricing has tipped up as yet, so we'll have to wait to see how competitive the drive will be in an already crowded market. However, it's worth keeping in mind that SK hynix tends to charge a premium for its SSDs over many of its competitors.

Update Dec 14th: The 2 TB SKU has a retail price of 473,000 Korean Won, which equals about US$330, making it prohibitively expensive at the moment, even compared to most other PCIe 5.0 SSDs on the market. The 1 TB SKU comes in at 279,000 Korean Won, or about US$195. The Korean prices include 10% VAT/sales tax.

Global sales of total semiconductor manufacturing equipment by original equipment manufacturers (OEMs) are forecast to set a new industry record, reaching $113 billion in 2024, growing 6.5% year-on-year, SEMI announced today in its Year-End Total Semiconductor Equipment Forecast - OEM Perspective at SEMICON Japan 2024. Semiconductor manufacturing equipment growth is expected to continue in the following years, reaching new records of $121 billion in 2025 and $139 billion in 2026, supported by both the front-end and back-end segments.

"Three consecutive years of projected growth in investments in semiconductor manufacturing reflect the vital role our industry plays in underpinning the global economy and advancing technology innovation," said Ajit Manocha, SEMI president and CEO. "Since our July 2024 forecast, the outlook for 2024 semiconductor equipment sales has brightened, especially with stronger-than-expected investments from China and in AI-related sectors. Together with our forecast extension through 2026, it highlights the robust growth drivers across segments, applications, and regions."

Chinese semiconductor memory giant YMTC is reportedly manufacturing anywhere between 400-500,000 wafers per year of leading-edge NAND memory, all on domestically produced wafers. According to Mayuki Hashimoto, CEO and Chairman of SUMCO, a Japanese company supplying raw silicon ingots and polished wafers, they are seeing a significant business impact stemming from China's growing self-reliance, especially with companies like YMTC producing its own silicon ingots and polished wafers. This has led to SUMCO's decreasing revenue, where the CEO shared some insights about Chinese ambitions. He added that China is producing about one million wafers of silicon per year, most of which are test wafers. This includes test runs from companies like SMIC and its customers, such as T-Head, HiSilicon, and others.

Last year, YMTC, with its Xtacking 4.0 3D NAND flash architecture, was the first company to achieve a 200+ layer count in the 3D NAND space. The company's product, X4-9070, a 232-layer TLC 3D NAND, uses multiple silicon wafers, hence growing its massive consumption of silicon that is projected to reach 500,000 wafers per year. Given that this is all homegrown silicon from ingots to NAND, this is a massive success for Chinese self-reliance efforts but a huge blow to companies that used to supply Chinese firms with raw materials. Although the company uses custom silicon, it still relies on foreign tools, photoresists, and pre-cursors. There are some indications that YMTC is developing its own tools; it is a plan of a broader strategy in the Chinese semiconductor industry to develop every step of the semiconductor manufacturing process. Huawei is also there to develop EUV scanners, and YMTC could help with its memory business, which is in need of a new tool.

SK hynix Inc. announced today that it has started mass production of the world's first triple level cell-based 321-high 4D NAND Flash with 1 Tb capacity. Following its previous record as the industry's first provider of the world's highest 238-layer NAND since June last year, SK hynix has become the world's first supplier of the NAND with more than 300 layers by finding a technological breakthrough for stacking. The company plans to provide the 321-high products to customers from the first half of next year.

Stacking more than 300 layers came into reality as the company successfully adopted the "3 plugs" process technology. Known for its excellent production efficiency, the process electrically connects three plugs through an optimized follow-up process after three times of plug processes are finished. For the process, SK hynix developed a low-stress material, while introducing the technology that automatically corrects alignments among the plugs.

Samsung Electronics Co., Ltd. today announced that it held a tool-in ceremony for its new semiconductor research and development complex (NRD-K) at its Giheung campus, marking a significant leap into the future. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. As a state-of-the-art facility, NRD-K broke ground in 2022 and is set to become a key research base for Samsung's memory, system LSI and foundry semiconductor R&D. With its advanced infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion by 2030 for the complex in an area covering about 109,000 square meters (m²) within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025.

"NRD-K will bolster our development speed, enabling the company to create a virtuous cycle to accelerate fundamental research on next generation technology and mass production. We will lay the foundation for a new leap forward in Giheung, where Samsung Electronics' 50-year history of semiconductors began, and create a new future for the next 100 years," said Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division at Samsung Electronics.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD230G: NAND Flash Interface Interoperability Standard. JESD230G introduces speeds of up to 4800 MT/s, as compared to 400 MT/s in the first version of JESD230 published in 2011. Also, JESD230G adds a separate Command/Address Bus Protocol (SCA), delivering enhanced throughput and efficiency by allowing hosts and NAND devices to take maximum advantage of the latest interface speeds. JESD230G is available for free download from the JEDEC website.

"JEDEC is excited to release JESD230G," said David Landsman, Distinguished Engineer at Western Digital and Chair of the JEDEC NAND TG. He added, "This version of JESD230 further advances the capabilities of NAND flash devices to meet the growing demands of their expanding range of applications and continues the JEDEC tradition of building interoperable ecosystems through open industry standards."

Phison Electronics, a leading innovator in NAND Flash technologies, today announced the newest addition and highest available capacity of the Pascari D-Series data center-optimized SSDs to be showcased at SC24. The Pascari D205V drive is the first PCIe Gen 5 128 TB data center class SSD available for preorder to address shifting storage demands across use cases including AI, media and entertainment (M&E), research and beyond. In a single drive the Pascari D205V offers 122.88 TB of storage, creating a four-to-one capacity advantage over traditional cold storage hard drives while shrinking both physical footprint and OPEX costs.

While the exponential data-deluge continues to strain data center infrastructure, organizations face a tipping point to maximize investment while remaining conscious of footprint, cost efficiency and power consumption. The Pascari D205V read-intensive SSD combines Phison's industry-leading X2 controller and the latest 2 Tb 3D QLC technology engineered to enable unequaled 14,600 MB/s sequential read and 3,000K IOPS random read performance. By doubling both the read speeds against Gen 4 as well as the capacity against the 61.44 TB enterprise SSDs currently available on the market today, the Pascari D205V allows customers to upgrade to larger datasets per server, top-tier capacity-per-watt utilization and unparalleled read performance.