SK hynix Inc. announced today that it has started mass production of the world's first triple level cell-based 321-high 4D NAND Flash with 1 Tb capacity. Following its previous record as the industry's first provider of the world's highest 238-layer NAND since June last year, SK hynix has become the world's first supplier of the NAND with more than 300 layers by finding a technological breakthrough for stacking. The company plans to provide the 321-high products to customers from the first half of next year.

Stacking more than 300 layers came into reality as the company successfully adopted the "3 plugs" process technology. Known for its excellent production efficiency, the process electrically connects three plugs through an optimized follow-up process after three times of plug processes are finished. For the process, SK hynix developed a low-stress material, while introducing the technology that automatically corrects alignments among the plugs.

Samsung Electronics Co., Ltd. today announced that it held a tool-in ceremony for its new semiconductor research and development complex (NRD-K) at its Giheung campus, marking a significant leap into the future. About 100 guests, including those from suppliers and customers, were in attendance to celebrate the milestone. As a state-of-the-art facility, NRD-K broke ground in 2022 and is set to become a key research base for Samsung's memory, system LSI and foundry semiconductor R&D. With its advanced infrastructure, research and product-level verification will be able to take place under one roof. Samsung plans to invest about KRW 20 trillion by 2030 for the complex in an area covering about 109,000 square meters (m²) within its Giheung campus. The complex will also include an R&D-dedicated line scheduled to begin operation in mid-2025.

"NRD-K will bolster our development speed, enabling the company to create a virtuous cycle to accelerate fundamental research on next generation technology and mass production. We will lay the foundation for a new leap forward in Giheung, where Samsung Electronics' 50-year history of semiconductors began, and create a new future for the next 100 years," said Young Hyun Jun, Vice Chairman and Head of the Device Solutions Division at Samsung Electronics.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD230G: NAND Flash Interface Interoperability Standard. JESD230G introduces speeds of up to 4800 MT/s, as compared to 400 MT/s in the first version of JESD230 published in 2011. Also, JESD230G adds a separate Command/Address Bus Protocol (SCA), delivering enhanced throughput and efficiency by allowing hosts and NAND devices to take maximum advantage of the latest interface speeds. JESD230G is available for free download from the JEDEC website.

"JEDEC is excited to release JESD230G," said David Landsman, Distinguished Engineer at Western Digital and Chair of the JEDEC NAND TG. He added, "This version of JESD230 further advances the capabilities of NAND flash devices to meet the growing demands of their expanding range of applications and continues the JEDEC tradition of building interoperable ecosystems through open industry standards."

Phison Electronics, a leading innovator in NAND Flash technologies, today announced the newest addition and highest available capacity of the Pascari D-Series data center-optimized SSDs to be showcased at SC24. The Pascari D205V drive is the first PCIe Gen 5 128 TB data center class SSD available for preorder to address shifting storage demands across use cases including AI, media and entertainment (M&E), research and beyond. In a single drive the Pascari D205V offers 122.88 TB of storage, creating a four-to-one capacity advantage over traditional cold storage hard drives while shrinking both physical footprint and OPEX costs.

While the exponential data-deluge continues to strain data center infrastructure, organizations face a tipping point to maximize investment while remaining conscious of footprint, cost efficiency and power consumption. The Pascari D205V read-intensive SSD combines Phison's industry-leading X2 controller and the latest 2 Tb 3D QLC technology engineered to enable unequaled 14,600 MB/s sequential read and 3,000K IOPS random read performance. By doubling both the read speeds against Gen 4 as well as the capacity against the 61.44 TB enterprise SSDs currently available on the market today, the Pascari D205V allows customers to upgrade to larger datasets per server, top-tier capacity-per-watt utilization and unparalleled read performance.

Solidigm, a leading provider of innovative NAND flash memory solutions, announced today the introduction of the world's highest capacity PCIe solid-state drive (SSD): the 122 TB (terabyte) Solidigm D5-P5336 data center SSD. The D5-P5336 doubles the storage space of Solidigm's earlier 61.44 TB version of the drive and is the world's first SSD with unlimited Random Write endurance for five years—offering an ideal solution for AI and data-intensive workloads. Just how much storage is 122.88 TB? Roughly enough for 4K-quality copies of every movie theatrically released in the 1990s, 2.6 times over.

Data storage power, thermal and space constraints are accelerating as AI adoption increases. Power and space-efficient, the new 122 TB D5-P5336 delivers industry-leading storage efficiency from the core data center to the edge. Data center operators can deploy with confidence the 122 TB D5-P5336 from Solidigm, the proven QLC (quad-level cell) density leader with more than 100EB (exabytes) of QLC-based product shipped since 2018.

Innodisk, a leading global AI solution provider, has introduced its new E1.S SSD, which is specifically designed to meet the demands of growing edge computing applications. The E1.S edge server SSD offers exceptional performance, reliability, and thermal management capabilities to address the critical needs of modern data-intensive environments and bridge the gap between traditional industrial SSDs and data center SSDs.

As AI and 5G technologies rapidly evolve, the demands on data processing and storage continue to grow. The E1.S SSD addresses the challenges of balancing heat dissipation and performance, which has become a major concern for today's SSDs. Traditional industrial and data center SSDs often struggle to meet the needs of edge applications. Innodisk's E1.S eliminates these bottlenecks with its Enterprise and Data Center Standard Form Factor (EDSFF) design and offers a superior alternative to U.2 and M.2 SSDs.

Micron Technology, Inc., today announced it has begun qualification of the 6550 ION NVMe SSD with customers. The Micron 6550 ION is the world's fastest 60 TB data center SSD and the industry's first E3.S and PCIe Gen 5 60 TB SSD. It follows the success of the award-winning 6500 ION and is engineered to provide best-in-class performance, energy efficiency, endurance, security, and rack density for exascale data center deployments. The 6550 ION excels in high-capacity NVMe workloads such as networked AI data lakes, ingest, data preparation and check pointing, file and object storage, public cloud storage, analytic databases, and content delivery.

"The Micron 6550 ION achieves a remarkable 12 GB/s while using just 20 watts of power, setting a new standard in data center performance and energy efficiency," said Alvaro Toledo, vice president and general manager of Micron's Data Center Storage Group. "Featuring a first-to-market 60 TB capacity in an E3.S form factor and up to 20% better energy efficiency than competitive drives, the Micron 6550 ION is a game-changer for high-capacity storage solutions to address the insatiable capacity and power demands of AI workloads."

Both pictures and videos of a partial teardown of Apple's recently launched Mac mini with the M4 SoC have appeared online courtesy of various Chinese sources. There are at least two interesting parts to these partial teardowns and they're related to storage and WiFi. On the storage front, Apple has moved away from having soldered NAND chips straight on the main PCB of the Mac mini, to instead having them on a custom PCB which is similar to M.2, but a custom Apple design. The PCB pictured contained a pair of 128 GB NAND chips and with the source of the teardown being from China, there's also a video showing a repair shop desoldering the two chips and replacing them with two 1 TB chips, or in other words, the SSD was upgraded from 256 GB to 2 TB.

The upgrade brought with it some extra performance as well, even if the write speed remained at a comparatively slow 2900 MB/s, the read speed went up from 2000 MB/s to 3300 MB/s which is a significant gain in performance. This is obviously not a consumer friendly upgrade path, but we'd expect to see third party upgrade options at some point in the future, assuming there's no black listing of third party storage modules. The NAND controller is still likely to be integrated into Apple's SoC, but the PCB that the NAND flash chips are mounted onto appears to have some kind of SPI flash on it as well, which might make third party upgrades a lot harder.

As AI accelerates data expansion, enterprises face increasing challenges in managing large volumes of data effectively. Tiered storage solutions have emerged as the preferred approach for balancing performance and costs. Solid State Drives (SSDs), with their fast read and write speeds, low latency and high power efficiency, are becoming the dominant storage selection for data centers and AI servers. Among SSD techniques, QLC SSDs offer unique advantages in costs and storage density, making them particularly suited for read-intensive AI applications. Therefore, high-capacity SSDs, such as 32 TB and 64 TB models, are gaining traction as a new storage solution in the market.

Read-Intensive Applications: Mainstream Enterprise SSD Use Cases
According to the latest research from FI (Forward Insight), up to 91% of current PCIe SSDs deployments are used in applications with DWPD of less than 1, and the share is expected to reach 99% by 2028. this shift underscores the increasing prevalence of read-intensive applications and data centers, a space where QLC SSDs excel.

ADATA has launched the Legend 860 M.2 NVMe Gen 4 SSD series, aimed at mid-range users seeking a fast and reliable storage solution for PCs, laptops, or PS5 devices. Utilizing the PCIe Gen 4 x4 interface, the Legend 860 delivers sequential read and write speeds of up to 6,000 MB/s and 5,000 MB/s, respectively—three times faster than standard PCIe Gen 3 SSDs and ten times faster than SATA SSDs.

The lineup consists of three models with capacities of 500 GB, 1 TB, and 2 TB, each equipped with a slim aluminium heatsink. The ADATA Legend 860 utilizes 3D NAND flash chips and incorporates an SLC cache algorithm, HMB (Host Memory Buffer) technology, and an LDPC (Low-Density Parity Check) error correction mechanism, providing up to 640 TB TBW (Terabytes Written). ADATA offers a 5-year limited warranty, though pricing has not yet been disclosed.

Samsung Electronics today reported financial results for the third quarter ended Sept. 30, 2024. The Company posted KRW 79.1 trillion in consolidated revenue, an increase of 7% from the previous quarter, on the back of the launch effects of new smartphone models and increased sales of high-end memory products. Operating profit declined to KRW 9.18 trillion, largely due to one-off costs, including the provision of incentives in the Device Solutions (DS) Division. The strength of the Korean won against the U.S. dollar resulted in a negative impact on company-wide operating profit of about KRW 0.5 trillion compared to the previous quarter.

In the fourth quarter, while memory demand for mobile and PC may encounter softness, growth in AI will keep demand at robust levels. Against this backdrop, the Company will concentrate on driving sales of High Bandwidth Memory (HBM) and high-density products. The Foundry Business aims to increase order volumes by enhancing advanced process technologies. Samsung Display Corporation (SDC) expects the demand of flagship products from major customers to continue, while maintaining a quite conservative outlook on its performance. The Device eXperience (DX) Division will continue to focus on premium products, but sales are expected to decline slightly compared to the previous quarter.

Samsung is currently mass-producing its 9th generation V-NAND flash memory chips with 286 layers unveiled this April. According to the Korean Economic Daily, the company targets V-NAND memory chips with at least 400 stacked layers by 2026. In 2013, Samsung became the first company to introduce V-NAND chips with vertically stacked memory cells to maximize capacity. However, stacking beyond 300 levels proved to be a real challenge with the memory chips getting frequently damaged. To address this problem, Samsung is reportedly developing an improved 10th-generation V-NAND that is going to use the Bonding Vertical (BV) NAND technology. The idea is to manufacture the storage and peripheral circuits on separate layers before bonding them vertically. This is a major shift from the current Co-Packaged (CoP) technology. Samsung stated that the new method will increase the density of bits per unit area by 1.6 times (60%), thus leading to increased data speeds.

Samsung's roadmap is truly ambitious, with plans to launch the 11th generation of NAND in 2027 with an estimated 50% improvement in I/O rates, followed by 1,000-layer NAND chips by 2030. Its competitor, SK hynix, is also working on 400-layer NAND aiming to have the technology ready for mass production by the end of 2025, as we previously mentioned in August. Samsung, the current HBM market leader with a 36.9% market share have also plans for its DRAM sector intending to introduce the sixth-generation 10 nm DRAM, or 1c DRAM by the first half of 2025. Then we can expect to see Samsung's seventh-generation 1d nm (still on 10 nm) in 2026, and by 2027 the company hopes to release its first generation sub-10 nm DRAM, or 0a DRAM memory that will use a Vertical Channel Transistor (VCT) 3D structure similar to what NAND flash utilizes.

SK hynix Inc. announced today that it recorded 17.5731 trillion won in revenues, 7.03 trillion won in operating profit (with an operating margin of 40%), and 5.7534 trillion won in net profit (with a net margin of 33%) in the third quarter this year. Quarterly revenues marked all-time high, exceeding the previous record of 16.4233 trillion won in the second quarter of this year by more than 1 trillion won. Operating profit and net profit also far exceeded the record of 6.4724 trillion won and 4.6922 trillion won in the third quarter of 2018 during the semiconductor super boom.

SK hynix emphasized that the demand for AI memory continued to be strong centered on data center customers, and the company marked its highest revenue since its foundation by expanding sales of premium products such as HBM and eSSD. In particular, HBM sales showed excellent growth, up more than 70% from the previous quarter and more than 330% from the same period last year.

Kioxia Corporation, a world leader in memory solutions, today announced that the company's research papers have been accepted for presentation at IEEE International Electron Devices Meeting (IEDM) 2024, a prestigious international conference to be held in San Francisco, USA, from December 7th to 11th.

Kioxia is committed to the research and development of semiconductor memory, which is indispensable for the advancement of AI and the digital transformation of society. Beyond its state-of-the-art three-dimensional (3D) flash memory technology BiCS FLASH, Kioxia excels at research in emerging memory solutions. The company is constantly striving to meet the needs for future computing and storage systems with innovative memory products.

TrendForce's latest findings reveal that NAND Flash products have been impacted by weaker-than-expected seasonal demand in the second half of 2024, leading to a decline in wafer contract prices in Q3. This downward trend is projected to deepen, with prices expected to drop by more than 10% in Q4.

Enterprise SSDs are the only segment likely to see modest price growth—supported by stable order momentum—with contract prices forecast to rise by 0-5% in Q4. However, PC SSDs and UFS will see more cautious procurement strategies from buyers, as weaker-than-expected sales of end products drive buyers to adopt a conservative approach. As a result, TrendForce projects overall NAND Flash contract prices will decline by 3-8% in Q4.

Patriot Memory, a leading manufacturer of high-performance gaming memory modules, SSDs, flash memory, and gaming peripherals, today announced the launch of its latest innovation under the Viper Gaming brand: the Viper PV573 PCIeGen5 x4 M.2 2280 SSD. This product reinforces Patriot's leadership in cutting-edge technology, pushing speed boundaries beyond its predecessor, the PV553.

The Viper PV573 SSD utilizes advanced 3D NAND vertical stacking technology, significantly enhancing storage density while reducing power consumption and delivering faster read and write speeds. This innovation also improves durability, making it a reliable choice for users with demanding storage needs. With capacity options of up to 4 TB, the Viper PV573combines powerful performance in a compact, portable form factor, achieving the perfect balance of high capacity and efficiency within a small footprint.

Greenliant is now sampling high-endurance EnduroSLC NVMe M.2 2242 and 2280 ArmourDrive EX Series solid state drives (SSDs), providing 75,000 and 150,000 program-erase (P/E) cycles. Operating between -40 and +95 degrees Celsius, NVMe M.2 ArmourDrive EX Series SSDs offer high reliability and long-term support required by leading customers in aerospace and defense, industrial, transportation and networking.

Greenliant is also sampling upgraded NVMe M.2 2242 / 2280 ArmourDrive PX Series SSDs with high-quality industrial 3-bit-per-cell (TLC) 3D NAND that support 5,000 P/E cycles. Optimized for high performance and low power consumption, both EX and PX series products provide the convenience of removability. Offered from popular 2280 (GLS88AS) to small 2242 (GLS88CS) form factors and available in a wide range of capacities, these single-sided, thin-profile SSDs are ideal for space-constrained designs.

Recent reports from South China Morning Post unveil developments in China's semiconductor industry, with significant progress in two critical areas: advanced memory chips and silicon photonics. These breakthroughs mark important steps in the country's pursuit of technological self-reliance amid global trade tensions. In Wuhan, a startup called Numemory has unveiled a new storage-class memory (SCM) chip. The "NM101" chip boasts an impressive 64 GB capacity, far surpassing the megabyte-range offerings currently dominating the market. This novel chip blends the strengths of traditional DRAM and NAND flash storage, delivering rapid, non-volatile, persistent memory ideal for server and data center applications. The NM101's design prioritizes high capacity, density, and bandwidth while maintaining low latency. These characteristics make it particularly well-suited for data centers and cloud computing infrastructures. Initial reports suggest that storage devices incorporating this SCM technology can write an entire 10 GB high-definition video file in a mere second.

Concurrently, another Wuhan-based institution, JFS Laboratory, has achieved a milestone in silicon photonics research. The state-backed facility successfully merged a laser light source with a silicon chip, a feat previously unrealized in China. This innovation in silicon photonics leverages light signals for data transmission, potentially circumventing the looming physical constraints of traditional electric signal-based chip designs. This accomplishment is viewed as addressing a crucial gap in China's optoelectronics capabilities, which used to lag behind Western chip designers and startups. Using silicon photonics, infrastructure scale-out can be sustained on a much larger scale without significant power consumption increase. While these developments represent significant progress, it's important to note that bridging the gap between laboratory breakthroughs and mass-produced, commercially viable products remains a substantial challenge. The path from research success to market dominance is often long and complex, requiring sustained investment and further technological refinement.

Micron Technology, Inc. today announced results for its fourth quarter and full year of fiscal 2024, which ended August 29, 2024.

Fiscal Q4 2024 highlights

• Revenue of $7.75 billion versus $6.81 billion for the prior quarter and $4.01 billion for the same period last year
• GAAP net income of $887 million, or $0.79 per diluted share
• Non-GAAP net income of $1.34 billion, or $1.18 per diluted share
• Operating cash flow of $3.41 billion versus $2.48 billion for the prior quarter and $249 million for the same period last year

Fiscal 2024 highlights

• Revenue of $25.11 billion versus $15.54 billion for the prior year
• GAAP net income of $778 million, or $0.70 per diluted share
• Non-GAAP net income of $1.47 billion, or $1.30 per diluted share
• Operating cash flow of $8.51 billion versus $1.56 billion for the prior year

Samsung Electronics, the world leader in advanced memory technology, today announced the release of the 990 EVO Plus, adding to its lineup of leading SSD products. With PCIe 4.0 support and latest NAND technology, the 990 EVO Plus is an ideal solution for consumers seeking enhanced performance and power efficiency on their PCs. Optimized for gaming, business and creative endeavors.

"Our daily lives are increasingly demanding more data with the images we share on social media and high-quality video streaming," said Hangu Sohn, Vice President of Memory Brand Product Biz Team at Samsung Electronics. "The 990 EVO Plus is built for laptop and desktop PC users seeking faster processing speeds and expanded storage capacity."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has successfully developed the industry's first PCIe 4.0 automotive SSD based on eighth-generation vertical NAND (V-NAND). With industry-leading speeds and enhanced reliability, the new auto SSD, AM9C1 is an optimal solution for on-device AI capabilities in automotive applications. With about 50% improved power efficiency compared to its predecessor, the AM991, the new 256 GB auto SSD will deliver sequential read and write speeds of up to 4400 MB/s and 400 MB/s, respectively.

"We are collaborating with global autonomous vehicle makers and providing high-performance, high-capacity automotive products," said Hyunduk Cho, Vice President and Head of Automotive Group at Samsung Electronics' Memory Business. "Samsung will continue to lead the Physical AI1 memory market that encompasses applications from autonomous driving to robotics technologies."

KLEVV, the premier consumer memory and storage brand introduced by Essencore, is keen to unveil the all-new GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD and CRAS C715 PCIe Gen3x4 NVMe M.2 SSD. Strategically named for its raw, unrivaled performance, the GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD offers top-of-the-line hardware and cutting-edge storage technology packed into a highly refined product.

As KLEVV's first-ever PCIe Gen 5 SSD, it boasts exceptional speeds with sequential read and write capabilities of up to 14,000 MB/s and 12,000 MB/s, respectively. Alongside an impressive 4K random IOPS of up to 1,400K, the GENUINE G560 sets a new standard in advanced storage solutions. Engineered with a revolutionary 23x-layer 3D NAND, the GENUINE G560 delivers unparalleled efficiency and reliability, ideal for professional gamers, content creators, and casual use.

Transcend Information Inc. (Transcend), a global leader in industrial memory storage, is proud to announce its first industrial-grade PCIe M.2 22110 SSD, the MTE730P. This SSD features Power Loss Protection (PLP) technology, ensuring robust data integrity even in the most demanding environments. With PCIe Gen 4 performance and capacities of up to 4 TB, the MTE730P meets the needs of high-end industrial automation, blade servers, data centers, and other modern storage applications.

Power Loss Protection: Create Higher Data Integrity
The MTE730P's Power Loss Protection (PLP) technology is a critical feature for applications such as automated manufacturing, medical systems, transportation systems, and financial transaction. It ensures that the built-in tantalum capacitors provide power to the controller and DRAM cache during power fluctuations or outages, guaranteeing maximum data integrity and security.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has begun mass producing PM9E1, a PCle 5.0 SSD with the industry's highest performance and largest capacity. Built on its in-house 5-nanometer (nm)-based controller and eighth-generation V-NAND (V8) technology, the PM9E1 will provide powerful performance and enhanced power efficiency, making it an optimal solution for on-device AI PCs. Key attributes in SSDs, including performance, storage capacity, power efficiency and security, have all been improved compared to its predecessor (PM9A1a).

"Our PM9E1 integrated with a 5 nm controller delivers industry-leading power efficiency and utmost performance validated by our key partners," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "In the rapidly growing on-device AI era, Samsung's PM9E1 will offer a robust foundation for global customers to effectively plan their AI portfolios."

The first reviews of Silicon Motion's new PCIe 5.0 NVMe SSD controller, the SM2508 are starting to appear online, and the good news is that the controller is as power efficient as promised by the company. Tom's hardware has put up their review of a reference design M.2 SSD from Silicon Motion and in their testing, equipped with 1 TB of Kioxia's 162-layer BiCS6 TLC NAND. It easily bests the competition when it comes to power efficiency. In their file copy test, it draws nearly two watts less than its nearest competitor and as much as three watts less than the most power hungry drive. It's still using about one watt more than the best PCIe 4.0 drives, but it goes to show that the production nodes matters, as the SM2508 is produced on a 6 nm node, compared to 12 nm for Phison's E26.

We should point out that the peak power consumption did go over nine watts, but only one of the Phison E26 drives managed to stay below 10 watts here. The most power hungry PCIe 5.0 SSD controller in the test, the InnoGrit IG5666 peaks at nearly 14 watts for comparison. Idle power consumption of the SM2508 is also very good, still drawing more than the PCIe 4.0 drives it was tested against, but far less than any of the other PCIe 5.0 drives. What about performance you ask? The reference drive places itself ahead of all the Phison E26 drives when it comes to sequential file transfers, regardless if it's to or from the drive. Random read IOPS also places right at the top, but it's somewhat behind when it comes to random writes, without being a slow drive by any means. Overall we're looking at a very promising new SSD controller from Silicon Motion with the SM2508 and TPU has also received a sample that is currently undergoing testing, so expect a review here soon.