Wednesday, February 26th 2025
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Samsung Aims for 1,000-Layer NAND by 2030, Begins Wafer Bonding at 400 Layers
Samsung aims to create 1,000-layer NAND by 2030 relying on its new "multi-BV" NAND design. The Bell reports that this plan involves stacking four wafers to overcome structural limits. Wafer bonding technology plays a crucial role in this progress and Samsung intends to use it to break the 1,000-layer barrier. Samsung Electronics DS division CTO, Song Jae-hyuk, pointed out that wafer bonding allows separate production of peripheral and cell wafers before joining them into one semiconductor. The Bell says this technology will likely appear first in Samsung's 10th-gen NAND (V10), while industry experts think a single wafer can hold about 500 NAND layers when implementing only cell structures. In the past, Samsung has used the COP (Cell on Peripheral) technique, a method that places the peripheral circuit on one wafer, with NAND cells stacked on top. However, as NAND layers grow, the lower peripheral parts face more pressure potentially affecting reliability.
Samsung's plan involves working with China's YMTC, which should offer a hybrid bonding patent for V10 NAND. ZDNet reports that the South Korean tech company will start making its V10 NAND in large quantities in the second half of 2025, with about 420-430 layers. Besides wafer bonding, Samsung adds other technologies to its NAND plan. The Bell points out that cold etching using molybdenum, and other new ideas will start with 400-layer NAND and play a key part in growing to 1,000 layers. Samsung isn't alone in trying to create ultra-high-layer NAND products. Japan's Kioxia also wants to reach this goal through its "multi-stack CBA" (CMOS Bonded to Array) technology. The company's plan is even bolder hoping to sell 1,000-layer 3D NAND by 2027.
Source:
TrendForce
Samsung's plan involves working with China's YMTC, which should offer a hybrid bonding patent for V10 NAND. ZDNet reports that the South Korean tech company will start making its V10 NAND in large quantities in the second half of 2025, with about 420-430 layers. Besides wafer bonding, Samsung adds other technologies to its NAND plan. The Bell points out that cold etching using molybdenum, and other new ideas will start with 400-layer NAND and play a key part in growing to 1,000 layers. Samsung isn't alone in trying to create ultra-high-layer NAND products. Japan's Kioxia also wants to reach this goal through its "multi-stack CBA" (CMOS Bonded to Array) technology. The company's plan is even bolder hoping to sell 1,000-layer 3D NAND by 2027.
16 Comments on Samsung Aims for 1,000-Layer NAND by 2030, Begins Wafer Bonding at 400 Layers
Admittedly we had a taste of what SSDs should cost, but at the same time, we where getting to a point where it might not have been sustainable long term, but I don't know the exact cost of making NAND, but I believe we were getting close to the point where it was no longer profitable for some companies at least and that's why they cut back on production, just like in any other business.
At the same time, what is a reasonable price? I agree that current pricing isn't very attractive compared to what it was a couple of years ago.
Yeah, benchmark figures have gone up, but most real world tests show that they haven't moved the user experience by any noticeable amount. Optane did, and would even more if they offered competitive transfer speeds, but wasn't worth the effort. So what we basically got are power hungry drives that emit a lot of heat for negligible improvements in application load, install times etc.
And if enterprise demand is so great (for all the AI server needs), why moan about consumer space? Are technologies so far apart those are two different product sectors with completely different solutions that don't transfer?
Can we get an affordable 8 TB SSD? No? We're further from them than we were at the release of first consumer 8 TB drive, Samsung 870 QVO 8 TB 5 years ago! How many extra layers have they crammed into chips, making them smaller and cheaper to make since then?
Stacking the NAND wafers is not making NAND cheaper, as it's a complex and costly process, although TSV (Through Silicon Vias) has made it somewhat more manageable, but due to the difficulty in providing thin enough NAND wafers, there are some serious manufacturing limitations here. Up till now, it's been hard going above 300 layer stacks, which is why we've ended up somewhere around 230-250 tall stacks at the moment. Everyone is trying to make taller stacks, but it doesn't mean they're not working on improving the density per NAND wafer, but it's slow progress on both ends.
16TB M.2 SSDs will soon grace the market — Kioxia unveils 2Tb 3D QLC NAND to build bigger SSDs
Samsung's upcoming 280-layer QLC flash could allow for 16TB M.2 SSDs — claims up to 50% higher storage density than the competition
Samsung is prepping 400-layer V-NAND for future 16TB SSD storage and PCIe 5.0 performance
Glad to see the recent Samsung announcemet not being the case but for the most part this applies more often than not
Check out : www.imec-int.com/en/articles/imec-improves-memory-window-3d-trench-cell-next-gen-nand-flash
This company is talking about high capacity ReRAM at 12 Mbit or 1.5 MByte...
www.ramxeed.com/products/reram/why-reram.html