TrendForce's latest research reveals that the NAND Flash market faced downward pressure in 4Q24 as PC and smartphone manufacturers continued inventory clearance efforts, leading to significant supply chain adjustments. Consequently, NAND Flash prices reversed downward, with ASP dropping 4% QoQ, while overall bit shipments declined by 2%. Total industry revenue fell 6.2% QoQ to US$16.52 billion.

Looking ahead to 1Q25, the traditional slow season effect remains unavoidable despite suppliers actively reducing production. Server and other key end-market inventory restocking has slowed, and with both order volumes and contract prices declining sharply. NAND Flash industry revenue is expected to drop by up to 20% QoQ. However, as production cuts take effect and prices stabilize, the NAND Flash market is expected to recover in the second half of 2025.

Samsung Display announced today its participation in the Mobile World Congress 2025 (MWC25), the world's premier connectivity event. At this influential gathering, Samsung Display will unveil its "OLED Magic" concept, showcasing the future of display technology.

The exhibition will highlight Samsung OLED's superior display quality through innovative form factors, featuring a tribute to the iconic landmarks of Spain, where MWC25 is being held. Attendees will be treated to a unique experience as Samsung OLED captures and expresses the vibrant, distinctive colors of Spain. A highlight of the exhibition will be the Seamless Color Studio, where the exceptional quality of OLED displays can be experienced across a variety of devices. The event will also showcase On-Cell Film (OCF) technology, a cutting-edge advancement in premium display technology.

Samsung's foundry operation has experienced many setbacks over the past six months, according to a steady feed of insider reports. Last November, industry moles leaked details of an apparent abandonment of the company's 3 nm Gate-All-Around (GAA) process. Significant yield problems prompted an alleged shift into 2 nm territories, with a next-gen flagship Exynos mobile processor linked to this cutting-edge node. According to a mid-week Chosun Daily article, Samsung and its main rival—TSMC—are in a race to establish decent yields of 2 nm wafers, ahead of predicted "late 2025" mass production kick-offs. The publication's inside track points to the Taiwanese foundry making the most progress (with an estimated 60%), but watchdogs warn that it is too early to bet against the South Korean competitor.

Despite murmurs of current 20 - 30% yields, the Samsung's Hwaseong facility is touted to make "smooth" progress over the coming months. Chosun's sources believe that Samsung engineers struggled to get 3 nm GAA "up to snuff," spending around three years on development endeavors (in vain). In comparison, the making of 2 nm GAA is reported to be less bumpy. A fully upgraded "S3" foundry line is expected to come online by the fourth quarter of this year. An unnamed insider commented on rumors of better than anticipated forward motion chez Samsung Electronics: "there are positive aspects to this as it has shown technological improvements, such as the recent increase in the yield of its 4 nm process by up to 80%." Recent-ish reports suggest that foundry teams have dealt with budget cuts, as well as mounting pressure from company leadership to hit deadlines.

Samsung Display today revealed plans to exhibit its next-generation OLED technology, boasting an impressive maximum brightness of 5,000 nits, at the Mobile World Congress 2025 (MWC25) on March 3.

The ultra-high brightness OLED was developed based on the polarizer-less display, also known as on-cell film (OCF) technology, which Samsung Display was the first to commercialize. This innovation not only enhances outdoor visibility but also reduces power consumption, paving the way for significant design flexibility. OCF technology is being applied to a bar-type smartphone and a rollable laptop, following its success in foldable smartphones, and is being recognized by customers as a high-value display technology.

TrendForce's latest research reveals that global DRAM industry revenue surpassed US$28 billion in 4Q24, marking a 9.9% QoQ increase. This growth was primarily driven by rising contract prices for server DDR5 and concentrated shipments of HBM, leading to continued revenue expansion for the top three DRAM suppliers.

Most contract prices across applications were seen to have reversed downward. However, increased procurement of high-capacity server DDR5 by major American CSPs helped sustain price momentum for server DRAM.

Samsung aims to create 1,000-layer NAND by 2030 relying on its new "multi-BV" NAND design. The Bell reports that this plan involves stacking four wafers to overcome structural limits. Wafer bonding technology plays a crucial role in this progress and Samsung intends to use it to break the 1,000-layer barrier. Samsung Electronics DS division CTO, Song Jae-hyuk, pointed out that wafer bonding allows separate production of peripheral and cell wafers before joining them into one semiconductor. The Bell says this technology will likely appear first in Samsung's 10th-gen NAND (V10), while industry experts think a single wafer can hold about 500 NAND layers when implementing only cell structures. In the past, Samsung has used the COP (Cell on Peripheral) technique, a method that places the peripheral circuit on one wafer, with NAND cells stacked on top. However, as NAND layers grow, the lower peripheral parts face more pressure potentially affecting reliability.

Samsung's plan involves working with China's YMTC, which should offer a hybrid bonding patent for V10 NAND. ZDNet reports that the South Korean tech company will start making its V10 NAND in large quantities in the second half of 2025, with about 420-430 layers. Besides wafer bonding, Samsung adds other technologies to its NAND plan. The Bell points out that cold etching using molybdenum, and other new ideas will start with 400-layer NAND and play a key part in growing to 1,000 layers. Samsung isn't alone in trying to create ultra-high-layer NAND products. Japan's Kioxia also wants to reach this goal through its "multi-stack CBA" (CMOS Bonded to Array) technology. The company's plan is even bolder hoping to sell 1,000-layer 3D NAND by 2027.

Samsung Electronics America, a world leader in advanced memory technology, today announced the 9100 PRO series solid state drives (SSDs), the newest addition to its consumer SSD lineup. Featuring blazing fast speeds and even more storage capacities, the 9100 PRO and 9100 PRO with Heatsink SSDs are designed to deliver next-gen performance - offering the ultimate storage solution for your digital life.

"From AI-driven creators shaping the future to gamers pushing the limits, we saw a clear need for innovation to support users who need more forward-thinking memory technology as they push the bounds of what's possible in their work," said Jim Kiczek, Vice President of Memory Product Marketing at Samsung Electronics America. "The 9100 PRO SSD establishes a new era of performance to help them achieve exactly that. With more storage, even better speeds, improved power efficiency and seamless reliability, the lineup empowers users to continue innovating without storage limitations."

Although we've been aware of Samsung's 9100 Pro SSD since June last year, it appears that Samsung India got ahead of things and released a press release early about what we can only expect is a soon to launch product. The 9100 Pro is, as you'd expect, a PCIe 5.0 NVMe SSD and it will be available in capacities of 1, 2 and 4 TB initially, but it appears that Samsung is also planning to release an 8 TB SKU, which would be a first for its Pro series of SSDs. Samsung will offer all SKUs with or without a heatsink and the 1 to 4 TB versions will come with an 8.8 mm thick heatsink, whereas the 8 TB model will come with an 11.25 mm thick heatsink.

Sadly, Samsung India only shared the sequential performance figures, and we're looking at read speeds of up to 14,800 MB/s and write speeds of up 13,400 MB/s, neither is sticking out from the competition already available in the market. The pulled press release also mentioned random read performance of 2,200K IOPS and random write performance of 2,600K IOPS. As the press release was intended for the Indian market, we only have pricing in Indian rupees and the 1 TB SKU will sell for 14,999 INR or around US$172, including 18 percent VAT, followed by the 2 TB SKU at 25,499 INR or US$293 and finally 49,999 INR or US$573 for the 4 TB SKU. No pricing was revealed for the upcoming 8 TB SKU.

Intel today showcased how Intel Xeon 6 processors with Efficient-cores (E-cores) have dramatically accelerated time-to-market adoption for the company's solutions in collaboration with the ecosystem. Since product introduction in June 2024, 5G core solution partners have independently validated a 3.2x performance improvement, a 3.8x performance per watt increase and, in collaboration with the Intel Infrastructure Power Manager launched at MWC 2024, a 60% reduction in run-time power consumption.

"As 5G core networks continue to build out using Intel Xeon processors, which are deployed in the vast majority of 5G networks worldwide, infrastructure efficiency, power savings and uncompromised performance are essential criteria for communication service providers (CoSPs). Intel is pleased to announce that our 5G core solution partners have accelerated the adoption of Intel Xeon 6 with E-cores and are immediately passing along these benefits to their customers. In addition, with Intel Infrastructure Power Manager, our partners have a run-time software solution that is showing tremendous progress in reducing server power in CoSP environments on existing and new infrastructure." -Alex Quach, Intel vice president and general manager of Wireline and Core Network Division

The late 2024 news cycle suggested that Samsung's semiconductor business was going through tough times. Alleged yield problems—affecting the 3 nm Gate-All-Around (GAA) process—were highlighted last November. Fast-forward to January 2025; the South Korean megacorp has launched its cutting-edge Galaxy S25 smartphone series. The entire lineup of newly unveiled flagship smartphones contains Qualcomm's Snapdragon 8 Elite mobile chipsets; the Southern Californian chip designer is reportedly pulling in a tidy sum from this partnership. Fresh reports from South Korean news outlets indicate that Samsung System LSI employees have received an "encouraging" email from their boss, regarding current production predicaments.

Businesskorea and Sedaily reports include quotes extracted from the (apparently) leaked internal memo. LSI division president, Park Yong-in, reportedly stated: "we are currently in a situation where we have to develop two flagship products at the same time." Both articles allege that Samsung's semiconductor teams are expected to "cultivate roots and withstand storms." Industry watchdogs believe that the aforementioned "flagship products" are the Exynos 2500 mobile chipset, and Samsung Electronic's next-gen Galaxy S26 smartphone family. Earlier this month, we heard whispers about the much-delayed in-house chip design being readied (with a 2 nm process) for a possible late 2025 launch, inside unannounced Galaxy Z Flip 7 and Fold 7 devices. Park disclosed anticipated incoming obstacles in 2025: "last year's business division profit was higher than expected, but this was a temporary phenomenon...Looking at the entire business division, there will be monthly surpluses and deficits." Last month, inside sources proposed the notion that foundry investments were slashed in half.

Inside sources—familiar with goings-ons at leading DRAM manufacturing firms—have predicted the end of DDR3 and DDR4 production lines. According to a DigiTimes Asia report (citing Nikkei), industry observers have noticed that the DRAM market is undergoing a so-called "shift." They believe that pricing trends are decreasing due to weak demand. Samsung Electronics, SK Hynix, and Micron are named as major players; allegedly involved in devising new strategies—in reaction to fluid market circumstances. The DigiTimes insider network proposes that the big three: "may phase out DDR3 and DDR4 by 2025...by the end of 2025...anticipating a future focused on advanced memory technologies." Older standards are falling out of favor, with DDR5 and high-bandwidth memory (HBM) on the ascent. Industry watchdogs reckon that possible DDR3 and DDR4 supply shortages could occur "post-summer 2025."

Taiwan's Nanya Technology has predicted that the overall DRAM market will "bottom out" within the first half of 2025. An eventual recovery is envisioned by the second quarter; AI-related demands could help drive up demand by a large margin. Additionally, Nanya points to improved inventory management and global economic stimulus. Taiwanese DRAM production houses are expected to pick up some slack, but an unnamed "key component distributor" anticipates serious after-effects. An anonymous source believes that the: "anticipated halt in production could lead to significant supply constraints, challenging market dynamics and impacting pricing strategies." Nanya Technology and Winbond Electronics produce specialized DRAM-types; therefore are not touted to be great gap fillers. The latter is reportedly reacting to weak demand for "mature" DDR products—DigiTimes commented on this development: "Winbond Electronics is advancing its manufacturing by transitioning to a 16 nm process in the latter half of 2025. This upgrade from the current 20 nm process, primarily used for 4 Gb DDR3 and DDR4, will enable Winbond to produce 8 Gb DDR memory."

NVIDIA and its memory partners, SK Hynix, Samsung, and Micron, are preparing a new memory form factor called System on Chip Advanced Memory Module—SOCAMM shortly. This technology, adapting to the now well-known CAMM memory module standard, aims to bring additional memory density to NVIDIA systems. Taking inspiration from NVIDIA's Project DIGITS, it has now been developed independently by NVIDIA outside of any official memory consortium like JEDEC. Utilizing a detachable module design, SOCAMM delivers superior specifications compared to existing solutions, featuring 694 I/O ports (versus LPCAMM's 644 and traditional DRAM's 260), direct LPDDR5X memory substrate integration, and a more compact form factor.

For reference, current-generation Project DIGITS is using NVIDIA GB10 Grace Blackwell Superchip capable of delivering one PetaFLOP of FP4 compute, paired with 128 GB of LPDDR5X memory. This configuration limits the size of AI models that run locally on the device, resulting in up to 200 billion parameter models running on a single Project DIGITS AI PC. Two stacked Project DIGITS PCs are needed for models like Llama 3.1 405B with 405 billion parameters. Most interestingly, memory capacity is the primary limiting factor; hence, NVIDIA devotes its time to developing a more memory-dense SOCAMM standard. Being a replacement compatible with LPDDR5, it can use the same controller silicon IP with only the SoC substrate being modified to fit the new memory. With NVIDIA rumored to enter the consumer PC market this year, we could also see an early implementation in consumer PC products, but the next-generation Project DIGITS is the primary target.

AMD is readying two important client segment processors powered by the next-generation "Zen 6" microarchitecture, according to a sensational new report by Moore's Law is Dead. These are the "Medusa Point" mobile processor, and the "Olympic Ridge" desktop. The former is a BGA roughly the size and Z-Height of the current "Strix Point," but the latter is being designed for the existing Socket AM5, making it the third (and probably final) microarchitecture to do so. If you recall, Socket AM4 served three generations of Zen, not counting the refreshed "Zen+." At the heart of the effort is a new CPU complex die (CCD) that AMD plans to use across its client and server lineup.

The "Zen 6" performance CCD is being designed for a 3 nm-class node, likely the TSMC N3E. This node promises a significant increase in transistor density, power, and clock speed improvements over the current TSMC N4P node being used to build the "Zen 5" CCD. Here's where it gets interesting. The CCD contains twelve full-sized "Zen 6" cores, marking the first increase in core-counts of AMD's performance cores since its very first "Zen" CCD. All 12 of these cores are part of a single CPU core complex (CCX), and share a common L3 cache. There could be a proportionate increase in cache size to 48 MB. AMD is also expected to improve the way the CCDs communicate with the I/O die and among each other.

Back in January, we covered a report about AMD designing its next-generation "Zen 6" CCDs on a 3 nm-class node by TSMC, and developing a new line of server and client I/O dies (cIOD and sIOD). The I/O die is a crucial piece of silicon that contains all the uncore components of the processor, including the memory controllers, the PCIe root complex, and Infinity Fabric interconnects to the CCDs and multi-socket connections. Back then it was reported that these new-generation I/O dies were being designed on the 4 nm silicon fabrication process, which was interpreted as being AMD's favorite 4 nm-class node, the TSMC N4P, on which the company builds everything from its current "Strix Point" mobile processors to the "Zen 5" CCDs. It turns out that AMD has other plans, and is exploring a 4 nm-class node by Samsung.

This node is very likely the Samsung 4LPP, also known as the SF4, which has been in mass-production since 2022. The table below shows how the SF4 compares with TSMC N4P and Intel 4, where it is shown striking a balance between the two. We have also added values for the TSMC N5 node from which the N4P is derived from, and you can see that the SF4 offers comparable transistor density to the N5, and is a significant improvement in transistor density over the TSMC N6, which AMD uses for its current generation of sIOD and cIOD. The new 4 nm node will allow AMD to reduce the TDP of the I/O die, implement a new power management solution, and more importantly, the need for a new I/O die is driven by the need for updated memory controllers that support higher DDR5 speeds and compatibility with new kinds of DIMMs, such as CUDIMMs, RDIMMs with RCDs, etc.

Yesterday's news cycle pointed to Samsung's alleged development of 7000 mAh capacity batteries for the next-gen "Galaxy S26" smartphone series. Additionally, reports suggest that the South Korean megacorporation's Electronics division is experimenting with silicon-carbon battery technology. Industry watchdogs reckon that Chinese manufacturers are market leaders in terms of silicon-carbon battery tech breakthrough, with Apple and Samsung trailing far behind. PandaFlashPro took issue with the latest reports, and dismissed the notion of a so-called "Galaxy S26 Ultra" model featuring a 7000 mAh capacity battery. According to their network of insider sources, Samsung engineers are struggling with their planned improvements.

Typically, flagship Galaxy S phones have utilized 5000 mAh lithium-polymer batteries. PandaFlashPro envisions an underwhelming next-gen upgrade in this department: "I'll delete my X/Twitter account if Samsung gives the 'Galaxy S26 Ultra' a 7000 mAh or even a 6000 mAh battery I bet...based on my five sources, the internal Samsung Test Lab only seem to have a maximum capacity of 5500mAh; not more." The self-proclaimed science and tech enthusiast did not clarify whether the new generation of Galaxy S models will utilize silicon-carbon tech. Industry whispers allege that Samsung is perfecting its "battery formula," thus ensuring that it meets internal standards and expectations.

At the end of January, Samsung Electronics released their financial results for the fourth quarter and the fiscal year 2024. Smartphone tech watchdogs paid close to attention to the South Korean giant's accompanying earnings call. The recently released Galaxy S25 smartphone family is, exclusively, powered by Qualcomm Snapdragon 8 Elite chipsets—insiders believe that Samsung opted out of utilizing proprietary chip designs (for this generation) due to missed production goals. Late last year, inside sources pointed to the foundry's allegedly problematic 3 nm Gate-All-Around (GAA) process node. Follow-up reports suggest that Samsung engineers have moved onto developing a 2 nm manufacturing process, possibly linked to a re-designed Exynos 2500 flagship mobile processor.

Brian Ma, a technology industry analyst, extracted relevant information from Samsung's recent earnings meeting—several press outlets have picked up on his brief social media post. The IDC employee stated: "Samsung System LSI just mentioned in its earnings call that it's optimizing Exynos 2500 and 'aiming' to secure design wins for mobile models scheduled for release in 2H" The rumor mill has proposed that new "Galaxy Z Flip 7 and Fold 7" smartphone models are currently in the development pipeline—coincidental timing indicates that the two devices could launch later in 2025, potentially with next-gen flagship Exynos SoCs onboard. Tipsters reckon that the Exynos 2500 is configured with a 10-core cluster, and its integrated graphics solution will be an AMD RDNA 3.5-enabled Xclipse 950 model.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2024. The Company posted KRW 75.8 trillion in consolidated revenue and KRW 6.5 trillion in operating profit in the quarter ended December 31, 2024. For the full year, it reported KRW 300.9 trillion in annual revenue and KRW 32.7 trillion in operating profit.

Although fourth quarter revenue and operating profit decreased on a quarter-on-quarter (QoQ) basis, annual revenue reached the second-highest on record, surpassed only in 2022. Meanwhile, operating profit was down KRW 2.7 trillion QoQ, due to soft market conditions especially for IT products, and an increase in expenditures including R&D. In the first quarter of 2025, while overall earnings improvement may be limited due to weakness in the semiconductors business, the Company aims to pursue growth through increased sales of smartphones with differentiated AI experiences, as well as premium products in the Device eXperience (DX) Division.

Last week, Samsung introduced its brand-new Galaxy S25 smartphone series—press material focused largely on various implementations of AI features, but industry watchdogs noted the crucial selection of Qualcomm-designed processors. A "first-of-its-kind customized Snapdragon 8 Elite Mobile Platform for Galaxy chipset" is the natural choice for this generation of Samsung flagship phones, given that proprietary Exynos designs have reportedly missed the mark (yet again). Samik Chatterjee—a J.P. Morgan analyst—believes that the latest collaboration will swell Qualcomm's revenues; he predicts a gain of $2 billion (USD). Snapdragon 8 Elite processors are utilized by the entire range of globally-released Galaxy S25 models.

The previous-gen S24 series featured a mix of Qualcomm-designed chips and Samsung Exynos silicon (for different regional markets)—market analysis estimates a total of 40 million unit shipments back in 2024. Previously, Qualcomm had a 70% share of Galaxy S24 chipsets—fast-forwarding to the present day, it becomes 100% with the rollout of Galaxy S25. Late last year, press outlets posited that the South Korean company's foundry division had moved on from a "problematic" 3 nm Gate-All-Around (GAA) process. Samsung's flagship-tier Exynos 2500 SoC was linked to this node, but insiders reckon that alternative external production avenues were explored—most notably with an arch-rival: TSMC. Industry moles reckon that Samsung's leadership has slashed foundry budgets for 2025—reports from last week suggest investments being halved, as teams move onto two nanometer processes.

Samsung Electronics Co., Ltd. today announced the Galaxy S25 Ultra, Galaxy S25+, and Galaxy S25, setting a new standard towards a true AI companion with our most natural and context-aware mobile experiences ever created. Introducing multimodal AI agents, the Galaxy S25 series is the first step in Samsung's vision to change the way users interact with their phone—and with their world. A first-of-its-kind customized Snapdragon 8 Elite Mobile Platform for Galaxy chipset delivers greater on-device processing power for Galaxy AI plus superior camera range and control with Galaxy's next-gen ProVisual Engine.

"The greatest innovations are a reflection of their users, which is why we evolved Galaxy AI to help everyone interact with their devices more naturally and effortlessly while trusting that their privacy is secured," said TM Roh, President and Head of Mobile eXperience Business at Samsung Electronics. "Galaxy S25 series opens the door to an AI-integrated OS that fundamentally shifts how we use technology and how we live our lives."

Reports from last November suggested that Samsung Electronics had semi-abandoned its second-generation 3 nm Gate-All-Around (GAA) process, due to missed production goals. Disappointing production yields—as low as 20%—have been floated by industry insiders, they believed (at the time) that the South Korean's foundry teams had simply moved onto developing a next-gen 2 nm manufacturing process. A freshly published news article, courtesy of Business Korea, provides further evidence of a shift to 2 nanometer processes—Samsung's S3 plant in Hwaseong is reportedly in the process of being upgraded (from 3 nm GAA). Insiders believe that new equipment will be installed across the existing production line, requiring a small-scale investment of funds.

The Pyeongtaek 2 (P2) plant is supposedly being prepared for a 1.4 nm test line—targeting a manufacturing capacity of 2000 to 3000 wafers per month. Inside track information suggests that trials will begin within the year. Business Korea's report suggests that Samsung has halved its foundry facility investment budget for 2025—around 5 trillion won, instead of last year's 10 trillion won. The article puts a spotlight on alleged "sluggish customer orders"—the primary factor behind Samsung's decision to slash its chip-making budget by 50%. Competition is fierce at this point in time—TSMC leads the way with its cutting-edge technologies. Taiwan's premier foundry has attracted many high-profile clients away from rival manufacturers. In contrast, industry watchdogs believe that Samsung's struggles have caused "big tech" customers to seek alternate channels.

Blue Cheetah Analog Design today announced the successful tape-outs of its next generation BlueLynx die-to-die (D2D) PHY on Samsung Foundry's SF4X 4 nm advanced manufacturing process. The latest PHY supports both advanced and standard chiplet packaging with an aggregate throughput exceeding 100 Tbps while achieving industry-leading silicon area footprint and power consumption. BlueLynx D2D subsystem IP enables chip architects to meet the bandwidth density and environmental robustness necessary to ensure production deployment success while preserving use case flexibility.

Using Samsung Foundry's SF4X 4 nm advanced process, the latest BlueLynx PHY supports both standard 2D and advanced 2.5D packages and enables system designers to seamlessly change packaging technologies in current and future implementations. Customer deliveries started in 2024 with silicon characterization in both advanced and standard packaging applications expected in early Q2 2025.

Samsung Electronics today announced a partnership with game developers Nexon Korea and Neople to deliver unparalleled 3D experiences in the upcoming game 'The First Berserker: Khazan.' The game's 3D elements are being specially customized and designed during development, utilizing Samsung technology and the advanced capabilities of the Odyssey 3D monitor to create an immersive 3D gaming experience.

Through this partnership, Nexon, Neople and Samsung have been working closely to tailor the 3D visuals, carefully adjusting them based on the composition of characters, backgrounds and cinematics throughout the game. This process gives the developers an unprecedented level of control over the 3D effects, enabling them to bring their creative visions to life with precision.

Samsung's native foundry operations have wrestled with the 3 nm Gate-All-Around (GAA) process—these problems have persisted since the first reports of "missed production targets" emerged late last year—online speculators floated a very disappointing yield figure: only 20%. Last December, industry moles proposed that the South Korean technology giant had devised plans to form an Exynos-centric "multi-channel partnership" with rival chipmakers. Speculation pointed to TSMC being the only valid ally. Semiconductor industry tipster—Jukanlosreve—believes that negotiations have taken place, and the answer was a firm "no." TSMC's most advanced node process order books are likely filled up with more important customers—industry watchdogs reckon that Apple usually gets first dibs.

Taiwan's top semiconductor manufacturer leads the market with its cutting-edge lithography techniques. Insiders believe that Samsung was impressed by TSMC's 2 nm trial production runs achieving (rumored) 60% yields. The higher-end Exynos chipsets are normally produced with the best node process available, but missed manufacturing goals have caused Samsung to drop in-house tech. In the recent past, Qualcomm's most powerful Snapdragon mobile chipsets have been deployed on flagship Galaxy S smartphones. Jukanlosreve believes that TSMC rejected Samsung's proposed Exynos deal due to a fear of revealing too many "trade secrets." Potentially, the South Koreans could have learned a thing or two about improving yields—courtesy of TSMC's expert knowledge.

Samsung Display will begin mass production of the world's first rollable OLED screen for laptops starting in April 2025. Samsung Display announced its rollable screen for the Lenovo ThinkBook Plus G6 Rollable laptop at CES 2025 in Las Vegas, Nevada, U.S., Lenovo also showcased the laptop and announced its plans to globally launch in June.

The ThinkBook Plus G6 Rollable laptop features a screen underneath the keypad, where the screen expands vertically by almost 50%, offering a unique mobile computing experience. When rolled in, the screen supports a 5:4 aspect ratio on a 14-inch display. When rolled out, the aspect ratio shifts to 8:9 on a 16.7-inch display, providing an enhanced view for efficient multitasking.

Samsung has revealed two new laptop models at CES 2025: the Galaxy Book5 Pro and Galaxy Book5 360, both featuring Intel's latest processors and artificial intelligence capabilities. The Galaxy Book5 Pro comes in two sizes. The 16-inch version weighs 1.56 kg and includes a 76.1Wh battery, while the 14-inch model weighs 1.23 kg with a 63.1 Wh battery. Both laptops use AMOLED displays with 2880×1800 resolution and variable refresh rates from 48 to 120 Hz. Storage options reach 1 TB, with either 16 GB or 32 GB of memory available.

The Galaxy Book5 360 features a 15.6-inch touchscreen that can fold back 360 degrees, effectively turning the laptop into a tablet. It has a 1920×1080 resolution display and weighs 1.46 kg, with a 68.1 Wh battery. Both models use Intel's Core Ultra processors with built-in NPUs that Samsung uses for features like AI Select for searching and Photo Remaster for image enhancement. The laptops also integrate with other Samsung devices through features like Multi Control for unified device navigation and Quick Share for file transfers. The new laptops include standard connectivity options like Wi-Fi 7 and Bluetooth 5.4. Samsung claims the Pro models can achieve up to 25 hours of battery life, though real-world usage typically yields shorter durations.