This week, at the 2024 IEEE International Electron Devices Meeting (IEDM), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, proposes a novel 3D integrated charge-coupled device (CCD) that can operate as a block-addressable buffer memory, in support of data-intensive compute applications. Memory operation is demonstrated on a planar proof-of-concept CCD structure which can store 142 bits. Implementing an oxide semiconductor channel material (such as IGZO) ensures sufficiently long retention time and enables 3D integration in a cost-efficient, 3D NAND-like architecture. Imec expects the 3D CCD memory density to scale far beyond the DRAM limit.

The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement DRAM in data-intensive compute applications like AI and ML. One example is the CXL type-3 buffer memory, envisioned as an off-chip pool of memories that 'feeds' the various processor cores with large data blocks via a high-bandwidth CXL switch. This class of memories meets different specifications than byte-addressable DRAM, which increasingly struggles to maintain the cost-per-bit-trend scaling line.

Chinese semiconductor memory giant YMTC is reportedly manufacturing anywhere between 400-500,000 wafers per year of leading-edge NAND memory, all on domestically produced wafers. According to Mayuki Hashimoto, CEO and Chairman of SUMCO, a Japanese company supplying raw silicon ingots and polished wafers, they are seeing a significant business impact stemming from China's growing self-reliance, especially with companies like YMTC producing its own silicon ingots and polished wafers. This has led to SUMCO's decreasing revenue, where the CEO shared some insights about Chinese ambitions. He added that China is producing about one million wafers of silicon per year, most of which are test wafers. This includes test runs from companies like SMIC and its customers, such as T-Head, HiSilicon, and others.

Last year, YMTC, with its Xtacking 4.0 3D NAND flash architecture, was the first company to achieve a 200+ layer count in the 3D NAND space. The company's product, X4-9070, a 232-layer TLC 3D NAND, uses multiple silicon wafers, hence growing its massive consumption of silicon that is projected to reach 500,000 wafers per year. Given that this is all homegrown silicon from ingots to NAND, this is a massive success for Chinese self-reliance efforts but a huge blow to companies that used to supply Chinese firms with raw materials. Although the company uses custom silicon, it still relies on foreign tools, photoresists, and pre-cursors. There are some indications that YMTC is developing its own tools; it is a plan of a broader strategy in the Chinese semiconductor industry to develop every step of the semiconductor manufacturing process. Huawei is also there to develop EUV scanners, and YMTC could help with its memory business, which is in need of a new tool.

Transcend Information Inc. (Transcend ), a leading global manufacturer of memory storage solutions, announces the launch of its new CFX735 and CFX735I CFast cards. These cards feature built-in write protection technology, designed specifically for professional applications that require secure data storage and stable, high-performance write capabilities.

Leveraging 112-layer 3D NAND flash technology and a SATA III 6 Gb/s interface, this series offers exceptional read/write speeds and large storage capacities. Whether you're dealing with data-intensive applications or operating in demanding environments, these cards deliver reliable performance. The CFX735 operates in a temperature range of -5°C to 70°C, while the CFX735I is built for extreme environments, functioning reliably from -40°C to 85°C, perfect for outdoor and temperature fluctuating scenarios.

ADATA has launched the Legend 860 M.2 NVMe Gen 4 SSD series, aimed at mid-range users seeking a fast and reliable storage solution for PCs, laptops, or PS5 devices. Utilizing the PCIe Gen 4 x4 interface, the Legend 860 delivers sequential read and write speeds of up to 6,000 MB/s and 5,000 MB/s, respectively—three times faster than standard PCIe Gen 3 SSDs and ten times faster than SATA SSDs.

The lineup consists of three models with capacities of 500 GB, 1 TB, and 2 TB, each equipped with a slim aluminium heatsink. The ADATA Legend 860 utilizes 3D NAND flash chips and incorporates an SLC cache algorithm, HMB (Host Memory Buffer) technology, and an LDPC (Low-Density Parity Check) error correction mechanism, providing up to 640 TB TBW (Terabytes Written). ADATA offers a 5-year limited warranty, though pricing has not yet been disclosed.

GIGABYTE silently introduced the AI TOP UD 1 TB SSD, a new M.2 2280 form factor model to its AI Ultra Durable series dedicated to very intensive workloads, such as AI training. GIGABYTE's AI TOP UD SSD uses PCIe 4.0, so it's not going to break any speed records against drives using PCIe 5.0. It supports the NVMe 1.4 protocol, has a 5-year limited warranty, and is currently only available in 1 TB capacity. The product has a nominal TBW of 109,500 TB, equivalent to 60 DWPD, or 60 full disk writes per day. GIGABYTE doesn't reveal what kind of 3D NAND flash it utilizes to achieve such endurance levels.

The company has previously launched a product with a similar purpose to the AI TOP 100E SSD. In comparison, the new AI TOP UD SSD has slightly lower read/write performances (6500 MB/s vs 7200 MB/s sequential read, 5700 MB/s vs 6500 MB/s sequential write) and lower MTBF (1.5 vs 1.6 million hours). Additionally, while the AI TOP 100E SSD mentions that it is equipped with 1 GB external cache, the AI TOP UD SSD specification sheet does not mention anything. Regarding operating power, the 1 TB AI TOP UD SSD uses 6.2 W (Read) and 6.5 W (Write), while the previous AI TOP 100E SSD model's power consumption levels are between 10.8 W and 11.0 W. This means that the AI TOP UD SSD has lower requirements for heat dissipation, a crucial advantage in crowded high-performance servers where thermal management is a major concern. The company only recently listed the SSD, so pricing and availability are unknown.

Patriot Memory, a leading manufacturer of high-performance gaming memory modules, SSDs, flash memory, and gaming peripherals, today announced the launch of its latest innovation under the Viper Gaming brand: the Viper PV573 PCIeGen5 x4 M.2 2280 SSD. This product reinforces Patriot's leadership in cutting-edge technology, pushing speed boundaries beyond its predecessor, the PV553.

The Viper PV573 SSD utilizes advanced 3D NAND vertical stacking technology, significantly enhancing storage density while reducing power consumption and delivering faster read and write speeds. This innovation also improves durability, making it a reliable choice for users with demanding storage needs. With capacity options of up to 4 TB, the Viper PV573combines powerful performance in a compact, portable form factor, achieving the perfect balance of high capacity and efficiency within a small footprint.

Greenliant is now sampling high-endurance EnduroSLC NVMe M.2 2242 and 2280 ArmourDrive EX Series solid state drives (SSDs), providing 75,000 and 150,000 program-erase (P/E) cycles. Operating between -40 and +95 degrees Celsius, NVMe M.2 ArmourDrive EX Series SSDs offer high reliability and long-term support required by leading customers in aerospace and defense, industrial, transportation and networking.

Greenliant is also sampling upgraded NVMe M.2 2242 / 2280 ArmourDrive PX Series SSDs with high-quality industrial 3-bit-per-cell (TLC) 3D NAND that support 5,000 P/E cycles. Optimized for high performance and low power consumption, both EX and PX series products provide the convenience of removability. Offered from popular 2280 (GLS88AS) to small 2242 (GLS88CS) form factors and available in a wide range of capacities, these single-sided, thin-profile SSDs are ideal for space-constrained designs.

KLEVV, the premier consumer memory and storage brand introduced by Essencore, is keen to unveil the all-new GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD and CRAS C715 PCIe Gen3x4 NVMe M.2 SSD. Strategically named for its raw, unrivaled performance, the GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD offers top-of-the-line hardware and cutting-edge storage technology packed into a highly refined product.

As KLEVV's first-ever PCIe Gen 5 SSD, it boasts exceptional speeds with sequential read and write capabilities of up to 14,000 MB/s and 12,000 MB/s, respectively. Alongside an impressive 4K random IOPS of up to 1,400K, the GENUINE G560 sets a new standard in advanced storage solutions. Engineered with a revolutionary 23x-layer 3D NAND, the GENUINE G560 delivers unparalleled efficiency and reliability, ideal for professional gamers, content creators, and casual use.

Transcend Information Inc. (Transcend), a global leader in industrial memory storage, is proud to announce its first industrial-grade PCIe M.2 22110 SSD, the MTE730P. This SSD features Power Loss Protection (PLP) technology, ensuring robust data integrity even in the most demanding environments. With PCIe Gen 4 performance and capacities of up to 4 TB, the MTE730P meets the needs of high-end industrial automation, blade servers, data centers, and other modern storage applications.

Power Loss Protection: Create Higher Data Integrity
The MTE730P's Power Loss Protection (PLP) technology is a critical feature for applications such as automated manufacturing, medical systems, transportation systems, and financial transaction. It ensures that the built-in tantalum capacitors provide power to the controller and DRAM cache during power fluctuations or outages, guaranteeing maximum data integrity and security.

Micron Technology, Inc., today announced the availability of the Crucial P310 2280 Gen 4 NVMe solid-state drive (SSD), which offers two times faster performance than Gen 3 SSDs and 40% faster performance than Crucial's P3 Plus, giving gamers, students and creatives a boost in speed when they boot and use data-intensive applications. With capacities up to 2 terabytes (TB) and read and write speeds of 7,100 and 6,000 megabytes per second (MB/s) respectively, the P310 2280 SSD enables more customers than ever to gain access to gaming performance without paying gaming prices. This launch expands Micron's P310 portfolio to address PCs, laptops and PlayStation 5, closely following the July launch of its award-winning Crucial P310 2230 SSD, which is targeted at users of handheld gaming consoles and mini PCs.

"Micron's Crucial P310 2280 SSD delivers blazing fast gaming-level speeds, allowing users to do it all faster — from gaming to booting Windows to running multiple creative apps at the same time — without compromising on quality," said Jonathan Weech, senior director of product marketing for Micron's Commercial Products Group. "Architected with our advanced 3D NAND technology and optimized to deliver the utmost power efficiency, the 2280 SSD empowers everyone from gamers to creatives to squeeze more out of their battery life when using data-rich apps."

Polish computer memory brand Goodram is launching a new external SSD called the HX200. Thanks to its parameters, the drive will interest a wide range of users, from mobile professionals to gadget lovers and those who store gigabytes of data in the form of photos, videos and documents.

With its unique colour, the drive will appeal to female users who appreciate style and elegance in their daily use of technology. The launch of the HX200 is manufacturer's next step towards providing innovative solutions combining functionality and aesthetics.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the development of its 3D X-AI chip technology, targeted to replace the current DRAM chips inside high bandwidth memory (HBM) to solve data bus bottlenecks by enabling AI processing in 3D DRAM. 3D X-AI can reduce the huge amount of data transferred between HBM and GPUs during AI workloads. NEO's innovation is set to revolutionize the performance, power consumption, and cost of AI Chips for AI applications like generative AI.

AI Chips with NEO's 3D X-AI technology can achieve:

• 100X Performance Acceleration: contains 8,000 neuron circuits to perform AI processing in 3D memory.
• 99% Power Reduction: minimizes the requirement of transferring data to the GPU for calculation, reducing power consumption and heat generation by the data bus.
• 8X Memory Density: contains 300 memory layers, allowing HBM to store larger AI models.

Kingston's NV2 NVMe SSD has been a popular budget choice that has offered some of the best price/performance ratio in its segment of the market. Now, Kingston has quietly added its replacement, the NV3 to its website and that entails a wide range of upgrades over the NV2. The Kingston NV2 came in a range of different variations with multiple different controllers and NAND types and so far the company hasn't revealed which controller or what NAND the NV3 will feature. However, the company lists 3D NAND with a sequential read speeds of 6,000 MB/s for the 1 TB and up SKUs which is a huge improvement over the NV2 which topped out at 3,500 MB/s. Write speeds top out at 5,000 MB/s, but this is limited to the 2 and 4 TB SKUs, but it's nearly twice that of the 2 TB NV2 SKU. The 1 TB SKU is also seeing almost a doubling in terms of write speeds over the NV2. The 500 GB SKU is seeing more modest performance improvements, but it's still getting a decent performance uplift.

Initially, Kingston will launch 500 GB, 1 TB and 2 TB SKUs, with the 4 TB SKU following in Q4 this year. Endurance remains the same as for the NV2, with the NV3 starting out at 160 TBW for the 500 GB SKU, which then doubles for each increase in size and tops out at 1280 TBW for the 4 TB SKU. Kingston has as yet to officially announce the drive, but some online retailers claim to be able to ship the NV3 in four to five days time, suggesting that the launch is imminent. Pricing appears to start at US$50 for the 500 GB SKU, which increases to US$70 for the 1 TB SKU, with the 2 TB SKU jumping to US$139 from the same retailer. This places the NV3 slightly higher than the current retail price of the NV2, which is hardly a surprise, considering it delivers better performance. All SKUs come with a three year warranty.

SK hynix is reportedly developing 400-layer NAND flash memory, with plans to begin mass production by late 2025. The company is collaborating with supply chain partners to develop the necessary process technologies and equipment for 400-layer and higher NAND chips. This information comes from a recent article by Korean media outlet etnews citing industry sources.

SK hynix intends to use hybrid bonding technology to achieve this, which is expected to bring new packaging materials and components suppliers into the supply chain. The development process involves exploring new bonding materials and various technologies for connecting different wafers, including polishing, etching, deposition, and wiring. SK hynix aims to have the technology and infrastructure ready by the end of next year.

Lam Research Corp. today extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo 3.0, the third generation of the company's production-proven cryogenic dielectric etch technology. As the proliferation of generative artificial intelligence (AI) continues to propel the demand for memory with higher capacity and performance, Lam Cryo 3.0 provides etch capabilities critical for the manufacturing of future leading-edge 3D NAND. Leveraging ultra cold temperatures, high power confined plasma reactor technology, and innovations in surface chemistry, Lam Cryo 3.0 etches with industry-leading precision and profile control.

"Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND," said Sesha Varadarajan, senior vice president of Global Products Group at Lam Research. "With five million wafers already manufactured using Lam cryogenic etch, our newest technology is a breakthrough in 3D NAND production. It creates high aspect ratio (HAR) features with angstrom-level precision, while delivering lower environmental impact and more than double the etch rate of conventional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome the AI era's key NAND manufacturing hurdles."

Chinese memory manufacturer YMTC has filed a lawsuit against U.S.-based Micron in California, alleging infringement of 11 patents related to 3D NAND Flash and DRAM products. YMTC seeks to halt Micron's sales of the allegedly infringing products in the U.S. and demands royalty payments. Founded in Wuhan, China, in 2016, YMTC is a key player in China's efforts to develop a domestic chip industry. However, in October 2022, the U.S. government placed YMTC on its Entity List, restricting its access to advanced U.S. manufacturing equipment for 3D NAND chips with 128 layers or more.

Before these restrictions, YMTC had obtained certification from Apple for its 128-layer 3D NAND chips, with the US tech giant considering using YMTC chips to reduce costs and diversify its supply chain beyond Samsung, SK Hynix and Micron. The lawsuit specifically targets Micron's 3D NAND Flash products with 96, 128, 176, and 232 layers, as well as certain DDR5 SDRAM products. This legal action follows a similar suit filed by YMTC against Micron in November, alleging infringement of eight U.S. patents related to 3D NAND Flash. With government backing, Chinese firms are increasingly engaging in patent litigation both domestically and internationally. Last year alone, Chinese courts handled over 5,000 technical intellectual property and monopoly cases.

Samsung has introduced its latest BM1743 SSD, boasting an impressive 61.44 TB of storage capacity. The BM1743 utilizes Samsung's seventh-generation 3D NAND (V-NAND) technology, featuring 176 layers of memory cells. This represents a significant leap from its predecessor, the BM1733, which debuted in 2020 with 96-layer technology and a maximum capacity of 32 TB. Performance-wise, the BM1743 doesn't disappoint. It delivers up to 1.6 million random read IOPS and 110,000 random write IOPS, with sequential read and write speeds of 7.2 GB/s and 2.0 GB/s, respectively. These figures position the drive as a highly capable solution for read-intensive workloads. Samsung claims that the new SSD offers double the sequential read and write speeds of its fifth-generation technology, with random reads quadrupling in performance. This advancement suggests that quad-level cell (QLC) SSDs are now approaching the performance levels of their triple-level cell (TLC) counterparts while offering superior storage density.

The BM1743 is available in the traditional U.2 form factor, with an E3.S variant supporting PCIe Gen 5 also in the lineup, thanks to the custom Samsung controller. Samsung has enhanced the durability and data retention capabilities of the BM1743. The new drive boasts an improved endurance rating of 0.26 drive writes per day (DWPD) throughout its warranty period, a notable increase from the BM1733's 0.18 DWPD. Additionally, the BM1743 extends its power-off data retention to three months, tripling the one-month period of its predecessor. In a hint of things to come, Samsung has suggested that a 122.88 TB model may be on the horizon, potentially doubling the capacity of the BM1743. This new offering puts Samsung in direct competition with Solidigm's D5-P5336, which has dominated the high-capacity SSD market for the past year. High-density storage solutions are becoming more important as AI and HPC tasks require and produce massive amounts of data.

Kioxia presented a technology roadmap at the IWM 2024 conference in Seoul, projecting the development of 1,000-layer 3D NAND by 2027. This ambitious goal is based on extrapolating past trends, which saw NAND layers increase from 24 in 2014 to 238 in 2022. Kioxia's plan involves not only increasing layer count but also shrinking cell size and increasing bit levels from TLC (3 bits per cell) to QLC (4 bits per cell), and possibly even to PLC (5 bits per cell).

However, these advancements come with significant technical challenges. Etching the vertical connecting holes (through-silicon vias or TSVs) are harder to achieve and can lead to higher channel resistance. Kioxia proposes solutions such as using single-crystalline silicon instead of polysilicon and switching from tungsten to molybdenum to reduce resistance. They also suggest moving to multi-lane wordlines to reduce the die area needed for electrical connectivity.

Gigabyte has quietly added a new SSD to its growing lineup and this time around it's something quite different. The drive is part of Gigabyte's new AI TOP (Trillions of Operations per Second) and was announced at Computex with little fanfare. At the show, the company only announced that it would have 150x the TBW compared to regular SSDs and that it was built specifically for AI model training. What that 150x means in reality is that the 2 TB version of the AI TOP 100E SSD will deliver no less than 219,000 TBW (TeraBytes Written), whereas most high-end 2 TB consumer NVMe SSDs end up somewhere around 1,200 TBW. The 1 TB version promises 109,500 TBW and both drives have an MTBF time of 1.6 million hours and a five-year warranty.

Gigabyte didn't reveal the host controller or the exact NAND used, but the drives are said to use 3D NAND flash and both drives have a LPDDR4 DRAM cache of 1 or 2 GB depending on the drive size. However, the pictures of the drive suggest it might be a Phison based reference design. The AI TOP 100E SSDs are standard PCIe 4.0 drives, so the sequential read speed tops out at 7,200 MB/s with the write speed for the 1 TB SKU being up to 6,500 MB/s, with the 2 TB SKU slightly behind at 5,900 MB/s. No other performance figures were provided. The drives are said to draw up to 11 Watts in use, which seems very high for PCIe 4.0 drives. No word on pricing or availability as yet.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell Mechanism for 3D X-DRAM. Andy Hsu, Founder & CEO presented groundbreaking Technology CAD (TCAD) simulation results for NEO's 3D X-DRAM during the 16th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.

Neo Semiconductor reveals a unique performance boosting mechanism called Back-gate Channel-depth Modulation (BCM) for Floating Body Cell that can increase data retention by 40,000X and sensing window by 20X.

Samsung is preparing to launch its 9th Generation V-NAND (3D NAND flash) memory next month, Korean publication Hankyung reports. The 9th Gen 3D NAND flash memory by Samsung is expected to offer 290 layers, a step-up from the 236-layer 8th Gen V-NAND that the company debuted in 2022. Samsung reportedly achieved the 290-layer vertical stacking density through improvements in its flash layer stacking techniques that relies on increasing the layer counts through more memory holes in the flash layer. The cost here is data density per wafer, but a net gain from the increase in layer counts.

The same source behind the 9th Gen V-NAND story also reports that the company is targeting a rather early 2025 launch for its successor—the 10th Gen V-NAND. This is expected to be a mammoth 430-layer 3D NAND flash, a jump of 140 layers over the 9th Gen (which itself jumped by 54 layers over its predecessor). This would put Samsung back on track along with its competitors, Kioxia, SK Hynix, Micron Technology, and YMTC, as they gun for the ambitious goal of 1000-layer 3D NAND flash by 2030.Many Thanks to TumbleGeorge for the tip.

MSI, a global leader in gaming PC hardware, is thrilled to announce the release of its highly anticipated SSD powerhouse, the SPATIUM M580 FROZR, ushering in a new era of storage performance. With cutting-edge technology and innovative thermal solutions, this SSD is set to redefine the standards of speed and reliability in storage solutions.

SPATIUM M580 FROZR, Reaching New Heights with Crowned Speeds
The SPATIUM M580 FROZR sets a new benchmark in storage performance with its revolutionary features. Powered by the state-of-the-art PHISON E26 PCIe Gen 5 controller and equipped with advanced 3D NAND flash modules boasting 232 layers, this SSD achieves mind-blowing read speeds of up to 14.6 GB/s and write speeds of up to 12.7 GB/s, up to 2 times faster transfer rates compared to current PCIe 4.0 SSDs. This represents a significant leap in speeds, boosted by a DRAM cache buffer and a SLC Cache, providing users with lightning-fast data access and gaining valuable milliseconds in latency for gaming, content creation, and professional applications. Additionally, the M580 FROZR is fortified with LPDC ECC and E2E Data Protection, ensuring data integrity and reliability. With a high TBW (Terabytes Written) value and backed by a comprehensive 5-year warranty, users can trust in the durability and longevity of the SPATIUM M580 FROZR in 1 TB, 2 TB and 4 TB variants after an easy installation.

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today introduced the new generation FerriSSD NVMe PCIe Gen 4 x4 BGA SSD. This latest solution features support for i-temp and integrates advanced IntelligentSeries technology, delivering robust data integrity in extreme temperature environments that meet the rigorous demands of industrial embedded systems and automotive applications.

The latest FerriSSD BGA SSD supports PCIe Gen 4 x4 and uses high density 3D NAND within a compact 16 mm x 20 mm BGA chip-scale package. With storage capacities up to 1 TB, these high-performance embedded SSDs utilize Silicon Motion's latest innovations to achieve high sequential read speeds exceeding 6 GB/s and sequential write speeds exceeding 4 GB/s. Equipped with Silicon Motion's proprietary IntelligentSeries data protection technology that enhances reliability and performance through the use of encryption, data caching, data scanning and protect features, as well as supporting the i-temp requirements of operating in extreme temperatures from -40°C to + 85°C. This latest FerriSSD offers a high performance and highly reliable embedded storage solution for a broad range of applications and operating environments including in-car computing, thin client computing, point-of-sale terminals, multifunction printers, telecommunications equipment, factory automation tools, and a wide range of server applications.

Leaked Samsung PBSSD presentation material popped up online a couple of days prior to the kick-off day of NVIDIA's GTC 2024 conference (March 18)—reports (at the time) jumped on the potential introduction of a "petabyte (PB)-level SSD solution," alongside an enterprise subscription service for the US market. Tom's Hardware took the time to investigate this matter—in-person—on the showroom floor up in San Jose, California. It turns out that interpretations of pre-event information were slightly off—according to on-site investigations: "despite the name, PBSSD is not a petabyte-scale solid-state drive (Samsung's highest-capacity drive can store circa 240 TB), but rather a 'petascale' storage system that can scale-out all-flash storage capacity to petabytes."

Samsung showcased a Supermicro Petascale server design, but a lone unit is nowhere near capable of providing a petabyte of storage—the Tom's Hardware reporter found out that the demonstration model housed: "sixteen 15.36 TB SSDs, so for now the whole 1U unit can only pack up to 245.76 TB of 3D NAND storage (which is pretty far from a petabyte), so four of such units will be needed to store a petabyte of data." Company representatives also had another Supermicro product at their booth: "(an) H13 all-flash petascale system with CXL support that can house eight E3.S SSDs (with) four front-loading E3.S CXL bays for memory expansion."

Apple introduced its new generation of MacBook Air subcompact laptops last week—their press material focused mostly on the "powerful M3 chip" and its more efficient Neural Engine. Storage options were not discussed deeply—you had to dive into the Air M3's configuration page or specification sheet to find out more. Media outlets have highlighted a pleasing upgrade for entry-level models, in the area of internal SSD transfer speeds. Apple has seemingly taken onboard feedback regarding the disappointing performance of its basic MacBook Air M2 model—its 256 GB storage solution houses a lone 3D NAND package. Max Tech's Vadim Yuryev was one of the first media personalities to discover the presence of two NAND flash chips within entry-level MacBook Air M3 systems—his channel's video teardown can be watched below.

The upgrade from a single chip to a twin configuration has granted higher read and write speeds—Yuryev shared Blackmagic SSD speed test results; screengrabs from his video coverage are attached to this article. M3 MacBook Air's 256 GB solution achieved write speeds of 2,108 MB/s, posting 33% faster performance when compared to an equivalent M2 MacBook Air configuration. The M3 model recorded read speeds of 2,880 MB/s—Wccftech was suitably impressed by this achievement: "making it a whopping 82 percent than its direct predecessor, making it quite an impressive result. The commendable part is that Apple does not require customers to upgrade to the 512 GB storage variants of the M3 MacBook Air to witness higher read and write speeds." Performance is still no match when lined up against "off-the-shelf" PCIe 3.0 x4 drives, and tech enthusiasts find the entry price point of $1099 laughable. Apple's lowest rung option nets a 13-inch model that packs non-upgradable 8 GB of RAM and 256 GB of storage. Early impressions have also put a spotlight on worrying thermal issues—Apple's fan-less cooling solution is reportedly struggling to temper their newly launched M3 mobile chipset.