Transcend Information, Inc. (Transcend), a global leader in storage and multimedia solutions, proudly announces the launch of its new SSD475P 2.5" solid-state drive, purpose-built for industrial applications and high-performance environments. Featuring Power Loss Protection (PLP) technology, the SSD475P uses built-in capacitors to continue supplying power during unexpected power outages, ensuring data is properly written and significantly reducing the risk of data loss.

The SSD475P is equipped with a SATA III 6 Gb/s interface and 112-layer 3D NAND flash, offering storage capacities of up to 8 TB, combining high-speed access with exceptional capacity. With sustained read/write speeds of up to 560/530 MB/s and a built-in DRAM cache, the drive enhances random access performance and overall endurance. Thanks to its Direct Write firmware, the SSD475P provides outstanding write stability for prolonged, intensive data workloads. It ensures consistent write speeds without throttling, making it ideal for industrial use cases involving frequent access and high write volumes, such as industrial PCs, embedded systems, and data logging devices.

We were passing by the Transcend booth here at Computex 2025 when our curious eyes and rapid camera spotted the "yet to be announced" Transcend MTE260S M.2 NVMe PCIe Gen 5 SSD. This is the next-generation high-performance M.2 SSDs that are capable of reaching speeds up to 14,000 MB/s (reads) and up to 12,500 MB/s (writes) thanks to its 3D NAND Flash memory, and the Silicon Motion controller (presumably the SM2508 series) aided by a DRAM cache. Other than that, for the moment, we only know that Transcend plans to offer models from 1 TB up to 4 TB capacity with the same graphene heatsink design seen on previous Transcend 2000 M.2 SSD series; the rest of the technical specifications will be known soon once the company makes its official announcement. The product will likely be aimed towards gamers and content creators.

Ahead of next week's Computex 2025 show, Taiwanese hardware manufacturer addlink is teasing some of its upcoming products. We've learned that they plan to release new PCIe Gen 5 x4 NVMe 2.0 SSDs. The addlink G57 (without heatsink) and G57H (with heatsink) M.2 2280 models are presented as capable of delivering speeds of 14,000 MB/s for both read and write operations, thanks to a new 6 nm PCIe Gen 5 controller. The series consists of 1 TB, 2 TB, and 4 TB models, and we can speculate that the advertised 14,000 MB/s speeds will likely be available only on the 4 TB variant (following the current trend with other manufacturers). These devices use 3D NAND Flash memory and LPDDR4 (for DRAM cache), featuring LDPC ECC, SLC Cache, SMART and TRIM support, and thermal control. The products will be backed by a 5-year limited warranty. Beyond these details, we'll have to wait a few more days for TechPowerUp team to visit addlink's booth at Computex for more technical information.

addlink will also showcase at Computex 2025, alongside the aforementioned products, a wide range of storage and memory devices including various SSDs, USB drives, and DDR5 memory modules with speeds up to 8,400 MB/s (CUDIMM) and 6,400 MB/s (UDIMM). Those who can't wait until Computex can explore these products on addlink's virtual showcase. We're seeing a welcome trend with the latest and upcoming PCIe Gen 5 NAND Flash storage devices for consumers in terms of performance levels, with the bar being raised to 14,000 MB/s or even higher. Just today, Sandisk launched its highly anticipated WD_BLACK SN8100 NVMe internal SSD, capable of delivering speeds up to 14,900 MB/s and capacities up to 8 TB. Earlier this week, Kingston released the FURY Renegade G5 with speeds up to 14,800/14,000 MB/s read/write and over 2 million IOPS.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the latest advancement in its groundbreaking 3D X-DRAM technology family—the industry-first 1T1C- and 3T0C-based 3D X-DRAM cell, a transformative solution designed to deliver unprecedented density, power efficiency, and scalability for the most demanding data applications.

Built on a 3D NAND-like architecture and with proof-of-concept test chips expected in 2026, the new 1T1C and 3T0C designs combine the performance of DRAM with the manufacturability of NAND, enabling cost-effective, high-yield production with densities up to 512 Gb—a 10x improvement over conventional DRAM.
"With the introduction of the 1T1C and 3T0C 3D X-DRAM, we are redefining what's possible in memory technology," said Andy Hsu, Founder & CEO of NEO Semiconductor. "This innovation pushes past the scaling limitations of today's DRAM and positions NEO as a frontrunner in next-generation memory."

Global semiconductor materials market revenue increased 3.8% to $67.5 billion in 2024, SEMI, the global industry association representing the electronics design and manufacturing supply chain, reported today in its Materials Market Data Subscription (MMDS). The recovery of the overall semiconductor market as well as the increasing demand for advanced materials for high-performance compute and high-bandwidth memory manufacturing supported 2024 materials revenue growth.

Wafer fabrication materials revenue increased 3.3% to $42.9 billion in 2024, while packaging materials revenue grew 4.7% to $24.6 billion last year. The chemical mechanical planarization (CMP), photoresist, and photoresist ancillaries segments experienced strong double-digit growth driven by increased complexity and number of processing steps required for advanced DRAM, 3D NAND flash and leading-edge logic integrated circuits (ICs). All semiconductor materials segments, except for silicon and silicon-on-insulator (SOI), registered year-on-year increases. The demand for silicon, particularly in the trailing edge segment, remained weak in 2024 as the industry continued to work through excess inventory, resulting in a 7.1% decline in silicon revenue in 2024.

Last November, Western Digital introduced its WD_BLACK SN7100 NVMe SSD series—advertised as utilizing their: "latest TLC 3D NAND." This new SSD design offers: "speeds up to 7,250 MB/s read and 6,900 MB/s write (for 1 and 2 TB models), providing up to a 35% performance boost over our previous generation SSD." The manufacturer's official press material did not explicitly state that the SN7100 would serve as a natural replacement for their well-regarded SN770 (2022) product family, but W1zzard's recent glowing review (of the 2 TB variant) refers back to the forebear on multiple occasions.

As low-key teased by last November's press announcement, a 4 TB WD_BLACK SN7100 model is arriving in 2025—freshly updated listings indicate an imminent launch at retail/e-tail. Interestingly, WD's SN770 range never reached beyond a 2 TB barrier. Search engine results—when inputting the "WDS400T4X0E-00CJA0" identifier—point to a "March 2025" SN7100 series data sheet, and SanDisk's UK store accepting pre-orders for £255.99 (~$332 USD). Availability status is currently designated as: "within 1 week." Western Digital's spec comparison table (see below) proudly showcases the 4 TB variant's impressive endurance (TBW) credential: 2400. Its lower capacity siblings (1 TB and 2 TB) hold slight advantages in terms of read and write speeds. TechPowerUp's resident SSD reviewer deemed the SN7100 2 TB model worthy of an "Editor's Choice" badge, but wished for a larger capacity option. We hope that a 4 TB evaluation sample will make its way to W1zz HQ in the near future.

Kingston has introduced its new DC3000ME line of enterprise-grade PCIe 5.0 SSDs. These top-tier storage devices come in a U.2 15 mm form factor (100.50 mm × 69.8 mm × 14.8 mm) and use 3D eTLC NAND flash memory. The drives include built-in power loss protection and AES 256-bit hardware-based encryption. Kingston DC3000ME SSDs are designed for server applications such as AI, HPC, OLTP, databases, cloud infrastructure, and edge computing. As an enterprise-grade product, the DC3000ME SSDs also feature various built-in telemetry such as media wear, temperature, health, etc.

At this moment, they are offered in three sizes: 3.84 TB, 7.68 TB, and 15.36 TB. Each version has 1DWPD durability with a 5-year warranty. In terms of power consumption, we have 8 W when idle and up to 24 W during writing operations. Kingston points out the drives' steady I/O performance and quick response times, with read delays under 10µs at 99% and write delays under 70µs. (up to 14,000/10,000 MB/s sequential read/write and up to 2,800,000/500,000 4k random read/write IOPS). The drives also have NVMe-MI 1.2b remote management, end-to-end data safety, and support for TCG Opal 2.0. Exact pricing is still to be announced, however we found them online at €686,9 (3.84 TB), €1226,9 (7.68 TB), €2252,9 (15.36 TB).

Samsung aims to create 1,000-layer NAND by 2030 relying on its new "multi-BV" NAND design. The Bell reports that this plan involves stacking four wafers to overcome structural limits. Wafer bonding technology plays a crucial role in this progress and Samsung intends to use it to break the 1,000-layer barrier. Samsung Electronics DS division CTO, Song Jae-hyuk, pointed out that wafer bonding allows separate production of peripheral and cell wafers before joining them into one semiconductor. The Bell says this technology will likely appear first in Samsung's 10th-gen NAND (V10), while industry experts think a single wafer can hold about 500 NAND layers when implementing only cell structures. In the past, Samsung has used the COP (Cell on Peripheral) technique, a method that places the peripheral circuit on one wafer, with NAND cells stacked on top. However, as NAND layers grow, the lower peripheral parts face more pressure potentially affecting reliability.

Samsung's plan involves working with China's YMTC, which should offer a hybrid bonding patent for V10 NAND. ZDNet reports that the South Korean tech company will start making its V10 NAND in large quantities in the second half of 2025, with about 420-430 layers. Besides wafer bonding, Samsung adds other technologies to its NAND plan. The Bell points out that cold etching using molybdenum, and other new ideas will start with 400-layer NAND and play a key part in growing to 1,000 layers. Samsung isn't alone in trying to create ultra-high-layer NAND products. Japan's Kioxia also wants to reach this goal through its "multi-stack CBA" (CMOS Bonded to Array) technology. The company's plan is even bolder hoping to sell 1,000-layer 3D NAND by 2027.

During its first post-Western Digital spinoff investor day, SanDisk showed something it has been working on to tackle the AI sector. High-bandwidth flash (HBF) is a new memory architecture that combines 3D NAND flash storage with bandwidth capabilities comparable to high-bandwidth memory (HBM). The HBF design stacks 16 3D NAND BiCS8 dies using through-silicon vias, with a logic layer enabling parallel access to memory sub-arrays. This configuration achieves 8 to 16 times greater capacity per stack than current HBM implementations. A system using eight HBF stacks can provide 4 TB of VRAM to store large AI models like GPT-4 directly on GPU hardware. The architecture breaks from conventional NAND design by implementing independently accessible memory sub-arrays, moving beyond traditional multi-plane approaches. While HBF surpasses HBM's capacity specifications, it maintains higher latency than DRAM, limiting its application to specific workloads.

SanDisk has not disclosed its solution for NAND's inherent write endurance limitations, though using pSLC NAND makes it possible to balance durability and cost. The bandwidth of HBF is also unknown, as the company hasn't put out details yet. SanDisk Memory Technology Chief Alper Ilkbahar confirmed the technology targets read-intensive AI inference tasks rather than latency-sensitive applications. The company is developing HBF as an open standard, incorporating mechanical and electrical interfaces similar to HBM to simplify integration. Some challenges remain, including NAND's block-level addressing limitations and writing endurance constraints. While these factors make HBF unsuitable for gaming applications, the technology's high capacity and throughput characteristics align with AI model storage and inference requirements. SanDisk has announced plans for three generations of HBF development, indicating a long-term commitment to the technology.

Scientists have made a big step forward in data storage technology, they've managed to improve the manufacturing process for 3D NAND flash memory. This type of storage technology stacks memory cells on top of each other to obtain higher data density. A team of experts from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Lab came up with a better way to etch (the process of carving holes into alternating layers of silicon oxide and silicon nitride) by using hydrogen fluoride plasma. This new method cuts vertical channels through silicon-based materials twice as fast as before achieving 640 nanometers in just one minute.

The team found out that mixing in certain chemicals like phosphorus trifluoride helps the etching process. They also learned that some byproducts can slow down etching, but adding water can help fix this problem. "The salt can decompose at a lower temperature when water is present, which can accelerate etching", said Yuri Barsukov, a former PPPL researcher now working at Lam Research. This breakthrough is important as the need for data storage received a huge boost with the rise of AI programs, that need tons of storage.

Report on how AI is redefining market landscape - The global NAND flash market size is estimated to grow by USD 26.4 billion from 2025-2029, according to Technavio. The market is estimated to grow at a CAGR of almost 6.5% during the forecast period. Growing investments in fabrication facilities is driving market growth, with a trend towards rise in number of strategic partnerships and acquisitions. However, fluctuations in demand and supply poses a challenge. Key market players include ADATA Technology Co. Ltd., Berkshire Hathaway Inc., Flexxon Pte Ltd., Greenliant Systems, Hyperstone GmbH, Infineon Technologies AG, Innodisk Corp., Kingston Technology Co. Inc., Kioxia Corp., Macronix International Co. Ltd., Micron Technology Inc., Renesas Electronics Corp., Samsung Electronics Co. Ltd., Semiconductor Manufacturing International Corp., Shenzhen Longsys Electronics Co. Ltd., Silicon Motion Technology Corp., SK hynix Co. Ltd., Toshiba Corp., Transcend Information Inc., and UDISYS Ltd.

Yangtze Memory Technologies Co. has begun shipping its fifth-generation 3D NAND memory chips, featuring 294 total layers and 232 active layers, according to an analysis from TechInsights. The new chips achieve bit density near 20 Gb per square millimeter (19.8 Gb/mm²), comparable to current offerings from SK Hynix and approaching Kioxia/Western Digital's latest products. YMTC's design uses hybrid bonding to connect the memory array with logic components, suggesting that Chinese memory makers are up to speed on the packaging standards that their non-sanctioned competitors use. The company has opted for a quiet release without formal announcements, a departure from typical industry practice. This low-key approach may be related to ongoing US trade restrictions on Chinese semiconductor companies.

While not setting records for active layers, SK Hynix's upcoming 321-layer chip leads in that metric, and YMTC's achievement in total layer count demonstrates continued technical progress. The chip uses string stacking technology, though the specific configuration of the layer arrays remains unclear. Other specifications show the new chip employs YMTC's Xtacking 4.0 architecture and triple-level cell (TLC) design. This matches major competitors' architecture type, though detailed performance metrics such as interface speeds have not been disclosed. The 5th generation NAND focuses on getting density on the right track. However, we expect YMTC to continue development at the same speed, match SK Hynix with 321-layer chips, and surpass it with Xtacking 5.0 in the near future.

Kioxia had a small dugout at the 2025 International CES. The NAND flash major tends to have a much bigger booth at FMS than CES. The one in Vegas had its latest enterprise SSDs, all of which were launched through 2024, and a couple of new things. We first got a practical demo of how Kioxia achieves 218 layers of NAND flash in its latest generation of BiCS Flash using an architectural innovation called CBA—CMOS directly bonded to array. In CBA, the cell array acts like a pizza topping to the crust that is the CMOS layer, rather than being arranged side-by-side. This allows for greater density of flash cells. This also has certain performance and power advantages.

Next up, the company showed us their automotive-grade UFS 4.0 non-volatile storage device, which uses the latest 218-layer 3D NAND flash memory. This device was announced toward the end of 2024, and gathered a salad of certifications that make it fit for the latest generation of automobiles with advanced technology such as FSD, or an infotainment system that's practically as powerful as a PC. We also got a fascinating look at the testbed Kioxia uses to validate its automotive UFS 4.0 devices.

The semiconductor industry is expected to start 18 new fab construction projects in 2025, according to SEMI's latest quarterly World Fab Forecast report. The new projects include three 200 mm and fifteen 300 mm facilities, the majority of which are expected to begin operations from 2026 to 2027.

In 2025, the Americas and Japan are the leading regions with four projects each. The China and Europe & Middle East regions are each tied for third place with three planned construction projects. Taiwan has two planned projects, while Korea and Southeast Asia have one project each for 2025.

This week, at the 2024 IEEE International Electron Devices Meeting (IEDM), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, proposes a novel 3D integrated charge-coupled device (CCD) that can operate as a block-addressable buffer memory, in support of data-intensive compute applications. Memory operation is demonstrated on a planar proof-of-concept CCD structure which can store 142 bits. Implementing an oxide semiconductor channel material (such as IGZO) ensures sufficiently long retention time and enables 3D integration in a cost-efficient, 3D NAND-like architecture. Imec expects the 3D CCD memory density to scale far beyond the DRAM limit.

The recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement DRAM in data-intensive compute applications like AI and ML. One example is the CXL type-3 buffer memory, envisioned as an off-chip pool of memories that 'feeds' the various processor cores with large data blocks via a high-bandwidth CXL switch. This class of memories meets different specifications than byte-addressable DRAM, which increasingly struggles to maintain the cost-per-bit-trend scaling line.

Chinese semiconductor memory giant YMTC is reportedly manufacturing anywhere between 400-500,000 wafers per year of leading-edge NAND memory, all on domestically produced wafers. According to Mayuki Hashimoto, CEO and Chairman of SUMCO, a Japanese company supplying raw silicon ingots and polished wafers, they are seeing a significant business impact stemming from China's growing self-reliance, especially with companies like YMTC producing its own silicon ingots and polished wafers. This has led to SUMCO's decreasing revenue, where the CEO shared some insights about Chinese ambitions. He added that China is producing about one million wafers of silicon per year, most of which are test wafers. This includes test runs from companies like SMIC and its customers, such as T-Head, HiSilicon, and others.

Last year, YMTC, with its Xtacking 4.0 3D NAND flash architecture, was the first company to achieve a 200+ layer count in the 3D NAND space. The company's product, X4-9070, a 232-layer TLC 3D NAND, uses multiple silicon wafers, hence growing its massive consumption of silicon that is projected to reach 500,000 wafers per year. Given that this is all homegrown silicon from ingots to NAND, this is a massive success for Chinese self-reliance efforts but a huge blow to companies that used to supply Chinese firms with raw materials. Although the company uses custom silicon, it still relies on foreign tools, photoresists, and pre-cursors. There are some indications that YMTC is developing its own tools; it is a plan of a broader strategy in the Chinese semiconductor industry to develop every step of the semiconductor manufacturing process. Huawei is also there to develop EUV scanners, and YMTC could help with its memory business, which is in need of a new tool.

Transcend Information Inc. (Transcend ), a leading global manufacturer of memory storage solutions, announces the launch of its new CFX735 and CFX735I CFast cards. These cards feature built-in write protection technology, designed specifically for professional applications that require secure data storage and stable, high-performance write capabilities.

Leveraging 112-layer 3D NAND flash technology and a SATA III 6 Gb/s interface, this series offers exceptional read/write speeds and large storage capacities. Whether you're dealing with data-intensive applications or operating in demanding environments, these cards deliver reliable performance. The CFX735 operates in a temperature range of -5°C to 70°C, while the CFX735I is built for extreme environments, functioning reliably from -40°C to 85°C, perfect for outdoor and temperature fluctuating scenarios.

ADATA has launched the Legend 860 M.2 NVMe Gen 4 SSD series, aimed at mid-range users seeking a fast and reliable storage solution for PCs, laptops, or PS5 devices. Utilizing the PCIe Gen 4 x4 interface, the Legend 860 delivers sequential read and write speeds of up to 6,000 MB/s and 5,000 MB/s, respectively—three times faster than standard PCIe Gen 3 SSDs and ten times faster than SATA SSDs.

The lineup consists of three models with capacities of 500 GB, 1 TB, and 2 TB, each equipped with a slim aluminium heatsink. The ADATA Legend 860 utilizes 3D NAND flash chips and incorporates an SLC cache algorithm, HMB (Host Memory Buffer) technology, and an LDPC (Low-Density Parity Check) error correction mechanism, providing up to 640 TB TBW (Terabytes Written). ADATA offers a 5-year limited warranty, though pricing has not yet been disclosed.

GIGABYTE silently introduced the AI TOP UD 1 TB SSD, a new M.2 2280 form factor model to its AI Ultra Durable series dedicated to very intensive workloads, such as AI training. GIGABYTE's AI TOP UD SSD uses PCIe 4.0, so it's not going to break any speed records against drives using PCIe 5.0. It supports the NVMe 1.4 protocol, has a 5-year limited warranty, and is currently only available in 1 TB capacity. The product has a nominal TBW of 109,500 TB, equivalent to 60 DWPD, or 60 full disk writes per day. GIGABYTE doesn't reveal what kind of 3D NAND flash it utilizes to achieve such endurance levels.

The company has previously launched a product with a similar purpose to the AI TOP 100E SSD. In comparison, the new AI TOP UD SSD has slightly lower read/write performances (6500 MB/s vs 7200 MB/s sequential read, 5700 MB/s vs 6500 MB/s sequential write) and lower MTBF (1.5 vs 1.6 million hours). Additionally, while the AI TOP 100E SSD mentions that it is equipped with 1 GB external cache, the AI TOP UD SSD specification sheet does not mention anything. Regarding operating power, the 1 TB AI TOP UD SSD uses 6.2 W (Read) and 6.5 W (Write), while the previous AI TOP 100E SSD model's power consumption levels are between 10.8 W and 11.0 W. This means that the AI TOP UD SSD has lower requirements for heat dissipation, a crucial advantage in crowded high-performance servers where thermal management is a major concern. The company only recently listed the SSD, so pricing and availability are unknown.

Patriot Memory, a leading manufacturer of high-performance gaming memory modules, SSDs, flash memory, and gaming peripherals, today announced the launch of its latest innovation under the Viper Gaming brand: the Viper PV573 PCIeGen5 x4 M.2 2280 SSD. This product reinforces Patriot's leadership in cutting-edge technology, pushing speed boundaries beyond its predecessor, the PV553.

The Viper PV573 SSD utilizes advanced 3D NAND vertical stacking technology, significantly enhancing storage density while reducing power consumption and delivering faster read and write speeds. This innovation also improves durability, making it a reliable choice for users with demanding storage needs. With capacity options of up to 4 TB, the Viper PV573combines powerful performance in a compact, portable form factor, achieving the perfect balance of high capacity and efficiency within a small footprint.

Greenliant is now sampling high-endurance EnduroSLC NVMe M.2 2242 and 2280 ArmourDrive EX Series solid state drives (SSDs), providing 75,000 and 150,000 program-erase (P/E) cycles. Operating between -40 and +95 degrees Celsius, NVMe M.2 ArmourDrive EX Series SSDs offer high reliability and long-term support required by leading customers in aerospace and defense, industrial, transportation and networking.

Greenliant is also sampling upgraded NVMe M.2 2242 / 2280 ArmourDrive PX Series SSDs with high-quality industrial 3-bit-per-cell (TLC) 3D NAND that support 5,000 P/E cycles. Optimized for high performance and low power consumption, both EX and PX series products provide the convenience of removability. Offered from popular 2280 (GLS88AS) to small 2242 (GLS88CS) form factors and available in a wide range of capacities, these single-sided, thin-profile SSDs are ideal for space-constrained designs.

KLEVV, the premier consumer memory and storage brand introduced by Essencore, is keen to unveil the all-new GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD and CRAS C715 PCIe Gen3x4 NVMe M.2 SSD. Strategically named for its raw, unrivaled performance, the GENUINE G560 PCIe Gen5x4 NVMe M.2 SSD offers top-of-the-line hardware and cutting-edge storage technology packed into a highly refined product.

As KLEVV's first-ever PCIe Gen 5 SSD, it boasts exceptional speeds with sequential read and write capabilities of up to 14,000 MB/s and 12,000 MB/s, respectively. Alongside an impressive 4K random IOPS of up to 1,400K, the GENUINE G560 sets a new standard in advanced storage solutions. Engineered with a revolutionary 23x-layer 3D NAND, the GENUINE G560 delivers unparalleled efficiency and reliability, ideal for professional gamers, content creators, and casual use.

Transcend Information Inc. (Transcend), a global leader in industrial memory storage, is proud to announce its first industrial-grade PCIe M.2 22110 SSD, the MTE730P. This SSD features Power Loss Protection (PLP) technology, ensuring robust data integrity even in the most demanding environments. With PCIe Gen 4 performance and capacities of up to 4 TB, the MTE730P meets the needs of high-end industrial automation, blade servers, data centers, and other modern storage applications.

Power Loss Protection: Create Higher Data Integrity
The MTE730P's Power Loss Protection (PLP) technology is a critical feature for applications such as automated manufacturing, medical systems, transportation systems, and financial transaction. It ensures that the built-in tantalum capacitors provide power to the controller and DRAM cache during power fluctuations or outages, guaranteeing maximum data integrity and security.

Micron Technology, Inc., today announced the availability of the Crucial P310 2280 Gen 4 NVMe solid-state drive (SSD), which offers two times faster performance than Gen 3 SSDs and 40% faster performance than Crucial's P3 Plus, giving gamers, students and creatives a boost in speed when they boot and use data-intensive applications. With capacities up to 2 terabytes (TB) and read and write speeds of 7,100 and 6,000 megabytes per second (MB/s) respectively, the P310 2280 SSD enables more customers than ever to gain access to gaming performance without paying gaming prices. This launch expands Micron's P310 portfolio to address PCs, laptops and PlayStation 5, closely following the July launch of its award-winning Crucial P310 2230 SSD, which is targeted at users of handheld gaming consoles and mini PCs.

"Micron's Crucial P310 2280 SSD delivers blazing fast gaming-level speeds, allowing users to do it all faster — from gaming to booting Windows to running multiple creative apps at the same time — without compromising on quality," said Jonathan Weech, senior director of product marketing for Micron's Commercial Products Group. "Architected with our advanced 3D NAND technology and optimized to deliver the utmost power efficiency, the 2280 SSD empowers everyone from gamers to creatives to squeeze more out of their battery life when using data-rich apps."

Polish computer memory brand Goodram is launching a new external SSD called the HX200. Thanks to its parameters, the drive will interest a wide range of users, from mobile professionals to gadget lovers and those who store gigabytes of data in the form of photos, videos and documents.

With its unique colour, the drive will appeal to female users who appreciate style and elegance in their daily use of technology. The launch of the HX200 is manufacturer's next step towards providing innovative solutions combining functionality and aesthetics.