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43rd Symposium on VLSI Technology & Circuits to Focus on Multi-chiplet Devices and Packaging Innovations as Moore's Law Buckles

The 43rd edition of the Symposium on VLSI Technology & Circuits, held annually in Kyoto Japan, is charting the way forward for the devices of the future. Held between June 11-16, 2023, this year's symposium will see structured presentations, Q&A, and discussions on some of the biggest technological developments in the logic chip world. The lead (plenary) sessions drop a major hint on the way the wind is blowing. Leadning from the front is an address by Suraya Bhattacharya, Director, System-in-Package, A*STAR, IME, on "Multi-Chiplet Heterogeneous Integration Packaging for Semiconductor System Scaling."

Companies such as AMD and Intel read the tea-leaves, that Moore's Law is buckling, and it's no longer economically feasible to build large monolithic processors at the kind of prices they commanded a decade ago. This has caused companies to ration their allocation of the latest foundry node to only the specific components of their chip design that benefit the most from the latest node, and identify components that don't benefit as much, and disintegrate them into separate dies build on older foundry nodes, which are then connected through innovative packaging technologies.

YMTC Using Locally Sourced Equipment for Advanced 3D NAND Manufacturing

According to the South China Morning Post (SCMP) sources, Yangtze Memory Technologies Corp (YMTC) has been plotting to manufacture its advanced 3D NAND flash using locally sourced equipment. As the source notes, YMTC has placed big orders from local equipment makers in a secret project codenamed Wudangshan, named after the Taoist mountain in the company's home province of Hubei. Last year, YTMC announced significant progress towards creating 200+ layer 3D NAND flash before other 3D NAND makers like Micron and SK Hynix. Called X3-9070, the chip is a 232-layer 3D NAND based on the company's advanced Xtacking 3.0 architecture.

As the SCMP finds, YTMC has placed big orders at Beijing-based Naura Technology Group, maker of etching tools and competitor to Lam Research, to manufacture its advanced flash memory. Additionally, YTMC has reportedly asked all its tool suppliers to remove all logos and other marks from equipment to avoid additional US sanctions holding the development back. This significant order block comes after the state invested 7 billion US Dollars into YTMC to boost its production capacity, and we see the company utilizing those resources right away. However, few industry analysts have identified a few "choke points" in YTMC's path to independent manufacturing, as there are still no viable domestic alternatives to US-based tool makers in areas such as metrology tools, where KLA is the dominant player, and lithography tools, where ASML, Nikon, and Canon, are noteworthy. The Wuhan-based Wudangshan project remains secret about dealing with those choke points in the future.

Crucial T700 PCIe 5.0 SSD Preview Unit Hits 12 GB/s Read and Write Speeds, May 2023 Release Hinted

Crucial is keen to drum up early interest for an upcoming SSD model, and the Linus Tech Tips team has received and tested a sample unit. The T700 is a PCIe Gen 5 NVMe M.2 SSD storage solution based around a Phison PS5026-E26 controller, which is a very common choice for the current generation of PCIe 5.0 SSDs available on the market. Micron 3D NAND chips look to be present on the T700's PCB, and a Crucial-branded heatsink is mounted to the provided sample unit. It is interesting to note that the uncovered T700 unit bears a striking resemblance to Phison's E26 Engineering Reference sample, although the latter appears to feature SK Hynix memory chips, instead of Micron.

The LTT team posted benchmark results from a Crystal Disk Mark test session, and the T700 achieved maximums of 12.4 GB/s sequential read and 11.9 GB/s write speeds. This represents an almost two fold jump over the performance of Crucial's PCIe 4.0 based P5 Plus SSD, which is a substantial improvement and also very impressive considering the T700's usage of a passive cooling solution.

SK Hynix Eighth-Generation 300-Layer 3D NAND is a World First, Breaks Bandwidth Records

SK Hynix representatives unveiled the company's latest breakthrough in 3D NAND development at the ISSCC 2023 conference. Details of a new flash memory prototype featuring over 300 layers were revealed, and the company stated that a team of 35 engineers had contributed to the presentation material. In order to highlight the boost in performance offered by the prototype's improvements, it was compared to SK Hynix's previous record holding seventh-generation 238-layer 3D NAND. The new eighth-generation 3D NAND posted bandwidth figures with a maximum of 194 MB/s, which contrasts favorably with the older model's rate of 164 MB/s, representing an 18% increase in performance.

Recording density also benefits from the 300+ active layer design, with SK Hynix mentioning a 1 Tb (128 GB) capacity with triple level cells and a bit density of over 20 GB/mm^2. The chip features a 16 KB page size, four planes and a 2400 MT/s interface. The increase in density will result in a lower per-Tb cost during the manufacturing process. It is hoped that the end consumer will ultimately benefit from the boost in performance and capacity.

300 TB SSDs Could Arrive as Soon as 2026, Claims Pure Storage

Pure Storage, a maker of various storage solutions and custom enterprise-grade SSDs, claims the company will produce SSDs with up to 300 TBs of capacity by 2026. In an interview with Pure Storage CTO Alex McMullan, Blocks & Files got exclusive information that the company targets SSD capacities of up to 300 TBs in 2026. Pure Storage creates proprietary Direct Flash Modules (DFM) SSDs which use 3D NAND chips controlled by a custom SSD controller, are used in the FlashArray systems, and run on a custom FlashBlade operating system. This level of customization allows Pure Storage to create SSD drives with remarkable capacities in the future as the 3D NAND technology advances.

In the coming years, 3D NAND flash manufacturers will switch from the current 200-layer chips to the 400/500-layer chips, driving storage density to new highs. As manufacturers update their technology, so does Pure with its DFM cards that use regular U.2 NVMe connectors in a custom ruler-style format made explicitly for Pure FlashArray systems. Compared to upcoming HDDs that Toshiba and Seagate will use, Pure Storage DFM SSDs will have much higher capacities and read/write speeds, especially as higher-density 3D NAND arrives. You can see the comparison of Pure's estimates for the future 300 TB SSDs with future HDD technology.

Silicon Motion Launches Third Generation PCIe Gen 4 SSD Controller for Future TLC and QLC 3D NAND Flash

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today announced the SM2268XT, its latest high-performance PCIe Gen 4 SSD controller solution optimized for higher speed NAND transfer rates. The SM2268XT's superior performance and robust reliability allows customers to accelerate development of next-generation SSDs using current and future TLC and QLC 3D NAND flash with comprehensive data integrity and correction without compromising throughput and latency.

The SM2268XT features a dual-core ARM R8 CPU with four lanes of 16 Gb/s PCIe data flow and supports four NAND channels with up to 3,200 MT/s per channel, enabling designers to take advantage of higher throughput next-generation high-speed TLC and QLC 3D NAND flash. Its multi-core design automatically balances the compute load to deliver industry-leading sequential read and write speeds of 7,400 MB/s & 6,500 MB/s, and random read & write speed of 1,200K IOPS. In addition, its advanced architecture enables lower power consumption and rigorous data protection, providing high performance and reliability in a cost-effective DRAM-less PCIe Gen 4 NVMe SSD solution.

Transcend Intros MTE400S M.2-2242 Value NVMe SSD

Transcend introduced the MTE400S, a value-ended M.2 NVMe SSD meant for the prebuilt OEM/SI channel. Built in the 42 mm-long M.2-2242 form-factor, the drive features a PCI-Express 3.0 x4 host interface. It comes in capacities of 256 GB, 512 GB, and 1 TB; and features a DRAM-less design, possibly using a Phison-sourced controller. The company didn't specify the type of 3D NAND flash used. The top-spec 1 TB variant offers transfer-speeds of up to 2000 MB/s reads, with up to 1700 MB/s writes; while the 512 GB variant writes at up to 1000 MB/s, and the 256 GB variant up to 900 MB/s; with endurance ratings of 100 TBW, 200 TBW, and 400 TBW, respectively. The company didn't reveal pricing, but these should be among the cheapest drives in the market, as they're sold in tray volumes.

Phison E26 Controller Powering Several Upcoming PCIe Gen 5 NVMe SSDs Detailed

At the 2023 International CES, we caught a hold of Phison, makes or arguably the most popular SSD controllers, which sprung to prominence on being the first to market with PCIe Gen 4 NVMe controllers, and now hopes to repeat it with PCIe Gen 5. We'd been shown a reference-design Phison E26-powered M.2 SSD, along with some hardware specs of the controller itself. The drive itself isn't much to look at—a standard looking M.2-2280 drive with a PCI-Express 5.0 x4 host interface, and the Phison E26 controller with its shiny IHS being prominently located next to a DDR4 memory chip, and two new-generation Micron Technology 3D NAND flash memory chips.

The Phison E26 controller, bearing the long-form model number PS5026-E26, is an NVMe 2.0 spec client-segment SSD controller. It has been built on the TSMC 12 nm FinFET silicon-fabrication node. The controller features an integrated DRAM controller with support for DDR4 and LPDDR4 memory types for use as DRAM cache. Its main flash interface is 8-channel with 32 NAND chip-enable (CE) lines, support for TLC and QLC NAND flash, a dual-CPU architecture, and hardware-acceleration for AES-256, TCG-Opal, and Pyrite. The controller features Phison's 5th generation LPDC ECC and internal RAID engines. For its reference-design 2 TB TLC-based drive, Phison claims sequential transfer rates of up to 13.5 GB/s reads, with up to 12 GB/s writes. The 4K random-access performance is rated at up to 1.5 million IOPS reads, with up to 2 million IOPS writes.

Mushkin Vortex Redline and Votex LX NVMe SSDs Detailed, Epsilon Gen 5 SSD Teased

Mushkin at the 2023 International CES showed off its Vortex Redline and Vortex LX M.2 NVMe SSDs. The Vortex Redline is the company's top PCIe Gen 4 drive, combining an Innogrit IG5236 NVMe 1.4 controller with 3D TLC NAND flash, to offer transfer speeds of up to 7415 MB/s. The Vortex Redline comes in capacities of 512 GB, 1 TB, and 2 TB. The Vortex LX is a more value-oriented product, based on an unnamed Innogrit-sourced DRAMless controller. This drive features a PCIe Gen 4 interface, but offers slightly lower performance that the company didn't disclose.

The star attraction at the Mushkin booth was its Epsilon SSD that features a PCI-Express 5.0 x4 + NVMe 2.0 interface, a Phison E26-series controller, and next generation 3D NAND flash memory (possibly 232-layer). The drive features active cooling from a fan-heatsink, and while the company didn't talk about performance, drives based on this controller are known to offer up to 12 GB/s of sequential transfers. Lastly, the company showed off its lineup of 2.5-inch SATA 6 Gbps SSDs in capacities ranging all the way up to 16 TB, which are meant to be HDD replacements, and "warm" storage devices.

A Walk Through the KIOXIA Memory Lane

KIOXIA is betting big on enterprise flash storage, and demoed several of its new and already-launched NVMe products based on the company's 162-layer 3D NAND flash memory, aka 6th Generation BiCS flash. Starting off, we see several single-chip solutions, namely the BiCS5 eTLC, the BiCS Industial TLC, and the BiCS5-QLC. These are complete NVMe SSDs on a single package, targeting embedded systems, industrial PCs, and the likes. They can even be directly embedded on server motherboards to serve as boot drives, freeing up precious chassis space for the main storage devices.

The EM6 is an enterprise network-attached SSD in a 2.5-inch form-factor. This is a NAS-on-a-stick that can be deployed at large scale, and accessible as a network resource, or as an NVMe-over-Fiber device. The CM7 is a high-capacity 2.5-inch (EDSFF E3.S) SSD that comes in sizes of up to 30 TB, and has PCI-Express 5.0 x4 interface with NVMe 2.0 protocol, with endurance of up to 3 DWPD and offering FIPS 140-33 security. We also see the XD6 line of EDSFF E1.S form-factor NVMe SSDs with PCIe 4.0 interfaces, up to 3.84 TB capacity, and 1 DWPD endurance.

MSI Announces the Spatium M461, M453 and M451 PCIe 4.0 NVMe SSDs

MSI is announcing the launch of our new Gen4 PCIe NVMe models to its SSD category - SPATIUM M461, M452 & M453 in M.2 2280 form factors that can be easily installed into compatible desktop motherboards and laptops. These new products allow MSI to continue to refine its identity as a high-performance PC brand and grow its product ecosystem by expanding SPATIUM, our high-performance storage category. Our SSDs are built with high-quality, high-density 3D NAND flash that delivers astonishing performance and endurance for professionals, content creators, and gamers.

SPATIUM M461, The Competitive PCIe 4.0 SSD for Mainstream Segment.
SPATIUM M461 was developed to meet the expectations of mainstream SSD consumers. Blazing fast speeds up to 5000 MB/sec sequential read and 4200 MB/sec sequential write speeds allow users using the latest generation of PCs to enjoy the capabilities of the PCIe Gen4 interface. Available storage capacities are 500 GB, 1 TB, 2 TB, and 4 TB.

Greenliant Shipping SATA ArmourDrive SSDs with Ultra-High Endurance of 300K PE Cycles

Greenliant is now shipping mSATA and SATA M.2 2242 ArmourDrive EX Series solid state drives (SSDs) with EnduroSLC Technology for superior data retention and high endurance ranging from 60K and 120K to the industry-leading 300K program-erase (P/E) cycles. Built with Greenliant's advanced in-house controllers, these SSDs are available in 10 GB, 20 GB, 40 GB, 80 GB, 160 GB and 320 GB capacities.

mSATA and SATA M.2 2242 ArmourDrive EX Series SSDs are included in Greenliant's Long-Term Availability (LTA) program (http://bit.ly/SSD-LTA-program), providing customers with a stable portfolio of high-endurance data storage products for up to 10 years. Greenliant is also shipping mSATA and SATA M.2 2242 / 2280 ArmourDrive PX Series SSDs using cost-effective industrial 3-bit-per-cell (TLC) 3D NAND. These SSDs support 5K P/E cycles and are available in 64 GB, 128 GB, 256 GB and 512 GB capacities.

Blacklisting of YMTC by the U.S. Enables Samsung to Raise NAND Flash Prices by 10%

YMTC, the Chinese DRAM and NAND flash company that recently announced a 232-layer 3D NAND flash memory that threatened to disrupt entrenched players Samsung, Micron Technology, Kioxia, and SK Hynix, has been blacklisted by the U.S. Department of Commerce, forcing American consumer electronics and PC manufacturers to stop sourcing from the company. Capitalizing on just this, Samsung raised prices of its NAND flash memory chips by as much as 10%, according to a DigiTimes report.

YMTC peaked when Apple struck a NAND flash supply deal with the company in 2020, which would see its storage devices power pretty much every Apple product you can think of, however, under political pressure, Apple withdrew from this deal in 2022. The Department of Commerce contention has been to that YMTC has access to cutting-edge technology, and is backed by Chinese state-capacity, which can help it drive out competitors. All is not well between the U.S. and China geopolitically, either. Samsung's 10% increase in the first half of December 2022 concerns spot-pricing, which could mean its contract pricing (usually used by customers placing very large orders), could be different. It is conceivable that the exit of YMTC from the U.S. market could raise NAND flash product prices across the board.

YMTC Could Abandon Market for 3D NAND Flash by 2024 Following US Government's Decision to Place It on Entity List, Says TrendForce

Global market intelligence firm TrendForce states that Chinese memory manufacturer YMTC is now at risk of exiting the market for 3D NAND Flash products by 2024 following its formal placement on the Entity List of the US Commerce Department on December 15. From this point forward, the Commerce Department will be reviewing and approving individual transactions related to the exportation, re-exportation, and sales of equipment, technologies, and other related goods from the US to YMTC. With acquisitions of equipment parts and technical support from its US partners becoming very difficult and prolonged, YMTC is going to be severely constrained from raising its bit output. Hence, its foothold on the market for 3D NAND Flash products is expected to weaken as time goes by.

TrendForce points out that without the support of the key equipment providers, YMTC is now facing a huge technical obstacle in the development of its latest 3D NAND Flash technology known as Xtacking 3.0. In particular, raising yield rate for the 128L and 232L processes is going to be extremely challenging for the Chinese memory manufacturer. Taking account of this latest escalation in the US-China trade dispute, TrendForce has further corrected down its projections on YMTC's supply bit growth rate and the total NAND Flash supply bit growth rate for next year. YMTC supply bits were initially forecasted to grow by 60% YoY for 2023. However, there was a massive downward correction that put its growth rate at just 18%. Now, YMTC is forecasted to post a YoY decline of 7%, which is a complete reversal from the earlier projections.

YMTC Introduces X3-9070 3D NAND Flash Powered by Innovative Xtacking 3.0 Architecture

YMTC today at the Flash Memory Summit (FMS) 2022 unveiled its X3-9070 TLC 3D NAND flash powered by Xtacking 3.0 architecture. Since its debut show at FMS 2018, YMTC's Xtacking technology has become a hallmark of the company's vision for innovation, and the approach to hybrid bonding has been widely recognized as one of the key enablers of the industry's future growth. Built out to be a common growth platform that drives value and innovation in the semiconductor ecosystem, YMTC's Xtacking 3.0 architecture opens up a world of opportunities for diversified applications in 5G, AloT, and beyond.

From 1.0 to 3.0, YMTC's Xtacking technology, a heterogeneous 3D integration architecture, has established a proven track record of success, as evidenced by a diverse portfolio of Xtacking NAND-based system solutions, including SATA III, PCIe Gen3 & Gen4 SSDs, as well as eMMC & UFS for mobile and embedded applications, garnering recognition from leading OEMs.

Team Group Launches P845-M80 Industrial M.2 NVMe Gen 4 SSD

Team Group, the global leader in industrial memory modules, launches the brand's first industrial grade PCIe Gen4x4 M.2 2280 SSD, P845-M80. With the adoption of the ultra-fast Gen 4 x4 interface, it delivers an exceptional reading/writing performance for a large data amount. Equipped with BiCS 5 112-layer 3D NAND flash memory, it is a highly cost-competitive solution that accelerates the development of biomedical innovation and digital medicine applications. P845-M80 comes in a maximum capacity of 2 TB and meets the NVMe 2.0 standards. Its bandwidth and data transmission speed are twice that of its predecessor PCIe Gen3, making it even more ideal for the transmission of large amounts of data. Meanwhile, its 3K P/E cycles make it the best memory solution in both performance and durability.

In the wake of the global pandemic, science and digital medicine is rapidly on the rise in innovative biomedical fields. In response to the significant increase in the demand for high-performance image processing and stable storage, Team Group introduces the PCIe Gen 4 x4 industrial grade SSD with the adoption of an 8-channel controller and optional patented graphene and aluminium fin heat dissipation technologies. It effectively reduces the thermal energy generated from high-speed reading and writing and maintains system stability. The patented graphene heat dissipation technology (US invention patent number: US 110,513,92 B2 / Taiwan invention patent number: I703921) features a small volume and agility in application, suitable for machines of smaller sizes. Whereas, the patented aluminium fin heat dissipation technology (Taiwan utility model patent number: M541645) enables maximum heat dissipation and prolongs product service life. Both technologies are novel options for biomedical innovators, offering stability, high speed, and low latency.

Chinese YMTC Achieves Mass-production of 232-layer 3D NAND, Beating Kioxia, Micron, Samsung, and SK Hynix

YMTC delivered on its roadmaps to achieve a mass-production 232-layer 3D NAND flash memory, beating entrenched players Kioxia, Micron Technology, Samsung Electronics, and SK Hynix, to the production 200+ layer feat. The Chinese memory and NAND flash giant announced this memory back in August 2022 as the YMTC X3-9070, along with its new Xtacking 3.0 architecture—a proprietary method by which the company can reliably stack a large number of NAND flash layers. Micron Technology is ready with a 232-layer 3D NAND flash of its own, although it hasn't hit a production ramp, yet. This is an incredible feat considering that YMTC only got into this business in 2016, compared to the other players that each have over two decades of market presence.

YMTC's ramp to 232-layer closely follows its unexpected 2020 feat of a production-grade 128-layer 3D NAND, which was groundbreaking enough to win a supply contract with Apple, before losing it in October 2022, due to political reasons (not technological reasons). The Xtacking 3.0 architecture involves back side source connect (BSSC) for the memory cell wafer, which leads to simpler process and lower cost compared to Xtacking 2.0 (up to 128-layers, which had introduced nickel silicide (NiSi) instead of tungsten silicide (WSi) for better device performance and I/O speed for CMOS wafer. The original Xtacking architecture from YMTC, which it debuted back in 2016, with layer counts going up to 64-layer, relied on cost-effective wafer-to-wafer bonding. The YMTC 232-layer 3D NAND flash should find plenty of takers in the consumer electronics industry, spanning smartphones, consumer storage devices, TVs, and other appliances. The high layer-count has a direct impact on density, which can help designers lower costs by using fewer chips, or increase capacity.

Netac Rolls Out NV5000-t M.2 NVMe Gen4 SSD

Netac over the weekend released the NV5000-t, an M.2 NVMe SSD that takes advantage of the PCI-Express 4.0 x4 host interface, offering mid-range performance. Available in 500 GB and 1 TB capacities, the drive uses an unspecified type of 3D NAND flash memory, and a DRAMless controller design. On offer, are sequential transfer rates of up to 4800 MB/s reads, with up to 4600 MB/s writes for the 1 TB variant. The 500 GB variant writes sequentially at speeds of up to 2700 MB/s, but with the same up to 4800 MB/s reads. The 1 TB variant offers endurance of 640 TBW, while the 500 GB variant does 320 TBW. Both models are backed by 5-year warranties. The company didn't reveal pricing.

Samsung Begins Mass Production of 8th-Gen V-NAND with Industry's Highest Bit Density

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, as promised at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022, announced today that it has begun mass producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the industry's highest bit density. At 1 Tb, the new V-NAND also features the highest storage capacity to date, enabling larger storage space in next-generation enterprise server systems worldwide.

"As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down," said SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics. "Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations."

Transcend Announces MTE250S High-Performance M.2 NVMe Gen 4 SSD

Transcend, a leading brand in digital storage and multimedia products, has officially launched the advanced PCIe 4.0 M.2 solid-state drive (SSD) MTE250S. Featuring 3D NAND flash, an 8-channel controller, and DRAM cache, this SSD delivers sequential read and write speeds of up to 7200/6500 MB/s (R/W) and ample capacity of up to 2 TB. Its ultra-thin graphene heatsink ensures stable performance during non-stop operation, and its proven performance will bring gamers, content creators, and software developers a fundamental boost, helping them excel in their fields.

Fully compliant with the latest NVMe 1.4 specifications, MTE250S comes in an M.2 2280 form factor with an 8-channel controller and a fast PCIe Gen4 x4 interface, unleashing sequential R/W speeds of up to 7200/6500 MB/s and 4K random R/W speeds reaching 530K IOPS. Video editors and gamers alike will benefit from its impressive speeds, reduced downtime, and ample capacity of up to 2 TB, all of which are necessary for tackling the most demanding tasks.

Apple Terminates Plans to Use YMTC 3D NAND Chips Amid Political Pressure

In September, we reported that Apple, the world's most valuable company, would source some of its 3D NAND flash chips from the Chinese Yangtze Memory Technologies Corp (YMTC). However, according to the latest political pressure from the US government, Apple has reportedly canceled any contracts with the Chinese company and will not include their 3D NAND chips in the production of iPhones, iPads, and Mac computers. Even with YTMC's Xstacking 3.0 six-plane architecture that provides triple-level cell storage with I/O speeds of 2400 MT/s, Apple is not going to source any NAND Flash memory as US-China political relationship gets tighter regulations.

However, this could not be a deal breaker for both companies, as NAND Flash is in high demand, and new clients will emerge. As for Apple, the company has contracts with Kioxia, SK Hynix, Samsung, and possibly others that will ensure a steady supply of storage for the company's solutions.

South Korea's IC Production Slides for the First Time in Years

The economic downturn keeps pushing the PC and related manufacturing markets down, following slumps in demand stemming from increased cost of living, the veritable arms race to technological products during COVID-19, and manufacturer's efforts to increase output to provide enough product to meet said demand. But all that goes up must eventually come down, and now South Korean manufacturers are facing the result of months of decreased consumption, with stock levels increasing ahead of actual product uptake (stocks have reached 67.3% of produced goods and factory shipments have declined 20.4%). This has now led to a 1.7% decline in August's output when compared to the same period last year - the first time the South Korean industry has seen negative growth since 2018.

Samsung and Kioxia both have announced a reduction in production output in the months to come, which should give distribution enough time to clear some of the accumulated inventory. The scales of production typically occur in cycles - ones with excess manufacturing against demand, and other times where the reverse happens. It seems we're now in the descending part of the spectrum, with prices - especially of NAND - being expected to drop in the coming months. It will take a while until the manufacturing reduction makes itself felt in the overall IC pricing landscape. Micron too has announced it's slowing down the production ramp-up of its 232-layer 3D NAND so as not to contribute in excess towards an already over-saturated market.

MSI Reveals Superb SPATIUM PCIe 5.0 Storage Performance & Enriches Its Lineup with SPATIUM M460 (HS)

MSI, the world's leading gaming PC hardware brand, is proud to announce the new SPATIUM M570 PCIe 5.0 NVMe M.2 HS, with blazing fast read speeds up to 10 GB/s that unites the latest in top-notch PCIe Gen 5 controller technology with high-quality 3D NAND flash, and advanced cooling. Sporting a bronze-coloredaluminiumm heatsink, the SPATIUM M570 PCIe 5.0 NVMe M.2 HS SSD takes a sensational leap in storage performance, bringing more than 1.5 times faster read/write speeds compared to current PCIe 4.0 SSDs. With compliance of NVMe 2.0 and M.2 2280 form factor, the SPATIUM M570 HS offers optimal performance and long-lasting durability in 1 TB, 2 TB, and 4 TB capacity variants for professionals, content creators, and gamers in an easy installation and extreme transfer speeds for multitasking workloads. The strong collaboration between MSI and Phison was showcased to convey innovations in the storage space area during CES 2022 mutually.

"K.S.Pua, CEO of Phison Electronics, said that the cooperation between Phison and MSI started from the SSD product line. Since both companies have their own expertise in NAND controller and computer system integration respectively, and in addition to SSD, MSI has also actively expanded its strategy in the fields of gaming, content creators, commercial, industrial, robotics, and even automotive in recent years, where the application markets are in line with Phison's long-term strategy, so the two companies hit it off. The SPATIUM PCIe 5.0 SSD launched by MSI this time adopted Phison's E26 SSD controller. Since the performance of PCIe 5.0 is much faster than the previous generation of PCIe 4.0, the two companies have conducted a lot of tests and discussions on power consumption and heat dissipation, which is a valuable cooperation experience. In the future, Phison will continue to support MSI through controller technology."

Not All First Generation PCIe 5.0 SSDs Will Offer the Same Performance

The first batch of PCIe 5.0 SSDs are all likely to be based on Phison's PS5026-E26 controller, which offers eight NAND channels, capable of supporting NAND speeds of up to 2400 MT/s. Phison's own figures for the controller are 13 GB/s writes and 12 GB/s reads, with up to 1.5 million random read IOPS and 2 million random write IOPS. However, as we've already seen from various SSD brands, many PCIe 5.0 SSDs won't exceed 10 GB/s when it comes to the sequential read/write speeds. This is because the current NAND flash simply isn't fast enough to saturate the PCIe 5.0 bus, which is capable of 15.75 GB/s. That said, Micron's 232-layer 3D NAND should be able to boost the performance up to 12.4 GB/s based on the numbers Gigabyte announced for their Aorus Gen 10000 SSD.

Based on an article over at Tom's Hardware, we shouldn't expect too many drives that exceed 10 GB/s sequential writes at launch, due to most drives using 176-layer 3D NAND flash, that is limited to 1600 MT/s. As such, it might be wise to hold off on buying the first generation of PCIe 5.0 drives and wait for better availability of 232-layer 3D NAND, as beyond Micron, SK Hynix is expected to have a 238-layer 3D NAND flash in the market sometime in the first half of 2023. If you're not really eager to have the fastest SSD out there for pure bragging rights, it would seem that mid 2023 might be the right time to get a PCIe 5.0 SSD.

Apple to Source 3D NAND Memory from Chinese YMTC

As reported by BusinessKorea, Apple, one of the largest companies in the world, will source its 3D NAND from Chinese memory maker Yangtze Memory Technologies Corp (YMTC). Known for supplying 3D NAND to Chinese SSD makers, YTMC's reported contract with Apple will fuel the upcoming iPhone 14 SKU manufacturing. Whether or not this partnership will expand to other products, it is essential to have as many storage sources as possible, as Apple sells millions of devices per year. YTMC is on track to deliver 3D NAND flash with the latest Xstacking 3.0 six-plane architecture that provides triple-level cell storage with I/O speeds of 2400 MT/s.

YTMC has joined the list of 3D NAND flash vendors that Apple works with, including SK Hynix, Samsung, Kioxia, and possibly others. This partnership also highlights that the Chinese memory output is sufficient and significant enough to break into more markets worldwide, not remaining exclusive to domestic use.
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