Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.

Swissbit, a leading manufacturer of industrial-grade flash memory solutions, today announced the release of its new product line of SATA SSDs. The series X-73, X-75 and X-78 are powered by cutting-edge industrial 112-layer 3D NAND technology, bringing unprecedented reliability and extended lifespan to the world's most crucial networks. The latest portfolio is built with Swissbit's dedication to quality and innovation. The new portfolio not only offers reduced Total Cost of Ownership (TCO) thanks to its extended product life cycle, but also comes with powersafe SSDs - Swissbit's industry-leading power loss protection feature.

The expanded SSD product line includes M.2 2242, M.2 2280, Slim SATA MO-297, and 2.5" form factors, and offers a wide capacity range from 40 GB up to 1.92 TB. With an industry-leading 100k P/E cycles, the high endurance versions in pSLC mode are aimed at addressing the increasing market demand for durable and reliable data storage solutions.

Solidigm today announced the D7-5810, an enterprise SSD for extremely intensity write workloads. Such a drive would be capable of write endurance in the neighborhood of 50 DWPD. For reference, the company's D7-P5620, a write-centric/mixed workload drive for data-logging, and AI ingest/preparation, offers around 3 DWPD of endurance, depending on the variant; and the read-intensive drive meant for CDNs, the D5-P5336, offers around 0.5 DWPD. Use cases for the new D7-P5810 include high performance caching for flash arrays dealing with "cooler" data; high-frequency trading, and HPC.

Solidigm D7-P5810 uses SK hynix 144-layer 3D NAND flash that's made to operate in a pure SLC configuration. The drive comes in 800 GB and 1.6 TB capacities, and offers 50 DWPD over an endurance period of 5 years (4K random writes). More specifically, both models offer 73 PBW (petabytes written) of endurance. The drive comes in enterprise-relevant 15 mm-thick U.2 form-factor, with PCIe Gen 4 x4 interface, with NVMe 1.3c and NVMe MI 1.1 protocols.

KLEVV, an emerging memory brand introduced by Essencore today, is excited to unveil its latest M.2 Solid State Drive, the CRAS C910 Lite, packed with advanced specs for unparalleled performance. As a new addition to KLEVV's M.2 SSD lineup, the all-new CRAS C910 Lite utilizes PCI Express Gen 4 x4 interface supported by NVMe 1.4, ensuring lightning-fast data transfer rates excellent for competitive gaming and content creation.

Available in multiple storage capacities, including 500 GB, 1 TB, 2 TB, and 4 TB, the CRAS C910 Lite features strictly-selected 3D NAND Flash components, enabling impressive sequential read/write speeds of up to 5000/4200 MB/s and 4K Random Read/Write IOPS of up to 680,000/880,000.
A feather-light weight of a mere 7gram thanks to its revolutionary ultra-thin, single-sided SSD architecture based on the M.2 2280, the CRAS C910 Lite redefines compact performance, making it a perfect fit for a wide array of devices from nimble mini-PCs to sleek laptops.

It appears that Samsung is getting ready to beat SK Hynix in the race to 300 plus layers of NAND Flash, at least according to reports coming out of South Korea. The Seoul Economic Daily claims in an exclusive that Samsung will have a 300 plus layer V-NAND—(V for Vertical or 3D NAND—chip ready for production in 2024 and could as such beat SK Hynix by as much as a year, depending on how soon Samsung can deliver. Currently Samsung's most cutting edge stacked NAND is a 236-layer product, which is four more layers than Micron and YMTC, but two less than SK Hynix.

What sticks out in the Seoul Economic Daily news piece is that unlike SK Hynix, which is going for a triple stack sandwich, Samsung will apparently stick with two stacks. This means that Samsung is aiming for over 150-layers of NAND per stack, which seems like a big risk to take when it comes to yields. The taller the stacks, the bigger the chance of a failed stack, but maybe Samsung has found a solution around this potential issue. As modern 3D NAND relies on Through Silicon Vias, it's easier to manufacture denser stacks than in the past when wire bonding was used, but even so, this seems like a big risk for Samsung to take. That said, considering the current low demand and news of further cutbacks in production, it might be a good time for Samsung to utilise its fabs to test out this new, more densely stacked NAND to see if the company can mass produce it without issues. Samsung's roadmap calls for a 1000 plus layer V-NAND product by 2030, but it seems like the road there is still long and complicated.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

Phison Electronics, a global leader in NAND controllers and storage solutions, announced today the expansion of its IMAGIN+ service to include AI computational models and AI services solutions. Phison's aiDAPTIV+ utilizes Phison's innovative integration of SSDs into the AI computing framework and expands NAND storage solutions in the AI application market. Phison has been a global leader deeply engaged in NAND controller innovations for more than 23 years. In recent years, the company has developed and integrated AI and machine learning technologies into NAND controllers and algorithms in order to enhance the computational performance and reliability of the company's NAND storage solutions.

Additionally, Phison has established a data science team, developed and deployed relevant AI technologies, and created a world-class validation laboratory. These efforts have accelerated the adoption of Phison's storage solutions in various applications, including PCs, mobile phones, automobiles, gaming platforms, enterprise data center & edge applications, supply chain logistics, and more. With the recent rise of large-scale generative AI models such as ChatGPT, the possibilities for artificial intelligence to assist both businesses and individuals in the future are significant. The rapid growth of AI models has also led to a significant increase in the hardware infrastructure cost associated with providing AI services.

Transcend Information (Transcend), a leading manufacturer of embedded memory products, is proud to release the latest U.2 NVMe SSD, the UTE210T. Designed for generative AI, high-performance computing (HPC), and big data analytics, this powerful SSD is built with the 112-layer 3D NAND flash, an 8-channel controller, and a PCIe Gen 4x4 interface. Experience high speeds, low latency, and minimal power consumption with your systems, but most of all, enjoy sequential R/W speeds of up to 7,200/6,500 MB/s and stable and reliable system performance that supports various applications of use.

Compliant with the NVMe 1.4 specification, Transcend's UTE210T comes bundled with a U.2 connector, enabling the drive to configure the PCIe interface with the U.2 backplane, ultimately enhancing transfer stability without compromising your servers. To address the demanding workloads associated with AI, its built-in DRAM provides exceptional random read speeds, which not only reduces NAND flash Program/Erase cycles (P/E cycles), but effectively extends drive lifespan to help manage a wide range of workloads. The UTE210T comes with up to 8 TB of storage capacity, ensuring servers and data centers are able to process vast amounts of data without compromising system performance.

In the world of modern embedded computing, motherboards and systems are equipped with numerous M.2 and Mini-PCI Express sockets. These sockets provide ideal homes for networking communication adapters and solid-state drives (SSDs), including NVMe-compatible SSDs. With an abundance of sockets, embedded systems now have unparalleled connectivity and storage options.

Cervoz recognizes this need and introduces a new industrial SSD perfectly suited for these boards and systems: the M.2 2242 PCIe Gen 3 x 2 (B+M Key) SSD, T421. This SSD is designed specifically for embedded motherboards and systems, making it a perfect fit for industrial applications ranging from retail and gaming solutions to embedded computing devices.

ATP Electronics, the global leader in specialized storage and memory solutions, introduces its latest high-speed N601 Series M.2 2280 and U.2 solid state drives (SSDs) sporting the 4th generation PCIe interface and supporting the NVMe protocol. The new ATP PCIe Gen 4 SSDs' 16 GT/s data rate is double that of the previous generation, translating to a bandwidth of 2 GB/s for every PCIe lane.

Using x4 lanes, these SSDs have a maximum bandwidth of 8 GB/s, meeting the growing need for high-speed data transfer in today's demanding applications and making them suitable for both read/write-intensive, mission-critical industrial applications such as networking/server, 5G, data logging, surveillance, and imaging, with performance on par, if not better, than mainstream PCIe Gen 4 consumer SSDs in the market.

Micron Technology, Inc. announced today that it is now delivering qualification samples of its Universal Flash Storage (UFS) 4.0 mobile solution, built on its advanced 232-layer 3D NAND. Offered in high capacities up to 1 terabyte (TB), the UFS 4.0 storage solution is being shipped to select global smartphone manufacturers and chipset vendors. Micron's newest mobile flash storage outpaces competition on several critical NAND benchmarks, delivering the industry's fastest performance for flagship smartphones with fast bootup, app launches and video downloads.

"Micron's latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones."

Lam Research Corp. (Nasdaq: LRCX) today introduced Coronus DX, the industry's first bevel deposition solution optimized to address key manufacturing challenges in next-generation logic, 3D NAND and advanced packaging applications. As semiconductors continue to scale, manufacturing becomes increasingly complex with hundreds of process steps needed to build nanometer-sized devices on a silicon wafer. In a single step, Coronus DX deposits a proprietary layer of protective film on both sides of the wafer edge that helps prevent defects and damage that can often occur during advanced semiconductor manufacturing. This powerful protection increases yield and enables chipmakers to implement new leading-edge processes for the production of next-generation chips. Coronus DX is the newest addition to the Coronus product family and extends Lam's leadership in bevel technology.

"In the era of 3D chipmaking, production is complex and costly," said Sesha Varadarajan, senior vice present of the Global Products Group at Lam Research. "Building on Lam's expertise in bevel innovation, Coronus DX helps drive more predictable manufacturing and significantly higher yield, paving the way for adoption of advanced logic, packaging and 3D NAND production processes that weren't previously feasible."

Tokyo Electron announced that its development team at Tokyo Electron Miyagi—the development and manufacturing site for its plasma etch systems—has developed an innovative etch technology capable of producing memory channel holes in advanced 3D NAND devices with a stack of over 400 layers. The new process developed by the team has brought dielectric etch application to the cryogenic temperature range for the first time, producing a system with exceptionally high etch rates.

The innovative technology not only enables a 10-µm-deep etch with a high aspect ratio in just 33 minutes, but also can reduce the global warming potential by 84% compared with previous technologies. The geometry of the etched structure is quite well-defined as shown in the figure 1. Potential innovations enabled by this technology will spur creation of 3D NAND flash memory with even larger capacity.

MSI, the world's leading gaming PC hardware brand, is proud to announce the new SPATIUM M570 PRO Series, featuring the revolutionary PHISON E26 PCIe Gen 5 SSD controller and state-of-the-art 3D NAND flash. Designed to push the limits of storage performance, the SPATIUM M570 PRO Series SSD delivers an astonishing top read speed of 14 GB/s, breaking the world record and setting new industry standards.

The strong collaboration and cooperation between MSI and PHISON have made this record possible as both companies share in the excitement of pushing the envelope. "K.S.Pua, CEO of Phison Electronics, said that the cooperation between Phison and MSI started from the SSD product line. Since both companies have their own expertise in NAND controller and computer system integration respectively, and in addition to SSD, MSI has also actively expanded its strategy in the fields of gaming, content creators, commercial, industrial, robotics, and even automotive in recent years, where the application markets are in line with Phison's long-term strategy, so the two companies hit it off. The SPATIUM M570 Pro Series SSD announced by MSI this time adopted Phison's E26 SSD controller. Since the performance of PCIe 5.0 is much faster than the previous generation of PCIe 4.0, the two companies have conducted a lot of tests and discussions on power consumption and heat dissipation, which is a valuable cooperation experience. In the future, Phison will continue to support MSI through controller technology."

Global memory leader, Team Group, continues to develop and manufacture innovative, high-performance, and reliable industrial memory storage products, providing customers with convenient and flexible solutions. Today, it is releasing the brand new P845-M30 SSD, designed for the M.2 2230 form factor and PCIe Gen 4 interface. This compact, high-performance SSD is suitable for mini industrial PCs, handheld embedded applications, and AIoT-related tasks.

The P845-M30 comes with 112 layers of high-quality 3D NAND flash memory and uses page mapping technology to reduce its block P/E cycling frequency, extending its lifespan, and increasing its random access speeds. It is available in capacities ranging from 256 GB to 1 TB and measures only 30 mm in length. In addition, its support of the PCIe Gen 4 interface allows it to provide high-speed transfers with low power consumption. The P845-M30 can upgrade your device's performance without taking up space, making it the ideal SSD solution for mini industrial computers, which require a small form factor and large capacities.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. Relevant patent applications were published with the United States Patent Application Publication on April 6, 2023.

"3D X-DRAM will be the absolute future growth driver for the Semiconductor industry," said Andy Hsu, Founder and CEO of NEO Semiconductor and an accomplished technology inventor with more than 120 U.S. patents. "Today I can say with confidence that Neo is becoming a clear leader in the 3D DRAM market. Our invention, compared to the other solutions in the market today, is very simple and less expensive to manufacture and scale. The industry can expect to achieve 8X density and capacity improvements per decade with our 3D X-DRAM."

The 43rd edition of the Symposium on VLSI Technology & Circuits, held annually in Kyoto Japan, is charting the way forward for the devices of the future. Held between June 11-16, 2023, this year's symposium will see structured presentations, Q&A, and discussions on some of the biggest technological developments in the logic chip world. The lead (plenary) sessions drop a major hint on the way the wind is blowing. Leadning from the front is an address by Suraya Bhattacharya, Director, System-in-Package, A*STAR, IME, on "Multi-Chiplet Heterogeneous Integration Packaging for Semiconductor System Scaling."

Companies such as AMD and Intel read the tea-leaves, that Moore's Law is buckling, and it's no longer economically feasible to build large monolithic processors at the kind of prices they commanded a decade ago. This has caused companies to ration their allocation of the latest foundry node to only the specific components of their chip design that benefit the most from the latest node, and identify components that don't benefit as much, and disintegrate them into separate dies build on older foundry nodes, which are then connected through innovative packaging technologies.

According to the South China Morning Post (SCMP) sources, Yangtze Memory Technologies Corp (YMTC) has been plotting to manufacture its advanced 3D NAND flash using locally sourced equipment. As the source notes, YMTC has placed big orders from local equipment makers in a secret project codenamed Wudangshan, named after the Taoist mountain in the company's home province of Hubei. Last year, YTMC announced significant progress towards creating 200+ layer 3D NAND flash before other 3D NAND makers like Micron and SK Hynix. Called X3-9070, the chip is a 232-layer 3D NAND based on the company's advanced Xtacking 3.0 architecture.

As the SCMP finds, YTMC has placed big orders at Beijing-based Naura Technology Group, maker of etching tools and competitor to Lam Research, to manufacture its advanced flash memory. Additionally, YTMC has reportedly asked all its tool suppliers to remove all logos and other marks from equipment to avoid additional US sanctions holding the development back. This significant order block comes after the state invested 7 billion US Dollars into YTMC to boost its production capacity, and we see the company utilizing those resources right away. However, few industry analysts have identified a few "choke points" in YTMC's path to independent manufacturing, as there are still no viable domestic alternatives to US-based tool makers in areas such as metrology tools, where KLA is the dominant player, and lithography tools, where ASML, Nikon, and Canon, are noteworthy. The Wuhan-based Wudangshan project remains secret about dealing with those choke points in the future.

Crucial is keen to drum up early interest for an upcoming SSD model, and the Linus Tech Tips team has received and tested a sample unit. The T700 is a PCIe Gen 5 NVMe M.2 SSD storage solution based around a Phison PS5026-E26 controller, which is a very common choice for the current generation of PCIe 5.0 SSDs available on the market. Micron 3D NAND chips look to be present on the T700's PCB, and a Crucial-branded heatsink is mounted to the provided sample unit. It is interesting to note that the uncovered T700 unit bears a striking resemblance to Phison's E26 Engineering Reference sample, although the latter appears to feature SK Hynix memory chips, instead of Micron.

The LTT team posted benchmark results from a Crystal Disk Mark test session, and the T700 achieved maximums of 12.4 GB/s sequential read and 11.9 GB/s write speeds. This represents an almost two fold jump over the performance of Crucial's PCIe 4.0 based P5 Plus SSD, which is a substantial improvement and also very impressive considering the T700's usage of a passive cooling solution.

SK Hynix representatives unveiled the company's latest breakthrough in 3D NAND development at the ISSCC 2023 conference. Details of a new flash memory prototype featuring over 300 layers were revealed, and the company stated that a team of 35 engineers had contributed to the presentation material. In order to highlight the boost in performance offered by the prototype's improvements, it was compared to SK Hynix's previous record holding seventh-generation 238-layer 3D NAND. The new eighth-generation 3D NAND posted bandwidth figures with a maximum of 194 MB/s, which contrasts favorably with the older model's rate of 164 MB/s, representing an 18% increase in performance.

Recording density also benefits from the 300+ active layer design, with SK Hynix mentioning a 1 Tb (128 GB) capacity with triple level cells and a bit density of over 20 GB/mm^2. The chip features a 16 KB page size, four planes and a 2400 MT/s interface. The increase in density will result in a lower per-Tb cost during the manufacturing process. It is hoped that the end consumer will ultimately benefit from the boost in performance and capacity.

Pure Storage, a maker of various storage solutions and custom enterprise-grade SSDs, claims the company will produce SSDs with up to 300 TBs of capacity by 2026. In an interview with Pure Storage CTO Alex McMullan, Blocks & Files got exclusive information that the company targets SSD capacities of up to 300 TBs in 2026. Pure Storage creates proprietary Direct Flash Modules (DFM) SSDs which use 3D NAND chips controlled by a custom SSD controller, are used in the FlashArray systems, and run on a custom FlashBlade operating system. This level of customization allows Pure Storage to create SSD drives with remarkable capacities in the future as the 3D NAND technology advances.

In the coming years, 3D NAND flash manufacturers will switch from the current 200-layer chips to the 400/500-layer chips, driving storage density to new highs. As manufacturers update their technology, so does Pure with its DFM cards that use regular U.2 NVMe connectors in a custom ruler-style format made explicitly for Pure FlashArray systems. Compared to upcoming HDDs that Toshiba and Seagate will use, Pure Storage DFM SSDs will have much higher capacities and read/write speeds, especially as higher-density 3D NAND arrives. You can see the comparison of Pure's estimates for the future 300 TB SSDs with future HDD technology.

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today announced the SM2268XT, its latest high-performance PCIe Gen 4 SSD controller solution optimized for higher speed NAND transfer rates. The SM2268XT's superior performance and robust reliability allows customers to accelerate development of next-generation SSDs using current and future TLC and QLC 3D NAND flash with comprehensive data integrity and correction without compromising throughput and latency.

The SM2268XT features a dual-core ARM R8 CPU with four lanes of 16 Gb/s PCIe data flow and supports four NAND channels with up to 3,200 MT/s per channel, enabling designers to take advantage of higher throughput next-generation high-speed TLC and QLC 3D NAND flash. Its multi-core design automatically balances the compute load to deliver industry-leading sequential read and write speeds of 7,400 MB/s & 6,500 MB/s, and random read & write speed of 1,200K IOPS. In addition, its advanced architecture enables lower power consumption and rigorous data protection, providing high performance and reliability in a cost-effective DRAM-less PCIe Gen 4 NVMe SSD solution.

Transcend introduced the MTE400S, a value-ended M.2 NVMe SSD meant for the prebuilt OEM/SI channel. Built in the 42 mm-long M.2-2242 form-factor, the drive features a PCI-Express 3.0 x4 host interface. It comes in capacities of 256 GB, 512 GB, and 1 TB; and features a DRAM-less design, possibly using a Phison-sourced controller. The company didn't specify the type of 3D NAND flash used. The top-spec 1 TB variant offers transfer-speeds of up to 2000 MB/s reads, with up to 1700 MB/s writes; while the 512 GB variant writes at up to 1000 MB/s, and the 256 GB variant up to 900 MB/s; with endurance ratings of 100 TBW, 200 TBW, and 400 TBW, respectively. The company didn't reveal pricing, but these should be among the cheapest drives in the market, as they're sold in tray volumes.

At the 2023 International CES, we caught a hold of Phison, makes or arguably the most popular SSD controllers, which sprung to prominence on being the first to market with PCIe Gen 4 NVMe controllers, and now hopes to repeat it with PCIe Gen 5. We'd been shown a reference-design Phison E26-powered M.2 SSD, along with some hardware specs of the controller itself. The drive itself isn't much to look at—a standard looking M.2-2280 drive with a PCI-Express 5.0 x4 host interface, and the Phison E26 controller with its shiny IHS being prominently located next to a DDR4 memory chip, and two new-generation Micron Technology 3D NAND flash memory chips.

The Phison E26 controller, bearing the long-form model number PS5026-E26, is an NVMe 2.0 spec client-segment SSD controller. It has been built on the TSMC 12 nm FinFET silicon-fabrication node. The controller features an integrated DRAM controller with support for DDR4 and LPDDR4 memory types for use as DRAM cache. Its main flash interface is 8-channel with 32 NAND chip-enable (CE) lines, support for TLC and QLC NAND flash, a dual-CPU architecture, and hardware-acceleration for AES-256, TCG-Opal, and Pyrite. The controller features Phison's 5th generation LPDC ECC and internal RAID engines. For its reference-design 2 TB TLC-based drive, Phison claims sequential transfer rates of up to 13.5 GB/s reads, with up to 12 GB/s writes. The 4K random-access performance is rated at up to 1.5 million IOPS reads, with up to 2 million IOPS writes.

Mushkin at the 2023 International CES showed off its Vortex Redline and Vortex LX M.2 NVMe SSDs. The Vortex Redline is the company's top PCIe Gen 4 drive, combining an Innogrit IG5236 NVMe 1.4 controller with 3D TLC NAND flash, to offer transfer speeds of up to 7415 MB/s. The Vortex Redline comes in capacities of 512 GB, 1 TB, and 2 TB. The Vortex LX is a more value-oriented product, based on an unnamed Innogrit-sourced DRAMless controller. This drive features a PCIe Gen 4 interface, but offers slightly lower performance that the company didn't disclose.

The star attraction at the Mushkin booth was its Epsilon SSD that features a PCI-Express 5.0 x4 + NVMe 2.0 interface, a Phison E26-series controller, and next generation 3D NAND flash memory (possibly 232-layer). The drive features active cooling from a fan-heatsink, and while the company didn't talk about performance, drives based on this controller are known to offer up to 12 GB/s of sequential transfers. Lastly, the company showed off its lineup of 2.5-inch SATA 6 Gbps SSDs in capacities ranging all the way up to 16 TB, which are meant to be HDD replacements, and "warm" storage devices.