Wednesday, June 21st 2023
Micron Announces UFS 4.0 Mobile Storage Built on 232-Layer 3D NAND
Micron Technology, Inc. announced today that it is now delivering qualification samples of its Universal Flash Storage (UFS) 4.0 mobile solution, built on its advanced 232-layer 3D NAND. Offered in high capacities up to 1 terabyte (TB), the UFS 4.0 storage solution is being shipped to select global smartphone manufacturers and chipset vendors. Micron's newest mobile flash storage outpaces competition on several critical NAND benchmarks, delivering the industry's fastest performance for flagship smartphones with fast bootup, app launches and video downloads.
"Micron's latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones."This product is Micron's first mobile solution built on the company's innovative 232-layer triple-level cell (TLC) NAND, which delivers 100% higher write bandwidth and 75% higher read bandwidth. Micron's 232-layer 3D NAND architecture provides more bits per square millimeter of silicon by stacking the NAND bit cell array into more layers, allowing greater density, performance improvements and capacity growth. This latest mobile solution also represents the world's first UFS 4.0 storage to use six-plane NAND architecture, which allows significantly higher random read throughput - leading to more responsiveness, faster application loading times and a better overall user experience.
The UFS 4.0 solution:
Micron is now shipping samples of its UFS 4.0 storage solution to key mobile manufacturers and chipset vendors worldwide in capacities of 256 gigabytes (GB), 512 GB and 1 TB. The company will begin high-volume production of its UFS 4.0 storage solution in the second half of 2023 - equipping the mobile ecosystem with the high-performance mobile flash storage needed to innovate the next wave of 5G and AI-enabled flagship smartphone experiences.
Source:
Micron
"Micron's latest mobile solution tightly weaves together our best-in-class UFS 4.0 technology, proprietary low-power controller, 232-layer NAND and highly configurable firmware architecture to deliver unmatched performance," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Together, these technologies position Micron at the forefront of delivering the performance and low-power innovations our customers need to enable an exceptional end-user experience for flagship smartphones."This product is Micron's first mobile solution built on the company's innovative 232-layer triple-level cell (TLC) NAND, which delivers 100% higher write bandwidth and 75% higher read bandwidth. Micron's 232-layer 3D NAND architecture provides more bits per square millimeter of silicon by stacking the NAND bit cell array into more layers, allowing greater density, performance improvements and capacity growth. This latest mobile solution also represents the world's first UFS 4.0 storage to use six-plane NAND architecture, which allows significantly higher random read throughput - leading to more responsiveness, faster application loading times and a better overall user experience.
The UFS 4.0 solution:
- Offers up to 4300 megabytes per second (MBps) sequential read and 4000 MBps sequential write speed, twice the performance of previous generations so users can launch their favorite social media apps faster
- Is 25% more power-efficient so users can enjoy data-intensive apps longer without the hassle of frequent charging
- Provides 10% write latency improvement over competition, resulting in super responsive app performance
- Allows users to quickly download two hours of 4K streaming content in less than 15 seconds, twice as fast as the prior generation
Micron is now shipping samples of its UFS 4.0 storage solution to key mobile manufacturers and chipset vendors worldwide in capacities of 256 gigabytes (GB), 512 GB and 1 TB. The company will begin high-volume production of its UFS 4.0 storage solution in the second half of 2023 - equipping the mobile ecosystem with the high-performance mobile flash storage needed to innovate the next wave of 5G and AI-enabled flagship smartphone experiences.
6 Comments on Micron Announces UFS 4.0 Mobile Storage Built on 232-Layer 3D NAND
A) Only be available on the top flagship phones, at least at first anyways.. AND
B) Add several hundreds of $$ to said flagship phone's already obscene prices.... Well, this sounds great on paper, but is of course contingent upon having:
A) The latest & greatest flagship phone, containing said superfast storage, AND
B) A speedy AND consistent 5G signal, which is possible in some areas, some of the time, on some networks, but not so much in others :(
Now all manufacturers need to do is decide on a good interface to bring those recordings on to machines that can work with them.
Instead of usb 2